TW200616011A - Room-temperature tunneling magnetoresistance in la0.7Sr0.3Mno3 step-edge junctions - Google Patents

Room-temperature tunneling magnetoresistance in la0.7Sr0.3Mno3 step-edge junctions

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Publication number
TW200616011A
TW200616011A TW093134550A TW93134550A TW200616011A TW 200616011 A TW200616011 A TW 200616011A TW 093134550 A TW093134550 A TW 093134550A TW 93134550 A TW93134550 A TW 93134550A TW 200616011 A TW200616011 A TW 200616011A
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TW
Taiwan
Prior art keywords
tunneling
edge
magnetoresistance
devices
tunneling magnetoresistance
Prior art date
Application number
TW093134550A
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Chinese (zh)
Other versions
TWI269353B (en
Inventor
Li-Min Wang
Lien-Hui Hung
Jong-Ching Wu
Hong-Chang Yang
Herng-Er Horng
Original Assignee
Univ Da Yeh
Univ Nat Changhua Education
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Application filed by Univ Da Yeh, Univ Nat Changhua Education filed Critical Univ Da Yeh
Priority to TW93134550A priority Critical patent/TWI269353B/en
Publication of TW200616011A publication Critical patent/TW200616011A/en
Application granted granted Critical
Publication of TWI269353B publication Critical patent/TWI269353B/en

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Abstract

Room-temperature tunneling magnetoresistance in La0.7Sr0.3MnO3 (LSMO) step-edge junctions La0.7Sr0.3MnO3 tunneling magnetoresistance (TMR) junctions have been fabricated on step-edge (001) SrTiO3 substrates with a high step-edge angle, and it concludes that tunneling is the dominating mechanism and that the charge carriers at the surface boundary govern the tunneling conductivity. The La0.7Sr0.3MnO3 tunneling devices have been observed the phenomenon of tunneling conductivity at room temperature first of all, and it provides usages of every variety. The benefits of the invention of step-edge junction are uncomplicated process and simple design. This invention fabricates successfully the tunneling magnetoresistance devices by using La0.7Sr0.3MnO3 films. The maximum magnetoresistance of the devices can reach thirty percentages at 5 K. In addition the step-edge angles of the best La0.7Sr0.3MnO3 tunneling magnetoresistance devices are larger than seventy degrees, furthermore, 0.5 < the depth of the film/ the height of the step edge < 0.9. The surface-boundary magnetization will affect the bias polarization of electron spin of tunneling magnetoresistance.
TW93134550A 2004-11-11 2004-11-11 Room-temperature tunneling magnetoresistance in La0.7Sr0.3MnO3 step-edge junctions TWI269353B (en)

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TW93134550A TWI269353B (en) 2004-11-11 2004-11-11 Room-temperature tunneling magnetoresistance in La0.7Sr0.3MnO3 step-edge junctions

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Application Number Priority Date Filing Date Title
TW93134550A TWI269353B (en) 2004-11-11 2004-11-11 Room-temperature tunneling magnetoresistance in La0.7Sr0.3MnO3 step-edge junctions

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TW200616011A true TW200616011A (en) 2006-05-16
TWI269353B TWI269353B (en) 2006-12-21

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI570975B (en) * 2013-05-10 2017-02-11 宇能電科技股份有限公司 Magnatoresistive structure and method for forming the same

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI570975B (en) * 2013-05-10 2017-02-11 宇能電科技股份有限公司 Magnatoresistive structure and method for forming the same

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TWI269353B (en) 2006-12-21

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