TW200511505A - A power MOSFET structure and method thereof - Google Patents

A power MOSFET structure and method thereof

Info

Publication number
TW200511505A
TW200511505A TW092124139A TW92124139A TW200511505A TW 200511505 A TW200511505 A TW 200511505A TW 092124139 A TW092124139 A TW 092124139A TW 92124139 A TW92124139 A TW 92124139A TW 200511505 A TW200511505 A TW 200511505A
Authority
TW
Taiwan
Prior art keywords
gate electrode
power mosfet
mosfet structure
epi
present
Prior art date
Application number
TW092124139A
Other languages
Chinese (zh)
Other versions
TWI231571B (en
Inventor
Jau-Yan Lin
Original Assignee
Advanced Power Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Advanced Power Electronics Corp filed Critical Advanced Power Electronics Corp
Priority to TW92124139A priority Critical patent/TWI231571B/en
Publication of TW200511505A publication Critical patent/TW200511505A/en
Application granted granted Critical
Publication of TWI231571B publication Critical patent/TWI231571B/en

Links

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)

Abstract

The present invention provides a power MOSFET structure and method thereof. The power MOSFET structure of the present invention comprises a semiconductor substrate, an epi-layer located over the substrate, a gate electrode located over the epi-layer, two body regions respectively located on the two sides of the gate electrode and source regions located in the body regions, wherein a trench structure is formed in the gate electrode for filling the SiW metal to reduce the resistance of the gate electrode.
TW92124139A 2003-09-01 2003-09-01 A power MOSFET structure and method thereof TWI231571B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW92124139A TWI231571B (en) 2003-09-01 2003-09-01 A power MOSFET structure and method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW92124139A TWI231571B (en) 2003-09-01 2003-09-01 A power MOSFET structure and method thereof

Publications (2)

Publication Number Publication Date
TW200511505A true TW200511505A (en) 2005-03-16
TWI231571B TWI231571B (en) 2005-04-21

Family

ID=36121991

Family Applications (1)

Application Number Title Priority Date Filing Date
TW92124139A TWI231571B (en) 2003-09-01 2003-09-01 A power MOSFET structure and method thereof

Country Status (1)

Country Link
TW (1) TWI231571B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI647747B (en) * 2013-09-05 2019-01-11 恩智浦美國公司 A power field effect transistor, a power field effect transistor device and a method of manufacturing a power field effect transistor

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI647747B (en) * 2013-09-05 2019-01-11 恩智浦美國公司 A power field effect transistor, a power field effect transistor device and a method of manufacturing a power field effect transistor

Also Published As

Publication number Publication date
TWI231571B (en) 2005-04-21

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Legal Events

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MM4A Annulment or lapse of patent due to non-payment of fees