TW200625674A - Fabrication method for high brightness light emitting diode - Google Patents

Fabrication method for high brightness light emitting diode

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Publication number
TW200625674A
TW200625674A TW094101162A TW94101162A TW200625674A TW 200625674 A TW200625674 A TW 200625674A TW 094101162 A TW094101162 A TW 094101162A TW 94101162 A TW94101162 A TW 94101162A TW 200625674 A TW200625674 A TW 200625674A
Authority
TW
Taiwan
Prior art keywords
light emitting
substrate
epitaxial
high brightness
epitaxial film
Prior art date
Application number
TW094101162A
Other languages
Chinese (zh)
Other versions
TWI279928B (en
Inventor
Kun-You Lai
zheng-quan Chen
Original Assignee
Genesis Photonics Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Genesis Photonics Inc filed Critical Genesis Photonics Inc
Priority to TW94101162A priority Critical patent/TWI279928B/en
Publication of TW200625674A publication Critical patent/TW200625674A/en
Application granted granted Critical
Publication of TWI279928B publication Critical patent/TWI279928B/en

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Abstract

The invention provides a fabrication method for high brightness light emitting diode. It includes the following steps: (a) form a light emitting epitaxial film on the epitaxial substrate; (b) combine a conductive substrate on the light emitting epitaxial film placing the light emitting epitaxial film between the epitaxial substrate and the said electric conductive substrate; (C) remove the epitaxial substrate from the light emitting epitaxial film; (d) isolate the light emitting epitaxial film removed from the epitaxial substrate; (e) form plural electrodes on the light emitting epitaxial film removed from the epitaxial substrate; (f) form an electrode on the electric conductive substrate; and (g) roughen the light emitting epitaxial film removed from the epitaxial substrate.
TW94101162A 2005-01-14 2005-01-14 Fabrication method for high brightness light emitting diode TWI279928B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW94101162A TWI279928B (en) 2005-01-14 2005-01-14 Fabrication method for high brightness light emitting diode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW94101162A TWI279928B (en) 2005-01-14 2005-01-14 Fabrication method for high brightness light emitting diode

Publications (2)

Publication Number Publication Date
TW200625674A true TW200625674A (en) 2006-07-16
TWI279928B TWI279928B (en) 2007-04-21

Family

ID=38645541

Family Applications (1)

Application Number Title Priority Date Filing Date
TW94101162A TWI279928B (en) 2005-01-14 2005-01-14 Fabrication method for high brightness light emitting diode

Country Status (1)

Country Link
TW (1) TWI279928B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7838317B2 (en) 2006-08-21 2010-11-23 Samsung Led Co., Ltd. Vertical nitride semiconductor light emitting diode and method of manufacturing the same

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7838317B2 (en) 2006-08-21 2010-11-23 Samsung Led Co., Ltd. Vertical nitride semiconductor light emitting diode and method of manufacturing the same
US8178378B2 (en) 2006-08-21 2012-05-15 Samsung Electro-Mechanics Co., Ltd. Method of manufacturing vertical nitride semiconductor light emitting diode
US8198114B2 (en) 2006-08-21 2012-06-12 Samsung Led Co., Ltd. Vertical nitride semiconductor light emitting diode and method of manufacturing the same

Also Published As

Publication number Publication date
TWI279928B (en) 2007-04-21

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