TW200607115A - Light emitting diode structure and manufacturing method of the same - Google Patents
Light emitting diode structure and manufacturing method of the sameInfo
- Publication number
- TW200607115A TW200607115A TW093123549A TW93123549A TW200607115A TW 200607115 A TW200607115 A TW 200607115A TW 093123549 A TW093123549 A TW 093123549A TW 93123549 A TW93123549 A TW 93123549A TW 200607115 A TW200607115 A TW 200607115A
- Authority
- TW
- Taiwan
- Prior art keywords
- light emitting
- emitting diode
- manufacturing
- same
- diode structure
- Prior art date
Links
Landscapes
- Led Devices (AREA)
Abstract
A light emitting diode( LED) structure comprises an substrate, a N-type epitaxy layer formed on the substrate, a light emitting layer formed on the N-type epitaxy layer, a P-type epitaxy layer formed on the light emitting layer, a nano-meter conductive layer formed on the P-type epitaxy layer, a transparent conductive layer formed on the nano-meter conductive layer, a first electrode formed on the transparent conductive layer to be a P-type bonding pad, and a second electrode formed on the N-type epitaxy layer to be a N-type bonding pad.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW93123549A TWI241727B (en) | 2004-08-05 | 2004-08-05 | Light emitting diode structure and manufacturing method of the same |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW93123549A TWI241727B (en) | 2004-08-05 | 2004-08-05 | Light emitting diode structure and manufacturing method of the same |
Publications (2)
Publication Number | Publication Date |
---|---|
TWI241727B TWI241727B (en) | 2005-10-11 |
TW200607115A true TW200607115A (en) | 2006-02-16 |
Family
ID=37014033
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW93123549A TWI241727B (en) | 2004-08-05 | 2004-08-05 | Light emitting diode structure and manufacturing method of the same |
Country Status (1)
Country | Link |
---|---|
TW (1) | TWI241727B (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103219432A (en) * | 2012-01-18 | 2013-07-24 | 泰谷光电科技股份有限公司 | Light emitting diode provided with rough surface and manufacturing method thereof |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI533351B (en) | 2006-12-11 | 2016-05-11 | 美國加利福尼亞大學董事會 | Metalorganic chemical vapor deposition (mocvd) growth of high performance non-polar iii-nitride optical devices |
-
2004
- 2004-08-05 TW TW93123549A patent/TWI241727B/en not_active IP Right Cessation
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103219432A (en) * | 2012-01-18 | 2013-07-24 | 泰谷光电科技股份有限公司 | Light emitting diode provided with rough surface and manufacturing method thereof |
Also Published As
Publication number | Publication date |
---|---|
TWI241727B (en) | 2005-10-11 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
MM4A | Annulment or lapse of patent due to non-payment of fees |