TW200625674A - Fabrication method for high brightness light emitting diode - Google Patents
Fabrication method for high brightness light emitting diodeInfo
- Publication number
- TW200625674A TW200625674A TW094101162A TW94101162A TW200625674A TW 200625674 A TW200625674 A TW 200625674A TW 094101162 A TW094101162 A TW 094101162A TW 94101162 A TW94101162 A TW 94101162A TW 200625674 A TW200625674 A TW 200625674A
- Authority
- TW
- Taiwan
- Prior art keywords
- light emitting
- substrate
- epitaxial
- high brightness
- epitaxial film
- Prior art date
Links
Landscapes
- Led Devices (AREA)
Abstract
The invention provides a fabrication method for high brightness light emitting diode. It includes the following steps: (a) form a light emitting epitaxial film on the epitaxial substrate; (b) combine a conductive substrate on the light emitting epitaxial film placing the light emitting epitaxial film between the epitaxial substrate and the said electric conductive substrate; (C) remove the epitaxial substrate from the light emitting epitaxial film; (d) isolate the light emitting epitaxial film removed from the epitaxial substrate; (e) form plural electrodes on the light emitting epitaxial film removed from the epitaxial substrate; (f) form an electrode on the electric conductive substrate; and (g) roughen the light emitting epitaxial film removed from the epitaxial substrate.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW94101162A TWI279928B (en) | 2005-01-14 | 2005-01-14 | Fabrication method for high brightness light emitting diode |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW94101162A TWI279928B (en) | 2005-01-14 | 2005-01-14 | Fabrication method for high brightness light emitting diode |
Publications (2)
Publication Number | Publication Date |
---|---|
TW200625674A true TW200625674A (en) | 2006-07-16 |
TWI279928B TWI279928B (en) | 2007-04-21 |
Family
ID=38645541
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW94101162A TWI279928B (en) | 2005-01-14 | 2005-01-14 | Fabrication method for high brightness light emitting diode |
Country Status (1)
Country | Link |
---|---|
TW (1) | TWI279928B (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7838317B2 (en) | 2006-08-21 | 2010-11-23 | Samsung Led Co., Ltd. | Vertical nitride semiconductor light emitting diode and method of manufacturing the same |
-
2005
- 2005-01-14 TW TW94101162A patent/TWI279928B/en active
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7838317B2 (en) | 2006-08-21 | 2010-11-23 | Samsung Led Co., Ltd. | Vertical nitride semiconductor light emitting diode and method of manufacturing the same |
US8178378B2 (en) | 2006-08-21 | 2012-05-15 | Samsung Electro-Mechanics Co., Ltd. | Method of manufacturing vertical nitride semiconductor light emitting diode |
US8198114B2 (en) | 2006-08-21 | 2012-06-12 | Samsung Led Co., Ltd. | Vertical nitride semiconductor light emitting diode and method of manufacturing the same |
Also Published As
Publication number | Publication date |
---|---|
TWI279928B (en) | 2007-04-21 |
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