TW200536096A - Chip-type sensor against esd and stress damages and contamination interference - Google Patents

Abstract

A chip-type sensor against ESD and stress damages and contamination interference includes a substrate structure and a protection layer covering over the substrate structure. The protection layer includes, from bottom to top, a first layer for providing a first stress against the substrate structure, a second layer for providing a second stress against the substrate structure, and a third layer for providing a third stress against the substrate structure. The first stress and the third stress belong to one of a tensile stress and a compressive stress, and the second stress belongs to the other of the tensile and compressive stresses.

Description

200536096 V. Description of the invention (1) [Technical field to which the invention belongs] Said in: a kind of anti-static and stress damage and anti-fouling interference; 2: :: is a chip-type fingerprint sensor with a surface protection The design of the sublayer structure is ingenious and prevents the dryness caused by fingerprint residues; 2 for resistance to M, anti-static damage, to the assignee of the case 4 for two disturbances; the invention is related to transfer 091106_, t _ g 1 The Republic of China patent application serial number refers to η Μ / April 3, year, the invention name is "capacitive = two" application, = ^ ^ ^ ^, month date is May 6, 2003, and the invention name is " Capable of resisting: calcium carbide: and anti-fouling interference capacitive fingerprint sensor and its manufacturer / J 玍 华 民 民 Patent Application No. 0 9 2 1 246 97, the name of the invention is "can prevent fingerprint residue" Capacitive fingerprint sensor and its processing device Tai, Tu · Ώ /, 〇92 1 32 480, application date Υ20 ″ 0 = 4) Surface treatment method of the Republic of China patent application serial number device ΛΤ 田 月 20 said 'Invention The name is wafer and the wafer device formed by this method. " [Previous technology] In the wafer manufacturing methods provided in the field of conductor processing, it is usually necessary to hide the electrical characteristics of $ Γ = mention i, and to pass the chip through the packaging process Λ '4 substrate' to avoid, for example, pressure And any external force such as static electricity

Possible destruction. J Tieru follows the exposed part of the Bo Ri Sun; said: the development of application fields, new applications make it necessary to be naked ^ ^ 5 days and 5 clothes in the environment, such as chip-type fingerprint sensors will provide a Pan Feng ih & ^ Ding He contacted wafer surface (ROC patent application

200536096 V. Description of the invention (2) Serial number 0 9 1 1 0 6 8 0 6, the application date is April 3, 2002, the name of the invention is "capacitive fingerprint reading chip", patent pending), To read the lines of the finger, it is used for identification. For this reason, the mechanical characteristics of the wafer surface must be considered in order to protect the structure from the pressure of the fingers and anti-static damage. ^ For example, the capacitive fingerprint sensor chip needs to consider the residual fingerprint effect. Conventionally, the basic structure of a capacitive fingerprint sensor chip is to make related sensing and control processing electronics in a substrate, and arrange a plurality of metal plates of matrix type on the surface of the chip as sensing electrodes. The electrodes below include the sensing and control processing circuit and the silicon substrate will be collectively referred to as the substrate structure), and a dielectric material layer is formed on the outermost surface of the chip, which also serves as a sensing capacitor: the second quality and the protection of the chip exposed Floor. In order to achieve the above-mentioned surface of the wafer: the characteristics of financial grinding: the conventional technology uses a hard dielectric material ^ as a protective layer for the outer surface, such as the world patent, ^ 〇3 / 〇m41A1, US patent No. 6 091 〇82, European patent EP1256899, U.S. patent β 6,211, 8,62 and U.S. patent 6: 515,488, all disclose this structure. In short, it means that a hard material layer such as nitrogen cut, carbon cut, oxidized diamond or diamond is formed above the substrate structure, or a dielectric material, such as stone oxide, is used for both = :: 3. The gate of t is a soft rider. μ The hard material layer of gasified stone, carbonized stone, oxidized metal, or diamond. Although the material has good strength characteristics, it is more difficult to increase the thickness of the t plate, and the structure. The limitation is due to the thermal residual stress between the material layer and the substrate structure: usually nitriding μ

200536096 Fifth invention description (3) Silicon, silicon carbide, aluminum oxide or diamond will be structured as tensile stress (tensile str 彳 substrates based on substrates. These materials will be bonded to the substrate structure. "Thickness comes" not only is the chip I vulnerable to damage: it also causes breakage. "So-in the semiconductor process, only the thickness of the second method can be provided to withstand electrostatic damage. Usually the problem. Although ... there are still phase two 1 meter production to Avoid the above-mentioned easy-to-generate material defects and cause; the thermal residual stress of ㈡ is in it and cause damage. For this reason, to solve the thermal residual should be: increase = manufacturing (proportional to the cube of the machine), it becomes the second important problem. Solving electrostatic damage can be divided into: bu xiang = broken = proportional to the square of thickness :: Rugao's electrostatic field strength is a commercial integrated circuit manufacturing process, which is only about 1 micron (its The material is usually a dwelling of silicon oxide and silicon nitride. The electrostatic breakdown voltage (air mOde) that can withstand is about 1500. Because the protective layer structure of the above invention cannot effectively increase its thickness, the above invention cannot use protection only. The layer material achieves anti-electrostatic destruction 1 and the conduction = ground method is to use a bare metal mesh structure to trap the electrostatic charge V to ground, such as the above-mentioned inventions WO 0 1/0 6448M, W 0 0 3/0 9 8 54 1 A1 The European patent EP 1 25 68 9 9 has adopted the concept of this kind of metal conducting static electricity. It is used in many electronic products. The same lies in the need to consider the integrated circuit system when implementing on the surface of the wafer. For example, the world's special lion (Π / 关 8A1 exposes a bare metal mesh knot

200536096 V. Description of the invention (4) The structure is used as an electrostatic conduction structure, but the manufacturing process uses a single layer of T: N as the metal sensing electrode and the bare metal grid integrated circuit. The crystal is not easy to cause the disconnection of the TiN thin film wire, and the nN resistance is also equal to the instantaneous large static current, which is easy to burn. Bei;: 2 Contains gold material, this design can solve the manufacturing process of the surface package of all two genus, but it is not compatible with Shi Xiji; however, the material will cause; loss $. $ 路 制 程 巾 ’Because of gold European patent EP 1 2 5 6 8 9 9 discloses a tungsten rhenium tungsten metal deposition and the two metal mesh design in the subsequent etch-back step. However, many small holes are formed in the protective layer to create sensation = carbon cuts the damage of the sensor I: When the sensor is outside the surface, Qiutan will be made hydrophilic by the puppets of the small holes, so when the finger ’s The contact of moisture causes the surface of the protective layer to deteriorate the image quality. To this end, it is necessary that the surface will diffuse, and the continuous chemical mechanical polishing (CMP) process will deposit the oxygen θ and silicon silicon and then reach a flat outer surface. However, this kind of emulsified stone fills the aforementioned small holes and is not suitable for general commercial wafer generation: the manufacturing process is too complicated, and when the above-mentioned conventional technology is implemented, the second power = system f; sequence. The material of the protective layer (the above protective layer material, to avoid the residue of oil and sweat of the fingers when the wafer is sensed by the above-mentioned, to prevent the residual oil and sweat of the fingers, water, or lipophilic characteristics) can not form a residual image, affecting subsequent = refers to fingerprints remaining on the surface of the wafer You can even use this to attack the system to achieve

Page 10 200536096 V. Description of the invention (5) To the purpose of cracking. Therefore, how to provide a chip-type sensor capable of resisting static electricity and stress damage and preventing residue interference is a problem to be solved in this case. [Summary of the Invention] Therefore, an object of the present invention is to provide a chip-type fingerprint sensor, which can resist the damage of static electricity and stress, and can effectively prevent the interference of residues, thereby improving the sensing effect of the sensor and extending it. Service life. In order to achieve the above object, the present invention provides a wafer-type sensor capable of resisting static electricity, stress damage, and anti-fouling interference, which includes a substrate structure and a protective layer covering the substrate structure. The protective layer includes, in order from bottom to top: a first layer for providing a first stress to the substrate structure; a second layer for providing a second stress to the substrate structure; and a third layer, It is used to provide a third stress to the substrate structure, wherein the first stress and the third stress belong to one of a stress and a compressive stress, and the second stress belongs to the tensile stress and the compression The other of the two is to reduce residual stress. [Embodiment] The chip sensor of the present invention is described by taking a fingerprint sensor as an example. The type can be a capacitive fingerprint sensor, a temperature difference fingerprint sensor, a capacitive pressure fingerprint sensor, etc. However, the present invention is not limited to this. FIG. 1 shows a schematic diagram of reading a finger print using a capacitive fingerprint sensor of the present invention. As shown in Figure 1, this fingerprint sensor 2 is fabricated on a silicon substrate

200536096

V. Description of the invention (6) It is stated above that a wafer shape is formed, and a plurality of capacitive 4 ^ requirements / functions are arranged in a two-dimensional (2D) matrix. The surface cloth of the wafer is not shown; / A Its peripheral control processing circuit (in the picture (hereafter the sensing electrode includes people / types? Plural metal plate as the sensing electrode are collectively referred to as the substrate structure), and] the sensing and control processing circuit and Shi Xi substrate will be the product m A layer of dielectric material is formed on the outermost part of the wafer. When the finger is in contact with the dielectric material of the second dielectric and the protective layer exposed on the wafer, the peak (Ri ^ gem will interact with The regular shape pattern 2 leaves a shape corresponding to Xi: 嵝, valley-type sensing where the 20 touches, and the shape of the sensing capacitance curve ... = electricity =: line 11 & by reading electricity ^ it can be Identifies the shape of the original ripple peak 11.-Figure V is a partial side view of the first embodiment of the capacitive sensing unit of Figure 1 in Figure 1: Figure. "2, the capacitive fingerprint sensing of the present invention The device includes a silicon base, several (only one shown in the figure) sensing electrodes 22, and a protective layer of earth material 2 1. There is a corresponding one of each sensing electrode 2 2 A sensing circuit: ^ also includes a signal processing and control circuit 2 1 B around the sensing element array (shown in Figure 4) 'Detailed sensing element array and peripheral circuit settings I to refer to the inventor of the patent for another A patent application (1) Patent application of the Republic of China = case number 091106806, the application date is April 3, 2002, and the name of the invention is

"Electric Valley fingerprint reader chip", patent pending. The sensing electrode 2 2 is located on the Shixi substrate 21 and is electrically connected to the sensing circuit 2a. (From here on, the sensing electrode 2 2 includes the sensing circuit 2 1 A and the signal processing and control processing circuit 2 1 B. And the silicon substrate 21 will be collectively referred to as a substrate structure 2 9). The protective layer 26 covers the substrate structure 29. Therefore, in this embodiment, the substrate structure 29 includes a silicon substrate 2 j and a plurality of sensing electrodes 22. The silicon substrate 21 contains a plurality of sensing circuits 21 A

Page 12 200536096

And a # bluff processing and control circuit 2 1 β. A plurality of sensing electrodes 22 are formed on the silicon substrate 21 in an array arrangement, respectively corresponding to the sensing circuits 21A and electrically connected to the sensing circuits 21a. The protective layer 26 includes first to third layers 26 to 26 (: from the bottom to the top. The first layer 26A is used to provide a first stress to the substrate structure 29. The second layer 26B is used to the substrate The structure 29 provides a second stress. The third layer 2% is used to provide a third stress to the substrate structure 29.

^ In an example, the first stress and the third stress belong to the same stress, and the second stress belongs to a compressive stress. That is, the tensile stress provided by the first layer 26A and the third layer 26C is used to offset the compressive stress provided by the second layer 26β, so that the thermal residual stress of the protective layer 26 can be reduced. In this case, the first layer 2 6 A, and the first layer 2 6 G are composed of a single layer or a composite layer of nitride; ⑨, hafnium carbide, diamond-like carbon material and diamond material, and the second layer 26B Department of silicon dioxide, group _ into ^. The preferred combination of the first to third layers in this embodiment is nitrogen 1 / silicon monoxide / silicon nitride, which can be combined with a commercial integrated circuit manufacturing process to reduce manufacturing costs. At the same time, the thickness of the two layers of silicon nitride in this embodiment may be different to maintain a proper stress structure. In another example, the first stress and the third stress are both compressive stresses.

However, a stomach stress is a tensile stress. That is, the compressive stresses provided by the first layer 26A and the third layer ft are used to offset the tensile stress provided by the second layer 2 6β, so that the thermal residual stress of the two layers can be obtained. cut back. In this case, the second] 2 ^ B, / is composed of a single two or composite layer of nitrided silicon, silicon carbide, diamond-like carbon material or diamond material, and the first layer 2 6 Α and the third layer 26C is made of dioxide. The preferred combination of the first to third layers in this embodiment is two

Page 13 200536096 V. Description of the invention (8) ^ = silicon nitride / silicon dioxide, because it can be granulated with commercial integrated circuits, reducing manufacturing costs. At the same time, the thickness of the two-layer silicon dioxide in this embodiment may be different to maintain a proper stress structure. ^ With the sandwich structure of the protective layer of the present invention, the residual stress of the entire protective layer can be reduced, so the thickness of the protective layer can be increased, so that its mechanical strength (which is proportional to the cube of the thickness) and electrostatic protection ability ( Withstand the electric field strength is proportional to the square of the thickness) has a very good effect. In the embodiment of the present invention, the thickness of the protective layer is preferably 3 to 5 μm. For example, in a preferred embodiment of the present invention, the order is silicon dioxide 0 · 7 // m / silicon nitride 2 // m / dioxide Silicon 0 · 2 // m, which shows that the mechanical strength will be at least 3 times that of the conventional technology 1 ~ 2 // m. At the same time, compared with the thickness of the protective layer of the commercial integrated circuit manufacturing process is about 1 micron, the electrostatic field withstand of the embodiment of the present invention can be increased by at least 8 times. FIG. 3 is a schematic partial side view of the second embodiment of the capacitive sensing element of FIG. 1. FIG. As shown in FIG. 3, in addition to the sandwich structure described above, the protective layer 26 may further include a fourth layer Md, which is one of the molecular material layers, which is coated on the third layer 26C to provide a Fingers touch one of the water and oil repellent surfaces to prevent fingerprints from remaining on them. The polymer material layer 26D is composed of Teflon or Teflon-like chemical structural material. Alternatively, the molecular material layer 26D is formed by using a solution having a polymer monomer on the third layer 26C. The solution having a polymer monomer has a fluorocarbon polymer end and a silane group polarity. end. The fluorocarbon polymer end is exposed to the outside and has a soft segment that blocks the South molecular bond ’to protect a polar end of the Shi Xiyuan's base from the external interference’.

200536096 V. Description of the invention (9) Tooth mouth T is located on 2 6 C on the second floor of Haihe. In another embodiment, the fourth layer 2 6 D may be a ceramic atomic layer (ceramic at 0mic, for example, oxidation: and emulsified titanium ^ to form the same water and oil repellent surface (see the Republic of China patent The application number is 092124697, the application date is September 8, 2003, and the invention name is "Capacitive fingerprint sensor capable of preventing fingerprint residue and its processing method" and the Republic of China Patent Application No. 92 1 3 248 〇, date is November 20, 2003, and the invention name is "Surface treatment method of wafer device and wafer device formed by using this method").

In addition to the protective layer structure designed above by stress compensation, which can greatly increase the compressive strength and protection against electrostatic damage, in order to further increase the present ^, the electrostatic protection of the chip fingerprint sensor, please refer to Figure 4, which is static X electric protection = another embodiment. FIG. 4 is a schematic cross-sectional view of the capacitive fingerprint sensor of FIG. 3. As shown in FIG. 4, the capacitive fingerprint sensor 2 of the present invention basically includes a silicon substrate 2 containing a plurality of sensing circuits and a signal processing and control circuit. 1. A plurality of flat electrodes belonging to the sensing electrodes. 2 2. A metal net 2 3. A plurality of electrostatic discharge cells 2 4. A plurality of welding pads 25 and a protective layer 26. In this embodiment, the substrate structure 29 can be regarded as including a silicon substrate 21, a plate electrode 22, a metal mesh 23, an electrostatic discharge unit 24, and a bonding pad 25. The flat electrodes 2 2 are formed on the silicon substrate 2 1 in an array arrangement. The metal mesh 23 is formed between the flat electrodes 22 and is flush with the flat electrodes 22 and surrounds each of the flat electrodes 22. In detail, the metal meshes 2 3 are arranged vertically and horizontally in the gaps between the flat electrodes 22. Each of the plate electrodes 22 and the metal mesh 2 3 are separated by a predetermined distance. These pads 25 are used as the input and output parts of the Rong capacitive fingerprint sensor 2. The metal mesh 2 3 connections

Page 15 200536096 V. Description of the invention (10) To a ground terminal GND, the main purpose is to guide static electricity to the ground terminal GND to prevent the sensor from being damaged by static electricity. The electrostatic discharge cells 24 are connected to the metal net 23 and further connected to the ground terminal. The distance D between adjacent electrostatic discharge cells η is much larger than the distance between adjacent plate electrodes 22, so the number of these electrostatic discharge cells 24 is much smaller than the number of plate electrodes 22. The protective layer 26 is completely covered on the flat electrodes 22 and the metal mesh 23 'and is partially covered on the electrostatic discharge cells 24 and the solder pads 25. The non-protective layer 2 6 forms a plurality of first openings 27 on the electrostatic discharge cells 24 and a plurality of second openings 28 on the pads 25. It is worth noting that the size of each of the first openings 27 is much smaller than the size of each of the second openings 28. FIG. 5 is a schematic partial cross-sectional view of FIG. 4. FIG. 6 shows an enlarged schematic view of the bonding pad of FIG. 4. As shown in FIGS. 5 and 6, the aluminum metal stack 30 includes a titanium layer 51 on the substrate 21, an aluminum alloy layer 52 on the titanium layer 51, and a nitrogen layer on the side aluminum alloy layer 52.化 titanium layer 53. The aluminum alloy layer 52 is exposed through each of the first openings 27. Each bonding pad 25 includes a titanium layer 51 on the substrate 21, an aluminum alloy layer 52 on the titanium layer 51 and exposed through the second openings 28, and on the aluminum alloy layer 52 and surrounding each of the The second opening 28 is a titanium nitride layer 53. It is worth noting that due to the characteristics of the etching process, an intermediate thickness τ 丨 of the titanium nitride layer 53 in each of the first openings 27 is smaller than a peripheral thickness T2 of the titanium nitride layer 53. The titanium nitride layer 53 in each of the second openings 28 is substantially completely removed. + FIG. 7 shows a partial top view of the capacitive fingerprint sensor of FIG. 4. Follow the line 4-4 in Figure 7 to get the side view shown in Figure 4. From Figure 7 you can

Page 16 200536096 V. Description of the invention (11) It is clear that in order to make the electrostatic discharge unit 24, the present invention sacrifice the sensing area of some flat electrodes without affecting the sensing effect. Therefore, the flat electrodes 22 include a plurality of sacrificial electrodes 22S and a plurality of standard electrodes 22N. The sacrificial electrodes 22S are adjacent to the electrostatic discharge cells 24, and the size of each of the sacrificial electrodes 22S is smaller than that of each of the standard electrodes 22N. size. In this embodiment, each of the electrostatic discharge cells 24 is adjacent to only one sacrificial electrode 22S. Therefore, among the nine plate electrodes 22, there is only one sacrificial electrode 22S. The plate electrode 22 and the metal mesh 23 may be made of the same material. For example, the plate electrode 22 and the metal mesh 23 may be the topmost metal film in the integrated circuit granulation, such as an aluminum metal laminate 30 or a copper metal laminate. In this embodiment, the area of the flat electrode 22 is about 40 microns * 40 microns, the area of the capacitive sensing element 20 is 50 microns * 50 microns, and sensing is formed between the flat electrode 2 2 and the finger 1. Capacitors, and metal meshes 2 and 3 are used for electrostatic protection. When a finger approaches the sensor, static electricity can flow from the first opening 27 to the ground terminal GND through the metal net 23. In this embodiment, the optimized distance D between two adjacent electrostatic discharge cells 24 is 5,000 to 10,000 microns. Fig. 8 shows a plan view of a capacitive fingerprint sensor according to a third embodiment of the present invention. The sensor system of FIG. 8 is similar to FIG. 7 except that each of the electrostatic discharge units 24 of FIG. 8 is adjacent to only two sacrificial electrodes 22S. That is, two adjacent plate electrodes 22 of? Are sacrificed one area each for use by the electrostatic discharge unit 24. Fig. 9 shows an unintended plan view of a capacitive fingerprint sensor according to a fourth embodiment of the present invention. The sensor of FIG. 9 is similar to that of FIG. 7 except that each of the electrostatic discharge cells 24 of FIG. 9 is adjacent to only four sacrificial electrodes 22S. Also 200536096 V. Description of the invention (12) That is, each of the four adjacent plate electrodes 22 is sacrificed an area for the electrostatic discharge unit 24 to use. With the above configuration, the first opening 27 for the electrostatic discharge unit 24 and the second opening 28 for the pad 25 are designed in the same mask, but there is a considerable difference in size. For example, the size of the first opening 27 is usually 5 to 10 micrometers, and the size of the second opening 28 is usually 100 to 150 micrometers. Therefore, during the formation of the openings, not only the 4 layers 2 6 can be completely removed to form the second openings 2 8, but the uppermost titanium nitride layer 5 3 can also be finished and the aluminum alloy layer 5 2 can be removed. Fully exposed to facilitate subsequent wire-making actions ..., ^ This artist should easily understand that the ^ -etching methods used to form the openings all have a loading effect, that is, 2 clever: car: small Etching speed is slow. The present invention utilizes this feature- # 5 ^ ^^ -271 ^ Corrosion resistance: the penetration degree is about 0.1 micron) ° Since the nitride layer 53 is not easy to oxidize, it is suitable for long-term use and is suitable for exposure to the air. In this way, the static electricity near the object being sensed is connected to the metal alloy layer 52 through the first opening 27, the vaporized titanium layer 53, and the metal ground terminal used in the present invention to avoid electrostatic damage. The integrated circuit manufacturing process is used, and the manufacturing process is completely the same as that of any manufacturer who completes the inscription of the sensing electrode and the static S3 layer or the copper metal process. It is also incompatible with the manufacturing process. Can eliminate the above-mentioned conventional technology, the problem of incompatible materials. Known technology: It is not necessary to use the aforementioned processes and materials with high complexity to manufacture the standard flow of this integrated circuit factory

Page 18 200536096 V. Explanation of the invention (13) The advantages of the present invention are not only the ESD protection capability, but also the ESD protection can be completed by using only a few electrostatic discharge cells with a long distance. It is not connected to the metal mesh 23, which reduces the interference caused by many residual capacitors on the image. The specific embodiments proposed in the detailed description of the preferred embodiments are only used to facilitate the description of the technical content of the present invention, rather than to limit the present invention to the above embodiments in a narrow sense, without exceeding the spirit of the present invention and the following patent applications The scope of the scope and the various changes made are all within the scope of the present invention.

Page 19 200536096 Brief Description of Drawings Figure 1 shows a schematic diagram of reading fingerprints using a capacitive fingerprint sensor of the present invention. FIG. 2 is a schematic partial side view of the first embodiment of the capacitive sensing element of FIG. 1. FIG. FIG. 3 is a schematic partial side view of the second embodiment of the capacitive sensing element of FIG. 1. FIG. FIG. 4 is a schematic cross-sectional view of the capacitive fingerprint sensor of FIG. 3. FIG. 5 shows a partial cross-sectional view of FIG. 4. FIG. 6 shows an enlarged schematic view of the bonding pad of FIG. 4. FIG. 7 is a partial top view of the capacitive fingerprint sensor of FIG. 4. FIG. 8 shows a plan view of a capacitive fingerprint sensor according to a third embodiment of the present invention. FIG. 9 shows a plan view of a capacitive fingerprint sensor according to a fourth embodiment of the present invention. Description of Symbols of Components] T1 ~ Intermediate thickness GND ~ Ground terminal 1 ~ Finger 1 1 ~ Wave peak 2 0 ~ Capacitive sensing element 2 1 A ~ Sensing circuit 2 2 ~ Flat electrode (sensing electrode) 22S ~ Sacrificial electrode T2 ~ peripheral thickness D ~ pitch 2 ~ fingerprint sensor 1 1 a ~ capacitance curve 2 1 ~ silicon substrate 2 1 B ~ signal processing and control circuit 22N ~ standard electrode 2 3 ~ metal mesh

Page 20 200536096 Brief description of the drawings 2 5 ~ pad 26A ~ first layer 260 third layer 2 7 ~ first opening 2 9 ~ substrate structure 5 1 ~ titanium layer 24 ~ electrostatic discharge unit 2 6 ~ protective layer 26B ~ Second layer 2 6 D ~ Fourth layer 2 8 ~ Second opening 30 ~ Ming metal stack 5 2 ~ Ming alloy layer 5 3 ~ Titanium nitride layer

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Claims (1)

200536096 6. Scope of patent application 1. A wafer-type sensor capable of resisting static electricity, stress damage and anti-fouling interference, including: a substrate structure; and a protective layer covering the substrate structure, the protective layer is The above sequence includes: a first layer to provide a first stress to the substrate structure; a second layer to provide a second stress to the substrate structure; and a third layer to apply a first stress to the substrate structure; The substrate structure provides a third stress, wherein the first stress and the third stress belong to one of a sheet stress and a compressive stress, and the second stress belongs to both the tensile stress and the compressive stress. The other. 2. The chip-type sensor capable of resisting static electricity, stress damage and anti-fouling interference as described in item 1 of the scope of patent application, wherein the first layer and the third layer are composed of silicon dioxide, and the The second layer is composed of a single layer or a composite layer of silicon nitride, silicon carbide, diamond-like carbon material and diamond material. 3. The chip-type sensor capable of resisting static electricity, stress damage and anti-fouling interference as described in item 1 of the scope of patent application, wherein the second layer is composed of silicon dioxide, and the first layer and the The third layer is composed of a single layer or a composite layer of silicon nitride, silicon carbide, diamond-like carbon material and diamond material. 4. The chip-type sensor capable of resisting static electricity, stress damage and anti-fouling interference as described in item 1 of the scope of patent application, wherein the protective layer further comprises: a polymer material layer or a ceramic atomic layer, which is coated on The third layer is provided with a water-repellent and oil-repellent surface in contact with a finger, thereby preventing fingerprints from remaining thereon. Page 22, 200536096 6. Scope of patent application 5. As described in item 4 of the scope of patent application, a chip-type sensor capable of resisting static electricity and stress damage and preventing interference from interference, wherein the polymer material layer is made of Teflon (T ef 1 ◦ η) or Teflon-like chemical structural materials. 6. The chip-type sensor capable of resisting static electricity, stress damage, and anti-fouling interference as described in item 4 of the scope of patent application, wherein the polymer material layer is formed by using a solution having a polymer monomer On the third layer, the polymer monomer-containing solution has a fluorocarbon polymer end and a silane-based polar end, and the fluorocarbon polymer end is exposed to protect an integrated circuit from For external interference, the polar end of the silane group is used to firmly fix the polymer material layer on the third layer. 7. The chip-type sensor capable of resisting static electricity and stress damage and preventing interference from residues as described in item 6 of the scope of the patent application, wherein the fluorocarbon polymer end has a fluorocarbon polymer bond which is a soft segment. 8. The chip-type sensor capable of resisting static electricity, stress damage and anti-fouling interference as described in item 4 of the scope of patent application, wherein the ceramic atomic layer is a oxide layer or a titanium oxide layer. 9. The chip-type sensor capable of resisting static electricity, stress damage and anti-fouling interference as described in item 1 of the scope of patent application, wherein the thickness of the protective layer is greater than 2 microns. 10. The chip-type sensor capable of resisting static electricity, stress damage and anti-fouling interference as described in item 1 of the scope of patent application, wherein the thickness of the protective layer is 3 to 5 microns. 11. The chip-type sensor capable of resisting static electricity, stress damage and anti-fouling interference as described in item 1 of the scope of patent application, wherein the substrate structure includes: Page 23 200536096 VI. Patent application scope-a silicon substrate containing a plurality of sensing circuits; and a plurality of sensing electrodes formed on the silicon substrate in an array arrangement corresponding to the sensing circuits respectively And is electrically connected to the sensing circuits. 12. The chip-type sensor capable of resisting static electricity, stress damage, and anti-fouling interference as described in item 11 of the scope of the patent application, wherein the substrate structure further includes: a metal mesh running across the sensors horizontally and vertically. Between the measuring electrodes and flush with the sensing electrodes and surrounding each of the sensing electrodes, the metal mesh is connected to a ground terminal, and the protective layer is completely covered on the metal mesh. 13. The chip-type sensor capable of resisting static electricity, stress damage, and anti-fouling interference as described in item 12 of the scope of the patent application, wherein the substrate structure further includes: a plurality of electrostatic discharge cells connected to the metal mesh, And formed between a predetermined number of adjacent sensing electrodes among the sensing electrodes, the number of the electrostatic discharge cells is less than the number of the sensing electrodes, and the protective layer is partially covered by the electrostatic discharge cells on. 14. The chip-type sensor capable of resisting static electricity, stress damage and anti-fouling interference as described in item 13 of the scope of patent application, wherein the substrate structure further includes: a plurality of solder pads as the chip-type sensor For the input and output parts, the protective layer is partially covered on the pads, so that a plurality of first openings are formed on the electrostatic discharge cells, and a plurality of second openings are formed on the pads. The size of each of the first openings is smaller than the size of each of the second openings Page 24 200536096 6. Scope of patent application 15. As described in item 13 of the scope of patent application, the chip-type sensor can resist static and stress damage and prevent interference from interference, two of which are adjacent electrostatic discharge cells. The pitch is substantially between 500 and 100 microns. 16. The chip-type sensor capable of resisting static electricity, stress damage and anti-fouling interference as described in item 11 of the scope of patent application, wherein the sensing electrodes include a plurality of sacrificial electrodes and a plurality of standard electrodes, and The sacrificial electrodes are adjacent to the electrostatic discharge cells, and the size of each of the sacrificial electrodes is smaller than that of each of the standard electrodes. Page 25