TW200426937A - Method and system for etching a high-k dielectric material - Google Patents

Abstract

A method for heating a substrate between a first process and a second process using a plasma is described. The heating method comprises thermally isolating the substrate on the substrate holder by removing the backside supply of a heat transfer gas and removing the clamping force. Furthermore, an inert gas, such as a Noble gas, is introduced to the plasma processing system and a plasma is ignited. The substrate is exposed to the inert plasma for a period of time sufficient to elevate the temperature of the substrate from a first temperature (i.e., typically less than 100 DEG C) to a second temperature (i.e., typically of order 400 DEG C).

Description

I. [Invention belongs to the present invention relates to a method for heating a substrate. [Technical field] The method of heating the substrate is particularly related to the use of plasma plus two. [Previous technology] In the semiconductor industry, microelectronics is close to the deep sub-micron range, in order to meet the five-three-three-inch gradual processing device and digital East of the circuit. Because of the low-power, low-power, high-dielectric-constant materials (here also; 1 "two gold f: conductor technology replaces Si〇2 and silicon oxynitride (SiN〇) 'g," materials ) For the sake of rapid generation of doping, the main challenges of process development and anodic material stacking materials and petrochemical processing: the 4th system is for the new closed-electrode reactor dielectric materials with a dielectric constant greater than = high dielectric constant In addition, high dielectric constant materials can be special :: Ji Chang 丨 electric materials may be incorporated into metal work (such as Ta205 (k ~ 26), Ti〇2 (k ~ 80) Glue or

Al2O3 (k ~ 9), HfSi0, Hf02 (k ~ 25))). 22) During the manufacturing process, we must carve and remove the high-dielectric constant body device to carry out the source A electrode region and reduce the risk of entering the source / drain region during the metal core's entry. [Abstract] The present invention relates to a method for heating a substrate, and more particularly

Page 6 200426937 V. Description of the invention (2) Method of thermal substrate. Described below is a method for heating a substrate on a substrate support in a plasma processing system. The method includes introducing an inert gas to the plasma processing system. The inert gas includes He, Ar, Xe, and Kr. At least one of them, igniting a plasma from the processing gas; and exposing the substrate to the plasma for a period of time sufficient to raise the temperature of the substrate to above 20 ° C. Described below is a method for heating a substrate on a substrate support in a plasma processing system. Another method 'the method includes: etching a first layer on the substrate at a first temperature' and heating the substrate on the substrate support. In order to raise the temperature of the substrate from the / jnL degree & to a second temperature, the heating includes introducing an inert gas to the electropolymerization processing system, the inert gas including He, Xe, and ^^^ First, igniting a plasma from the processing gas; and exposing the substrate to the plasma for a period of time sufficient to raise the temperature of the substrate above the second temperature; and etching the first substrate on the substrate at the second temperature. Two-layer 0-four [Embodiment] In the material processing method, the high-k dielectric layer, which is widely used for gate stacking, has required a more complicated process to etch such materials. Among them, the traditional gate stack dry plasma etching uses a set temperature of the substrate support. In a process strategy that includes multiple process steps, this set temperature is maintained constant at all steps. Generally, since the substrate support temperature is set by a heat exchanger, and the heat exchanger itself has a large thermal inertia, it is not appropriate to change the temperature of the heat exchanger between process steps.

Page 7 200426937 V. Description of the invention (3)-a " ^ However, for advanced gate stack etching, it is increasingly necessary to have different substrate temperatures between different process steps in a process strategy. For example ... Doping is included. In a poly / TaN / Hf〇2 / Si stack, the doped-poly and TaN layer can be engraved at 80 ° C. '80 ° c is the set point temperature of the substrate support. However, firstly, the selective etching of Hf〇2 on Si may require a temperature much higher than 50 ° C. Secondly, the introduction of a Hf〇2 gate dielectric layer allows dry plasma etching without attacking the underlying Plasma chemistry of the source of exposure / sufficiently large parameter space is extremely important. A plasma processing system according to an embodiment is shown in FIG. I. The bean includes a plasma, coupled with the plasma processing chamber_hezhi—the dialogue system, and coupled with the dialogue system 12 and the plasma processing chamber 10. -Controller 14, the controller 14 is used to execute a process strategy including one or more process steps :::: as above: engraved with a gate stack; in addition, it can be used to receive at least from the dialogue system 12 An endpoint signal, and pre-processing the at least one signal in order to accurately determine the endpoint of the process. In the listed embodiments, the plasma processing system M shown in 1 utilizes electro-'material processing. The plasma processing system 1 may include an additional chamber. According to the embodiment shown in FIG. 2, the lightning treatment chamber 10 and the substrate support 20 with the electric / standby processing system attached thereto may include an electric vacuum pumping system 30. An example of the substrate 25 may be-a soil plate 25 of a car and / or a liquid crystal display; for example, an electric body substrate, a processing area 15 near the surface of the circle 25 may be configured to generate electricity; to 10 to facilitate the (Not shown) will be-ionizable gas; gas port;-gas injection is the pressure of the process ☆, for example, we can use He 4 to not introduce and adjust the L system (not shown) to save

200426937

An air valve inhibits the vacuum pumping system 30; a plasma can be used to produce a material specifically for a predetermined material processing and / or to help remove the material from the exposed surface of the substrate 25. The plasma processing system 1a can be used to process substrates of 200 mm, 300 mm or larger. For example, the substrate 25 may be attached to the substrate support 20 through an electrostatic clamping system 26; further, the substrate support 20 may further include a cooling system containing a recirculated coolant flow, the recirculated coolant The flow system receives heat from the substrate support 20 and transfers the heat to a heat exchanger system (not shown), or sends heat out of the heat exchanger system when heating; in addition, a heat transfer gas can be passed through a The side gas distribution system 27 is sent to the back side of the substrate 25 to raise the thermal conductivity of the gas gap between the substrate 25 and the substrate support 20. This system can be used when we want to increase or decrease the temperature of the substrate. For example, the far-negative-side gas dispersion system 27 may include a two- or three-zone (or: general multi-zone) gas distribution system, in which the back-side gas (gap) pressure may be independently between the center and the edge of the substrate 25 Variety. In the remaining embodiments, 'heating / cooling elements such as anti-heating elements, or electric heaters / coolers may be included in the substrate support 20 and the walls of the plasma processing chamber 10 and any other plasma processing system 1 a within the components. In the embodiment shown in FIG. 2, the substrate support may include an electrode, and RF power is coupled to the processing plasma in the process space i 5 through the electrode. For example, the substrate support 20 may be RF generator 40. The emitted RF power passes through an impedance matching network 50 to the substrate support 20 and is electrically biased to a voltage. The bias can be used as a hot electron to form and maintain a plasma. In this configuration, the system can be used as a reactive ion etching (r IE) reactor, where the chamber and a

200426937

The terminal gas injection electrode system is distributed as a ground plane around 0.1 MHz to 100 MHz, which is well known to those skilled in the art. The RF system used for the typical frequency range of RF bias and for plasma processing should be another way to apply RF power to the substrate support electrodes at multiple frequencies; further, the impedance matching network 50 may The power reflection is reduced to accelerate the transmission of the power to the plasma in the plasma processing chamber 10. Matching network technologies (such as [, P, T, etc.) and automatic control methods should be familiar to those skilled in this technology

For example, the vacuum pumping system 30 can include an accelerated molecular vacuum pump (TMp) that can provide a pumping rate of up to 5000 liters (or south) per second, and a gate valve that suppresses the pressure to the sea. In conventional plasma processing equipment for plasma etching, TMP of 1000 to 300,000 liters per second is usually used, for example, a low processing typically less than 50 mT0rr can be used "1>; for high-pressure processing (that is, greater than, 100 One mT0rr) can use a mechanical booster pump. In addition, a device for monitoring the room pressure (not shown) can be coupled to the plasma processing chamber i 0. For example, the pressure measurement device can be MKS Instruments Corporation (located in the United States) Bairatron Model 628B Absolute Capacitance Pressure Gauge manufactured by Andover, Mass.

The controller 14 includes a microprocessor, a memory, and a digital 1/0 崞 that can generate an input sufficient to contact and start the plasma processing system 丨 a and monitor the control voltage output from the plasma processing system la; furthermore, The controller 14 can generate with rf, impedance matching network 50, gas injection system (not shown), true == rolling system 30, backside gas distribution system 27, substrate / substrate support temperature, f measurement system (not shown) ), And / or electrostatic clamping system 26, etc. Example: A program stored in the memory can be used for root

Page 10 200426937 V. Description of the invention (6) The component output to the aforementioned plasma processing system 1a is activated according to a manufacturing strategy to perform a method of etching a gate stack including a high dielectric constant dielectric layer. An example of the controller 14 is a Dell Precision Workstation (6i0tm) manufactured by Dell Corporation (D e 11 Corporat) in Austin, Texas. The dialogue system 12 may include an optical dialogue subsystem (not shown). The optical dialogue subsystem 2 may include a detector for measuring the intensity of light emitted by the plasma, such as (Shi Xi) Photoelectricity 2 A polar body or a photomultiplier tube (PMT); the optical dialogue subsystem 2 may further include a filter such as a narrow-band interference filter. In another embodiment, the dialogue system 12 may include at least a linear CCD (Charge Coupled Device), a CID (Charge Injection Device) array, and a light dispersion device such as a grating or chirp. In addition, the dialogue system 12 may include a monochromator (such as a grating / detector system) for measuring light of a known wavelength, and a spectrometer (such as a rotary grating) for measuring spectrum, such as US Patent No. 5 The device described in, 888, 337 is an example. The dialog system 12 may include a high-resolution optical emission spectroscopy (0ES) sensor such as a peak sensor systems or a product produced by Verity Instruments, Inc. This 0ES sensor has a broad spectrum spanning the ultraviolet (order), visible (VIS), and near-infrared (NIR) light spectrum, and its resolution is about 丨 · 4 A, which means that the sensor can be collected from 2 A total of 5 550 wavelengths from 40 to 100 nm, for example ... The sensor can be equipped with a UV-v IS-NIR spectrometer with a micro-sensitivity micro fiber, which is sequentially integrated by a 2048 pixel linear CCD array . ’The spectrometer receives light transmitted through a single and bundled fiber.

200426937 V. Description of Invention (7) " The light output by the optical fiber is dispersed across the linear CCD array using a fixed grating; similar to the above configuration, the light emitted through an optical vacuum window passes through a spherical convex lens and Focus on the input end of the optical fiber, and the three spectrometers specially adjusted for the known spectral range each form a sensor for a process chamber; finally, depending on the use of the sensor, it can be adjusted from 0 to 1 Record the next complete emission spectrum in seconds. In the embodiment shown in FIG. 3, the plasma processing system 丨 b may be similar to the embodiment shown in FIG. 1 or 2. In addition to the components described with reference to FIG. 1 and FIG. 2, it also includes a stationary or mechanical Type or electric rotating magnetic field system 丨 〇〇, in order to greatly increase the density of the plasma and / or improve the uniformity of the plasma processing; Moreover, the controller = 4 can be coupled with the magnetic field system 60 to adjust the speed and magnetic field strength. Those skilled in this technology should be familiar with the design and installation of rotating magnetic fields. In the embodiment shown in FIG. 4, the plasma processing system 丨 c may be similar to the embodiments shown in FIGS. 1 and 2, and may further include an upper electrode 70, in which “the RF power emitted by the generator 72 may be Consumed with the upper electrode 70 through the impedance matching network 74. A typical frequency used by applying rf power to the upper electrode may be in the range of 0.1 MHz to 20 MHz. In addition, power is applied to the lower electrode. A typical frequency used by the electrode may be in the range of 0.001 MHz to 100 mHz. Furthermore, the control module 14 must be coupled to the RF generator 72 and the impedance matching network 74 to apply RF power. Control is performed on the upper electrode 70. Those skilled in the art should be familiar with the design and installation of the upper electrode. In the embodiment shown in 5, the plasma processing system 丨 d can be as shown in Figure and ^ The embodiment is similar, and may further include an induction coil 80. The RF power is transmitted to the induction coil through the RF generator 82 and the impedance matching network 84.

Page 12 200426937 V. Description of the invention (8)-80 phase coupling, RF power passes through the TV window (not shown) from the induction coil 80 and faces the plasma processing area 15 and is applied to the induction with rf power A typical frequency used by the coil 80 may be in the range of 10 MHz to 100 mHz; similarly, a typical frequency used in applying power to the chuck electrode may be in the range of 0 j MHz to 100 MHz. In addition, I can use a slotted Faraday shield (not shown) to reduce the coupling between the induction coil 80 and the plasma; further, the 'controller 14 must be lightly coupled with the RF generator 82 and the impedance matching network 84 In order to control the RF power applied to the induction coil 80. In another embodiment, the induction coil 80 may be a "spiral" coil or a "disc-shaped" coil in contact with the plasma processing region 15 described above, as in a converter coupled electric paddle reactor (TCP). Those skilled in this technology should be familiar with the design and installation of inductive coupling plasma (ICP) sources or converter coupled plasma (TCP) sources. Alternatively, the plasma may be formed by electron cyclotron resonance (ECR); there is still another embodiment, the plasma is formed by emitting a spiral wave; and in another embodiment, the plasma is formed by a transmission surface Wave formation; those skilled in the art should be familiar with the above plasma sources. In the following discussion, a method of etching a gate stack including a high-k dielectric layer using a plasma processing apparatus will be described. For example, the electric processing apparatus may include various components and combinations thereof as described in FIGS. 1 to 5. An exemplary embodiment of a typical gate stack may include polysilicon / Hf02 / Si〇2 / Si with a TEOS hard mask, the silicon layer (Si) is used as the source / drain, and the Si 02 dielectric layer Contains a thin (~ 5 A) interfacial oxide that may be involved in enhancing channel mobility in the meantime, however this will partially sacrifice the overall gate-dielectric constant value. Table 1 shows the etching through the polysilicon layer and the Hf02 layer and stopping at the Si 02 layer

Page 13

200426937 V. Invention Description (9) One of the demonstration process strategies. Table 1 Step RF bottom RF RF ESC-T Pitch ESC-Volt ESC-He Step kick: time BT X 7 sor z P q 1500 V 3/3 r 10 s ME 8〇r Sun Yi 1500 V 3 / 3 U gauge i OE dirty 80TC clear m 1500 V 10Λ0 m 50 s PPH 2kW 900 W 801c 80 mm 2〇〇2000 2000 He 0 V 0/0 2000/1000 30 s DE 250 W 20W sot 80 mm 5 Shot: 100¾¾ into 80HBr + 20 C2H4 * 30 HBr + 50㉔this 0 V 0/0 850Λ50 cold printing 0W OW 80TC SO mm 200 minus 2000 He 1500 V 10Λ0 0/0 30 s For example, in Table 1, the BT table breaks through the original 3 丨 02 layer of the first process step; ME table contains the second process step of the main polysilicon etching step; 0E table over-etching process step; PPH table plasma preheating process step; DE table dielectric (H f 02) The remaining process steps; cooling means the substrate cooling process steps. The examples listed in Table 1 use the plasma processing system described in FIG. 4, where the RF power at the top electrode of the top RF table, and X, XX, and XXX respectively represent the breakthrough step, main step, and transition of the original oxide. The conventional value of the RF power of the top electrode is transmitted during the etching step; the bottom RF represents the RF power of the lower (substrate support) electrode, and y, yy, and yyy represent the original oxide breakthrough step, the main step, and the overetching step, respectively. The conventional value of the RF power of the bottom electrode is transmitted during the period; ESC-T indicates the substrate support temperature; the gap indicates the separation distance between the upper electrode and the lower electrode, where z, zz, and zzz respectively represent the breakthrough step in the original oxide , The main steps, and the conventional distance between the top (upper) electrode and the bottom (lower) electrode during the overetching step; P represents the temperature of the processing chamber, where p,

Page 14 200426937 V. Description of the Invention (PP) PP and PPP respectively represent the treatment between the top (upper) electrode ... and the bottom (lower) electrode during the original oxide breakthrough step, the main step, and the overetch step. Conventional value of chamber pressure; ESC-volt represents the electrode clamping voltage applied to the substrate support; ESC-He represents the He pressure (Torr) at the center / edge of the back side of the substrate; VPP represents the upper end at the set rF power / Typical peak-to-peak voltage generated on the lower electrode, where r, rr, and rrr represent the conventional peak-to-peak voltage on the bottom (lower) electrode during the original oxide breakthrough step, the main step, and the overetching step, respectively ; Epd represents the endpoint detection time. The rest of the configuration of the plasma processing system may have some parameter settings. The flow rate (q) listed in this DE step is only an example of a condition that reflects a high flow rate (that is, a low residence time), where q, qq, and qqq represent the original oxygen, material breakthrough step, main step, and overetch step respectively. The conventional value of the process gas flow rate. The listed gases can be used to explain the strategy of achieving selective Hf02 / Si etching. Those skilled in polysilicon etching should understand the βτ, ME and 0E process steps and their typical process parameters. During the cooling step, I removed the RF power to stop the plasma processing, and the substrate was cold enough to reduce the substrate temperature to the substrate support through electrostatic clamping (ESC) and backside (helium) heat transfer gas. Of temperature. 0 ° C. During the plasma preheating (PPH), the temperature of the substrate has been raised from a temperature suitable for etching polysilicon (such as 80. (:) to a temperature more suitable for selective etching by M% Λ ± 40 ° c). When the substrate is only leaning against the substrate support (that is, it is not held (by ESC) and there is no backside gas), the substrate is substantially insulated from the substrate support ^ the surrounding processing chamber is insulated, as shown in Figure 6 Means when the substrate is leaning against

Page 15 200426937 V. Description of the invention (Π) When a substrate with a lower temperature is on the top of the substrate, the substrate temperature responds to three different conditions. 'If the substrate is not clamped with the substrate support and therefore it is not subjected to the back side The influence of gas pressure will slow the temperature of the substrate over time (the solid line 100 shown in Figure 6); on the other hand, if the substrate is clamped to the substrate support but it is not subjected to backside gas pressure It can be observed that the temperature change rate of the substrate slightly increases with time (long dashed line ^ 10 2 shown in Fig. 6). Furthermore, if the substrate is clamped with the substrate support and is affected by the backside gas pressure Then, the temperature of the substrate drops rapidly at first, and then gradually approaches the temperature of the substrate support (short dashed line 104 shown in FIG. 6). Plasma preheating (PPH) of the substrate occurs when the substrate is adiabatic (ie: clamping force and backside gas pressure); usually, ion impact and convective heat_ both affect the heating of the substrate, while electrons (Including thermal and impact mustards also have a slightly weaker effect on the heating process than the previous two. In highly ionized coupled 埶 Γ ^ ί inductively coupled plasma (ICP), wave heating, etc.), the impact of ion impact heating Can override convection heat-neutral. In ion polymerization (ccp), the effect of convective heat-neutral can be equal to heat; in some cases, convective heat-neutral is dominant-inert oxygen: in the example, the plasma preheating process includes: Introduce krypton base force Kr, xe: Ignition electropolymerization from the inert gas; pressure, inertness, RF power of the lower electrode, inert gas chamber ratio = velocity, and change in atomic weight of the inert gas to the substrate heating end electrode = f It can be seen that: U) The heating power increases with the transmission of the lower force rate (line 11 ()) (b) The heating power increases with inertia 200426937 V. Description of the invention (12) The gas pressure increases slightly with the gas pressure And slightly male ^ / line 114) (C) heating power with increasing inert gas atomic weight and the domain = Π line 11 2) (d) heating power with inertia) (line 11 6). Reduced ^ (that is, using helium is more effective than using argon. Dielectric Figure 2: Part 2: Plasma Preheating (ppH) Method for Selecting the Gate Dielectric Resin. Most devices include 20 to 50a.) H is typically extremely short at a specific PPH system% (for example, about 5 seconds to reach the desired t 4 peak substrate temperature is related to the PPH time, including # | lower than PPH, making 轾. Typically, the Hf 〇2 Etching plasma packs are excellent in the physical phase / 1, so it will greatly reduce the heating rate of the substrate. The value of dimensional value: ΐ ϊ The temperature is almost in the Hf 〇2 money engraving period (period 122). The value of the cold part occurs during the period of 1 2 4. In terms of selectivity, we have already known that the rate of the button 2 is reduced; usually, the pure halogen (Bγ2 or ( ： 12) Qin Yiyi, Shi & Cong Heng, HBr, C2H4BrJ, both carbon (C) and hydrogen (H). Father = insect = agent, Xibu, (CH2) n polymer containing clathrate can form It is called :, = promote: = program and therefore promote HfBrj into a program. All Hf f non-volatile substances with similar volatility 'so if the standard genus (such as 80T :) is used, it is necessary to use ion impact to desorb H fBr; autumn degree — the source / Shi Xi (Si) is exposed, the high ion collision energy containing x in the electrical element mass will cause the lower silicon (Si) etching rate, so if the process step The substrate temperature will rise 'because when the substrate temperature is increased: H clothing m ^ m page 17 200426937 V. Description of the invention (13) H f B rx desorption rate will increase exponentially. But at high substrate temperature, a pure halogen The etching rate of Si in the environment also increases exponentially, so the presence of reducing agents such as ytterbium and C is required. In this HBr embodiment, HBr can effectively #etch Hf02, and the presence of some gas phase η can grab Br to reduce The Si etching rate; using HBr under a condition of low total RF power is not an effective si silver engraving method, and its strong ion bond is easy to catch free Br. To further reduce the si etching rate, a special gas such as HBr In addition, the polymerization of the additive in Si can reduce the Si etch rate. At the same time, due to the reducing nature of this polymer, it does not hinder

Hf02 etch rate. Alternatively, such a gas can be added to reduce the etch rate; or diatomic hydrogen (H2) can be added to reduce the etch rate; or another commonly used method can be used to slow the Si etch rate, that is, under high substrate range. To grow SiN or SiO, we can achieve this effect by adding substances containing 0 and / or n such as% or%. However, process optimization requires that the presence of 0 and / or N species will not have a negative impact on the Hf〇2 etch rate. Furthermore, if sufficient C and 存在 are present during the 0 2 etch, the heat can be accelerated by reduction. Money carved rate. Temperature = 8 0 ° C; electrode distance _ 8 〇 / / example day ^ people can use the following strategies to achieve just 2 刚 rate is 1649 职 the rate of rhyme engraving selection is 2.2: PM step-upper end " ---- 〇〇〇〇, lower electrode 1 ^ power = 900 w; substrate support_; pressure = 50 mTorr; gas flow

Lower electrode RF power = 50 W

W ^ 2 holding "^ 9G seconds; Hf〇2㈣-upper electrode RF power = 200 substrate support temperature = 80 ° C; between electrodes _ page 18 200426937 V. Description of the invention (14) a distance of 80 mm; Pressure = 5 mTorr; Gas flow rate = 105 seem HBr; No ESC clamping, no helium back pressure; Duration-time-1 q second; Cooling-substrate support temperature = 80 ° C; electrode spacing-80 mm; pressure = 50 mTorr; Gas flow rate = 50 0 seem He; 1 · 5 kV ESC loss, 10 Torr / 10 Torr center side edge helium back pressure; duration = 30 seconds. As far as the selectivity of Hf 〇2 to Si is concerned, I have confirmed that the etch of Si 〇2 in the plasma is still ion-driven at the temperature of the substrate, but jj f is a kind of chemical money. ; So 'low-end electrode RF power conditions at high substrate temperatures can chemically etch HfO2 at high speeds, but etch S1 02 at lower speeds. First, the ion impact that can break the si-0 bond is necessary to complete any etching. In the case of adding C2H4 or C2H4Br2, the polymer can further protect the Si-0 bond from ion impact, and at the same time go one step further. Slow down the SiO2 etching rate. For example, we can use the following strategies to achieve HfO2 etch rate of 1649 A / min and Hf02 to Si02 etch rate selectivity of 25: PPH step 1 upper electrode RF power = 700 W; lower electrode Heart power = 900 W; substrate support temperature = 80 ° C; electrode spacing-80 mm; pressure = 50 mTorr; gas flow rate = 500 sccm He, 2 seem Cl2; no ESC loss, no helium back pressure; continuous Time-90 seconds; Hf02 etching-RF power of the upper electrode = 200 W; RF power of the lower electrode = 50 W; substrate support temperature = 80 ° C; electrode spacing-80 mm; pressure = 5 mTorr; gas flow rate = 105 seem HBr; no ESC clamping, no helium back pressure; duration-10 seconds; cooling-substrate support temperature = 80 ° C; electrode spacing-80 _; pressure = 50 mTorr; gas flow rate = 500 seem He , 1.5 kV ESC loss, Torr / 10

Page 19 200426937 V. Description of the invention (15) D 0 r r The air pressure on the back side of the helium in the center and edge; duration = 300 seconds. In CPH2, PPH is used to prevent surface impurities. In many examples, the plasma processing system may include a quartz composition, for example, impurities in pure ppH may include Si0 in the quartz composition, and a small amount of Cl2 in the PPH process step may prevent Si0 from forming on the surface of the Hf 02 layer; Alternatively, during the pure He ppH, the M process step (breakthrough) can be inserted before the DE step, and we know (^ 4 BT helps to remove the y from the surface of the bureau " constant dielectric material. In the embodiment, the method of etching a high dielectric constant dielectric layer such as jjf% includes using a halogen-containing gas such as at least one of HBr, Cl2, HC1, NF3, Br2, C2H Jr2, and F2; in addition, the processing gas It may further include a reducing gas, such as H2, C2H4, C2H4Br2, CH4, C2H2, C2H6, C3H4, C3H6, C3H8, C4H6, C4H8, C4H1Q, C5H8, C5H1Q, C6H6, (: 6H1Q and (: 61112 at least one of) For example, a process parameter space may include a halogen-containing gas flow rate and range of 1 to 1000 mTorr (e.g. 5 mTorr) chamber pressure, ranging from 20 to 1000 seem (e.g. 50 seem). Reducing gas flow rate from 1 to 500sccm (e.g. 50seem), ranging from 1 〇 to 2000w (such as 2000w) one of the upper electrode RF offset, and range from 10 to 500w (such as 50 W) one of the lower electrode RF offset; and the upper electrode offset The measurement frequency range can be from 0 MHz to 200 MHz, such as 60 MHz. In addition, the lower electrode offset frequency range can be from 0.1 MHz to 100 MHz, such as 2 MHz. Figure 9 illustrates the heating of a substrate in a plasma processing system. Flowchart 4 00. Heating the substrate to a higher temperature is helpful for pre-heating steps, such as in a series of process steps used to etch a series of different layers, such as forming a plurality of gate stacks on a substrate, The gate stack may include, for example, a silicon-containing layer, a high dielectric

Page 20 200426937 V. Description of Invention (16) 2 Often? Dielectric layer, etc. The method starts from 41. The gas pressure is removed from the back side of the substrate. For example, in a conventional plasma spotting system, the back side gas separation system includes at least one control valve, a pressure regulator, and a flow rate. A gas supply system of the controller, a vacuum pump used to evacuate the backside gas distribution channel, etc. When the backside gas pressure is removed, for example, we can shut down, the gas supply system is connected to the backside gas distribution channel The control device and the like, and the vacuum pump can facilitate the extraction of these channels to exhaust air. The installer of this system should know the back side gas distribution system for improving the heat transfer between the substrate and the substrate holder. Design and use. In 420, I have removed the clamping force acting on the substrate. For example, the substrate can be mechanically or electrically used to clamp the substrate holder B. ^ In the example , I removed the machine that acts on the substrate from the electrostatic chuck :: In the latter example, * removed the high voltage source acting on the static electricity and the voltage of the water 'in the 410 and 420, once The backside gas pressure The handle μt has been removed. When the substrate is resting on the substrate in a vacuum environment, the substrate and the substrate support have a thermal insulation relationship. In an apricot, I introduced a heated gas into the plasma treatment System. In

Kr ^ χ =, the heating gas may include an inert gas, such as He, Ar, including one of 6, and ζ; in another embodiment, the heating gas may be a more clean gas such as ci2. The plasma is ignited at the electrician; in 450, the substantially thermally insulating substrate is exposed to a spleen and spleen, and the plasma can refer to FIGS. 1 to 5 and use any of the above; For example, the RF electrode can be ignited in a plasma processing system by applying at least one of the upper electrodes to the upper electrode.

200426937 V. Description of the invention (17) Plasma, as shown in Figure 4. For example, a process parameter space may include a child pressure greater than 20 mTorr (such as 50 mTorr), an inert gas flow rate greater than or equal to 200 seem (such as 50 0 seem), and less than or equal to 10 seem (such as 2 seem) One of the clean gas flow rates, one of the upper electrode RF offsets ranging from 100 to 2000w (e.g. 700 W), and one of the lower electrode rf ranging from 100 to 2000w (e.g. 900 W). Offset; and the upper electrode offset frequency range can be from 0.1 MHz to 200 MHz, such as 60 MHz; in addition, the lower electrode offset frequency range can be from 0.1 MHz to 100 MHz, such as 2 MHz. For example, the time required to heat the substrate from room temperature to 400 ° C can range from 60 to 120 seconds. FIG. 10 shows a flowchart of a method for engraving a high dielectric constant dielectric layer on a substrate in a plasma processing system according to an embodiment of the present invention. The method 2 starts from 5 1 0, and first raises the substrate temperature, for example, the substrate temperature may be higher than. The temperature of the substrate may preferably be between 300 and 5000. (: in the range (such as 40 (C)); the substrate may use the preheating plasma process as described with reference to FIG. 9 and above ( PPH) heating. In 520, we introduced a processing gas into the plasma processing system to etch a high dielectric constant, such as H f 〇2. In one embodiment, the sense gas contains A halogen-containing gas, such as HBr, Cl2, HC1, NF3, Br

At least one of 2-body C2H4Br2 and dagger; in another embodiment, the processing gas includes a reducing gas such as H2, dagger, CH4, C2H 3il4 ^ ^ C3H8 'C4H6 > C4H8 > C4H10 ^ C5H8 ^ C5H10 ^ C6H6 > at least one of C 6 ^ Q, 2Hl2; and in another embodiment, the processing gas contains at least one of an oxygen-containing gas and a nitrogen-containing gas, such as 02, N2,

Page 22 200426937 V. Description of the invention (18) --- N2 0 and N 02 〇 In 530, ignite the plasma; at 54η, the dielectric layer is exposed to the plasma for a period of time, The electricity is shown in Figure 5 and ignited using any of the techniques described above. For example, the plasma can be ignited in an electrical processing system by applying a biting power to at least one of the upper electrode and the lower electrode, as shown in FIG. 4. For example, a process parameter workshop may include a chamber pressure of 1 to 1000 mTorr (such as 5 mTorr), and a range of element-containing gas flow rates ranging from 20 to 100 0 sccm (such as 50 sccm). One of 1 to 500 seem (e.g. 2 seem) one of the reducing gas flow rate, one of the upper electrode RF offset ranging from 100 to 2000 W (e.g. 200 W), and one of the lower electrode ranging from 10 to 500 W (e.g. 50 W) RF offset; and the upper electrode offset frequency range can be from 0.1 MHz to 200 MHz, such as 60 MHz; In addition, 'the lower electrode offset frequency range can be from 0.1 MHz to 100 MHz, such as 2 MHz or more Although only certain embodiments of the present invention are described in detail, those skilled in the art should readily understand that many modifications can be made in the embodiments without departing from the novel meaning and advantages of the present invention. Therefore, all such adjustments should be included in the scope of the present invention.

Page 23 200426937 Brief description of the drawings V. [Simplified description of the drawings] In the drawings · FIG. 1 is a simplified schematic diagram of a plasma processing system according to an embodiment of the present invention; Schematic diagram of a plasma processing system; Figure 3 is a schematic diagram of a plasma processing system according to another embodiment of the present invention; Figure 4 is a schematic diagram of a plasma processing system according to another embodiment of the present invention; Schematic diagram of plasma processing system; Figure 6 illustrates the substrate temperature response to three different conditions; Figure 7 illustrates the contribution of four different process parameters to substrate heating power; Figure 8 illustrates the substrate temperature response to heating and cooling during processing; Figure 9 Shows a substrate heating method according to an embodiment of the present invention; and FIG. 10 shows a substrate heating method according to another embodiment of the present invention. Description of component representative symbols 1 a, 1 b, 1 c, 1 d Plasma processing system 15 Processing area near the substrate surface 2 0 Substrate support 25 Substrate 26 Electrostatic clamping system 2 7 Backside gas distribution system 3 0 Vacuum extraction System 40RF generator 50 impedance matching network

Page 24 200426937 Simple description of the diagram 6 0 Magnetic field system 70 Upper electrode 72RF generator 72 74 Impedance matching network 8 0 Induction coil 82RF generator 8 4 Impedance matching network •

Page 25

Claims (1)

200426937 A method of basin heating a substrate for heating a substrate on a substrate support in a plasma processing system, including: introducing an inert gas to the plasma processing system, the inert gas including at least He, Ar, Xe, and Kr One of them is to ignite an electropolymer from the processing gas;-to remove the backside gas pressure from the backside of the substrate, the backside gas pressure is assisted by a backside gas distribution system that is integrated with the substrate support surface; Produce; and After the removal is completed, the substrate is exposed to the plasma for a period of time sufficient to raise the temperature of the substrate to more than 2000 ° C. 2. The method for heating a substrate according to item 1 of the scope of patent application, wherein the temperature range is from 300 to 500. 3. The method for heating a substrate according to item 1 of the patent application scope, wherein the temperature is substantially 400 ° C. 4. The method for heating a substrate according to item 丨 of the patent application, wherein the side gas distribution system is used to supply a heat transfer gas to the back side of the substrate, thereby improving the thermal conductivity between the substrate and the substrate support. 5. The method for heating a substrate according to item 1 of the patent application scope, wherein the clamping force is further removed from the substrate, and the misalignment force is generated by the assistance of a clamping system coupled to the substrate support. The method of hot substrate, wherein the electric clamping system is at least 6 of the above. The clamping system includes a mechanical clamping system and one of the following: Page 26 2004269J / 7 · Item 6 of the scope of the patent application, the electric clamping system includes an electrostatic clamping system 8. Item 1 of the scope of the patent application contains:, wherein the method of heating the substrate is included. The method of heating the substrate The cleaning gas contains C1, and a clean gas is introduced. The method of heating the substrate of the first item, "Plasma", the system includes the first _RF product: Ray: This and this The first RF generator uses the above as the electrodes, the support and the second RF generator are operated at a low frequency; and the substrate operates at the second frequency. The second generator is a method for heating a substrate in the tenth item of the patent scope, such as the substrate package 3-South Dielectric Constant Dielectric Layer. 11. If the method for heating a substrate according to item 10 of the patent application, the high dielectric constant dielectric layer in the basin contains Hf02. ′, 12 · A substrate processing method for processing a substrate on a substrate support in a plasma processing system, comprising: etching a first layer on the substrate at a first temperature; Heating the substrate on the substrate support to increase the temperature of the substrate from the first temperature to the second temperature, wherein the heating includes introducing an inert gas to the plasma processing system, the inert gas including He, Ar, At least one of Xe and Kr; igniting a plasma from the processing gas; and exposing the substrate to the plasma for a time sufficient to raise the temperature of the substrate to the second temperature; and at the second A second layer is etched on the substrate at temperature. Page 27 200426937 6. Scope of Patent Application 13. The substrate processing method according to item 12 of the patent application scope, wherein the temperature of the first substrate is lower than 1000. 14. The substrate processing method according to item 12 of the application, wherein the temperature of the first substrate is higher than 2000. (:. 15) If the substrate processing method of item 14 of the patent application scope, wherein the substrate temperature range is from 300 to 500 ° C. Person 16. If the substrate processing method of the item 15 scope of patent application, The second temperature is substantially 400 ° C. ^ ^ 17. The substrate processing method according to item 12 of the patent application scope, wherein the first layer includes at least one of silicon, polysilicon, silicon dioxide, and TaN. 1/18. The method for processing a substrate according to item 12 of the patent application, wherein the second layer includes a high dielectric constant dielectric layer. / 19. The method for processing the substrate, applying item 18 in the patent application, wherein The high-dielectric-constant dielectric layer contains Hf02. 2 0. The substrate processing method according to item 12 of the patent application scope further includes: during the period of the first layer, providing a backside gas pressure to the substrate Back side; and after the first layer is engraved, a back side gas pressure is then removed from the back side of the substrate, the back side gas pressure is generated by the aid of a back side gas distribution system coupled to the substrate support 21. Substrate processing party such as the scope of application for patent No. 20 Method, wherein the backside gas distribution system is used to supply a heat transfer gas to the backside of the substrate to improve the thermal conductivity between the substrate and the substrate support. Page 28 200426937 VI. Patent application scope '-22 · If the patent application scope item 12 of the substrate processing method further includes: during the etching of the first layer, providing a clamp, Liding, and even the substrate After the first layer is etched, a force is then removed from the back side of the substrate. The clamping force is coupled to the substrate support by an apricot: a clamping ^. Ω holding system assisted and 23 clamping One of the 24 ° clamping 25 including ... The substrate processing system such as the scope of patent application No. 22 includes a mechanical clamping system and an electrical failure. • The substrate processing system of the scope of patent application No. 23 includes an electrostatic Clamping system. • If the substrate in item 12 of the patent application is processed, a clean gas is introduced into the substrate. For example, if the plasma is applied for 26 plasma, the first support and the 27-inert gas 28-inclusive system include one and one. RF generates a second RF frequency for operation. • If the body flow rate is high. • If the first temperature is applied to heat to the second temperature, the clean gas contains Cl2. The substrate processing of the 12th item is coupled with the first RF generator to operate at a first frequency, and the second RF substrate processing of the 12th item see ° The substrate processing system of the 12th item Use generator. The patent is in the 400 patent method, wherein the system is at least one of the methods, wherein the method is more inclusive of the period guide method, in which the upper electrode is used; and the substrate generator is used in the method, in which the method , Where the Page 29 200426937 6. Scope of patent application The pressure of the inert gas in the plasma processing system is greater than 20 mTorr. 2 9. The method of processing a plug plate according to item 12 of the patent application scope, wherein the etching of the second layer includes: applying a backside gas pressure to the backside of the substrate, and the backside gas pressure is borrowed from the substrate support One of the couplings is generated by the backside gas distribution system. 30. The substrate processing method according to item 12 of the scope of patent application, wherein the etching of the second layer includes: applying a clamping force to the substrate, and the clamping force is one of engaging with the substrate support It is produced by the aid of inflammation support system. Page 30