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Application filed by Grace Semiconductor Mfg CorpfiledCriticalGrace Semiconductor Mfg Corp
Priority to TW92130786ApriorityCriticalpatent/TWI242806B/en
Publication of TW200516657ApublicationCriticalpatent/TW200516657A/en
Application grantedgrantedCritical
Publication of TWI242806BpublicationCriticalpatent/TWI242806B/en
Photosensitive Polymer And Photoresist Processing
(AREA)
Drying Of Semiconductors
(AREA)
Abstract
The present invention provides a method for removing photoresist after etching of metal layer, which is to add a plasma etching process into the conventional dry and wet photoresist removing process, so as to rapidly remove the deposition and metal residual on the metal sidewall, and further reduce the required time for the consecutive wet removing process, and reduce the risk of generating micromask effect, and could be also applied in nano-scale process to obtain broader metal bridging short-circuit effect.
TW92130786A2003-11-042003-11-04Strip method of post etch metal layer
TWI242806B
(en)
Low surface tension, low viscosity, aqueous, acidic compositions containing fluoride and organic, polar solvents for removal of photoresist and organic and inorganic etch residues at room temperature