TW200618071A - Silicon substrate III family nitrogen based semiconductor material and growth method thereof - Google Patents

Silicon substrate III family nitrogen based semiconductor material and growth method thereof

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Publication number
TW200618071A
TW200618071A TW093135035A TW93135035A TW200618071A TW 200618071 A TW200618071 A TW 200618071A TW 093135035 A TW093135035 A TW 093135035A TW 93135035 A TW93135035 A TW 93135035A TW 200618071 A TW200618071 A TW 200618071A
Authority
TW
Taiwan
Prior art keywords
layer
silicon substrate
semiconductor material
iii family
nitrogen based
Prior art date
Application number
TW093135035A
Other languages
Chinese (zh)
Other versions
TWI277141B (en
Inventor
yu-shun Zhang
Original Assignee
yu-shun Zhang
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by yu-shun Zhang filed Critical yu-shun Zhang
Priority to TW93135035A priority Critical patent/TWI277141B/en
Publication of TW200618071A publication Critical patent/TW200618071A/en
Application granted granted Critical
Publication of TWI277141B publication Critical patent/TWI277141B/en

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  • Crystals, And After-Treatments Of Crystals (AREA)
  • Recrystallisation Techniques (AREA)
  • Led Devices (AREA)

Abstract

Disclosed is a silicon substrate III family nitrogen based semiconductor material and a growth method thereof, which is grown on a surface of an intermediate transition layer. The transition layer has the following structure: a layer of a zirconium boride film or a strain relief film or a combination of both; a layer of A10.26Ga0.74N that matches crystal lattice of zirconium boride, and a single layer or plural layers of AlxGa1-xN (0 ≤ x ≤ 1) based buffer that are attached to the silicon substrate. The intermediate transition layer can be grown on a portion or whole surface of the silicon substrate and functions to prevent occurrence of crystal defect and suppress propagation of crystal dislocation when the matching of lattice between an extended layer and the substrate is incorrect. As such, at least one layer or plural layers of high quality III family nitrogen based composite semiconductor material are grown on the intermediate composite transition layer.
TW93135035A 2004-11-16 2004-11-16 Silicon substrate III family nitrogen based semiconductor material and growth method thereof TWI277141B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW93135035A TWI277141B (en) 2004-11-16 2004-11-16 Silicon substrate III family nitrogen based semiconductor material and growth method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW93135035A TWI277141B (en) 2004-11-16 2004-11-16 Silicon substrate III family nitrogen based semiconductor material and growth method thereof

Publications (2)

Publication Number Publication Date
TW200618071A true TW200618071A (en) 2006-06-01
TWI277141B TWI277141B (en) 2007-03-21

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Family Applications (1)

Application Number Title Priority Date Filing Date
TW93135035A TWI277141B (en) 2004-11-16 2004-11-16 Silicon substrate III family nitrogen based semiconductor material and growth method thereof

Country Status (1)

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TW (1) TWI277141B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI381557B (en) * 2008-08-29 2013-01-01 Taiwan Semiconductor Mfg Light emitting diode device and method for fabricating thereof

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI381557B (en) * 2008-08-29 2013-01-01 Taiwan Semiconductor Mfg Light emitting diode device and method for fabricating thereof

Also Published As

Publication number Publication date
TWI277141B (en) 2007-03-21

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