TW200636993A - A field effect transistor with novel field-plate structure - Google Patents

A field effect transistor with novel field-plate structure

Info

Publication number
TW200636993A
TW200636993A TW094110832A TW94110832A TW200636993A TW 200636993 A TW200636993 A TW 200636993A TW 094110832 A TW094110832 A TW 094110832A TW 94110832 A TW94110832 A TW 94110832A TW 200636993 A TW200636993 A TW 200636993A
Authority
TW
Taiwan
Prior art keywords
field
effect transistor
plate structure
novel
field effect
Prior art date
Application number
TW094110832A
Other languages
Chinese (zh)
Other versions
TWI257173B (en
Inventor
Der-Wei Tu
Original Assignee
Win Semiconductors Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Win Semiconductors Corp filed Critical Win Semiconductors Corp
Priority to TW94110832A priority Critical patent/TWI257173B/en
Application granted granted Critical
Publication of TWI257173B publication Critical patent/TWI257173B/en
Publication of TW200636993A publication Critical patent/TW200636993A/en

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Landscapes

  • Junction Field-Effect Transistors (AREA)

Abstract

A field effect transistor (FET) with novel field-plate structure relates to a Schottky gate FET structure with field plate thereon for increasing the operation voltage. The structure can eliminate surface damages of unpassivated region and degradation of the interface property of gate contacts during plasma etching of dielectric film for gate recesses, and can be reliably used in wireless and satellite communications.
TW94110832A 2005-04-06 2005-04-06 A field effect transistor with novel field-plate structure TWI257173B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW94110832A TWI257173B (en) 2005-04-06 2005-04-06 A field effect transistor with novel field-plate structure

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW94110832A TWI257173B (en) 2005-04-06 2005-04-06 A field effect transistor with novel field-plate structure

Publications (2)

Publication Number Publication Date
TWI257173B TWI257173B (en) 2006-06-21
TW200636993A true TW200636993A (en) 2006-10-16

Family

ID=37704222

Family Applications (1)

Application Number Title Priority Date Filing Date
TW94110832A TWI257173B (en) 2005-04-06 2005-04-06 A field effect transistor with novel field-plate structure

Country Status (1)

Country Link
TW (1) TWI257173B (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI488297B (en) * 2012-06-01 2015-06-11 Taiwan Semiconductor Mfg Co Ltd Device and method for manufacturing the same
US9673297B2 (en) 2012-06-01 2017-06-06 Taiwan Semiconductor Manufacturing Company, Ltd. Vertical power MOSFET and methods of forming the same
CN111799172A (en) * 2019-04-08 2020-10-20 上海先进半导体制造股份有限公司 LDMOS (laterally diffused metal oxide semiconductor) manufactured by using Schottky diode as field plate and manufacturing method thereof

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI488297B (en) * 2012-06-01 2015-06-11 Taiwan Semiconductor Mfg Co Ltd Device and method for manufacturing the same
US9087920B2 (en) 2012-06-01 2015-07-21 Taiwan Semiconductor Manufacturing Company, Ltd. Vertical power MOSFET and methods of forming the same
US9673297B2 (en) 2012-06-01 2017-06-06 Taiwan Semiconductor Manufacturing Company, Ltd. Vertical power MOSFET and methods of forming the same
US9892974B2 (en) 2012-06-01 2018-02-13 Taiwan Semiconductor Manufacturing Company, Ltd. Vertical power MOSFET and methods of forming the same
US10141421B2 (en) 2012-06-01 2018-11-27 Taiwan Semiconductor Manufacturing Company, Ltd. Vertical power MOSFET and methods of forming the same
CN111799172A (en) * 2019-04-08 2020-10-20 上海先进半导体制造股份有限公司 LDMOS (laterally diffused metal oxide semiconductor) manufactured by using Schottky diode as field plate and manufacturing method thereof

Also Published As

Publication number Publication date
TWI257173B (en) 2006-06-21

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Legal Events

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MM4A Annulment or lapse of patent due to non-payment of fees