TW200636934A - Compound semiconductor device having copper metallization - Google Patents

Compound semiconductor device having copper metallization

Info

Publication number
TW200636934A
TW200636934A TW094111148A TW94111148A TW200636934A TW 200636934 A TW200636934 A TW 200636934A TW 094111148 A TW094111148 A TW 094111148A TW 94111148 A TW94111148 A TW 94111148A TW 200636934 A TW200636934 A TW 200636934A
Authority
TW
Taiwan
Prior art keywords
substrate
semiconductor device
compound semiconductor
copper metallization
copper
Prior art date
Application number
TW094111148A
Other languages
Chinese (zh)
Other versions
TWI254419B (en
Inventor
Yi Jang
Shang-Wen Jang
Cheng-Shr Li
Original Assignee
Univ Nat Chiao Tung
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Univ Nat Chiao Tung filed Critical Univ Nat Chiao Tung
Priority to TW94111148A priority Critical patent/TWI254419B/en
Application granted granted Critical
Publication of TWI254419B publication Critical patent/TWI254419B/en
Publication of TW200636934A publication Critical patent/TW200636934A/en

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  • Electrodes Of Semiconductors (AREA)
  • Bipolar Transistors (AREA)
  • Junction Field-Effect Transistors (AREA)

Abstract

This invention relates to a compound semiconductor device with copper metallization. Its structure is a heterojunction bipolar transistor (HBT) structure. When a substrate is a gallium arsenide (GaAs) substrate, the material of the ohmic contact layer is Pd/Ge/WNx/Cu or Pt/Ti/Pt/Cu, and the metal interconnection is Ti/Pt/Cu. If a substrate is an indium phosphide (InP) substrate, the material of the ohmic contact layer is Ti/Pt/Cu or Pt/Ti/Pt/Cu, and the metal interconnection is Ti/Pt/Cu. By means of replacing gold with copper, it possesses a better heat dissipation property. Eventually, it promotes the cooling effect and the device reliability.
TW94111148A 2005-04-08 2005-04-08 Compound semiconductor device having copper metallization TWI254419B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW94111148A TWI254419B (en) 2005-04-08 2005-04-08 Compound semiconductor device having copper metallization

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW94111148A TWI254419B (en) 2005-04-08 2005-04-08 Compound semiconductor device having copper metallization

Publications (2)

Publication Number Publication Date
TWI254419B TWI254419B (en) 2006-05-01
TW200636934A true TW200636934A (en) 2006-10-16

Family

ID=37587308

Family Applications (1)

Application Number Title Priority Date Filing Date
TW94111148A TWI254419B (en) 2005-04-08 2005-04-08 Compound semiconductor device having copper metallization

Country Status (1)

Country Link
TW (1) TWI254419B (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8993121B2 (en) 2010-02-19 2015-03-31 Sumitomo Electric Industries, Ltd. Metal laminated structure and method for producing the same
US9199433B2 (en) 2009-06-30 2015-12-01 Sumitomo Electric Industries, Ltd. Metal laminated structure and method for producing the metal laminated structure

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9199433B2 (en) 2009-06-30 2015-12-01 Sumitomo Electric Industries, Ltd. Metal laminated structure and method for producing the metal laminated structure
US8993121B2 (en) 2010-02-19 2015-03-31 Sumitomo Electric Industries, Ltd. Metal laminated structure and method for producing the same
TWI496681B (en) * 2010-02-19 2015-08-21 Sumitomo Electric Industries Metal laminated structure and a method of manufacturing the same

Also Published As

Publication number Publication date
TWI254419B (en) 2006-05-01

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