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Application filed by Pt Plus LtdfiledCriticalPt Plus Ltd
Priority to TW92112019ApriorityCriticalpatent/TWI240817B/en
Publication of TW200519461ApublicationCriticalpatent/TW200519461A/en
Application grantedgrantedCritical
Publication of TWI240817BpublicationCriticalpatent/TWI240817B/en
The present invention relates to a structure and a fabrication method of a storage capacitor used in the pixel region of a display panel such as LCD or OELD. The present invention simultaneously forms a poly-crystalline silicon TFT and a storage capacitor in the pixel region of a display panel using MILC phenomena. By applying MILC inducing metal along at least two edges of storage capacitor, the time required to crystallize the silicon layer in storage capacitor region may be significantly reduced.
TW92112019A2003-05-012003-05-01A storage capacitor structure for LCD and OELD panels
TWI240817B
(en)
Method for manufacturing polycrystalline silicon layer, thin film transistor formed using same, method for manufacturing thereof and organic light emitting display device comprising same
Method and apparatus for manufacturing active-matrix organic el display, active-matrix organic el display, method for manufacturing liquid crystal array, liquid crystal array, method and apparatus for manufacturing color filter substrate, and color filter substrate