TW200501318A - Method for forming contact opening having rounded corner and semiconductor structures utilizing the method - Google Patents
Method for forming contact opening having rounded corner and semiconductor structures utilizing the methodInfo
- Publication number
- TW200501318A TW200501318A TW092116630A TW92116630A TW200501318A TW 200501318 A TW200501318 A TW 200501318A TW 092116630 A TW092116630 A TW 092116630A TW 92116630 A TW92116630 A TW 92116630A TW 200501318 A TW200501318 A TW 200501318A
- Authority
- TW
- Taiwan
- Prior art keywords
- contact opening
- semiconductor structures
- rounded corner
- structures utilizing
- forming contact
- Prior art date
Links
Landscapes
- Drying Of Semiconductors (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
A method for forming a contact opening having a rounded corner and semiconductor structures utilizing the method are described. In the method, a dielectric layer and a patterned photoresist layer are sequentially formed on a substrate. An isotropic etching process and a main etching process are performed to form a contact opening in the dielectric layer. A photoresist descum process is performed to remove a portion of the photoresist layer. Then, a soft etching process is performed to round the top corner of the contact opening. Because the top corner of the contact opening is rounded, a conductive material can be filled into the contact opening free of voids.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW092116630A TW200501318A (en) | 2003-06-19 | 2003-06-19 | Method for forming contact opening having rounded corner and semiconductor structures utilizing the method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW092116630A TW200501318A (en) | 2003-06-19 | 2003-06-19 | Method for forming contact opening having rounded corner and semiconductor structures utilizing the method |
Publications (1)
Publication Number | Publication Date |
---|---|
TW200501318A true TW200501318A (en) | 2005-01-01 |
Family
ID=57797997
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW092116630A TW200501318A (en) | 2003-06-19 | 2003-06-19 | Method for forming contact opening having rounded corner and semiconductor structures utilizing the method |
Country Status (1)
Country | Link |
---|---|
TW (1) | TW200501318A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN108983557A (en) * | 2018-08-03 | 2018-12-11 | 德淮半导体有限公司 | Lithography system and photolithography method |
-
2003
- 2003-06-19 TW TW092116630A patent/TW200501318A/en unknown
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN108983557A (en) * | 2018-08-03 | 2018-12-11 | 德淮半导体有限公司 | Lithography system and photolithography method |
CN108983557B (en) * | 2018-08-03 | 2021-02-09 | 德淮半导体有限公司 | Lithography system and lithography method |
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