TW200635218A - Electronic switch and the operating method of transistor - Google Patents
Electronic switch and the operating method of transistorInfo
- Publication number
- TW200635218A TW200635218A TW094109941A TW94109941A TW200635218A TW 200635218 A TW200635218 A TW 200635218A TW 094109941 A TW094109941 A TW 094109941A TW 94109941 A TW94109941 A TW 94109941A TW 200635218 A TW200635218 A TW 200635218A
- Authority
- TW
- Taiwan
- Prior art keywords
- transistor
- terminal
- switch
- electronic switch
- operating method
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/10—Modifications for increasing the maximum permissible switched voltage
- H03K17/102—Modifications for increasing the maximum permissible switched voltage in field-effect transistor switches
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/06—Modifications for ensuring a fully conducting state
- H03K17/063—Modifications for ensuring a fully conducting state in field-effect transistor switches
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K2217/00—Indexing scheme related to electronic switching or gating, i.e. not by contact-making or -breaking covered by H03K17/00
- H03K2217/0018—Special modifications or use of the back gate voltage of a FET
Landscapes
- Electronic Switches (AREA)
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW094109941A TWI263404B (en) | 2005-03-30 | 2005-03-30 | Electronic switch and the operating method of transistor |
US11/160,740 US20060220727A1 (en) | 2005-03-30 | 2005-07-07 | Electronic switch and operational method for transistor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW094109941A TWI263404B (en) | 2005-03-30 | 2005-03-30 | Electronic switch and the operating method of transistor |
Publications (2)
Publication Number | Publication Date |
---|---|
TW200635218A true TW200635218A (en) | 2006-10-01 |
TWI263404B TWI263404B (en) | 2006-10-01 |
Family
ID=37069643
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW094109941A TWI263404B (en) | 2005-03-30 | 2005-03-30 | Electronic switch and the operating method of transistor |
Country Status (2)
Country | Link |
---|---|
US (1) | US20060220727A1 (zh) |
TW (1) | TWI263404B (zh) |
Families Citing this family (26)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9899133B2 (en) | 2013-08-01 | 2018-02-20 | Qorvo Us, Inc. | Advanced 3D inductor structures with confined magnetic field |
US9048836B2 (en) * | 2013-08-01 | 2015-06-02 | RF Mirco Devices, Inc. | Body bias switching for an RF switch |
US9871499B2 (en) | 2013-03-15 | 2018-01-16 | Qorvo Us, Inc. | Multi-band impedance tuners using weakly-coupled LC resonators |
US9742359B2 (en) | 2013-03-15 | 2017-08-22 | Qorvo International Pte. Ltd. | Power amplifier with wide dynamic range am feedback linearization scheme |
US9628045B2 (en) | 2013-08-01 | 2017-04-18 | Qorvo Us, Inc. | Cooperative tunable RF filters |
US9444417B2 (en) | 2013-03-15 | 2016-09-13 | Qorvo Us, Inc. | Weakly coupled RF network based power amplifier architecture |
US9780756B2 (en) | 2013-08-01 | 2017-10-03 | Qorvo Us, Inc. | Calibration for a tunable RF filter structure |
US9685928B2 (en) | 2013-08-01 | 2017-06-20 | Qorvo Us, Inc. | Interference rejection RF filters |
US9755671B2 (en) | 2013-08-01 | 2017-09-05 | Qorvo Us, Inc. | VSWR detector for a tunable filter structure |
US9705478B2 (en) | 2013-08-01 | 2017-07-11 | Qorvo Us, Inc. | Weakly coupled tunable RF receiver architecture |
US9774311B2 (en) | 2013-03-15 | 2017-09-26 | Qorvo Us, Inc. | Filtering characteristic adjustments of weakly coupled tunable RF filters |
US9484879B2 (en) | 2013-06-06 | 2016-11-01 | Qorvo Us, Inc. | Nonlinear capacitance linearization |
US9825656B2 (en) | 2013-08-01 | 2017-11-21 | Qorvo Us, Inc. | Weakly coupled tunable RF transmitter architecture |
US9859863B2 (en) | 2013-03-15 | 2018-01-02 | Qorvo Us, Inc. | RF filter structure for antenna diversity and beam forming |
US9705542B2 (en) | 2013-06-06 | 2017-07-11 | Qorvo Us, Inc. | Reconfigurable RF filter |
US9800282B2 (en) | 2013-06-06 | 2017-10-24 | Qorvo Us, Inc. | Passive voltage-gain network |
US9966981B2 (en) | 2013-06-06 | 2018-05-08 | Qorvo Us, Inc. | Passive acoustic resonator based RF receiver |
US9780817B2 (en) | 2013-06-06 | 2017-10-03 | Qorvo Us, Inc. | RX shunt switching element-based RF front-end circuit |
US10796835B2 (en) | 2015-08-24 | 2020-10-06 | Qorvo Us, Inc. | Stacked laminate inductors for high module volume utilization and performance-cost-size-processing-time tradeoff |
US11139238B2 (en) | 2016-12-07 | 2021-10-05 | Qorvo Us, Inc. | High Q factor inductor structure |
US10181478B2 (en) | 2017-01-06 | 2019-01-15 | Qorvo Us, Inc. | Radio frequency switch having field effect transistor cells |
US10115818B1 (en) | 2017-08-23 | 2018-10-30 | Semiconductor Components Industries, Llc | Reducing MOSFET body current |
US10277222B1 (en) | 2018-02-28 | 2019-04-30 | Qorvo Us, Inc. | Radio frequency switch |
US10263616B1 (en) | 2018-03-29 | 2019-04-16 | Qorvo Us, Inc. | Radio frequency switch |
US10659031B2 (en) | 2018-07-30 | 2020-05-19 | Qorvo Us, Inc. | Radio frequency switch |
TW202025635A (zh) * | 2018-12-26 | 2020-07-01 | 新唐科技股份有限公司 | 電晶體開關電路 |
Family Cites Families (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR940006998B1 (ko) * | 1991-05-28 | 1994-08-03 | 삼성전자 주식회사 | 높은 출력 이득을 얻는 데이타 출력 드라이버 |
US5689209A (en) * | 1994-12-30 | 1997-11-18 | Siliconix Incorporated | Low-side bidirectional battery disconnect switch |
US5767733A (en) * | 1996-09-20 | 1998-06-16 | Integrated Device Technology, Inc. | Biasing circuit for reducing body effect in a bi-directional field effect transistor |
US5786724A (en) * | 1996-12-17 | 1998-07-28 | Texas Instruments Incorporated | Control of body effect in MOS transistors by switching source-to-body bias |
US6130574A (en) * | 1997-01-24 | 2000-10-10 | Siemens Aktiengesellschaft | Circuit configuration for producing negative voltages, charge pump having at least two circuit configurations and method of operating a charge pump |
JP3258930B2 (ja) * | 1997-04-24 | 2002-02-18 | 東芝マイクロエレクトロニクス株式会社 | トランスミッション・ゲート |
US6429684B1 (en) * | 1997-10-06 | 2002-08-06 | Texas Instruments Incorporated | Circuit having dynamic threshold voltage |
US6111455A (en) * | 1998-12-30 | 2000-08-29 | International Business Machines Corporation | Method for controlling delays in silicon on insulator circuits |
IT1314178B1 (it) * | 1999-09-17 | 2002-12-04 | St Microelectronics Srl | Circuito di polarizzazione del terminale di bulk di un transistoremos. |
DE19953882C2 (de) * | 1999-11-09 | 2001-10-18 | Infineon Technologies Ag | Ladungspumpe zum Erzeugen von hohen Spannungen für Halbleiterschaltungen |
US6515534B2 (en) * | 1999-12-30 | 2003-02-04 | Intel Corporation | Enhanced conductivity body biased PMOS driver |
US6525594B2 (en) * | 2000-08-21 | 2003-02-25 | Texas Instruments Incorporated | Eliminating power-down popping in audio power amplifiers |
US6424203B1 (en) * | 2001-02-02 | 2002-07-23 | Semiconductor Components Industries Llc | Power supply circuit and method |
US6765430B2 (en) * | 2002-07-22 | 2004-07-20 | Yoshiyuki Ando | Complementary source follower circuit controlled by back bias voltage |
KR100462863B1 (ko) * | 2002-08-08 | 2004-12-17 | 삼성전자주식회사 | 고전압 발생회로 및 방법 |
US6965263B2 (en) * | 2002-10-10 | 2005-11-15 | Micron Technology, Inc. | Bulk node biasing method and apparatus |
US6878981B2 (en) * | 2003-03-20 | 2005-04-12 | Tower Semiconductor Ltd. | Triple-well charge pump stage with no threshold voltage back-bias effect |
US7084697B2 (en) * | 2003-07-23 | 2006-08-01 | Nec Electronics Corporation | Charge pump circuit capable of completely cutting off parasitic transistors |
ITMI20040309A1 (it) * | 2004-02-24 | 2004-05-24 | St Microelectronics Srl | Pompa di carica con migliorata polarizzazione delle regioni di body dei pass-transistor |
-
2005
- 2005-03-30 TW TW094109941A patent/TWI263404B/zh not_active IP Right Cessation
- 2005-07-07 US US11/160,740 patent/US20060220727A1/en not_active Abandoned
Also Published As
Publication number | Publication date |
---|---|
US20060220727A1 (en) | 2006-10-05 |
TWI263404B (en) | 2006-10-01 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
MM4A | Annulment or lapse of patent due to non-payment of fees |