TW200636934A - Compound semiconductor device having copper metallization - Google Patents
Compound semiconductor device having copper metallizationInfo
- Publication number
- TW200636934A TW200636934A TW094111148A TW94111148A TW200636934A TW 200636934 A TW200636934 A TW 200636934A TW 094111148 A TW094111148 A TW 094111148A TW 94111148 A TW94111148 A TW 94111148A TW 200636934 A TW200636934 A TW 200636934A
- Authority
- TW
- Taiwan
- Prior art keywords
- substrate
- semiconductor device
- compound semiconductor
- copper metallization
- copper
- Prior art date
Links
Landscapes
- Electrodes Of Semiconductors (AREA)
- Bipolar Transistors (AREA)
- Junction Field-Effect Transistors (AREA)
Abstract
This invention relates to a compound semiconductor device with copper metallization. Its structure is a heterojunction bipolar transistor (HBT) structure. When a substrate is a gallium arsenide (GaAs) substrate, the material of the ohmic contact layer is Pd/Ge/WNx/Cu or Pt/Ti/Pt/Cu, and the metal interconnection is Ti/Pt/Cu. If a substrate is an indium phosphide (InP) substrate, the material of the ohmic contact layer is Ti/Pt/Cu or Pt/Ti/Pt/Cu, and the metal interconnection is Ti/Pt/Cu. By means of replacing gold with copper, it possesses a better heat dissipation property. Eventually, it promotes the cooling effect and the device reliability.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW94111148A TWI254419B (en) | 2005-04-08 | 2005-04-08 | Compound semiconductor device having copper metallization |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW94111148A TWI254419B (en) | 2005-04-08 | 2005-04-08 | Compound semiconductor device having copper metallization |
Publications (2)
Publication Number | Publication Date |
---|---|
TWI254419B TWI254419B (en) | 2006-05-01 |
TW200636934A true TW200636934A (en) | 2006-10-16 |
Family
ID=37587308
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW94111148A TWI254419B (en) | 2005-04-08 | 2005-04-08 | Compound semiconductor device having copper metallization |
Country Status (1)
Country | Link |
---|---|
TW (1) | TWI254419B (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8993121B2 (en) | 2010-02-19 | 2015-03-31 | Sumitomo Electric Industries, Ltd. | Metal laminated structure and method for producing the same |
US9199433B2 (en) | 2009-06-30 | 2015-12-01 | Sumitomo Electric Industries, Ltd. | Metal laminated structure and method for producing the metal laminated structure |
-
2005
- 2005-04-08 TW TW94111148A patent/TWI254419B/en active
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9199433B2 (en) | 2009-06-30 | 2015-12-01 | Sumitomo Electric Industries, Ltd. | Metal laminated structure and method for producing the metal laminated structure |
US8993121B2 (en) | 2010-02-19 | 2015-03-31 | Sumitomo Electric Industries, Ltd. | Metal laminated structure and method for producing the same |
TWI496681B (en) * | 2010-02-19 | 2015-08-21 | Sumitomo Electric Industries | Metal laminated structure and a method of manufacturing the same |
Also Published As
Publication number | Publication date |
---|---|
TWI254419B (en) | 2006-05-01 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5668133B2 (en) | Multi-layer diffusion barrier for wide band gap Schottky barrier devices | |
TWI618149B (en) | Copper interconnects having a titanium-titanium nitride assembly between copper and compound semiconductor | |
US20050151255A1 (en) | Semiconductor device having schottky junction electrode | |
EP2428995A3 (en) | Gallium Nitride Based Semiconductor Devices and Methods of Manufacturing the Same | |
TW200636999A (en) | Thick semi-insulating or insulating epitaxial gallium nitride layers and devices incorporating same | |
JP2003534668A (en) | Luminescent diode chip having a GaN-based epitaxy continuous layer emitting radiation and method of manufacturing the same | |
EP1973163A3 (en) | High temperature performance capable gallium nitride transistor | |
US9368610B2 (en) | High electron mobility transistor with indium nitride layer | |
TWI291232B (en) | Copper metalized ohmic contact electrode of compound semiconductor device | |
JP2007059508A (en) | Electrode of n-type nitride semiconductor and method of manufacturing same | |
TW200723564A (en) | Semiconductor element and manufacturing method of the same | |
US11289624B2 (en) | Control of p-contact resistance in a semiconductor light emitting device | |
US9099452B2 (en) | Semiconductor package with low profile switch node integrated heat spreader | |
TW200636934A (en) | Compound semiconductor device having copper metallization | |
US9698116B2 (en) | Thick-silver layer interface for a semiconductor die and corresponding thermal layer | |
US8344359B2 (en) | Transistor having thermo electron cooling | |
US8946032B2 (en) | Method of manufacturing power device | |
US10600718B1 (en) | Heat sink package | |
US6787910B2 (en) | Schottky structure in GaAs semiconductor device | |
JP6863574B2 (en) | Manufacturing method of semiconductor devices | |
Yazdani et al. | Au‐Free Ohmic Contact for GaN High‐Electron‐Mobility Transistors | |
CN103258809A (en) | Copper metal connection line of three-five compound semiconductor assembly | |
US20230253359A1 (en) | Semiconductor die including a metal stack | |
CN117981074A (en) | Semiconductor package device and method of manufacturing the same | |
CN116615304A (en) | Transistor package with improved die attach |