TW200633075A - CMOS-MEMS process - Google Patents
CMOS-MEMS processInfo
- Publication number
- TW200633075A TW200633075A TW094139507A TW94139507A TW200633075A TW 200633075 A TW200633075 A TW 200633075A TW 094139507 A TW094139507 A TW 094139507A TW 94139507 A TW94139507 A TW 94139507A TW 200633075 A TW200633075 A TW 200633075A
- Authority
- TW
- Taiwan
- Prior art keywords
- micromachining
- cmos
- region
- mems process
- photoresist
- Prior art date
Links
- 238000000034 method Methods 0.000 title abstract 2
- 238000005459 micromachining Methods 0.000 abstract 3
- 229920002120 photoresistant polymer Polymers 0.000 abstract 2
- 239000011248 coating agent Substances 0.000 abstract 1
- 238000000576 coating method Methods 0.000 abstract 1
- 238000000059 patterning Methods 0.000 abstract 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00222—Integrating an electronic processing unit with a micromechanical structure
- B81C1/00246—Monolithic integration, i.e. micromechanical structure and electronic processing unit are integrated on the same substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/764—Air gaps
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
- H01L27/0617—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/10—Inductors
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C2203/00—Forming microstructural systems
- B81C2203/07—Integrating an electronic processing unit with a micromechanical structure
- B81C2203/0707—Monolithic integration, i.e. the electronic processing unit is formed on or in the same substrate as the micromechanical structure
- B81C2203/0735—Post-CMOS, i.e. forming the micromechanical structure after the CMOS circuit
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US62692304P | 2004-11-12 | 2004-11-12 |
Publications (2)
Publication Number | Publication Date |
---|---|
TW200633075A true TW200633075A (en) | 2006-09-16 |
TWI293787B TWI293787B (en) | 2008-02-21 |
Family
ID=45067961
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW094139507A TWI293787B (en) | 2004-11-12 | 2005-11-10 | Cmos-mems process |
Country Status (2)
Country | Link |
---|---|
US (1) | US7435612B2 (zh) |
TW (1) | TWI293787B (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI396242B (zh) * | 2009-08-11 | 2013-05-11 | Pixart Imaging Inc | 微電子裝置、微電子裝置的製造方法、微機電封裝結構及其封裝方法 |
Families Citing this family (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7813634B2 (en) | 2005-02-28 | 2010-10-12 | Tessera MEMS Technologies, Inc. | Autofocus camera |
US7645241B2 (en) * | 2004-09-09 | 2010-01-12 | Roche Diagnostics Operations, Inc. | Device for sampling bodily fluids |
US7838322B1 (en) * | 2005-02-28 | 2010-11-23 | Tessera MEMS Technologies, Inc. | Method of enhancing an etch system |
US7935556B2 (en) * | 2007-08-27 | 2011-05-03 | Memsmart Semiconductor Corp. | Microelectromechanical system and process of making the same |
TWI340121B (en) * | 2007-12-14 | 2011-04-11 | Memsmart Semiconductor Corp | A micro suspended structure and its manufacturing method |
US7989248B2 (en) * | 2009-07-02 | 2011-08-02 | Advanced Microfab, LLC | Method of forming monolithic CMOS-MEMS hybrid integrated, packaged structures |
ATE546410T1 (de) * | 2009-07-15 | 2012-03-15 | Nxp Bv | Grenzbeschleunigungsaufnehmer und herstellungsverfahren |
US8642986B2 (en) * | 2009-09-23 | 2014-02-04 | United Microelectronics Corp. | Integrated circuit having microelectromechanical system device and method of fabricating the same |
TWI484594B (zh) * | 2009-10-07 | 2015-05-11 | United Microelectronics Corp | 具有微機電系統元件之積體電路及其製造方法 |
TW201118035A (en) * | 2009-11-18 | 2011-06-01 | Nat Chip Implementation Ct Nat Applied Res Lab | Fabricating method of single chip for intergating with field-effect transistor and MEMS |
US8587078B2 (en) * | 2010-04-06 | 2013-11-19 | United Microelectronics Corp. | Integrated circuit and fabricating method thereof |
US8368153B2 (en) * | 2010-04-08 | 2013-02-05 | United Microelectronics Corp. | Wafer level package of MEMS microphone and manufacturing method thereof |
US8460960B2 (en) * | 2011-07-20 | 2013-06-11 | United Microelectronics Corp. | Method for fabricating integrated circuit |
TWI503950B (zh) * | 2011-07-20 | 2015-10-11 | United Microelectronics Corp | 積體電路的製造方法 |
FR2999335B1 (fr) * | 2012-12-06 | 2016-03-11 | Commissariat Energie Atomique | Procede ameliore de realisation d'un composant a structure suspendue et d'un transistor co-integres sur un meme substrat. |
US9400224B2 (en) | 2014-09-12 | 2016-07-26 | Industrial Technology Research Institute | Pressure sensor and manufacturing method of the same |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7026247B2 (en) * | 2003-10-28 | 2006-04-11 | International Business Machines Corporation | Nanocircuit and self-correcting etching method for fabricating same |
US7012322B2 (en) * | 2003-12-22 | 2006-03-14 | Honeywell International Inc. | Method for reducing harmonic distortion in comb drive devices |
-
2005
- 2005-11-10 US US11/270,523 patent/US7435612B2/en active Active
- 2005-11-10 TW TW094139507A patent/TWI293787B/zh active
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI396242B (zh) * | 2009-08-11 | 2013-05-11 | Pixart Imaging Inc | 微電子裝置、微電子裝置的製造方法、微機電封裝結構及其封裝方法 |
Also Published As
Publication number | Publication date |
---|---|
US7435612B2 (en) | 2008-10-14 |
US20060105543A1 (en) | 2006-05-18 |
TWI293787B (en) | 2008-02-21 |
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