TW200625349A - High power chip resistor structure with double-layer resistor layer - Google Patents

High power chip resistor structure with double-layer resistor layer

Info

Publication number
TW200625349A
TW200625349A TW094100594A TW94100594A TW200625349A TW 200625349 A TW200625349 A TW 200625349A TW 094100594 A TW094100594 A TW 094100594A TW 94100594 A TW94100594 A TW 94100594A TW 200625349 A TW200625349 A TW 200625349A
Authority
TW
Taiwan
Prior art keywords
layer
resistor
conductive layer
double
high power
Prior art date
Application number
TW094100594A
Other languages
Chinese (zh)
Other versions
TWI264737B (en
Inventor
Qing-Lin Ji
song-hong Xu
Dong-Yi Zhou
Wen-Jun Zhen
Original Assignee
Prosperity Dielectrics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Prosperity Dielectrics Co Ltd filed Critical Prosperity Dielectrics Co Ltd
Priority to TW94100594A priority Critical patent/TWI264737B/en
Publication of TW200625349A publication Critical patent/TW200625349A/en
Application granted granted Critical
Publication of TWI264737B publication Critical patent/TWI264737B/en

Links

Abstract

This invention provides a kind of high power chip resistor structure with double-layer resistor layer. There are a surface conductive layer and a backside conductive layer formed on a substrate. A first resistor layer is formed on the substrate and the surface of the surface conductive layer, in which the two ends of the first resistor layer are separately electrically connected with the surface conductive layer. A second resistor layer is formed on the substrate and the surface of the backside conductive layer, in which the two ends of the second resistor layer are separately electrically connected with the surface conductive layer. The two ends of the chip resistor further comprises an electrically conductive layer, a nickel layer and a tin layer in sequence, in which the tin layer can be soldered onto a circuit substrate.
TW94100594A 2005-01-10 2005-01-10 High-power chip resistor structure with dual-layer resistance TWI264737B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW94100594A TWI264737B (en) 2005-01-10 2005-01-10 High-power chip resistor structure with dual-layer resistance

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW94100594A TWI264737B (en) 2005-01-10 2005-01-10 High-power chip resistor structure with dual-layer resistance

Publications (2)

Publication Number Publication Date
TW200625349A true TW200625349A (en) 2006-07-16
TWI264737B TWI264737B (en) 2006-10-21

Family

ID=37969447

Family Applications (1)

Application Number Title Priority Date Filing Date
TW94100594A TWI264737B (en) 2005-01-10 2005-01-10 High-power chip resistor structure with dual-layer resistance

Country Status (1)

Country Link
TW (1) TWI264737B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115148434A (en) * 2022-07-26 2022-10-04 钧崴电子科技股份有限公司 Resistor structure and manufacturing method thereof

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI603347B (en) * 2015-04-08 2017-10-21 Wafer resistance terminal electrode structure
US9552908B2 (en) 2015-06-16 2017-01-24 National Cheng Kung University Chip resistor device having terminal electrodes

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115148434A (en) * 2022-07-26 2022-10-04 钧崴电子科技股份有限公司 Resistor structure and manufacturing method thereof

Also Published As

Publication number Publication date
TWI264737B (en) 2006-10-21

Similar Documents

Publication Publication Date Title
TW200725880A (en) Semiconductor piezoresistive sensor and operation method thereof
WO2010038179A3 (en) An oled device and an electronic circuit
WO2007149362A3 (en) Solid state light sheet and bare die semiconductor circuits with series connected bare die circuit elements
TW200742249A (en) Semiconductor device, manufacturing method for semiconductor device, electronic component, circuit substrate, and electronic apparatus
WO2008051596A3 (en) Solid state light sheet and encapsulated bare die semiconductor circuits
TW200501182A (en) A capacitor structure
WO2006020345A3 (en) Electrical contact encapsulation
TW200701854A (en) Communication circuit module
WO2009057654A1 (en) Part built-in wiring board, and manufacturing method for the part built-in wiring board
TW200603387A (en) Interconnect structure with wings
WO2009066504A1 (en) Module with embedded components
WO2006094025A3 (en) Fabricated adhesive microstructures for making an electrical connection
TW200733022A (en) Emissive device and electronic apparatus
TW200718299A (en) Wiring board, wiring material, copper-clad laminate, and wiring board fabrication method
TW200631059A (en) Semiconducor device and manufacturing method thereof
WO2009013826A1 (en) Semiconductor device
TW200511534A (en) Tape circuit substrate and semiconductor chip package using the same
WO2005086855A3 (en) Electronic junction devices featuring redox electrodes
DK1393605T3 (en) Circuit board with at least one electronic component
TWI267173B (en) Circuit device and method for manufacturing thereof
TW200741895A (en) Package using array capacitor core
TW200509746A (en) Organic electronic device
TW200625349A (en) High power chip resistor structure with double-layer resistor layer
WO2009004759A1 (en) Thermoelectric device
WO2009054236A1 (en) Planar antenna and method for manufacturing the same