TW200623418A - Thin film transistor and fabricating method thereof - Google Patents
Thin film transistor and fabricating method thereofInfo
- Publication number
- TW200623418A TW200623418A TW093139966A TW93139966A TW200623418A TW 200623418 A TW200623418 A TW 200623418A TW 093139966 A TW093139966 A TW 093139966A TW 93139966 A TW93139966 A TW 93139966A TW 200623418 A TW200623418 A TW 200623418A
- Authority
- TW
- Taiwan
- Prior art keywords
- channel layer
- thin film
- film transistor
- layer
- electrode
- Prior art date
Links
Abstract
A thin film transistor and fabricating method thereof are provided. The thin film transistor includes a substrate, a gate electrode, a gate insulating layer, an island-in structure, a source electrode, a drain electrode and a heavily doped semiconductor layer. The gate electrode is set on the substrate and covered by the gate insulating layer. The island-in structure including a channel layer and an insulating spacer is set on the gate insulating layer. In addition, the insulating spacer covers the sidewall of the channel layer. Besides, the source electrode and the drain electrode are located on the two sides of the channel layer oppositely. The source electrode, the drain electrode and the channel layer are not contact with each other. Furthermore, the heavily doped semiconductor layer is located between the source electrode and the channel layer and between the drain electrode and the channel layer.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW93139966A TWI270987B (en) | 2004-12-22 | 2004-12-22 | Thin film transistor and fabricating method thereof |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW93139966A TWI270987B (en) | 2004-12-22 | 2004-12-22 | Thin film transistor and fabricating method thereof |
Publications (2)
Publication Number | Publication Date |
---|---|
TW200623418A true TW200623418A (en) | 2006-07-01 |
TWI270987B TWI270987B (en) | 2007-01-11 |
Family
ID=38430327
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW93139966A TWI270987B (en) | 2004-12-22 | 2004-12-22 | Thin film transistor and fabricating method thereof |
Country Status (1)
Country | Link |
---|---|
TW (1) | TWI270987B (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI557921B (en) * | 2007-08-07 | 2016-11-11 | 半導體能源研究所股份有限公司 | Display device and electronic device having the display device, and method for manufacturing thereof |
-
2004
- 2004-12-22 TW TW93139966A patent/TWI270987B/en not_active IP Right Cessation
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI557921B (en) * | 2007-08-07 | 2016-11-11 | 半導體能源研究所股份有限公司 | Display device and electronic device having the display device, and method for manufacturing thereof |
Also Published As
Publication number | Publication date |
---|---|
TWI270987B (en) | 2007-01-11 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
MM4A | Annulment or lapse of patent due to non-payment of fees |