TW200634907A - Reversal micro/nano imprinting process without residual layer of resist - Google Patents

Reversal micro/nano imprinting process without residual layer of resist

Info

Publication number
TW200634907A
TW200634907A TW094110325A TW94110325A TW200634907A TW 200634907 A TW200634907 A TW 200634907A TW 094110325 A TW094110325 A TW 094110325A TW 94110325 A TW94110325 A TW 94110325A TW 200634907 A TW200634907 A TW 200634907A
Authority
TW
Taiwan
Prior art keywords
resist
micro
mold
layer
reversal
Prior art date
Application number
TW094110325A
Other languages
Chinese (zh)
Other versions
TWI252520B (en
Inventor
Chiao-Yang Cheng
Tse-Min Chu
Yoou-Bin Guo
Chau-Nan Hong
Min-Hsiung Hon
Original Assignee
Univ Nat Cheng Kung
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Univ Nat Cheng Kung filed Critical Univ Nat Cheng Kung
Priority to TW94110325A priority Critical patent/TWI252520B/en
Application granted granted Critical
Publication of TWI252520B publication Critical patent/TWI252520B/en
Publication of TW200634907A publication Critical patent/TW200634907A/en

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  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Shaping Of Tube Ends By Bending Or Straightening (AREA)

Abstract

A reversal micro/nano-imprinting process without residual layer of resist is described. In the reversal micro/nano-imprinting process, a mold contain micro/nano scale pattern is provided, and the imprinting pattern includes at least one open region. A releasing layer is formed by vacuum-deposition or chemical bond to cover the surface of the mold. Then, the surface of the mold contain releasing layer was treated by surfactant and a surfactant layer is formed to cover on the releasing layer. The surfactant layer outside the open region on the surface of the mold is removed. Then, a coating step is performed to fill a resist into the open region. A hard or flexible substrate is provided. Subsequently, a contact-imprinting step is performed to press closely the surface of the mold and a surface of the applied substrate, so as to transfer the patterned-resist completely onto the surface of the substrate without the residual layer of resist.
TW94110325A 2005-03-31 2005-03-31 Reversal micro/nano imprinting process without residual layer of resist TWI252520B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW94110325A TWI252520B (en) 2005-03-31 2005-03-31 Reversal micro/nano imprinting process without residual layer of resist

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW94110325A TWI252520B (en) 2005-03-31 2005-03-31 Reversal micro/nano imprinting process without residual layer of resist

Publications (2)

Publication Number Publication Date
TWI252520B TWI252520B (en) 2006-04-01
TW200634907A true TW200634907A (en) 2006-10-01

Family

ID=37565443

Family Applications (1)

Application Number Title Priority Date Filing Date
TW94110325A TWI252520B (en) 2005-03-31 2005-03-31 Reversal micro/nano imprinting process without residual layer of resist

Country Status (1)

Country Link
TW (1) TWI252520B (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9323143B2 (en) 2008-02-05 2016-04-26 Canon Nanotechnologies, Inc. Controlling template surface composition in nano-imprint lithography
TWI394241B (en) * 2008-06-17 2013-04-21 Univ Nat Chunghsing An electronic component with viscose self - forming structure

Also Published As

Publication number Publication date
TWI252520B (en) 2006-04-01

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Legal Events

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MM4A Annulment or lapse of patent due to non-payment of fees