TW200522383A - Active matrix type organic light emitting diode device and thin film transistor thereof - Google Patents

Abstract

An active matrix type organic light emitting diode device and a thin film transistor thereof are disclosed in the present invention. The driving thin film transistor for an active matrix type organic light emitting diode (AMOLED) device having first and second electrodes spaced apart from each other and an organic light emitting layer disposed between the first and second electrodes includes a gate electrode on a substrate, a semiconductor layer over the gate electrode, and source and drain electrodes on the semiconductor layer, wherein the source and drain electrodes are spaced apart from each other and respectively overlap portions of the gate electrode, and an overlapping area between the gate electrode and the source electrode is larger than an overlapping area between the gate electrode and the drain electrode.

Description

200522383 V. Description of the invention (1) [Technical field to which the invention belongs] The present invention relates to an organic light emitting diode (OLED), and particularly to an active matrix organic light emitting diode (active matrix). type organic light emitting diode (AMOLED) device and its thin film transistor. [Previous technology] Liquid crystal display devices (liquid crystal display devices, LCD devices) are widely used in the field of flat display devices due to their light weight and low energy consumption. However, the liquid crystal display device is not a light emitting element, but a light receiving element, which requires an additional light source to display an image. Therefore, there are some technical limitations in terms of improving brightness, contrast ratio, viewing angle, and expanding the size of the liquid crystal display panel. For these reasons, much research in this area has been devoted to active processes to develop new flat display elements that can overcome the aforementioned problems. Organic light emitting diode (OLED) devices are one of the new flat display elements. Since the organic light emitting diode arrangement can emit light without an additional light source, its viewing angle and contrast are better than those of a liquid crystal display device. In addition, since it does not need to be used as a backlight for the light source, it has advantages such as light weight, small size, and low energy consumption. Moreover, the organic light emitting diode device can be driven with a low direct current (DC) and has a fast response time. In contrast to liquid crystal display devices, organic light-emitting diode devices use solid materials instead of fluid materials.

200522383 V. Description of the invention (2) Crystal maggots. Therefore, under the external impact, the organic light-emitting diodes are more stablely assembled and have a wide operating temperature range. In particular, _ ^ 极 polar bodies have advantages in terms of low production costs. Specifically, different liquid crystal display devices or plasma display panels (PDPs) require many other equipment. The equipment for manufacturing organic light-emitting diodes is only t S deposition equipment and packaging, so it is organic. Setting is very easy. If this organic light-emitting diode device is mainly a ^ rectangular ^ type organic light-emitting diode (actlvematrix ... g.2, g.〇 心, AM〇LED) device, and has a thin film that can be used as each U switching element The transistor 'can make 丨: = two moons' luminance). Therefore, this organic light-emitting diode device has low power consumption, high resolving power (resoloutin), and large-scale ::. 凊With reference to Figure 1 ', the basic structure and operating characteristics of an active matrix organic light emitting diode device will be described below. = 1 Figure 5 shows the pixel structure of a typical active matrix organic light emitting diode device of the prior art. Take the first position of the brother, and the second position is perpendicular to the first position 2a. Find out that the trace line 1, the signal line 2 and the power supply line 3 cross each other to define the two-second prime area. The crystal 4 is connected to the adjacent part of the area where the private line 1 and the signal line 2 intersect. The capacitor storage 6 Λ is connected to the switching thin film transistor 4 and the power supply line 3. As a source element), the driving thin film transistor is 5 meters. >-Connected to capacitor storage 6 and power supply Line 3. In addition, electricity 200522383 V. Description of the invention (3) Electro-luminescent diode 7 is electrically connected to the driving thin-film transistor 5. Specifically, in an active matrix organic light-emitting diode device A day pixel has a switching thin film transistor 4 and a driving thin film transistor 5. Among them, the switching thin film transistor 4 is used to locate the pixel voltage, and the pixel voltage is the gate driving voltage (gate driving voltage). voltage), and the driving thin film transistor 5 is used to control the driving current of the active matrix organic light emitting diode device. In addition, the active matrix organic light emitting diode device needs a capacitor storage 6 to maintain the stability of the day voltage. _ FIG. 2A illustrates a plan view of a thin film transistor of a typical inverted staggered type active matrix organic light emitting diode device of the prior art. Referring to FIG. 2A, the gate electrode 12 is formed on In a certain orientation, the semiconductor layer M of the pattern pattern is formed and covered on the gate electrode 12. The source electrode 16 and the drain electrode 8 are formed on the semiconductor layer.丨 4 and the gate electrode 12 respectively are divided into two. The source electrode 16 is extended from the power supply line and formed in the same orientation of the gate electrode 12. Although it is not shown in the first drain electrode 1 8 It is electrically connected to the first electrode of the active matrix organic light-emitting diode (not shown), and the gate electrode 12 = membrane electricity; the body's drain electrode (not shown in the figure) = for electrical Connect the power supply line and maintain the stability of the pixel drive voltage for a period of time. In the prior art active matrix organic light emitting diode device, the gate

200522383 V. Description of the invention (4) The electrode 12 is partially overlapped with the source electrode 16, and the drain electrode 18 is partially overlapped, and a gap is maintained between the source electrode 16 and the drain electrode 18. . The first overlapping portion a between the gate electrode 12 and the source electrode 16 and the second overlapping portion b between the gate electrode 12 and the drain electrode 8 are symmetrical to each other with respect to the center line of the gate electrode 12. FIG. 2B illustrates a cross-sectional view taken along the section line IIB-I IB of FIG. 2A. Referring to FIG. 2B, the gate electrode 12 is formed on the substrate 10, and the gate insulating layer 13 is formed on the entire substrate 丨 0 on which the gate electrode 丨 2 has been formed. A semiconductor layer 14 is formed on the insulating layer 13 so as to cover the gate electrode 12. Then, the source electrode, the electrode 16 and the drain electrode 18 are formed on the semiconductor layer 14 and separated from each other. Parasitic capacitances (^ and parasitic capacitance C are generated in the first overlapping portion a and the second overlapping portion b, respectively. Parasitic electricity: the parasitic capacitance Cgd has the same capacitance value. In the prior art: In the polar device, the first overlapping portion and the second array overlapping portion b are minimized to reduce the parasitic capacitance Cgs and parasitic capacitance. In addition, the data voltage is controlled by a common voltage, and the parasitic capacitance will cause flicker due to the f-switching transistor. The "flicker" phenomenon and crosstalk (cr0ss_t l image quality.) Phenomenon However, the display is reduced. However, in the active matrix organic light-emitting diode, the gray current of the thin film transistor is controlled by driving the current flow of the thin film. It must be borrowed: Ξ ”ΐ: Good quality display images are important; important: in order to show great Fluctuates, but cannot be displayed well :: Yes

200522383 V. Description of the invention (5) = In the active matrix organic light-emitting diode device, the capacitor storage device plays an important role. Active matrix organic light-emitting diode device is an electric modulation (current modulat10n) element, the source electrode orientation and the drain electrode orientation of the day voltage are p 妯 — ^ 〇 ^ * The display device changes from positive to 2 ;: 2: Polarity reversion of the horseman pole as in the LCD 4 (and vice versa). Device ί :: "= The difference between the array organic light emitting diode device and the liquid crystal display device is similar to that of the gate electrode and the drain electrode formed in the overlapping area of the switching thin film electrode and the source electrode, which will contain the size of the memory. There is M: Yu said that due to two dollars of electricity, the value and extra electricity make the adjacent metal stagnation 4 ^ In the area of the valley storage, insulation may occur near the metal pattern: "Dagger [Inventive Content] ..., silly Resulting in the failure of the stoma. Therefore, the present invention provides a device to solve the side-by-side :, dynamic matrix type organic light-emitting diode loss. In the structure presented by the previous technology and the driving thin film of another meshed diode device of the present invention, an active matrix organic light emitting diode device is provided in the structure; = 啻 here Active-matrix organic light-emitting at gate electrode and drain electrode ^ # overlapping area of function electrode and source electrode The overlapping area of the large electrode is shaped as a domain, so that the closed electrode and the source "capacitance storage of its four properties of the present invention Device. Learn through examples. The 7 points of this article will be mentioned in the following, and the content, patent scope and drawings will be included ::]: and advantages will be available in the patent 200522383 V. Description of the invention (6) In order to achieve the purpose and advantages of the present invention, A brief description of the driving of an active matrix organic light emitting diode device includes a first electrode and a second body, the main first electrode and the second electrode are separated from each other, and the organic light emitting layer Between the electrode, the electrode and the second electrode, & the driving thin film transistor η ″-on the substrate; the semiconductor layer is on the gate electrode, the electrode is on the semiconductor layer, the middle source electrode is connected to the drain and the gate The electrode electrodes are partially overlapped, and # 刀 is separated from each other and the opening is larger than the overlapping area between the gate electrode and the drain electrode. The insulation layer is deposited between the gate electrode, the semiconducting electrode, and the source electrode. The overlapping area is closed: the clever layer is :, and the interlayer electrode is: and the semiconductor layer has an active layer and an ohmic contact layer: its shape is formed, and the ohmic contact layer is formed of a metamorphic amorphous stone. This: Have-exposed part live This is a thin-film active matrix organic light-emitting diode device. The first electrode and the second electrode are separated from each other. A vertical organic light-emitting layer is deposited on the first reticle. Contains: #First, between the nU electrode and the second electrode, the semiconductor layer is formed on the gate electrode:.: R: on the substrate; 'then, the electrode electrodes are partially overlapped: and =; =: the poles are separated from each other And it is respectively closed with the overlapping area between the gate electrode and the drain electrode. Zhanda Moyue also provides an active matrix organic light emitting diode device,

200522383 V. Description of the invention (7) Containing the gate electrode on the substrate; the gate insulating layer on the substrate including the gate electrode, the semiconductor layer on the gate insulating layer; the source electrode and the drain electrode on the semiconductor layer The source electrode and the drain electrode are separated from each other and divided into gate electrodes. The passivation layer is on the substrate and covers the source electrode and the drain electrode. The passivation layer has a drain contact hole to expose the drain electrode. The electrode is part T; the first electrode is on the passivation layer i; the first passivation layer is electrically connected to the drain electrode through the drain contact hole; the organic light-emitting layer is on the first electrode; the electrode is on the organic light-emitting layer; The area between the electrode electrode and the source electrode is larger than the overlapping area between the gate electrode and the drain electrode. The overlapping area between the ytterbium electrode and the source electrode forms a storage device for driving the electric valley. The active matrix organic light-emitting diode J = thin film transistor is electrically connected to the idler electrode. The active matrix organic light emitting device which uses the device as an upward light emitting type: a body M or an active matrix organic light emitting diode of a downward light emitting type. The present invention further provides an active moment manufacturing method, including forming a gate electrode layer. On a substrate including a free electrode; on a layer; then forming a source electrode and a drain electrode separated from the drain electrode and then forming a passivation layer on the substrate and the overlay layer having a drain contact hole to expose the electrode to passivation On the layer, the first passivation layer to the electrode and the electrode; and then forming the pole of the organic light emitting array organic light emitting diode device on the substrate; forming the gate insulation and forming a semiconductor layer on the gate insulating electrode on the semiconductor layer, wherein The source and the gate electrode partially overlap the source electrode and the drain electrode, respectively, and blunt the part of the drain electrode; forming a first through the drain contact hole to electrically connect the layer on the first electrode; and forming a first

200522383 V. Description of the invention (8) The manufacturing method of the two electrodes in the organic light-emitting layer is larger than the gate electrode, and the gate electrode and the capacitor storage device of the movable element include a shape electrode. And the active matrix organic light emitting diode of the active matrix is further enhanced in the specific embodiments. [Embodiment] Now, specific examples will be given as an aid. In the description, FIG. 3A illustrates the present array organic light emitting diode. In short, FIG. 3A illustrates the drain electrode. t, where the overlap between the gate electrode and the source and non-electrode electrodes. ] The overlap region between the source electrodes forms a. The active matrix organic light emitting diode is split, and the two switching thin film transistor is electrically connected to the gate type organic light emitting diode device, which is an upward light emitting light diode device or a downward light emitting device. Actions will be described in detail to provide a step-by-step description of the invention. The example f is used to describe the present invention in detail, and the numbers mentioned in the drawings refer to the numbers in the drawings. It is a plan view of a driving thin film transistor of a typical reverse staggered active moment device. The gate electrode, semiconductor layer, and source electrode are simplified. Referring to FIG. 3A, the gate electrode ι12 is formed in a certain orientation, and an island-shaped semiconductor layer 114 is formed on the gate electrode 112 and covers the gate electrode. 112. Then, the source electrode 116 and the drain electrode 118 are formed on the semi-conductor 丨 conductive layer 114 and separated from each other. The power supply line 120 and the gate electrode 112 are formed in the same orientation. The source electrode 6 is formed by extending the power supply line 20. Therefore, the gate electrode 丨 2, the semiconductor layer 丨 丨 4, the source electrode 11 16 and the drain electrode 1 1 8 form an active matrix organic light emitting diode device.

Page 15 200522383 V. Description of the invention (9)-The driving thin film transistor T is installed. Among them, an insulating layer (not shown in FIG. 3A) is deposited between the gate electrode 112 and the semiconductor layer Π4, and the gate electrode 112 is electrically connected to switch the drain electrode in the thin film transistor (not shown in the figure). . The non-electrode electrode 118 for driving the thin film transistor T is electrically connected to the first electrode of the active matrix organic light emitting diode device. The gate electrode 丨 2 and the source electrode 116 have a first overlapping portion a, and the gate electrode 丨 2 and the source electrode 118 have a second overlapping portion b. The distance d2 between the source electrode 116 and the drain electrode 118 corresponds to the distance dl in FIG. 2A. And the area of the first overlapping portion a is larger than the area of the second overlapping portion b. In the present invention, by increasing the width of the gate electrode 112, the area of the first overlapping portion a can be made larger than the area of the second overlapping portion b. FIG. 3B illustrates a cross-sectional view along the I I IB-I I IB section line of FIG. 3A. Referring to FIG. 3B, the gate electrode 112 is formed on the substrate 110, and the gate insulating layer 1 13 is formed on the entire substrate 1 10 where the gate electrode 1 12 has been formed. Then the 'semiconductor layer 1 1 4 is formed on the gate insulating layer 1 丨 3 and corresponds to the gate electrode 11 2. The source electrode 116 and the drain electrode 118 are formed on the semiconductor layer 11 4 and are separated from each other. The semiconductor layer 114 includes an active layer ii4a and an ohmic contact layer 114b. The active layer 114a is formed of amorphous silicon, and the ohmic contact layer 114b is formed of doped amorphous silicon. Then, by removing part of the source electrode ❿ 116 and part of the drain electrode 118, the ohmic contact layer 4b exposes part of the active layer 114a. The exposed portion of the active layer 114a is interposed between the source electrode 116 and the drain electrode 118, and forms a channel region ch. As described above, the distance d2 between the source electrode 116 and the drain electrode 118 corresponds to that in FIG. 28.

200522383 V. Description of the invention (10) 'a. The interval dl and the area of the first overlapping portion a is larger than the area of the second overlapping portion b. As shown in FIG. 3B, one end of the gate electrode 2 extends to the source electrode 116 to form a first overlapping portion a larger than the second overlapping portion b. In the present invention, by forming the first overlapping portion a to be larger than the second overlapping portion 13 ', a parasitic capacitance is generated between the gate electrode 11 2 and the source electrode 116, and is used as a capacitor storage Q. On the other hand, as in the prior art active matrix organic light emitting diode device, the parasitic capacitance L generated between the gate electrode 丨 2 and the drain electrode 118 is minimized. Therefore, if the first overlapping part a and the second overlapping part b have an asymmetric structure, the area occupied by the capacitor memory may be reduced, or an additional capacitor memory may be excluded. Therefore, the aperture ratio can be improved. In addition, the metal wire insulation (d i s c ο η n e c t i ο η) phenomenon in the capacitor storage region can be avoided. FIG. 4 illustrates a cross-sectional view of an active matrix organic light emitting diode device and a driving thin film transistor according to the present invention. Referring to FIG. 4, a gate electrode 212 is formed on a substrate 210, and a gate insulating layer 2 1 3 is formed on the entire substrate 2 1 0 where the gate electrode 2 1 2 has been formed, and covers the gate electrode 2 1 2 . Then, a semiconductor layer 2 1 4 is formed on the gate insulating layer 213 and corresponds to the gate electrode 212. Then, a source electrode 2 1 6 and a drain electrode 2 1 8 are formed on the semiconductor layer 2 1 4 and separated from each other. The gate electrode 1 electrode 2 1 2, the semiconductor layer 2 1 4, the source electrode 2 1 6 and the drain electrode 2 1 8 form a driving thin film transistor T. The first passivation layer 222 is formed on the entire substrate 2 1 0 where the driving thin-film transistor T has been formed, and a drain contact hole 2 2 0 is formed to pass through the first passivation layer 2 2 2. The drain contact hole 2 2 0 Can expose part of the drain

Page 17 200522383 V. Description of the invention (11) Pole 218. A first electrode 224 is formed on the first passivation layer 222 and is electrically connected to the drain electrode 218 through the drain contact hole 220. A second passivation layer 228 is formed on the entire substrate 21o where the first electrode 224 has been formed. Then, an opening portion 226 is formed to pass through the second passivation layer 228, and the opening portion 226 may expose a part of the first electrode 224. The organic light emitting layer 2 30 is formed on the second passivation layer 2 2 8 'and is electrically connected to the first electrode 224 through the opening portion 2 2 6 of the second passivation layer 2 2 8. A second electrode 232 is then formed on the organic light emitting layer 230

on. The first electrode 224, the second electrode 232, and the organic light emitting layer 230 form an organic light emitting diode (OLED). In the organic light emitting diode, the organic light emitting layer 23 is selectively emitted by the first electrode 224 or the second electrode 232. In the present invention, when the first electrode 224 is an iower electrode and the second electrode is an upper electrode

elejtrode), the first electrode 224 is formed of a transparent material, and the emitted light penetrates through the first electrode 224. Therefore, this active matrix organic light emitting diode device becomes a downward emitting active matrix organic light emitting diode On the other hand, when the second electrode 2 3 2 is formed of a transparent material so that the emitted light = transmits through the second electrode 232, the active matrix organic light emitting diode device becomes an upward emitting active matrix organic As described in 装, the light emitting diode mounting field has a first heavy portion a between the gate electrode 2 1 2 and the source electrode 2 1 6 than a second overlapping portion b between the gate electrode 212 and the drain electrode 218. $ Big. In the parasitic capacitance generated between the gate electrode 212 and the source electrode 2i6 and the parasitic capacitance generated between the gate electrode 212 and the source electrode 218,

Page 18, 200522383 V. Description of the invention (12) Generated between the gate electrode 21 2 and the source electrode 21 6 as a capacitor storage electrode for driving the day element. The parasitic capacitance of 6 and 2 is used for thin film transistors. The number is two, but one equals two = one—the amount of pixels can be changed, such as three or more. The number of thin film transistors of the present invention has the following advantages: The device can improve the quality of the displayed image. The capacitor storage capacity can be reduced by adding daylight, and the size of the device can be reduced or eliminated by eliminating additional electricity. Insulation phenomenon of additional capacitors and long metal wires = short-circuit has been added. It can be short-circuited in the π and electrical storage area. Although the best of the present invention is minimized. In order to limit the present invention, any disclosure is as above 4 ', but it is not useful: within the scope of God and God, when you can do something, without departing from the scope of protection of the present invention, the application of this specification should be considered. Therefore, the present invention The month of the patent patent encirclement shall prevail. Page 19 200522383 Brief description of the diagram. Figure 1 illustrates the daylight structure of a typical active matrix organic polar device of the prior art. Figure 2A illustrates a typical reverse-staggered active matrix organic light-emitting diode of the prior art. Plan view of a thin film transistor of a polar device; FIG. 2B illustrates a cross-sectional view taken along the II B-IIB section line of FIG. 2 A; FIG. 3A illustrates an active matrix of the inverted staggered type of the present invention Plan view of a driving thin film transistor of an organic light emitting diode device; cross-sectional view of an IB section line; and organic light emitting diode device of an organic light emitting diode device

Fig. 3B illustrates a cross-sectional view of I I IB-I I along Fig. 3A. Fig. 4 illustrates a cross-sectional view of an active matrix and driving thin film transistor of the present invention. [Illustration of Symbols] 2 3 4 5 6 7 10 12 13 14 16 Scanning line Signal line Power supply line Switching thin film transistor Driving thin film transistor Capacitor storage Electroluminescent diode substrate Gate electrode Gate Insulation layer semiconductor Layer source electrode

Page 20 200522383 Brief description of the drawing 18 Drain electrode 110 Substrate 112 Gate electrode 113 Gate insulation layer 114 Semiconductor layer 114a Active layer 114b Ohmic contact layer 116 Source electrode 118 Drain electrode 120 Power supply line 210 Substrate 212 Gate Electrode 213 Gate insulation layer 214 Semiconductor layer 216 Source electrode 218 Drain electrode 220 Drain contact hole 222 First purification layer 224 First electrode 226 Opening portion 228 Second passivation layer 230 Organic light-emitting layer 232 Second electrode dl Pitch #

Page 21 200522383 Schematic description of d2 Pitch a First overlapping part b Second overlapping part Cgs Parasitic capacitance Cgd Parasitic capacitance C st Capacitor storage T Drive film transistor ch Channel area I IB-I IB Profile II IB-I I IB section line

Page 22

Claims (1)

200522383 : A kind of driving thin film transistor for an active matrix type organic light emitting diode (OLED) device. The active matrix type organic light emitting diode device has a first electrode and a second electrode. The first electrode and the second electrode are separated from each other. An organic light emiUing layer is deposited between the first electrode and the second electrode. The driving thin film transistor includes a gate electrode on On a substrate; a semiconductor layer on the gate electrode; and a source electrode and a non-polar electrode on the semiconductor layer, wherein the · = electrode and the drain electrode are separated from each other and are respectively separated from the gate electrode The electrodes partially overlap, and the area of overlap between the gate electrode and the source electrode is larger than the area of overlap between the gate electrode and the drain electrode. 2. The driving thin film transistor as described in item 1 of the scope of patent application, It further includes an insulating layer, which is located between the gate electrode and the semiconductor layer. The driving thin film transistor described in item 1 of the Shenyan patent scope, wherein the gate The overlap region between the electrode and the source electrode forms a capacitor storage for driving daylight. 4. The driving thin film transistor as described in the first item of the patent application scope, wherein the semiconductor layer has an active layer and An ohmic contact layer. 5. The driving thin film transistor according to item 4 of the patent application, wherein the active layer is formed of amorphous silicon and the ohmic contact layer is formed of doped amorphous silicon. Page 23 200522383 6. Scope of patent application 6. The driving thin film transistor as described in item 4 of the scope of patent application, wherein the ohmic contact layer has a portion that can expose a part of the active layer. 7 · A method for manufacturing a thin film transistor for an active matrix organic light emitting diode device, the active matrix organic light emitting diode device has a first electrode and a second electrode, the first electrode and The second electrodes are separated from each other, and an organic light emitting layer is deposited between the first electrode and the second electrode. The manufacturing method includes: forming a gate electrode on a substrate; forming a semiconductor layer on the gate electrode And forming a source electrode and a drain electrode on the semiconductor layer, wherein the source electrode and the drain electrode are separated from each other and partially overlap with the gate electrode, respectively, and the gate electrode and the source The overlapping area between the electrode electrodes is larger than the overlapping area between the gate electrode and the drain electrode. 3. The manufacturing method of the driving thin film transistor described in item 7 of the scope of patent application, further comprising a step of forming an insulating layer on the gate electrode and the semiconductor. 9 rooms 9 · The method for manufacturing a thin film transistor according to item 7 of the scope of the patent application, wherein an overlapping region between the gate electrode and the source electrode is formed to drive a capacitor of daylight. = · The manufacturing method of the driving thin film transistor according to item 7 of the scope of the patent application ^ ′ wherein the semiconductor layer has an active layer and an ohmic contact layer. ^ · Manufacture of driving thin-film transistor as described in item 10 of Shenjing's patent scope. UI The active layer is formed of amorphous silicon, and the ohmic contact layer is formed of doped amorphous silicon. 9 1 糸 200522383 6. Scope of Patent Application 1 2 · The method for manufacturing a thin film driving transistor as described in Item 10 of the scope of patent application, wherein the ohmic contact layer has a portion that can expose part of the active layer. 1 3 · An active matrix organic light emitting diode device comprising a gate electrode on a substrate; a gate insulating layer on the substrate including the gate electrode; a semiconductor layer on the gate electrode On an insulating layer; a source electrode and a drain electrode on the semiconductor layer, wherein the source electrode and the sum electrode are separated from each other and partially overlap the gate electrode respectively; a passivation layer is on the substrate The source electrode and the drain electrode are covered, and the passivation layer has a drain contact hole (drain cone) to expose a part of the drain electrode; a first electrode on the passivation layer The first electrode is electrically connected to the drain electrode through the drain contact hole; an organic light emitting layer on the first electrode; and a second electrode on the organic light emitting layer, wherein the gate electrode and the The overlapping area between the source electrodes is larger than the overlapping area between the gate electrode and the drain electrode. 14. The active-matrix organic light-emitting diode device as described in item 13 of the scope of the patent application, wherein an overlapping area between the gate electrode and the source electrode is formed to drive a capacitive storage of daylight. ^ ^ 15. The active matrix organic light-emitting diode device described in item 13 of the scope of patent application, further comprising a switching thin-film transistor to electrically connect the x closed electrode-electricity Page 25, 200522383 VI. The scope of patent application is ° 1 6 · The active matrix type Gushi AT-8 organic light emitting diode device described in item 13 of the scope of patent application, wherein the active matrix type organic light emitting diode is # With the clothes line is an upward emitting type of active 4e land cut matrix organic smoke light diode device. 17 · The active matrix organic light-emitting diode device described in item 13 of the scope of the patent application, wherein the active matrix organic light-emitting diode device is a master-private red of the downward emitting type; Goosenler matrix organic light emitting diode device. 18 · An active matrix organic light emitting diode includes forming a gate electrode on a substrate, forming a gate insulation layer, and forming a semiconductor layer on the gate to form a source electrode and a drain electrode of the source electrode. The electrode and the drain electrode are separated from each other and respectively overlap with the electrodes; a passivation layer is formed on the substrate to cover the source electrode and the purification layer, and the purification layer has a non-polar contact hole to expose the second electrode to form A first electrode on the passivation layer, and the first non-polar contact hole is electrically connected to the electrode electrode; the $ electrode transmits an organic light emitting layer on the first electrode; and Page 26, 200522383 VI. Scope of patent application "A second electrode is formed on the organic light emitting layer, wherein the overlapping area between the gate electrode and the source electrode is larger than the overlapping area between the gate electrode and the drain electrode . \ 9 · The manufacturing method of active matrix organic light-emitting diodes and body garments as described in # 18 of the scope of patent application, wherein a μ overlapping area between the gate electrode and the source electrode is formed to drive the picture Prime capacitor storage. 20. The manufacturing method of the active moment formula as described in item 18 of the scope of the patent application, further comprising a switching thin-film electrical device and a physical device, and then connecting the gate electrode. Φ 1: ·: The manufacturing method of the active material type organic light emitting diode as described in item 18 of the patent application, wherein the active matrix organic light emitting diode is an upward emitting type ) 'S active moment 1 early type organic light emitting diode device. Please refer to the active matrix organic light-emitting diode described in item 18 of the patent, and the manufacturer of the placement *, wherein the active matrix organic light-emitting diode moment-down emitting type (d0WnWard emitting type) active denier P soap type Organic light emitting diode device.