TW200619614A - Coulomb blockade device operated under room temperature - Google Patents

Coulomb blockade device operated under room temperature

Info

Publication number
TW200619614A
TW200619614A TW093138578A TW93138578A TW200619614A TW 200619614 A TW200619614 A TW 200619614A TW 093138578 A TW093138578 A TW 093138578A TW 93138578 A TW93138578 A TW 93138578A TW 200619614 A TW200619614 A TW 200619614A
Authority
TW
Taiwan
Prior art keywords
room temperature
coulomb blockade
under room
operated under
device operated
Prior art date
Application number
TW093138578A
Other languages
Chinese (zh)
Other versions
TWI273237B (en
Inventor
Fu-Hsiang Ko
Chien-Ying Tsai
Chun-Chi Chen
Ping-Hei Chen
Original Assignee
Nat Applied Res Laboratries
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nat Applied Res Laboratries filed Critical Nat Applied Res Laboratries
Priority to TW93138578A priority Critical patent/TWI273237B/en
Publication of TW200619614A publication Critical patent/TW200619614A/en
Application granted granted Critical
Publication of TWI273237B publication Critical patent/TWI273237B/en

Links

Abstract

A coulomb blockade device operated under room temperature. The device comprises a substrate with an oxide layer formed thereon, a source and a drain installed on the oxide layer, a first gold nanoparticle immobilized on the oxide layer and between the source and drain, and a second gold nanoparticle above the first gold nanoparticle, wherein the first and second gold nanoparticles are connected by a hybrid DNA. A method of fabricating the coulomb blockade device is also provided.
TW93138578A 2004-12-13 2004-12-13 Coulomb blockade device operated under room temperature TWI273237B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW93138578A TWI273237B (en) 2004-12-13 2004-12-13 Coulomb blockade device operated under room temperature

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW93138578A TWI273237B (en) 2004-12-13 2004-12-13 Coulomb blockade device operated under room temperature

Publications (2)

Publication Number Publication Date
TW200619614A true TW200619614A (en) 2006-06-16
TWI273237B TWI273237B (en) 2007-02-11

Family

ID=38621438

Family Applications (1)

Application Number Title Priority Date Filing Date
TW93138578A TWI273237B (en) 2004-12-13 2004-12-13 Coulomb blockade device operated under room temperature

Country Status (1)

Country Link
TW (1) TWI273237B (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI632599B (en) * 2013-08-27 2018-08-11 量子生物系統公司 Nano-gap electrode and methods for manufacturing same
US10202644B2 (en) 2010-03-03 2019-02-12 Quantum Biosystems Inc. Method and device for identifying nucleotide, and method and device for determining nucleotide sequence of polynucleotide
US10261066B2 (en) 2013-10-16 2019-04-16 Quantum Biosystems Inc. Nano-gap electrode pair and method of manufacturing same
US10413903B2 (en) 2014-05-08 2019-09-17 Osaka University Devices, systems and methods for linearization of polymers
US10438811B1 (en) 2014-04-15 2019-10-08 Quantum Biosystems Inc. Methods for forming nano-gap electrodes for use in nanosensors
US10557167B2 (en) 2013-09-18 2020-02-11 Quantum Biosystems Inc. Biomolecule sequencing devices, systems and methods

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10202644B2 (en) 2010-03-03 2019-02-12 Quantum Biosystems Inc. Method and device for identifying nucleotide, and method and device for determining nucleotide sequence of polynucleotide
US10876159B2 (en) 2010-03-03 2020-12-29 Quantum Biosystems Inc. Method and device for identifying nucleotide, and method and device for determining nucleotide sequence of polynucleotide
TWI632599B (en) * 2013-08-27 2018-08-11 量子生物系統公司 Nano-gap electrode and methods for manufacturing same
US10557167B2 (en) 2013-09-18 2020-02-11 Quantum Biosystems Inc. Biomolecule sequencing devices, systems and methods
US10261066B2 (en) 2013-10-16 2019-04-16 Quantum Biosystems Inc. Nano-gap electrode pair and method of manufacturing same
US10466228B2 (en) 2013-10-16 2019-11-05 Quantum Biosystems Inc. Nano-gap electrode pair and method of manufacturing same
US10438811B1 (en) 2014-04-15 2019-10-08 Quantum Biosystems Inc. Methods for forming nano-gap electrodes for use in nanosensors
US10413903B2 (en) 2014-05-08 2019-09-17 Osaka University Devices, systems and methods for linearization of polymers

Also Published As

Publication number Publication date
TWI273237B (en) 2007-02-11

Similar Documents

Publication Publication Date Title
WO2007058715A3 (en) Method of fabricating a silicon nitride stack
EP2084750A1 (en) Semiconductor device and its drive method
WO2007053202A3 (en) Systems and methods for nanomaterial transfer
WO2007124209A3 (en) Stressor integration and method thereof
WO2007095061A3 (en) Device including semiconductor nanocrystals and a layer including a doped organic material and methods
DE602009000556D1 (en) A manufacturing method of a self-aligned baseplate and gate SOI transistor having a variable thickness buried oxide layer
WO2007127503A3 (en) Structure and method for mosfet gate electrode landing pad
EP1361619A3 (en) Organic thin-film transistor, organic thin-film transistor sheet and manufacturing method thereof
WO2010002718A3 (en) Method of forming stacked trench contacts and structures formed thereby
TW200603261A (en) Method of forming a recessed structure employing a reverse tone process
EP2312425A3 (en) Transparent conductive film, method for production thereof and touch panel therewith
WO2008133718A3 (en) A gas separation membrane system and method of making thereof using nanoscale metal material
TW200607094A (en) Semiconductor device and method of manufacturing thereof
TW200635037A (en) Semiconductor device with increased channel length and method for fabricating the same
TW200709415A (en) Gate pattern of semiconductor device and method for fabricating the same
EP1455007A3 (en) Method for depositing and patterning carbon nanotubes using chemical self-assembly process
WO2004086458A3 (en) Electronic device including a self-assembled monolayer, and a method of fabricating the same
TW200715621A (en) Procedure for producing a semiconductor component with a planner contact and the semiconductor component
TW200709427A (en) Wire structure, a method for fabricating a wire, a thin film transistor substrate, and a method for fabricating the thin film transistor substrate
EP1770783A3 (en) Thin film transistor and method of fabricating the same
WO2009069248A1 (en) Method for manufacturing flexible semiconductor device and flexible semiconductor device
TW200709430A (en) Method for forming a thin-film transistor
WO2007076250A3 (en) Semiconductor device fabricated using sublimation
WO2009001780A1 (en) Semiconductor device and method for manufacturing the same
TW200619614A (en) Coulomb blockade device operated under room temperature

Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees