TW200614260A - Internal voltage generator of semiconductor memory device - Google Patents

Internal voltage generator of semiconductor memory device

Info

Publication number
TW200614260A
TW200614260A TW093141576A TW93141576A TW200614260A TW 200614260 A TW200614260 A TW 200614260A TW 093141576 A TW093141576 A TW 093141576A TW 93141576 A TW93141576 A TW 93141576A TW 200614260 A TW200614260 A TW 200614260A
Authority
TW
Taiwan
Prior art keywords
voltage
internal
voltage generator
internal voltage
reference voltage
Prior art date
Application number
TW093141576A
Other languages
Chinese (zh)
Other versions
TWI267869B (en
Inventor
Kyung-Whan Kim
Original Assignee
Hynix Semiconductor Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hynix Semiconductor Inc filed Critical Hynix Semiconductor Inc
Publication of TW200614260A publication Critical patent/TW200614260A/en
Application granted granted Critical
Publication of TWI267869B publication Critical patent/TWI267869B/en

Links

Classifications

    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F1/00—Automatic systems in which deviations of an electric quantity from one or more predetermined values are detected at the output of the system and fed back to a device within the system to restore the detected quantity to its predetermined value or values, i.e. retroactive systems
    • G05F1/10—Regulating voltage or current
    • G05F1/46—Regulating voltage or current wherein the variable actually regulated by the final control device is dc
    • G05F1/462—Regulating voltage or current wherein the variable actually regulated by the final control device is dc as a function of the requirements of the load, e.g. delay, temperature, specific voltage/current characteristic
    • G05F1/465—Internal voltage generators for integrated circuits, e.g. step down generators
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G11C5/147—Voltage reference generators, voltage or current regulators; Internally lowered supply levels; Compensation for voltage drops

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Automation & Control Theory (AREA)
  • Dram (AREA)
  • Static Random-Access Memory (AREA)
  • Read Only Memory (AREA)
  • For Increasing The Reliability Of Semiconductor Memories (AREA)

Abstract

The present invention provides an internal voltage generator for maintaining a voltage level of an internal voltage by forcibly discharging an over-supplied voltage. The internal voltage generator includes a reference voltage generator for outputting at least one reference voltage with a predetermined voltage level after receiving an external voltage; a level shifter for outputting an internal reference voltage with a shifted voltage level by receiving the reference voltage of the reference voltage generator; a driver for outputting an internal voltage by using the internal reference voltage; and a discharging unit for forcibly discharging an over-supplied voltage of the internal voltage by a release pulse signal.
TW093141576A 2004-10-29 2004-12-31 Internal voltage generator of semiconductor memory device TWI267869B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020040087320A KR100623614B1 (en) 2004-10-29 2004-10-29 Internal voltage generator in semiconductor memory device

Publications (2)

Publication Number Publication Date
TW200614260A true TW200614260A (en) 2006-05-01
TWI267869B TWI267869B (en) 2006-12-01

Family

ID=36261111

Family Applications (1)

Application Number Title Priority Date Filing Date
TW093141576A TWI267869B (en) 2004-10-29 2004-12-31 Internal voltage generator of semiconductor memory device

Country Status (4)

Country Link
US (1) US7250811B2 (en)
JP (1) JP4578287B2 (en)
KR (1) KR100623614B1 (en)
TW (1) TWI267869B (en)

Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7002854B2 (en) * 2000-07-25 2006-02-21 Nec Electronics Corp. Internal voltage level control circuit and semiconductor memory device as well as method of controlling the same
US7518434B1 (en) * 2005-09-16 2009-04-14 Cypress Semiconductor Corporation Reference voltage circuit
US20070069809A1 (en) * 2005-09-29 2007-03-29 Hynix Semiconductor Inc. Internal voltage generator
KR100886628B1 (en) * 2006-05-10 2009-03-04 주식회사 하이닉스반도체 Internal voltage generation circuit in semiconductor device
KR100802073B1 (en) * 2006-05-31 2008-02-12 주식회사 하이닉스반도체 Internal voltage generator in semiconductor memory device
NL1032063C2 (en) * 2006-06-27 2008-01-02 Maasland Nv Combination of a teat cup and a flexible milk hose, coupling piece, and method for monitoring the integrity of a flexible milk hose.
KR100792430B1 (en) * 2006-06-30 2008-01-10 주식회사 하이닉스반도체 Internal voltage generator in semiconductor device
KR100784908B1 (en) 2006-08-11 2007-12-11 주식회사 하이닉스반도체 Apparatus for trimming voltage
KR100795014B1 (en) * 2006-09-13 2008-01-16 주식회사 하이닉스반도체 Internal voltage generator of semiconductor memory device
KR100862993B1 (en) * 2006-10-12 2008-10-13 주식회사 하이닉스반도체 Apparatus for Supplying Voltage in Semiconductor Integrated Circuit
KR100873613B1 (en) 2006-11-14 2008-12-12 주식회사 하이닉스반도체 Circuit and Method for Generating Voltage of Semiconductor Memory Apparatus
US8952832B2 (en) 2008-01-18 2015-02-10 Invensense, Inc. Interfacing application programs and motion sensors of a device
JP5057812B2 (en) * 2007-03-20 2012-10-24 株式会社東芝 Power supply step-down circuit
KR100845805B1 (en) * 2007-05-10 2008-07-14 주식회사 하이닉스반도체 Voltage down converter
KR100866967B1 (en) * 2007-05-10 2008-11-05 삼성전자주식회사 Irregular voltage detection and cutoff circuit using bandgap reference voltage generation circuit
KR100863015B1 (en) * 2007-05-11 2008-10-13 주식회사 하이닉스반도체 Circuit for stabilizing voltage of semiconductor memory apparatus
KR100889324B1 (en) * 2007-08-29 2009-03-18 주식회사 하이닉스반도체 VCORE release driver
KR100933695B1 (en) * 2008-04-15 2009-12-24 주식회사 하이닉스반도체 Semiconductor device
KR101003152B1 (en) * 2009-05-14 2010-12-21 주식회사 하이닉스반도체 Internal Voltage Generating Circuit of a Semiconductor Memory Apparatus
KR101131940B1 (en) * 2009-06-16 2012-04-12 주식회사 하이닉스반도체 Semiconductor device
KR101027699B1 (en) * 2010-01-29 2011-04-12 주식회사 하이닉스반도체 Circuit for trimming voltage of a semiconductor memory apparatus
JP5498896B2 (en) * 2010-08-26 2014-05-21 ルネサスエレクトロニクス株式会社 Semiconductor chip
KR102033528B1 (en) * 2013-03-14 2019-11-08 에스케이하이닉스 주식회사 Semiconductor Memory Device For Reducing Standby current
US9196375B2 (en) 2013-07-05 2015-11-24 Kabushiki Kaisha Toshiba Semiconductor storage device
KR102156230B1 (en) 2013-10-24 2020-09-15 삼성전자주식회사 Data storage device for forcibly discharging remaining voltage, method thereof, and data processing system having the same
KR102573270B1 (en) 2018-10-08 2023-08-31 삼성전자주식회사 Semiconductor memory apparatus and method of driving the same
EP4369340A1 (en) * 2022-11-11 2024-05-15 Samsung Electronics Co., Ltd. Memory device including voltage regulator

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2912498B2 (en) * 1992-07-02 1999-06-28 三菱電機株式会社 Semiconductor storage device
JP2874459B2 (en) * 1992-07-02 1999-03-24 日本電気株式会社 Semiconductor storage device
JP3569310B2 (en) * 1993-10-14 2004-09-22 株式会社ルネサステクノロジ Semiconductor storage device
JP3561012B2 (en) 1994-11-07 2004-09-02 株式会社ルネサステクノロジ Semiconductor integrated circuit device
JP2806324B2 (en) * 1995-08-25 1998-09-30 日本電気株式会社 Internal step-down circuit
DE69809013T2 (en) 1997-09-25 2003-06-18 Infineon Technologies Ag Improved device for current pulse generation in step-down voltage converters
JPH11231954A (en) * 1998-02-16 1999-08-27 Mitsubishi Electric Corp Internal power supply voltage generation circuit
JPH11238379A (en) 1998-02-19 1999-08-31 Oki Electric Ind Co Ltd Power source circuit and clock signal detecting circuit
JPH11288588A (en) * 1998-04-02 1999-10-19 Mitsubishi Electric Corp Semiconductor circuit device
JP3920467B2 (en) * 1998-08-31 2007-05-30 株式会社ルネサステクノロジ Semiconductor device
JP2000244322A (en) 1999-02-23 2000-09-08 Mitsubishi Electric Corp Semiconductor integrated circuit device
JP3180799B2 (en) * 1999-03-31 2001-06-25 日本電気株式会社 Voltage control device and voltage control method
US6563746B2 (en) 1999-11-09 2003-05-13 Fujitsu Limited Circuit for entering/exiting semiconductor memory device into/from low power consumption mode and method of controlling internal circuit at low power consumption mode
JP3696125B2 (en) * 2000-05-24 2005-09-14 株式会社東芝 Potential detection circuit and semiconductor integrated circuit
JP3869690B2 (en) * 2000-07-25 2007-01-17 Ｎｅｃエレクトロニクス株式会社 Internal voltage level control circuit, semiconductor memory device, and control method thereof
US6404252B1 (en) * 2000-07-31 2002-06-11 National Semiconductor Corporation No standby current consuming start up circuit
JP3920564B2 (en) 2000-12-25 2007-05-30 株式会社東芝 Magnetic random access memory
KR100396897B1 (en) 2001-08-14 2003-09-02 삼성전자주식회사 Voltage generating circuit for periphery, Semiconductor memory device having the circuit and method thereof
ITTO20020794A1 (en) 2002-09-12 2004-03-13 Atmel Corp SITEMA TO CHECK THE TRANSITIONS FROM THE MODE
US6861872B2 (en) 2003-02-05 2005-03-01 Infineon Technologies Ag Voltage down converter for low voltage operation

Also Published As

Publication number Publication date
KR20060038144A (en) 2006-05-03
US20060091938A1 (en) 2006-05-04
JP4578287B2 (en) 2010-11-10
US7250811B2 (en) 2007-07-31
JP2006127727A (en) 2006-05-18
TWI267869B (en) 2006-12-01
KR100623614B1 (en) 2006-09-19

Similar Documents

Publication Publication Date Title
TW200614260A (en) Internal voltage generator of semiconductor memory device
EP2031575A3 (en) Precharge controlling method and display device using the same
TW200703354A (en) Internally generating patterns for testing in an integrated circuit device
WO2007149212A3 (en) Rfid device with first clock for data acquisition and/or calibration of second clock
EP1562167A3 (en) Electro-luminescence display
AP2474A (en) Device for preventing the explosion of an electrical transformer
AU2003250755A8 (en) Circuit arrangement for generating an iq signal
DE60316862D1 (en) Fastening device for an implant
IL183505A0 (en) Device for the injection of a solid or semi-solid implant
TW200710857A (en) Programming memory devices
TW200740079A (en) Charging and discharging control circuit and charging type power supply device
TW200625259A (en) Driving voltage generating circuit and display device including the same
EP2120111A3 (en) Electronic device and method providing improved world clock feature
PL1828764T3 (en) Device for testing ferromagnetic component walls without destruction of the same
EP2028660A3 (en) Clock signal generator for generating stable clock signals, semiconductor memory device including the same, and methods of operating
TWI256051B (en) Internal voltage generating circuit
TW200708809A (en) Display device turned off by inserting object
WO2006065317A3 (en) Track-and-hold peak detector circuit
WO2007054344A3 (en) Integrated electronic circuit
TW200725213A (en) Clock switching circuit
TW200701589A (en) Apparatus for supplying power source
TW200707900A (en) Reference voltage generating circuit
EP2383629A3 (en) Protection circuit and electronic device using the same
TW200700954A (en) Reference voltage generating circuit
TW200707903A (en) Low power voltage detection circuit and method therefor

Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees