TW200636993A - A field effect transistor with novel field-plate structure - Google Patents
A field effect transistor with novel field-plate structureInfo
- Publication number
- TW200636993A TW200636993A TW094110832A TW94110832A TW200636993A TW 200636993 A TW200636993 A TW 200636993A TW 094110832 A TW094110832 A TW 094110832A TW 94110832 A TW94110832 A TW 94110832A TW 200636993 A TW200636993 A TW 200636993A
- Authority
- TW
- Taiwan
- Prior art keywords
- field
- effect transistor
- plate structure
- novel
- field effect
- Prior art date
Links
Landscapes
- Junction Field-Effect Transistors (AREA)
Abstract
A field effect transistor (FET) with novel field-plate structure relates to a Schottky gate FET structure with field plate thereon for increasing the operation voltage. The structure can eliminate surface damages of unpassivated region and degradation of the interface property of gate contacts during plasma etching of dielectric film for gate recesses, and can be reliably used in wireless and satellite communications.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW94110832A TWI257173B (en) | 2005-04-06 | 2005-04-06 | A field effect transistor with novel field-plate structure |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW94110832A TWI257173B (en) | 2005-04-06 | 2005-04-06 | A field effect transistor with novel field-plate structure |
Publications (2)
Publication Number | Publication Date |
---|---|
TWI257173B TWI257173B (en) | 2006-06-21 |
TW200636993A true TW200636993A (en) | 2006-10-16 |
Family
ID=37704222
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW94110832A TWI257173B (en) | 2005-04-06 | 2005-04-06 | A field effect transistor with novel field-plate structure |
Country Status (1)
Country | Link |
---|---|
TW (1) | TWI257173B (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI488297B (en) * | 2012-06-01 | 2015-06-11 | Taiwan Semiconductor Mfg Co Ltd | Device and method for manufacturing the same |
US9673297B2 (en) | 2012-06-01 | 2017-06-06 | Taiwan Semiconductor Manufacturing Company, Ltd. | Vertical power MOSFET and methods of forming the same |
CN111799172A (en) * | 2019-04-08 | 2020-10-20 | 上海先进半导体制造股份有限公司 | LDMOS (laterally diffused metal oxide semiconductor) manufactured by using Schottky diode as field plate and manufacturing method thereof |
-
2005
- 2005-04-06 TW TW94110832A patent/TWI257173B/en not_active IP Right Cessation
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI488297B (en) * | 2012-06-01 | 2015-06-11 | Taiwan Semiconductor Mfg Co Ltd | Device and method for manufacturing the same |
US9087920B2 (en) | 2012-06-01 | 2015-07-21 | Taiwan Semiconductor Manufacturing Company, Ltd. | Vertical power MOSFET and methods of forming the same |
US9673297B2 (en) | 2012-06-01 | 2017-06-06 | Taiwan Semiconductor Manufacturing Company, Ltd. | Vertical power MOSFET and methods of forming the same |
US9892974B2 (en) | 2012-06-01 | 2018-02-13 | Taiwan Semiconductor Manufacturing Company, Ltd. | Vertical power MOSFET and methods of forming the same |
US10141421B2 (en) | 2012-06-01 | 2018-11-27 | Taiwan Semiconductor Manufacturing Company, Ltd. | Vertical power MOSFET and methods of forming the same |
CN111799172A (en) * | 2019-04-08 | 2020-10-20 | 上海先进半导体制造股份有限公司 | LDMOS (laterally diffused metal oxide semiconductor) manufactured by using Schottky diode as field plate and manufacturing method thereof |
Also Published As
Publication number | Publication date |
---|---|
TWI257173B (en) | 2006-06-21 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
MM4A | Annulment or lapse of patent due to non-payment of fees |