TW200605164A - Variable quadruple electromagnet array, particularly used in a multi-step process for forming a metal barrier in a sputter reactor - Google Patents

Variable quadruple electromagnet array, particularly used in a multi-step process for forming a metal barrier in a sputter reactor

Info

Publication number
TW200605164A
TW200605164A TW094116948A TW94116948A TW200605164A TW 200605164 A TW200605164 A TW 200605164A TW 094116948 A TW094116948 A TW 094116948A TW 94116948 A TW94116948 A TW 94116948A TW 200605164 A TW200605164 A TW 200605164A
Authority
TW
Taiwan
Prior art keywords
sputter
coil
chamber
target
step process
Prior art date
Application number
TW094116948A
Other languages
Chinese (zh)
Other versions
TWI337753B (en
Inventor
Tza-Ting Gung
xin-yu Fu
Arvind Sundarrajan
Iv Edward P Hammond
Praburam Gopalraja
John C Forster
Mark A Perrin
Andrew S Gillard
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US10/950,349 external-priority patent/US7527713B2/en
Priority claimed from US11/119,350 external-priority patent/US7686926B2/en
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of TW200605164A publication Critical patent/TW200605164A/en
Application granted granted Critical
Publication of TWI337753B publication Critical patent/TWI337753B/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
    • H01J37/3405—Magnetron sputtering
    • H01J37/3408—Planar magnetron sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3266—Magnetic control means
    • H01J37/32688—Multi-cusp fields

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

A sputter chamber and a multi-step process it enables. A quadruple electromagnet rectangular array coaxial with the chamber axis preferably in back of an RF coil within the chamber. The coil currents can be separately controlled to produce different magnetic field distributions, for example, between a sputter deposition mode in which the sputter target is powered to sputter target material onto a wafer and a sputter etch mode in which the RF coil supports the argon sputtering plasma. For an RF coil of the target material, the coil can be DC biased and the coil array acts as a magnetron. A multi-step process performed in such a plasma sputter chamber may include sputter deposition of a barrier material from the target under various conditions and argon sputter etching of the substrate. A TaN/Ta or other refractory barrier is first sputter deposited with high target power and wafer bias. Argon etching is performed with even higher wafer bias. A flash step is applied with reduced target power and wafer bias.
TW94116948A 2004-05-26 2005-05-24 Variable quadruple electromagnet array, particularly used in a multi-step process for forming a metal barrier in a sputter reactor TWI337753B (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US57490504P 2004-05-26 2004-05-26
US10/950,349 US7527713B2 (en) 2004-05-26 2004-09-23 Variable quadruple electromagnet array in plasma processing
US11/119,350 US7686926B2 (en) 2004-05-26 2005-04-29 Multi-step process for forming a metal barrier in a sputter reactor

Publications (2)

Publication Number Publication Date
TW200605164A true TW200605164A (en) 2006-02-01
TWI337753B TWI337753B (en) 2011-02-21

Family

ID=46123899

Family Applications (1)

Application Number Title Priority Date Filing Date
TW94116948A TWI337753B (en) 2004-05-26 2005-05-24 Variable quadruple electromagnet array, particularly used in a multi-step process for forming a metal barrier in a sputter reactor

Country Status (1)

Country Link
TW (1) TWI337753B (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI758830B (en) * 2018-05-09 2022-03-21 美商應用材料股份有限公司 Physical vapor deposition in-chamber electro-magnet
TWI811421B (en) * 2018-08-17 2023-08-11 美商應用材料股份有限公司 Coating material for processing chambers

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI758830B (en) * 2018-05-09 2022-03-21 美商應用材料股份有限公司 Physical vapor deposition in-chamber electro-magnet
TWI811421B (en) * 2018-08-17 2023-08-11 美商應用材料股份有限公司 Coating material for processing chambers

Also Published As

Publication number Publication date
TWI337753B (en) 2011-02-21

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