TW200605339A - Image sensor and fabricating method thereof - Google Patents

Image sensor and fabricating method thereof

Info

Publication number
TW200605339A
TW200605339A TW093122849A TW93122849A TW200605339A TW 200605339 A TW200605339 A TW 200605339A TW 093122849 A TW093122849 A TW 093122849A TW 93122849 A TW93122849 A TW 93122849A TW 200605339 A TW200605339 A TW 200605339A
Authority
TW
Taiwan
Prior art keywords
silicon
insulator layer
layer
image sensor
optical device
Prior art date
Application number
TW093122849A
Other languages
Chinese (zh)
Other versions
TWI235490B (en
Inventor
Jui-Hsiang Pan
Cheng-Kueng Sun
Kuang-Chih Cheng
Kuang-Shin Lee
Original Assignee
United Microelectronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by United Microelectronics Corp filed Critical United Microelectronics Corp
Priority to TW93122849A priority Critical patent/TWI235490B/en
Application granted granted Critical
Publication of TWI235490B publication Critical patent/TWI235490B/en
Publication of TW200605339A publication Critical patent/TW200605339A/en

Links

Abstract

An image sensor comprising an image sensing device layer, a silicon on insulator layer, a optical device array and a substrate is provided. The silicon on insulator layer has a first surface and a second surface. The image sensing device layer is formed on the first surface of the silicon on insulator layer. The optical device array is formed on the second surface of silicon on insulator layer. The substrate is configured above the second surface of the silicon on insulator layer and the optical device array is located between the substrate and the silicon on insulator layer. After emitting through the optical device array and the silicon on insulator layer, the light from environment is received by the photo sensor device forming in the image sensing device layer so as to reduce the probability of the absorption or reflection of the light and improve the photo sensing efficiency of the image sensor.
TW93122849A 2004-07-30 2004-07-30 Image sensor and fabricating method thereof TWI235490B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW93122849A TWI235490B (en) 2004-07-30 2004-07-30 Image sensor and fabricating method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW93122849A TWI235490B (en) 2004-07-30 2004-07-30 Image sensor and fabricating method thereof

Publications (2)

Publication Number Publication Date
TWI235490B TWI235490B (en) 2005-07-01
TW200605339A true TW200605339A (en) 2006-02-01

Family

ID=36637690

Family Applications (1)

Application Number Title Priority Date Filing Date
TW93122849A TWI235490B (en) 2004-07-30 2004-07-30 Image sensor and fabricating method thereof

Country Status (1)

Country Link
TW (1) TWI235490B (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI567960B (en) * 2015-10-27 2017-01-21 晶睿通訊股份有限公司 Image sensor with multi-exposure property and related image generating method
US10644187B2 (en) 2015-07-24 2020-05-05 Artilux, Inc. Multi-wafer based light absorption apparatus and applications thereof
TWI713556B (en) * 2015-07-24 2020-12-21 光澄科技股份有限公司 Semiconductor light absorption structure and light absorption apparatus

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10644187B2 (en) 2015-07-24 2020-05-05 Artilux, Inc. Multi-wafer based light absorption apparatus and applications thereof
TWI713556B (en) * 2015-07-24 2020-12-21 光澄科技股份有限公司 Semiconductor light absorption structure and light absorption apparatus
US11271132B2 (en) 2015-07-24 2022-03-08 Artilux, Inc. Multi-wafer based light absorption apparatus and applications thereof
US11316065B2 (en) 2015-07-24 2022-04-26 Artilux, Inc. Multi-wafer based light absorption apparatus and applications thereof
TWI567960B (en) * 2015-10-27 2017-01-21 晶睿通訊股份有限公司 Image sensor with multi-exposure property and related image generating method

Also Published As

Publication number Publication date
TWI235490B (en) 2005-07-01

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