TW200514273A - High-efficiency nitride series light-emitting device - Google Patents

High-efficiency nitride series light-emitting device

Info

Publication number
TW200514273A
TW200514273A TW092128215A TW92128215A TW200514273A TW 200514273 A TW200514273 A TW 200514273A TW 092128215 A TW092128215 A TW 092128215A TW 92128215 A TW92128215 A TW 92128215A TW 200514273 A TW200514273 A TW 200514273A
Authority
TW
Taiwan
Prior art keywords
light
emitting device
series light
efficiency
nitride series
Prior art date
Application number
TW092128215A
Other languages
Chinese (zh)
Other versions
TWI234295B (en
Inventor
Chen Ou
Biao-Da Chen
xue-xian Wei
Yan-Ting Cai
Original Assignee
Epistar Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Epistar Corp filed Critical Epistar Corp
Priority to TW92128215A priority Critical patent/TWI234295B/en
Priority to DE200410019113 priority patent/DE102004019113A1/en
Priority to JP2004128550A priority patent/JP2005117006A/en
Publication of TW200514273A publication Critical patent/TW200514273A/en
Application granted granted Critical
Publication of TWI234295B publication Critical patent/TWI234295B/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H01L33/22—Roughened surfaces, e.g. at the interface between epitaxial layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
    • H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)

Abstract

The invention discloses a high-efficiency nitride series light-emitting device. There is provided a substrate formed thereon a first conductive nitride semiconductor stacked layer, wherein the surface of the first conductive nitride semiconductor stacked layer that is far away from the substrate includes an epitaxy area and a rough area. A nitride multiple-quantum well light-emitting layer is formed on the epitaxy area, and a second conductive nitride semiconductor stacked layer is formed on the nitride multiple-quantum well light-emitting layer, so as to increase the light-extracting efficiency of a light-emitting diode.
TW92128215A 2003-10-08 2003-10-08 High-efficiency nitride-based light-emitting device TWI234295B (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
TW92128215A TWI234295B (en) 2003-10-08 2003-10-08 High-efficiency nitride-based light-emitting device
DE200410019113 DE102004019113A1 (en) 2003-10-08 2004-04-20 Light emitting nitride arrangement used as an illuminating diode comprises a substrate, a first nitride semiconductor stack formed on the substrate, an emitting nitride layer and a second nitride semiconductor stack
JP2004128550A JP2005117006A (en) 2003-10-08 2004-04-23 Light-emitting device of nitride

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW92128215A TWI234295B (en) 2003-10-08 2003-10-08 High-efficiency nitride-based light-emitting device

Publications (2)

Publication Number Publication Date
TW200514273A true TW200514273A (en) 2005-04-16
TWI234295B TWI234295B (en) 2005-06-11

Family

ID=34465023

Family Applications (1)

Application Number Title Priority Date Filing Date
TW92128215A TWI234295B (en) 2003-10-08 2003-10-08 High-efficiency nitride-based light-emitting device

Country Status (3)

Country Link
JP (1) JP2005117006A (en)
DE (1) DE102004019113A1 (en)
TW (1) TWI234295B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8674375B2 (en) 2005-07-21 2014-03-18 Cree, Inc. Roughened high refractive index layer/LED for high light extraction

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7719020B2 (en) 2005-06-17 2010-05-18 The Regents Of The University Of California (Al,Ga,In)N and ZnO direct wafer bonded structure for optoelectronic applications, and its fabrication method
TW200637037A (en) 2005-02-18 2006-10-16 Sumitomo Chemical Co Semiconductor light-emitting element and fabrication method thereof
EP2005488B1 (en) 2005-12-16 2013-07-31 Samsung Display Co., Ltd. Optical device and method of fabricating the same
JP2007220865A (en) 2006-02-16 2007-08-30 Sumitomo Chemical Co Ltd Group iii nitride semiconductor light emitting device, and its manufacturing method
JP2007273746A (en) 2006-03-31 2007-10-18 Sumitomo Chemical Co Ltd Method of micromachining solid-state surface and light emitting element
JP2010512662A (en) 2006-12-11 2010-04-22 ザ リージェンツ オブ ザ ユニバーシティ オブ カリフォルニア Transparent light emitting diode
DE102007057756B4 (en) * 2007-11-30 2022-03-10 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Process for producing an optoelectronic semiconductor body
TWI399868B (en) * 2009-01-17 2013-06-21 Semi Photonics Co Ltd Methods for manufacturing light emitting diode having high reflective contact
CN102317236B (en) 2009-02-12 2014-04-09 电气化学工业株式会社 Substrate comprising aluminum/graphite composite, heat dissipation part comprising same, and LED luminescent member
KR20110134878A (en) 2009-02-13 2011-12-15 덴끼 가가꾸 고교 가부시키가이샤 Composite substrate for led light emitting element, method of production of same, and led light emitting element
CN102484188B (en) 2009-07-31 2015-02-18 电气化学工业株式会社 Led Equipment Purpose Wafer, Method For Manufacturing Same, And Led-equipped Structure Using Led Equipment Purpose Wafer
KR20140072876A (en) 2011-09-13 2014-06-13 덴끼 가가꾸 고교 가부시키가이샤 Clad material for led light-emitting element holding substrate, and method for manufacturing same

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8674375B2 (en) 2005-07-21 2014-03-18 Cree, Inc. Roughened high refractive index layer/LED for high light extraction

Also Published As

Publication number Publication date
DE102004019113A1 (en) 2005-05-19
JP2005117006A (en) 2005-04-28
TWI234295B (en) 2005-06-11

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Legal Events

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MK4A Expiration of patent term of an invention patent