TW200607115A - Light emitting diode structure and manufacturing method of the same - Google Patents

Light emitting diode structure and manufacturing method of the same

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Publication number
TW200607115A
TW200607115A TW093123549A TW93123549A TW200607115A TW 200607115 A TW200607115 A TW 200607115A TW 093123549 A TW093123549 A TW 093123549A TW 93123549 A TW93123549 A TW 93123549A TW 200607115 A TW200607115 A TW 200607115A
Authority
TW
Taiwan
Prior art keywords
light emitting
emitting diode
manufacturing
same
diode structure
Prior art date
Application number
TW093123549A
Other languages
Chinese (zh)
Other versions
TWI241727B (en
Inventor
Shih-Chang Lee
Tshung-Han Tsai
Meng-Hsin Ye
Original Assignee
Advanced Epitaxy Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Advanced Epitaxy Technology filed Critical Advanced Epitaxy Technology
Priority to TW93123549A priority Critical patent/TWI241727B/en
Application granted granted Critical
Publication of TWI241727B publication Critical patent/TWI241727B/en
Publication of TW200607115A publication Critical patent/TW200607115A/en

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Abstract

A light emitting diode( LED) structure comprises an substrate, a N-type epitaxy layer formed on the substrate, a light emitting layer formed on the N-type epitaxy layer, a P-type epitaxy layer formed on the light emitting layer, a nano-meter conductive layer formed on the P-type epitaxy layer, a transparent conductive layer formed on the nano-meter conductive layer, a first electrode formed on the transparent conductive layer to be a P-type bonding pad, and a second electrode formed on the N-type epitaxy layer to be a N-type bonding pad.
TW93123549A 2004-08-05 2004-08-05 Light emitting diode structure and manufacturing method of the same TWI241727B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW93123549A TWI241727B (en) 2004-08-05 2004-08-05 Light emitting diode structure and manufacturing method of the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW93123549A TWI241727B (en) 2004-08-05 2004-08-05 Light emitting diode structure and manufacturing method of the same

Publications (2)

Publication Number Publication Date
TWI241727B TWI241727B (en) 2005-10-11
TW200607115A true TW200607115A (en) 2006-02-16

Family

ID=37014033

Family Applications (1)

Application Number Title Priority Date Filing Date
TW93123549A TWI241727B (en) 2004-08-05 2004-08-05 Light emitting diode structure and manufacturing method of the same

Country Status (1)

Country Link
TW (1) TWI241727B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103219432A (en) * 2012-01-18 2013-07-24 泰谷光电科技股份有限公司 Light emitting diode provided with rough surface and manufacturing method thereof

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI533351B (en) 2006-12-11 2016-05-11 美國加利福尼亞大學董事會 Metalorganic chemical vapor deposition (mocvd) growth of high performance non-polar iii-nitride optical devices

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103219432A (en) * 2012-01-18 2013-07-24 泰谷光电科技股份有限公司 Light emitting diode provided with rough surface and manufacturing method thereof

Also Published As

Publication number Publication date
TWI241727B (en) 2005-10-11

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Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees