TW200636803A - Method and process for improved uniformity of electrochemical plating films produced in semiconductor device processing - Google Patents

Method and process for improved uniformity of electrochemical plating films produced in semiconductor device processing

Info

Publication number
TW200636803A
TW200636803A TW094137450A TW94137450A TW200636803A TW 200636803 A TW200636803 A TW 200636803A TW 094137450 A TW094137450 A TW 094137450A TW 94137450 A TW94137450 A TW 94137450A TW 200636803 A TW200636803 A TW 200636803A
Authority
TW
Taiwan
Prior art keywords
copper
ecp
semiconductor device
device processing
films produced
Prior art date
Application number
TW094137450A
Other languages
Chinese (zh)
Other versions
TWI304225B (en
Inventor
Yen Chuang
Huang-Yi Huang
Original Assignee
Taiwan Semiconductor Mfg Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Taiwan Semiconductor Mfg Co Ltd filed Critical Taiwan Semiconductor Mfg Co Ltd
Publication of TW200636803A publication Critical patent/TW200636803A/en
Application granted granted Critical
Publication of TWI304225B publication Critical patent/TWI304225B/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D3/00—Electroplating: Baths therefor
    • C25D3/02—Electroplating: Baths therefor from solutions
    • C25D3/38—Electroplating: Baths therefor from solutions of copper
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/02—Electroplating of selected surface areas
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/10—Electroplating with more than one layer of the same or of different metals

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Electroplating Methods And Accessories (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

A method and device for ECP copper deposition into openings and over a surface of a semiconductor substrate provides a final deposited film with a uniform height across the substrate. The substrate is submerged in an ECP electrolyte solution with accelerants formed on a dielectric surface and in and over damascene openings formed in the dielectric surface, and copper is deposited onto the surface and into the damascene openings. A deplating process that used a reverse polarity of power conditions used in the ECP process is then used for a brief time to remove some of the deposited copper and an excess portion of the accelerant. The copper is preferentially removed from portion where the initial deposition produced localized thick portions and the deplating process is followed by a further ECP process that yields a copper film with a uniform top surface.
TW094137450A 2005-04-11 2005-10-26 Method and process for improved uniformity of electrochemical plating films produced in semiconductor device processing TWI304225B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US11/103,917 US20060226014A1 (en) 2005-04-11 2005-04-11 Method and process for improved uniformity of electrochemical plating films produced in semiconductor device processing

Publications (2)

Publication Number Publication Date
TW200636803A true TW200636803A (en) 2006-10-16
TWI304225B TWI304225B (en) 2008-12-11

Family

ID=37077197

Family Applications (1)

Application Number Title Priority Date Filing Date
TW094137450A TWI304225B (en) 2005-04-11 2005-10-26 Method and process for improved uniformity of electrochemical plating films produced in semiconductor device processing

Country Status (3)

Country Link
US (1) US20060226014A1 (en)
CN (1) CN100577890C (en)
TW (1) TWI304225B (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9758893B2 (en) * 2014-02-07 2017-09-12 Applied Materials, Inc. Electroplating methods for semiconductor substrates
US10154598B2 (en) 2014-10-13 2018-12-11 Rohm And Haas Electronic Materials Llc Filling through-holes
CN108103566B (en) * 2017-12-28 2021-02-02 上海冠众光学科技有限公司 Metal film deplating method and system
TWI688746B (en) * 2018-12-17 2020-03-21 揚博科技股份有限公司 Substrate thickness detection and automatic correction system and substrate thickness detection and automatic correction method

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3191759B2 (en) * 1998-02-20 2001-07-23 日本電気株式会社 Method for manufacturing semiconductor device
US6524461B2 (en) * 1998-10-14 2003-02-25 Faraday Technology Marketing Group, Llc Electrodeposition of metals in small recesses using modulated electric fields
US6432821B1 (en) * 2000-12-18 2002-08-13 Intel Corporation Method of copper electroplating
US6881318B2 (en) * 2001-07-26 2005-04-19 Applied Materials, Inc. Dynamic pulse plating for high aspect ratio features
CN1283848C (en) * 2001-10-16 2006-11-08 新光电气工业株式会社 Method of copper-plating small-diameter holes
DE60336539D1 (en) * 2002-12-20 2011-05-12 Shipley Co Llc Method for electroplating with reversed pulse current
JP3949652B2 (en) * 2003-02-17 2007-07-25 Ｎｅｃエレクトロニクス株式会社 Manufacturing method of semiconductor device

Also Published As

Publication number Publication date
US20060226014A1 (en) 2006-10-12
CN100577890C (en) 2010-01-06
CN1847464A (en) 2006-10-18
TWI304225B (en) 2008-12-11

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