TW200629391A - Apparatus for treating thin film and method of treating thin film - Google Patents

Apparatus for treating thin film and method of treating thin film

Info

Publication number
TW200629391A
TW200629391A TW094142137A TW94142137A TW200629391A TW 200629391 A TW200629391 A TW 200629391A TW 094142137 A TW094142137 A TW 094142137A TW 94142137 A TW94142137 A TW 94142137A TW 200629391 A TW200629391 A TW 200629391A
Authority
TW
Taiwan
Prior art keywords
thin film
substrate
energy source
treating thin
moved
Prior art date
Application number
TW094142137A
Other languages
English (en)
Other versions
TWI279855B (en
Inventor
Jong-Chul Lee
Sang-Hyuck Park
Original Assignee
Lg Philips Lcd Co Ltd
Lg Electronics Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lg Philips Lcd Co Ltd, Lg Electronics Inc filed Critical Lg Philips Lcd Co Ltd
Publication of TW200629391A publication Critical patent/TW200629391A/zh
Application granted granted Critical
Publication of TWI279855B publication Critical patent/TWI279855B/zh

Links

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/48—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
    • C23C16/483—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation using coherent light, UV to IR, e.g. lasers
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/04—Coating on selected surface areas, e.g. using masks
    • C23C16/047—Coating on selected surface areas, e.g. using masks using irradiation by energy or particles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45517—Confinement of gases to vicinity of substrate

Landscapes

  • Chemical & Material Sciences (AREA)
  • Metallurgy (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Toxicology (AREA)
  • Health & Medical Sciences (AREA)
  • Optics & Photonics (AREA)
  • Nonlinear Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical Vapour Deposition (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Liquid Crystal (AREA)
TW094142137A 2004-12-30 2005-11-30 Apparatus for treating thin film and method of treating thin film TWI279855B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020040116195A KR20060077363A (ko) 2004-12-30 2004-12-30 대기개방형 박막처리장치 및 이를 이용한 평판표시장치용기판의 박막처리방법

Publications (2)

Publication Number Publication Date
TW200629391A true TW200629391A (en) 2006-08-16
TWI279855B TWI279855B (en) 2007-04-21

Family

ID=36639100

Family Applications (1)

Application Number Title Priority Date Filing Date
TW094142137A TWI279855B (en) 2004-12-30 2005-11-30 Apparatus for treating thin film and method of treating thin film

Country Status (4)

Country Link
US (1) US9200369B2 (zh)
KR (1) KR20060077363A (zh)
CN (1) CN1796599A (zh)
TW (1) TWI279855B (zh)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100824964B1 (ko) * 2006-12-26 2008-04-28 주식회사 코윈디에스티 레이저를 이용한 금속박막 형성장치 및 그 방법
US9111729B2 (en) * 2009-12-03 2015-08-18 Lam Research Corporation Small plasma chamber systems and methods

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4778693A (en) * 1986-10-17 1988-10-18 Quantronix Corporation Photolithographic mask repair system
US4801352A (en) 1986-12-30 1989-01-31 Image Micro Systems, Inc. Flowing gas seal enclosure for processing workpiece surface with controlled gas environment and intense laser irradiation
JPH01244623A (ja) * 1988-03-25 1989-09-29 Matsushita Electric Ind Co Ltd 酸化膜の製造方法
US5103102A (en) * 1989-02-24 1992-04-07 Micrion Corporation Localized vacuum apparatus and method
US5385633A (en) * 1990-03-29 1995-01-31 The United States Of America As Represented By The Secretary Of The Navy Method for laser-assisted silicon etching using halocarbon ambients
US6159297A (en) * 1996-04-25 2000-12-12 Applied Materials, Inc. Semiconductor process chamber and processing method
IL127720A0 (en) * 1998-12-24 1999-10-28 Oramir Semiconductor Ltd Local particle cleaning
JP3109508B2 (ja) 1999-03-24 2000-11-20 日本電気株式会社 薄膜形成装置
JP3175731B2 (ja) * 1999-05-18 2001-06-11 日本電気株式会社 レーザｃｖｄ装置
US6649861B2 (en) * 2000-05-24 2003-11-18 Potomac Photonics, Inc. Method and apparatus for fabrication of miniature structures
US6764386B2 (en) * 2002-01-11 2004-07-20 Applied Materials, Inc. Air bearing-sealed micro-processing chamber

Also Published As

Publication number Publication date
US20060144687A1 (en) 2006-07-06
TWI279855B (en) 2007-04-21
KR20060077363A (ko) 2006-07-05
US9200369B2 (en) 2015-12-01
CN1796599A (zh) 2006-07-05

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