TW200637004A - Thin film transistor - Google Patents
Thin film transistorInfo
- Publication number
- TW200637004A TW200637004A TW094110918A TW94110918A TW200637004A TW 200637004 A TW200637004 A TW 200637004A TW 094110918 A TW094110918 A TW 094110918A TW 94110918 A TW94110918 A TW 94110918A TW 200637004 A TW200637004 A TW 200637004A
- Authority
- TW
- Taiwan
- Prior art keywords
- thin film
- film transistor
- substrate
- gate
- layer formed
- Prior art date
Links
- 239000010409 thin film Substances 0.000 title abstract 2
- 239000002184 metal Substances 0.000 abstract 4
- 239000000758 substrate Substances 0.000 abstract 3
- 239000012212 insulator Substances 0.000 abstract 2
- 239000004065 semiconductor Substances 0.000 abstract 2
- 239000011521 glass Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/4908—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET for thin film semiconductor, e.g. gate of TFT
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electrodes Of Semiconductors (AREA)
- Thin Film Transistor (AREA)
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW094110918A TWI271865B (en) | 2005-04-06 | 2005-04-06 | Thin film transistor |
US11/218,631 US7598524B2 (en) | 2005-04-06 | 2005-09-06 | Thin film transistor with electrode adhesion layers |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW094110918A TWI271865B (en) | 2005-04-06 | 2005-04-06 | Thin film transistor |
Publications (2)
Publication Number | Publication Date |
---|---|
TW200637004A true TW200637004A (en) | 2006-10-16 |
TWI271865B TWI271865B (en) | 2007-01-21 |
Family
ID=37082394
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW094110918A TWI271865B (en) | 2005-04-06 | 2005-04-06 | Thin film transistor |
Country Status (2)
Country | Link |
---|---|
US (1) | US7598524B2 (zh) |
TW (1) | TWI271865B (zh) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN110993564A (zh) * | 2019-12-23 | 2020-04-10 | 深圳市华星光电半导体显示技术有限公司 | 阵列基板的制作方法、阵列基板及显示装置 |
US11362117B2 (en) | 2019-12-23 | 2022-06-14 | Shenzhen China Star Optoelectronics Semiconductor Display Technology Co., Ltd. | Manufacturing method of array substrate, array substrate, and display device |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001194676A (ja) * | 2000-01-07 | 2001-07-19 | Hitachi Ltd | 液晶表示装置 |
JP2001281698A (ja) | 2000-03-30 | 2001-10-10 | Advanced Display Inc | 電気光学素子の製法 |
KR100343205B1 (ko) * | 2000-04-26 | 2002-07-10 | 김순택 | 카본나노튜브를 이용한 삼극 전계 방출 어레이 및 그 제작방법 |
KR100382955B1 (ko) * | 2000-10-10 | 2003-05-09 | 엘지.필립스 엘시디 주식회사 | 액정표시장치용 어레이기판과 그 제조방법 |
US7095460B2 (en) * | 2001-02-26 | 2006-08-22 | Samsung Electronics Co., Ltd. | Thin film transistor array substrate using low dielectric insulating layer and method of fabricating the same |
KR100750922B1 (ko) * | 2001-04-13 | 2007-08-22 | 삼성전자주식회사 | 배선 및 그 제조 방법과 그 배선을 포함하는 박막트랜지스터 기판 및 그 제조 방법 |
KR100980008B1 (ko) | 2002-01-02 | 2010-09-03 | 삼성전자주식회사 | 배선 구조, 이를 이용하는 박막 트랜지스터 기판 및 그제조 방법 |
KR100968560B1 (ko) | 2003-01-07 | 2010-07-08 | 삼성전자주식회사 | 박막 트랜지스터 기판 및 박막 트랜지스터 기판의금속배선 형성방법 |
JP4278034B2 (ja) * | 2003-03-10 | 2009-06-10 | シャープ株式会社 | 表示装置用基板及びその製造方法及びそれを備えた表示装置 |
CN100381925C (zh) | 2005-03-11 | 2008-04-16 | 友达光电股份有限公司 | 一种液晶显示装置及其下基板的制造方法 |
TWI271866B (en) * | 2005-05-18 | 2007-01-21 | Au Optronics Corp | Thin film transistor and process thereof |
-
2005
- 2005-04-06 TW TW094110918A patent/TWI271865B/zh active
- 2005-09-06 US US11/218,631 patent/US7598524B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
TWI271865B (en) | 2007-01-21 |
US20060226484A1 (en) | 2006-10-12 |
US7598524B2 (en) | 2009-10-06 |
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