TW200612573A - Method of making high-brightness solid-state light-emitting device and the product made therefrom - Google Patents

Method of making high-brightness solid-state light-emitting device and the product made therefrom

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Publication number
TW200612573A
TW200612573A TW093130601A TW93130601A TW200612573A TW 200612573 A TW200612573 A TW 200612573A TW 093130601 A TW093130601 A TW 093130601A TW 93130601 A TW93130601 A TW 93130601A TW 200612573 A TW200612573 A TW 200612573A
Authority
TW
Taiwan
Prior art keywords
buffer layer
emitting device
state light
making high
brightness solid
Prior art date
Application number
TW093130601A
Other languages
Chinese (zh)
Other versions
TWI240441B (en
Inventor
Dong-Sing Wuu
Ray-Hua Horng
Original Assignee
Nat Univ Chung Hsing
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nat Univ Chung Hsing filed Critical Nat Univ Chung Hsing
Priority to TW93130601A priority Critical patent/TWI240441B/en
Application granted granted Critical
Publication of TWI240441B publication Critical patent/TWI240441B/en
Publication of TW200612573A publication Critical patent/TW200612573A/en

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Abstract

A method of making high-brightness solid-state light-emitting device comprises the steps of (A) providing a epitaxial substrate having a periodic structure of predetermined pattern, (B) forming a buffer layer on the predetermined pattern, (C) forming a epitaxial crystal on the buffer layer, (D) forming a reflector unit on the epitaxial crystal, (E) bonding the reflector unit with a heat dissipating member, (F) irradiating the epitaxial substrate by a laser to dissociate the buffer layer for separating the epitaxial substrate and the buffer layer and defining a roughened surface on the buffer layer, and (G) applying a device process to the epitaxial crystal in order to define a plurality of light emitting chips. This invention also provides a high-brightness solid-state light-emitting device made from the method stated above.
TW93130601A 2004-10-08 2004-10-08 Method of making high-brightness solid-state light-emitting device and the product made therefrom TWI240441B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW93130601A TWI240441B (en) 2004-10-08 2004-10-08 Method of making high-brightness solid-state light-emitting device and the product made therefrom

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW93130601A TWI240441B (en) 2004-10-08 2004-10-08 Method of making high-brightness solid-state light-emitting device and the product made therefrom

Publications (2)

Publication Number Publication Date
TWI240441B TWI240441B (en) 2005-09-21
TW200612573A true TW200612573A (en) 2006-04-16

Family

ID=37007761

Family Applications (1)

Application Number Title Priority Date Filing Date
TW93130601A TWI240441B (en) 2004-10-08 2004-10-08 Method of making high-brightness solid-state light-emitting device and the product made therefrom

Country Status (1)

Country Link
TW (1) TWI240441B (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI398022B (en) * 2010-03-17 2013-06-01 Univ Nat Chunghsing Separation method of epitaxial substrate of photovoltaic element
TWI425652B (en) * 2006-05-26 2014-02-01 Cree Inc Solid state light emitting device and method of making same

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI425652B (en) * 2006-05-26 2014-02-01 Cree Inc Solid state light emitting device and method of making same
TWI398022B (en) * 2010-03-17 2013-06-01 Univ Nat Chunghsing Separation method of epitaxial substrate of photovoltaic element

Also Published As

Publication number Publication date
TWI240441B (en) 2005-09-21

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MM4A Annulment or lapse of patent due to non-payment of fees