TW200623418A - Thin film transistor and fabricating method thereof - Google Patents

Thin film transistor and fabricating method thereof

Info

Publication number
TW200623418A
TW200623418A TW093139966A TW93139966A TW200623418A TW 200623418 A TW200623418 A TW 200623418A TW 093139966 A TW093139966 A TW 093139966A TW 93139966 A TW93139966 A TW 93139966A TW 200623418 A TW200623418 A TW 200623418A
Authority
TW
Taiwan
Prior art keywords
channel layer
thin film
film transistor
layer
electrode
Prior art date
Application number
TW093139966A
Other languages
Chinese (zh)
Other versions
TWI270987B (en
Inventor
Ting-Chang Chang
Chi-Wen Chen
Po-Tsun Liu
Ming-Chaung Wang
Ya-Hsiang Tai
Original Assignee
Univ Nat Sun Yat Sen
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Univ Nat Sun Yat Sen filed Critical Univ Nat Sun Yat Sen
Priority to TW93139966A priority Critical patent/TWI270987B/en
Publication of TW200623418A publication Critical patent/TW200623418A/en
Application granted granted Critical
Publication of TWI270987B publication Critical patent/TWI270987B/en

Links

Abstract

A thin film transistor and fabricating method thereof are provided. The thin film transistor includes a substrate, a gate electrode, a gate insulating layer, an island-in structure, a source electrode, a drain electrode and a heavily doped semiconductor layer. The gate electrode is set on the substrate and covered by the gate insulating layer. The island-in structure including a channel layer and an insulating spacer is set on the gate insulating layer. In addition, the insulating spacer covers the sidewall of the channel layer. Besides, the source electrode and the drain electrode are located on the two sides of the channel layer oppositely. The source electrode, the drain electrode and the channel layer are not contact with each other. Furthermore, the heavily doped semiconductor layer is located between the source electrode and the channel layer and between the drain electrode and the channel layer.
TW93139966A 2004-12-22 2004-12-22 Thin film transistor and fabricating method thereof TWI270987B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW93139966A TWI270987B (en) 2004-12-22 2004-12-22 Thin film transistor and fabricating method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW93139966A TWI270987B (en) 2004-12-22 2004-12-22 Thin film transistor and fabricating method thereof

Publications (2)

Publication Number Publication Date
TW200623418A true TW200623418A (en) 2006-07-01
TWI270987B TWI270987B (en) 2007-01-11

Family

ID=38430327

Family Applications (1)

Application Number Title Priority Date Filing Date
TW93139966A TWI270987B (en) 2004-12-22 2004-12-22 Thin film transistor and fabricating method thereof

Country Status (1)

Country Link
TW (1) TWI270987B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI557921B (en) * 2007-08-07 2016-11-11 半導體能源研究所股份有限公司 Display device and electronic device having the display device, and method for manufacturing thereof

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI557921B (en) * 2007-08-07 2016-11-11 半導體能源研究所股份有限公司 Display device and electronic device having the display device, and method for manufacturing thereof

Also Published As

Publication number Publication date
TWI270987B (en) 2007-01-11

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Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees