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Application filed by Advanced Power Electronics CorpfiledCriticalAdvanced Power Electronics Corp
Priority to TW92124139ApriorityCriticalpatent/TWI231571B/en
Publication of TW200511505ApublicationCriticalpatent/TW200511505A/en
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Publication of TWI231571BpublicationCriticalpatent/TWI231571B/en
Insulated Gate Type Field-Effect Transistor
(AREA)
Abstract
The present invention provides a power MOSFET structure and method thereof. The power MOSFET structure of the present invention comprises a semiconductor substrate, an epi-layer located over the substrate, a gate electrode located over the epi-layer, two body regions respectively located on the two sides of the gate electrode and source regions located in the body regions, wherein a trench structure is formed in the gate electrode for filling the SiW metal to reduce the resistance of the gate electrode.
TW92124139A2003-09-012003-09-01A power MOSFET structure and method thereof
TWI231571B
(en)