TW200605176A - A transistor and a method for forming a strained channel device - Google Patents
A transistor and a method for forming a strained channel deviceInfo
- Publication number
- TW200605176A TW200605176A TW094124926A TW94124926A TW200605176A TW 200605176 A TW200605176 A TW 200605176A TW 094124926 A TW094124926 A TW 094124926A TW 94124926 A TW94124926 A TW 94124926A TW 200605176 A TW200605176 A TW 200605176A
- Authority
- TW
- Taiwan
- Prior art keywords
- strained channel
- source
- substrate
- transistor
- forming
- Prior art date
Links
Landscapes
- Insulated Gate Type Field-Effect Transistor (AREA)
- Thin Film Transistor (AREA)
Abstract
A strained channel transistor is provided. The strained channel transistor comprises a substrate formed of a first material. A source region comprised of a second material is formed in a first recess in the substrate, and a drain region comprised of the second material is formed in a second recess in the substrate. A strained channel region formed of the first material is intermediate the source and drain region. A gate stack formed along a sidewall of the gate electrode overlies a portion of at least one of said source region and said drain region. A cap layer may be formed over the second material, and the source and drain regions may be silicided.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/897,563 US7867860B2 (en) | 2003-07-25 | 2004-07-23 | Strained channel transistor formation |
Publications (2)
Publication Number | Publication Date |
---|---|
TW200605176A true TW200605176A (en) | 2006-02-01 |
TWI279915B TWI279915B (en) | 2007-04-21 |
Family
ID=36707063
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW94124926A TWI279915B (en) | 2004-07-23 | 2005-07-22 | A transistor and a method for forming a strained channel device |
Country Status (2)
Country | Link |
---|---|
CN (1) | CN100401530C (en) |
TW (1) | TWI279915B (en) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7781799B2 (en) | 2007-10-24 | 2010-08-24 | Taiwan Semiconductor Manufacturing Company, Ltd. | Source/drain strained layers |
CN102129995B (en) * | 2010-01-12 | 2012-12-05 | 中芯国际集成电路制造(上海)有限公司 | Method for forming metal silicide contact layer and field effect transistor |
CN104217952B (en) * | 2013-06-04 | 2017-05-10 | 中芯国际集成电路制造(上海)有限公司 | Manufacture method of semiconductor device |
CN104681441A (en) * | 2013-11-29 | 2015-06-03 | 中芯国际集成电路制造(上海)有限公司 | Method for preventing embedded germanium silicon top cap layer from etching pollution |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002237590A (en) * | 2001-02-09 | 2002-08-23 | Univ Tohoku | Mos field effect transistor |
US6621131B2 (en) * | 2001-11-01 | 2003-09-16 | Intel Corporation | Semiconductor transistor having a stressed channel |
JP2003197906A (en) * | 2001-12-28 | 2003-07-11 | Fujitsu Ltd | Semiconductor device and complementary semiconductor device |
AU2003238963A1 (en) * | 2002-06-07 | 2003-12-22 | Amberwave Systems Corporation | Semiconductor devices having strained dual channel layers |
US6703648B1 (en) * | 2002-10-29 | 2004-03-09 | Advanced Micro Devices, Inc. | Strained silicon PMOS having silicon germanium source/drain extensions and method for its fabrication |
US7057216B2 (en) * | 2003-10-31 | 2006-06-06 | International Business Machines Corporation | High mobility heterojunction complementary field effect transistors and methods thereof |
-
2005
- 2005-07-22 TW TW94124926A patent/TWI279915B/en active
- 2005-07-22 CN CNB2005100852731A patent/CN100401530C/en active Active
Also Published As
Publication number | Publication date |
---|---|
CN1761072A (en) | 2006-04-19 |
CN100401530C (en) | 2008-07-09 |
TWI279915B (en) | 2007-04-21 |
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