TW200501318A - Method for forming contact opening having rounded corner and semiconductor structures utilizing the method - Google Patents

Method for forming contact opening having rounded corner and semiconductor structures utilizing the method

Info

Publication number
TW200501318A
TW200501318A TW092116630A TW92116630A TW200501318A TW 200501318 A TW200501318 A TW 200501318A TW 092116630 A TW092116630 A TW 092116630A TW 92116630 A TW92116630 A TW 92116630A TW 200501318 A TW200501318 A TW 200501318A
Authority
TW
Taiwan
Prior art keywords
contact opening
semiconductor structures
rounded corner
structures utilizing
forming contact
Prior art date
Application number
TW092116630A
Other languages
Chinese (zh)
Inventor
De-Chuan Liu
Jung-Kuei Lu
Sheng-Shing Hwu
Original Assignee
Macronix Int Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Macronix Int Co Ltd filed Critical Macronix Int Co Ltd
Priority to TW092116630A priority Critical patent/TW200501318A/en
Publication of TW200501318A publication Critical patent/TW200501318A/en

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Landscapes

  • Drying Of Semiconductors (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

A method for forming a contact opening having a rounded corner and semiconductor structures utilizing the method are described. In the method, a dielectric layer and a patterned photoresist layer are sequentially formed on a substrate. An isotropic etching process and a main etching process are performed to form a contact opening in the dielectric layer. A photoresist descum process is performed to remove a portion of the photoresist layer. Then, a soft etching process is performed to round the top corner of the contact opening. Because the top corner of the contact opening is rounded, a conductive material can be filled into the contact opening free of voids.
TW092116630A 2003-06-19 2003-06-19 Method for forming contact opening having rounded corner and semiconductor structures utilizing the method TW200501318A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW092116630A TW200501318A (en) 2003-06-19 2003-06-19 Method for forming contact opening having rounded corner and semiconductor structures utilizing the method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW092116630A TW200501318A (en) 2003-06-19 2003-06-19 Method for forming contact opening having rounded corner and semiconductor structures utilizing the method

Publications (1)

Publication Number Publication Date
TW200501318A true TW200501318A (en) 2005-01-01

Family

ID=57797997

Family Applications (1)

Application Number Title Priority Date Filing Date
TW092116630A TW200501318A (en) 2003-06-19 2003-06-19 Method for forming contact opening having rounded corner and semiconductor structures utilizing the method

Country Status (1)

Country Link
TW (1) TW200501318A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108983557A (en) * 2018-08-03 2018-12-11 德淮半导体有限公司 Lithography system and photolithography method

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108983557A (en) * 2018-08-03 2018-12-11 德淮半导体有限公司 Lithography system and photolithography method
CN108983557B (en) * 2018-08-03 2021-02-09 德淮半导体有限公司 Lithography system and lithography method

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