TW200511364A - Devices having horizontally-disposed nanofabric articles and methods of making the same - Google Patents

Devices having horizontally-disposed nanofabric articles and methods of making the same

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Publication number
TW200511364A
TW200511364A TW093103122A TW93103122A TW200511364A TW 200511364 A TW200511364 A TW 200511364A TW 093103122 A TW093103122 A TW 093103122A TW 93103122 A TW93103122 A TW 93103122A TW 200511364 A TW200511364 A TW 200511364A
Authority
TW
Taiwan
Prior art keywords
trace
nanotube
certain embodiments
under certain
patch
Prior art date
Application number
TW093103122A
Other languages
Chinese (zh)
Other versions
TWI323479B (en
Inventor
Venkatachalam C Jaiprakash
Jonathan W Ward
Thomas Rueckes
Brent M Segal
Original Assignee
Nantero Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nantero Inc filed Critical Nantero Inc
Publication of TW200511364A publication Critical patent/TW200511364A/en
Application granted granted Critical
Publication of TWI323479B publication Critical patent/TWI323479B/en

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  • Semiconductor Memories (AREA)
  • Carbon And Carbon Compounds (AREA)

Abstract

New devices having horizontally-disposed nanofabric articles and methods of making same are described. A discrete electro-mechanical device includes a structure having an electrically-conductive trace. A defined patch of nanotube fabric is disposed in spaced relation to the trace; and the defined patch of nanotube fabric is electromechanically deflectable between a first and second state. In the first state, the nanotube article is in spaced relation relative to the trace, and in the second state the nanotube article is in contact with the trace. A low resistance signal path is in electrical communication with the defined patch of nanofabric. Under certain embodiments, the structure includes a defined gap into which the electrically conductive trace is disposed. The defined gap has a defined width, and the defined patch of nanotube fabric spans the gap and has a longitudinal extent that is slightly longer than the defined width of the gap. Under certain embodiments, a clamp is disposed at each of two ends of the nanotube fabric segment and disposed over at least a portion of the nanotube fabric segment substantially at the edges defining the gap. Under certain embodiments, the clamp is made of electrically-conductive material. Under certain embodiments, the contact between the nanotube patch and the trace is a non-volatile state. Under certain embodiments, the contact between the nanotube patch and the trace is a volatile state. Under certain embodiments, the at least one electrically conductive trace has an interface material to alter the attractive force between the nanotube fabric segment and the electrically conductive trace.
TW93103122A 2003-02-12 2004-02-11 Devices having horizontally-disposed nanofabric articles and methods of making the same TWI323479B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US44678303P 2003-02-12 2003-02-12

Publications (2)

Publication Number Publication Date
TW200511364A true TW200511364A (en) 2005-03-16
TWI323479B TWI323479B (en) 2010-04-11

Family

ID=36167015

Family Applications (1)

Application Number Title Priority Date Filing Date
TW93103122A TWI323479B (en) 2003-02-12 2004-02-11 Devices having horizontally-disposed nanofabric articles and methods of making the same

Country Status (2)

Country Link
CN (2) CN101475134A (en)
TW (1) TWI323479B (en)

Cited By (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8080615B2 (en) 2007-06-19 2011-12-20 Micron Technology, Inc. Crosslinkable graft polymer non-preferentially wetted by polystyrene and polyethylene oxide
US8083953B2 (en) 2007-03-06 2011-12-27 Micron Technology, Inc. Registered structure formation via the application of directed thermal energy to diblock copolymer films
US8101261B2 (en) 2008-02-13 2012-01-24 Micron Technology, Inc. One-dimensional arrays of block copolymer cylinders and applications thereof
US8114301B2 (en) 2008-05-02 2012-02-14 Micron Technology, Inc. Graphoepitaxial self-assembly of arrays of downward facing half-cylinders
US8114300B2 (en) 2008-04-21 2012-02-14 Micron Technology, Inc. Multi-layer method for formation of registered arrays of cylindrical pores in polymer films
US8372295B2 (en) 2007-04-20 2013-02-12 Micron Technology, Inc. Extensions of self-assembled structures to increased dimensions via a “bootstrap” self-templating method
US8394483B2 (en) 2007-01-24 2013-03-12 Micron Technology, Inc. Two-dimensional arrays of holes with sub-lithographic diameters formed by block copolymer self-assembly
US8404124B2 (en) 2007-06-12 2013-03-26 Micron Technology, Inc. Alternating self-assembling morphologies of diblock copolymers controlled by variations in surfaces
US8450418B2 (en) 2010-08-20 2013-05-28 Micron Technology, Inc. Methods of forming block copolymers, and block copolymer compositions
US8551808B2 (en) 2007-06-21 2013-10-08 Micron Technology, Inc. Methods of patterning a substrate including multilayer antireflection coatings
US8557128B2 (en) 2007-03-22 2013-10-15 Micron Technology, Inc. Sub-10 nm line features via rapid graphoepitaxial self-assembly of amphiphilic monolayers
US8633112B2 (en) 2008-03-21 2014-01-21 Micron Technology, Inc. Thermal anneal of block copolymer films with top interface constrained to wet both blocks with equal preference
US8669645B2 (en) 2008-10-28 2014-03-11 Micron Technology, Inc. Semiconductor structures including polymer material permeated with metal oxide
US8900963B2 (en) 2011-11-02 2014-12-02 Micron Technology, Inc. Methods of forming semiconductor device structures, and related structures
US8956713B2 (en) 2007-04-18 2015-02-17 Micron Technology, Inc. Methods of forming a stamp and a stamp
US8999492B2 (en) 2008-02-05 2015-04-07 Micron Technology, Inc. Method to produce nanometer-sized features with directed assembly of block copolymers
US9682857B2 (en) 2008-03-21 2017-06-20 Micron Technology, Inc. Methods of improving long range order in self-assembly of block copolymer films with ionic liquids and materials produced therefrom
US10049874B2 (en) 2013-09-27 2018-08-14 Micron Technology, Inc. Self-assembled nanostructures including metal oxides and semiconductor structures comprised thereof

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR3002219B1 (en) * 2013-02-19 2015-04-10 Commissariat Energie Atomique METHOD FOR MANUFACTURING A MICROMECHANICAL AND / OR NANOMECHANICAL STRUCTURE COMPRISING A POROUS SURFACE
CN107634060B (en) * 2016-07-18 2020-04-10 中芯国际集成电路制造(北京)有限公司 Semiconductor device, manufacturing method thereof and electronic device

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6445006B1 (en) * 1995-12-20 2002-09-03 Advanced Technology Materials, Inc. Microelectronic and microelectromechanical devices comprising carbon nanotube components, and methods of making same

Cited By (33)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8394483B2 (en) 2007-01-24 2013-03-12 Micron Technology, Inc. Two-dimensional arrays of holes with sub-lithographic diameters formed by block copolymer self-assembly
US8512846B2 (en) 2007-01-24 2013-08-20 Micron Technology, Inc. Two-dimensional arrays of holes with sub-lithographic diameters formed by block copolymer self-assembly
US8083953B2 (en) 2007-03-06 2011-12-27 Micron Technology, Inc. Registered structure formation via the application of directed thermal energy to diblock copolymer films
US8753738B2 (en) 2007-03-06 2014-06-17 Micron Technology, Inc. Registered structure formation via the application of directed thermal energy to diblock copolymer films
US8409449B2 (en) 2007-03-06 2013-04-02 Micron Technology, Inc. Registered structure formation via the application of directed thermal energy to diblock copolymer films
US8801894B2 (en) 2007-03-22 2014-08-12 Micron Technology, Inc. Sub-10 NM line features via rapid graphoepitaxial self-assembly of amphiphilic monolayers
US8557128B2 (en) 2007-03-22 2013-10-15 Micron Technology, Inc. Sub-10 nm line features via rapid graphoepitaxial self-assembly of amphiphilic monolayers
US9768021B2 (en) 2007-04-18 2017-09-19 Micron Technology, Inc. Methods of forming semiconductor device structures including metal oxide structures
US8956713B2 (en) 2007-04-18 2015-02-17 Micron Technology, Inc. Methods of forming a stamp and a stamp
US8372295B2 (en) 2007-04-20 2013-02-12 Micron Technology, Inc. Extensions of self-assembled structures to increased dimensions via a “bootstrap” self-templating method
US8404124B2 (en) 2007-06-12 2013-03-26 Micron Technology, Inc. Alternating self-assembling morphologies of diblock copolymers controlled by variations in surfaces
US8445592B2 (en) 2007-06-19 2013-05-21 Micron Technology, Inc. Crosslinkable graft polymer non-preferentially wetted by polystyrene and polyethylene oxide
US8513359B2 (en) 2007-06-19 2013-08-20 Micron Technology, Inc. Crosslinkable graft polymer non preferentially wetted by polystyrene and polyethylene oxide
US8080615B2 (en) 2007-06-19 2011-12-20 Micron Technology, Inc. Crosslinkable graft polymer non-preferentially wetted by polystyrene and polyethylene oxide
US8551808B2 (en) 2007-06-21 2013-10-08 Micron Technology, Inc. Methods of patterning a substrate including multilayer antireflection coatings
US10005308B2 (en) 2008-02-05 2018-06-26 Micron Technology, Inc. Stamps and methods of forming a pattern on a substrate
US10828924B2 (en) 2008-02-05 2020-11-10 Micron Technology, Inc. Methods of forming a self-assembled block copolymer material
US8999492B2 (en) 2008-02-05 2015-04-07 Micron Technology, Inc. Method to produce nanometer-sized features with directed assembly of block copolymers
US11560009B2 (en) 2008-02-05 2023-01-24 Micron Technology, Inc. Stamps including a self-assembled block copolymer material, and related methods
US8101261B2 (en) 2008-02-13 2012-01-24 Micron Technology, Inc. One-dimensional arrays of block copolymer cylinders and applications thereof
US8633112B2 (en) 2008-03-21 2014-01-21 Micron Technology, Inc. Thermal anneal of block copolymer films with top interface constrained to wet both blocks with equal preference
US9315609B2 (en) 2008-03-21 2016-04-19 Micron Technology, Inc. Thermal anneal of block copolymer films with top interface constrained to wet both blocks with equal preference
US9682857B2 (en) 2008-03-21 2017-06-20 Micron Technology, Inc. Methods of improving long range order in self-assembly of block copolymer films with ionic liquids and materials produced therefrom
US10153200B2 (en) 2008-03-21 2018-12-11 Micron Technology, Inc. Methods of forming a nanostructured polymer material including block copolymer materials
US11282741B2 (en) 2008-03-21 2022-03-22 Micron Technology, Inc. Methods of forming a semiconductor device using block copolymer materials
US8455082B2 (en) 2008-04-21 2013-06-04 Micron Technology, Inc. Polymer materials for formation of registered arrays of cylindrical pores
US8114300B2 (en) 2008-04-21 2012-02-14 Micron Technology, Inc. Multi-layer method for formation of registered arrays of cylindrical pores in polymer films
US8114301B2 (en) 2008-05-02 2012-02-14 Micron Technology, Inc. Graphoepitaxial self-assembly of arrays of downward facing half-cylinders
US8669645B2 (en) 2008-10-28 2014-03-11 Micron Technology, Inc. Semiconductor structures including polymer material permeated with metal oxide
US8450418B2 (en) 2010-08-20 2013-05-28 Micron Technology, Inc. Methods of forming block copolymers, and block copolymer compositions
US8900963B2 (en) 2011-11-02 2014-12-02 Micron Technology, Inc. Methods of forming semiconductor device structures, and related structures
US10049874B2 (en) 2013-09-27 2018-08-14 Micron Technology, Inc. Self-assembled nanostructures including metal oxides and semiconductor structures comprised thereof
US11532477B2 (en) 2013-09-27 2022-12-20 Micron Technology, Inc. Self-assembled nanostructures including metal oxides and semiconductor structures comprised thereof

Also Published As

Publication number Publication date
CN101475134A (en) 2009-07-08
CN1748321A (en) 2006-03-15
TWI323479B (en) 2010-04-11
CN100456500C (en) 2009-01-28

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