TW200605176A - A transistor and a method for forming a strained channel device - Google Patents

A transistor and a method for forming a strained channel device

Info

Publication number
TW200605176A
TW200605176A TW094124926A TW94124926A TW200605176A TW 200605176 A TW200605176 A TW 200605176A TW 094124926 A TW094124926 A TW 094124926A TW 94124926 A TW94124926 A TW 94124926A TW 200605176 A TW200605176 A TW 200605176A
Authority
TW
Taiwan
Prior art keywords
strained channel
source
substrate
transistor
forming
Prior art date
Application number
TW094124926A
Other languages
Chinese (zh)
Other versions
TWI279915B (en
Inventor
Yi-Chun Huang
Yen-Ping Wang
Chih-Hsin Ko
Original Assignee
Taiwan Semiconductor Mfg Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US10/897,563 external-priority patent/US7867860B2/en
Application filed by Taiwan Semiconductor Mfg Co Ltd filed Critical Taiwan Semiconductor Mfg Co Ltd
Publication of TW200605176A publication Critical patent/TW200605176A/en
Application granted granted Critical
Publication of TWI279915B publication Critical patent/TWI279915B/en

Links

Landscapes

  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Thin Film Transistor (AREA)

Abstract

A strained channel transistor is provided. The strained channel transistor comprises a substrate formed of a first material. A source region comprised of a second material is formed in a first recess in the substrate, and a drain region comprised of the second material is formed in a second recess in the substrate. A strained channel region formed of the first material is intermediate the source and drain region. A gate stack formed along a sidewall of the gate electrode overlies a portion of at least one of said source region and said drain region. A cap layer may be formed over the second material, and the source and drain regions may be silicided.
TW94124926A 2004-07-23 2005-07-22 A transistor and a method for forming a strained channel device TWI279915B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10/897,563 US7867860B2 (en) 2003-07-25 2004-07-23 Strained channel transistor formation

Publications (2)

Publication Number Publication Date
TW200605176A true TW200605176A (en) 2006-02-01
TWI279915B TWI279915B (en) 2007-04-21

Family

ID=36707063

Family Applications (1)

Application Number Title Priority Date Filing Date
TW94124926A TWI279915B (en) 2004-07-23 2005-07-22 A transistor and a method for forming a strained channel device

Country Status (2)

Country Link
CN (1) CN100401530C (en)
TW (1) TWI279915B (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7781799B2 (en) 2007-10-24 2010-08-24 Taiwan Semiconductor Manufacturing Company, Ltd. Source/drain strained layers
CN102129995B (en) * 2010-01-12 2012-12-05 中芯国际集成电路制造(上海)有限公司 Method for forming metal silicide contact layer and field effect transistor
CN104217952B (en) * 2013-06-04 2017-05-10 中芯国际集成电路制造(上海)有限公司 Manufacture method of semiconductor device
CN104681441A (en) * 2013-11-29 2015-06-03 中芯国际集成电路制造(上海)有限公司 Method for preventing embedded germanium silicon top cap layer from etching pollution

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002237590A (en) * 2001-02-09 2002-08-23 Univ Tohoku Mos field effect transistor
US6621131B2 (en) * 2001-11-01 2003-09-16 Intel Corporation Semiconductor transistor having a stressed channel
JP2003197906A (en) * 2001-12-28 2003-07-11 Fujitsu Ltd Semiconductor device and complementary semiconductor device
AU2003238963A1 (en) * 2002-06-07 2003-12-22 Amberwave Systems Corporation Semiconductor devices having strained dual channel layers
US6703648B1 (en) * 2002-10-29 2004-03-09 Advanced Micro Devices, Inc. Strained silicon PMOS having silicon germanium source/drain extensions and method for its fabrication
US7057216B2 (en) * 2003-10-31 2006-06-06 International Business Machines Corporation High mobility heterojunction complementary field effect transistors and methods thereof

Also Published As

Publication number Publication date
CN1761072A (en) 2006-04-19
CN100401530C (en) 2008-07-09
TWI279915B (en) 2007-04-21

Similar Documents

Publication Publication Date Title
TW200625634A (en) Transistor with strained region and method of manufacture
TW200601463A (en) Method and apparatus for a semiconductor device with a high-k gate dielectric
TW200625471A (en) Semiconductor device employing an extension spacer and method of forming the same
TW200625633A (en) High-mobility bulk silicon PFET
WO2005096387A3 (en) Semiconductor device having a laterally modulated gate workfunction and method of fabrication
TW200633125A (en) Semiconductor device and method of semiconductor device
WO2005089440A3 (en) Multiple dielectric finfet structure and method
KR100327347B1 (en) Metal oxide semiconductor field effect transistor having reduced resistance between source and drain and fabricating method thereof
TW200633074A (en) A method for making a semiconductor device having a high-k gate dielectric layer and a metal gate electrode
WO2007102870A3 (en) Strained silicon mos device with box layer between the source and drain regions
TW200703641A (en) Semiconductor device and fabrication method thereof
TW200610067A (en) Thin channel mosfet with source/drain stressors
TW200511583A (en) Strained-channel fin field effect transistor (FET) with a uniform channel thickness and separate gates
TW200742045A (en) Semiconductor device having a recess channel transistor
WO2004064172A3 (en) An enhancement mode metal-oxide-semiconductor field effect transistor and method for forming the same
TW200507255A (en) Semiconductor device and method of fabricating the same
TW200644237A (en) High-voltage MOS device
WO2010051133A3 (en) Semiconductor devices having faceted silicide contacts, and related fabrication methods
WO2007082266A3 (en) Semiconductor transistors with expanded top portions of gates
WO2007092653A3 (en) Method of forming a semiconductor device
TW200629476A (en) A method for making a semiconductor device with a high-k gate dielectric layer and a silicide gate electrode
TW200620479A (en) MOSFET device with localized stressor
TW200703563A (en) Method of forming a MOS device with an additional layer
TW200520171A (en) Ultra-thin channel device with raised source and drain and solid source extension doping
TW200715563A (en) Semiconductor device and method for manufacturing the same