五、發明說明（1) 【發明所屬之技術領域 本發明涉及一種平板 口。 一種場發射顯示器之製備方不為之製備方法，特別係涉及 【先前技術】 去。 場發射顯示器係平板 尖端放電轟擊熒光I % 不為之一種，通過施加電場使 射線管顯示器圖像，其原理與傳統陰極電才i 源亦不會受視角限制争:j :j、、耗電低、且不使用背光 向。 糸十板頌示器發展的一個重要方 傳統場發射顯示哭接 金屬尖端製作尺寸二 金屬尖端作為發射元件，但受 Μ ^ ± ^ Jr R &制，限制顯示器本身尺寸大小，且全 屬大鳊本身也易因損耗而降低壽命。 且i 1 9 ^年I i H m a在電弧放電產物中首々發捃太半# 一 詳細内容參見1 9.91年出… 二人發現奈未喊官， 年出版之Nature 354，56，Helical 的莫雪〜eS 〇f Graphitic Carb〇n。奈米碳管以其優良 妒# μ产:、機械性能、奈米級尖端等特性而成為優良的 %發射陰極電極材料之一。 ^ ^無論傳統場發射顯示器或奈米碳管場發射顯示器要 她1义好的顯不效果，都須採用三級型結構，該種結構中 f和陰極電極間之阻隔壁製備工藝係關鍵性技術之一。 射顯不|§中要求阻隔壁精度高，高度均勻一致，密度 較南，=緣效果好以實現良好的顯示效果。 目前阻隔壁之製備方法主要有絲網印刷法和噴沙法。 4網印刷法由於印刷次數較多，容易造成限隔壁上寬下V. Description of the invention (1) [Technical field to which the invention belongs] The present invention relates to a flat mouth. A method for preparing a field emission display that is not prepared by the preparation method, and particularly relates to [prior art]. The field emission display is not a type of fluorescent I% bombarded by a flat-tip discharge. The principle of the source is not limited by the angle of view of the traditional cathode electricity source by applying an electric field to the image of the ray tube display: j: j 、、 power consumption Low and no backlight is used. An important aspect of the development of the ten-plate chanter is the traditional field emission display. The metal tip is made of two metal tips as the emitting element, but it is limited by the M ^ ± ^ Jr R & and the size of the display itself is limited. Tritium itself is also prone to reduce life due to wear and tear. And i 1 9 ^ year I i H ma in the arc discharge products first issued 捃 太 半 # # For details, see 19.91 ... The two discovered Nai Weihao, published in Nature 354, 56, published by Helical Mo Xue ~ ESf Graphitic Carbon. Nano-carbon tubes have become one of the excellent% emitting cathode electrode materials due to their excellent properties: mechanical properties, nano-level tips and other characteristics. ^ ^ Regardless of whether a conventional field emission display or a nano-carbon tube field emission display requires a good display effect, it must adopt a three-stage structure, in which the barrier wall preparation process between f and the cathode electrode is critical. Technology one. It is required that the barrier wall has high accuracy, uniform height, and higher density than the south, so the edge effect is good to achieve a good display effect. At present, the preparation methods of the barrier wall mainly include a screen printing method and a sandblasting method. 4 screen printing method due to the large number of prints, it is easy to cause
第7頁 200419624 五、發明說明（2) 窄、高低不一致，且•士、土 & # e 乾，印刷精度有限：ΐ;':通常需要多次印刷及烘 不高，燒結後阻隔過200微米，精度 i f αA 頂千整度差，需要借助研磨笨：^ t 勻、頂部平整，導致成本較高：ΐ: 適於％發射顯示器之女葙 因此不 楸狀整赢、铜辟坐 、果 貝沙法主要適用於萝備 形狀正Θ侧壁幾乎垂直之阻隔壁，但 於衣備 費”較長’必須控制每次喷砂之均；度，且c花 部易成弧形，工藝穩定性較差， 貝=之後底 要求高、需要嚴格超淨環i# 5术嚴重。這與精度 明顯衝突。 （尹衣土兄之场發射顯示器之製備要求有 其他製備方法主要右忠力丨、、+ 需要配置合適漿料，價格Γ : ’，二拉壓法、澆鑄法等，都 雜耗時，要達到場發射‘ lp! ’而要烘乾及燒結，工藝複 難。 ，‘ ^射頰不為、阻隔壁之精度要求比較困 絲上所述，大面積、高精場门 其阻隔壁之製:備困難而受限。劳知貝丁抑之衣備必因 有鑑於此，提供一種具有耗少、盔污、古谇 為必要。 備之阻^壁之場發射顯示器之製備方法實 【内容】 於射ί is:的在於克服因阻隔壁製備精度不高導致場 發射顯不裔製備受限之不足， 〒双％ 染、高精度且適用於大面产制/、 /、有耗％父、無污 之製備方法。、面積衣備之阻隔壁之場發射顯示器 $ 8頁 200419624 五、發明說明（3) 為實現上述 之製備方法，其 1 ·提供一基 射點陣；2. 罩；. 目的，本發明提供提供 包括以下步驟： 底，在基底上沈積陰極|, I極，亚形成場發 種場發射顯示器 選擇金屬板材光刻出與場發射顯示點陣相對應之陰 5 ·6 · 相 利用陰 面沈積 據顯示 器所需 染、高 之製備 【實施 請 例之第 步 奈米碳 步 相對應 在陰罩表 在阻隔壁 將阻隔壁 將熒光屏 較於現有 極電極射 絕緣材料 •器之需要 要之絕緣 精度且適 〇 方式】 參閱第一 一實施例 驟1 0，提 管陣列。 驟20，選 之陰罩。 面沈積絕緣材料形成阻隔辟. 表面沈積栅極電極； 固定在基底上； 與基底封接。 ;術2發明場發射顯示器之製備方法係 線官中，熟之陰罩製備工藝，通過在其， 而形成南精度阻隔壁，由於陰罩材 絕緣層材料及厚度亦可根據顯； 強度決疋，故，可實現具有耗時少、無污 用於大面積製備之阻隔壁之場發射顯^器 圖，係本發明以奈米碳管場發射顯 製備流程圖。其包括以下步驟： 供基底’在基底上沈積陰極電極 器為 生長 擇金屬板材製備與場發射顯示器顯示點陣Page 7 200419624 V. Description of the invention (2) Narrow, inconsistent height, and • Shi, Tu &# e dry, printing accuracy is limited: ΐ; ': usually need to print and bake many times, the sintering barrier over 200 Micron, the accuracy if αA is poor. The top level is poor, and it needs grinding. ^ T is uniform and the top is flat, which leads to higher costs: The Bessar method is mainly applicable to the barrier wall with the shape of the positive Θ side wall which is almost vertical. Poor, Be = high requirements on the back end, serious strict cleanliness loop i # 5 technique is serious. This conflicts with accuracy. (Yin Yitu Brother's field emission display requires other preparation methods, mainly right loyalty 丨, + Need to configure the appropriate slurry, price Γ: ', two-pulling method, casting method, etc., are all time consuming, to achieve field emission' lp! 'And drying and sintering, the process is difficult. As mentioned above, the accuracy requirements of the barrier wall are relatively difficult. Product and high-precision field gates are made by the barriers of the barriers: they are difficult to prepare. Due to this, it is necessary to provide a cost-effective, helmet-stained, and ancient coat. Preparations ^ The preparation method of the wall field emission display [Content] Yu She is: to overcome the shortage of field emission due to the low preparation accuracy of the barrier wall, and the limitation of the preparation. Noodle production /, /, consumption method of% parent, non-polluting preparation method, area emission display of the barrier next to the wall $ 8 pages 200419624 V. Description of the invention (3) In order to realize the above-mentioned preparation method, which 1 · Provide a base emission lattice; 2. Cover ;. Purpose, the present invention provides and provides the following steps: Bottom, depositing a cathode on the substrate |, I pole, sub-formation field emission field emission display selection metal sheet photolithography and field Emission display dot matrix corresponding to Yin 5 · 6 · Phase using the negative surface deposition according to the display required dyeing, high preparation [the first step of the implementation example nano carbon step corresponds to the shadow mask surface on the barrier wall will be the barrier wall will be the fluorescent screen Compared with the existing polar electrode Insulation materials and devices need insulation accuracy and proper method] Refer to the first embodiment, step 10, tube array. Step 20, choose a shadow mask. Surface deposited insulating material to form a barrier. Surface deposited gate electrode ; Fixed on the substrate; Sealed to the substrate;; Invented the method of preparing the field emission display of the line 2 in the lineman, the familiar shadow mask preparation process, through which a south-precision barrier wall is formed, due to the insulating layer of the shadow mask material The material and thickness can also be determined according to the display strength. Therefore, a field emission display with barriers that are less time-consuming and pollution-free for large-area production can be realized. This is a nano-carbon tube field emission display of the present invention. Preparation flow chart. It includes the following steps: for the substrate 'to deposit a cathode electrode on the substrate, to prepare a metal sheet for growth, and to display a dot matrix of a field emission display.
第9頁 200419624Page 9 200419624
::30 ’在陰罩表面沈積絕緣材料而形成阻隔壁。 二知4 0，在阻隔壁表面沈積柵極電極。 v驟50，將阻隔壁固定在基底上。 步驟60，將熒光屏與基底封接。 下面結合具體圖示說明該奈米碳管場發射顯示器之製 =苓閱ί 一圖，首先提供一基底11，該基底材料可選 用玻璃、陶t、氧化碎或氧化链等絕緣材#，但要求基底 表面平整度小於1微米，而且基底能耐受奈米碳管之生長 溫度丄一般大於700 t。然後在基底u上通過電鍍、磁控 濺，等方法沈積陰極電極丨2，再在陰極電極丨2上形成奈米 該奈米碳管13可通過化學氣相沈積法直接在陰極電極 1 2上生長或預先製備後移植到陰極電極12上。預先製備之 奈=碳管可採用習知之化學氣相沈積法在矽基底上生長而 獲得，然後籍由導電膠將與;ε夕基底相脫離之奈米碳管魅在 陰極電極12上。直接生長在陰極電極12上之奈来碳管13可 通過矽過渡層法或氧化法獲得。 其中矽過渡層法包括以下步驟：首先利用熱蒸發或電 子束蒸發法在陰極電極12表面蒸鐘一層石夕過渡層，其厚戶 為幾十奈米；然後利用電子束蒸發沈積、熱沈積或濺射$ 等在矽過渡層上沈積一層金屬催化劑層，其厚度為幾奈米 到幾十奈米不等，其中，金屬催化劑可為鐵（F e )、鈷 (Co)、鎳（Ni)或其合金之一；隨後在溫度3〇〇〜4〇〇 °c之間:: 30 ’The barrier is formed by depositing insulating material on the surface of the shadow mask. The second method is to deposit a gate electrode on the surface of the barrier wall. vStep 50. Fix the barrier on the substrate. In step 60, the phosphor screen and the substrate are sealed. The following describes the system of the nano-carbon tube field emission display with a specific illustration. First, a substrate 11 is provided. The substrate can be made of insulating materials such as glass, ceramics, oxidized shreds, or oxidized chains. The flatness of the substrate surface is required to be less than 1 micron, and the substrate can withstand the growth temperature of the carbon nanotubes, which is generally greater than 700 t. Then, a cathode electrode is deposited on the substrate u by electroplating, magnetron sputtering, and the like, and then a nanometer is formed on the cathode electrode. The carbon nanotube 13 can be directly deposited on the cathode electrode 12 by chemical vapor deposition. It is grown or prepared in advance and transplanted to the cathode electrode 12. The carbon nanotubes prepared in advance can be obtained by growing on a silicon substrate by a conventional chemical vapor deposition method, and then the carbon nanotubes which are separated from the ε substrate by the conductive glue are charmed on the cathode electrode 12. The carbon nanotube 13 grown directly on the cathode electrode 12 can be obtained by a silicon transition layer method or an oxidation method. The silicon transition layer method includes the following steps: firstly, a layer of stone transition layer is evaporated on the surface of the cathode electrode 12 by thermal evaporation or electron beam evaporation method, and its thickness is tens of nanometers; and then electron beam evaporation deposition, thermal deposition, or A metal catalyst layer is deposited on the silicon transition layer with a thickness ranging from a few nanometers to a few tens of nanometers. The metal catalyst may be iron (F e), cobalt (Co), or nickel (Ni). Or one of its alloys; subsequently at a temperature between 300 and 400 ° c
200419624 五、發明說明（5) ^' " *------一一· 退火處理約1 0小時形成催化劑气仆瞭·、s 體，同時加熱至65〇〜7〇(TC ; 入惰性保護氣 應，長出奈米碳管U。 再通入叙源氣（如乙快）反 氧化法與石夕過渡層法類似，200419624 V. Description of the invention (5) ^ '" * ------ One by one · Annealing treatment takes about 10 hours to form a catalyst gas body, s body, and at the same time, it is heated to 65〇 ~ 7〇 (TC; into The inert protective gas should grow into a nano-carbon tube U. Re-introducing the Syrian source gas (such as Yikuai) The reverse oxidation method is similar to the Shixi transition layer method.
，在表面形严'氧化層以替，夕過；層法：：：=】極J 厚度小於1微米’後面步驟與矽過渡層.法類似广-束蒸發沈積、熱沈積或賤射法等在 j用-子 催化劑層；隨後退火處理催化匈.、s 工尤積一層金屬 時加熱至預定溫度後通入以，=性保護氣體，同 請參閱第三圖，係本；：：製管夂 阻隔壁31之製備包括以下步驟·· 二ς T t圖。讀 點陣尺寸製作光刻模版；然後根據奈米 f擇厚度適宜之金屬板材，，中，金屬板材之；幾 殷瓦鋼（ir\var steel)、低碳鋼或其他金屬合金，但^用 其熱膨脹係數與基底11相匹配；然後將選之-喪 二"=1;!與顯示點陣嫩 21，在陰罩21表面通過電泳工藝、噴塗法等適當工蓺J 絕緣層材料32形成阻隔壁31。其中，絕緣層材料32 =積 乳化鋁、氧化鎂等材料’主要取決 p 絕緣強度決定。 厚度陰極電極與栅極電極間ί 本貝％例中以氣化|呂為絕緣層材^ ^ ^ ^ ^ 藝在陰罩21表面沈積氧化铭形成阻隔壁 +二兄中月用二卜 料係金屬鋁，陰極電極係預先製備好之陰罩Μ，電泳=， 200419624 五、發明說明（6) 含鋁離子溶液。本實施例中電泳液選用甲醇6 0 0 m 1、硫酸 鎂（MgS04)6g·、硝酸铭（AlNO3)30ml、氧化鋁（A1203 )9 0〇g 及 6 0 0 m 1去離子水所配之溶液。電泳時間主要取決於顯示器 所需的絕緣層厚度。 陰罩2 1表面電泳沈積氧化鋁後形成之阻隔壁3 1，如第 三圖所示，其包括陰極電極射線管中所使用之陰罩2 1及沈 積在陰罩21表面之氧化鋁，其中氧化鋁厚度1〇〜5〇〇微米， 優選7 5〜2 0 0微米。 另外’陰罩2 1表面電泳沈積氧化鋁後，可將其在清洗 液中短時間浸泡’清洗掉電泳層表面之浮塵（如未附著牢 固之絕緣材料）後固化、烘乾。本實施例中清洗液選用乙 基纖維85g、丁醇6〇mi及二曱苯（3度級）34〇〇ml配製之溶 液，浸泡時間卜5分鐘。 請 5 1上， 束蒸發 電極41 固定方 請 碳管場 62可起 同 上述方 代0 施加應 、熱蒸 之阻隔 式可採 參閱第 發射顯 壓牢阻 樣，製 法製備 四圖，將 力使之平 發或錢射 壁31連同 用低溶點 五圖，將 示器。封 隔壁，防 備傳統型 ，主要區 阻隔壁31固定在帶有定位面之框奈 整。然後在祖隔壁3 1表面通過電j 法沈積柵極電極41。將沈積有柵名 定位框架5 1 —起固定在基底1丨上 玻璃粉熔接。 癸光屏61與基底11封接，製成奈到 接時熒光屏61與基底11間之支撐才 止局部不平整之功效。 金屬尖端之場發射顯示器亦可採# 別在於場發射元件由金屬央端替 200419624 五、發明說明（7) 本發明之第二實施例中 備還可以採用以下步驟： 首先在一基底11上沈積 與第一實施例同樣之方法製 沈積柵極電極4 1 ;然後將F且 有陰極電極1 2及催化劑之基 阻隔壁31 —起放進用於生長 碳管13 ;最後將熒光屏61與 由於阻隔壁31會一同故 例中阻隔壁3 1之固定方法不 採用焊接或適當夾具以固定 綜上所述，本發明確已 提出專利申請。惟，以上所 例，自不能以此限製本案之 技藝之人士援依本發明之精 應涵蓋於以下申晴專利範圍 ’奈米碳管場發射顯示器之製 陰極電極1 2和催化劑層；採用 備阻隔壁3 1，在阻隔壁3 1表面 隔壁31連同柵極41固定在沈積 底11上；再將上述基底11連同 奈米碳管之生長爐中生長奈米 基底11封接。 進上述生長爐中，所以此實施 能採用低溶點玻璃粉固定，而 符合發明專利之要件，遂依法 述者僅為本發明之較佳實施 申請專利範圍。舉凡熟悉本案 神所作之等效修飾或變化，皆 内0 參On the surface, the oxide layer is replaced. The layer method: :: =] pole J thickness is less than 1 micron. The latter step is similar to the silicon transition layer. The method is similar to the wide-beam evaporative deposition, thermal deposition, or low-emission method. In the use of the-sub-catalyst layer; the subsequent annealing treatment catalyzes the Hungarian, Hung, and Sung workers, and heats up to a predetermined temperature when a layer of metal is heated, and then passes in a protective gas. See the third figure for the same; The preparation of the barrier rib 31 includes the following steps. Read the size of the dot matrix to make a lithographic template; then select the appropriate metal sheet, medium, or metal sheet according to the nanometer f; ir \ var steel, low carbon steel, or other metal alloys, but use Its coefficient of thermal expansion matches that of the substrate 11; then it will be selected-Funeral " = 1 ;! and the display dot matrix tender 21, formed on the surface of the shadow mask 21 by electrophoresis, spraying, and other appropriate methods. The insulating layer material 32 is formed. Barrier wall 31. Among them, the material of the insulating layer 32 = product such as emulsified aluminum, magnesia and so on 'is mainly determined by p insulation strength. Thickness between the cathode electrode and the gate electrode. In this example, gasification | Lu is used as an insulating layer. ^ ^ ^ ^ ^ The process of depositing an oxide inscription on the surface of the shadow mask 21 to form a barrier wall Metal aluminum, the cathode electrode is a shadow mask M prepared in advance, electrophoresis =, 200419624 V. Description of the invention (6) Aluminum ion-containing solution. In this embodiment, the electrophoresis solution was selected from methanol 600 m 1, magnesium sulfate (MgS04) 6 g ·, nitrate nitrate (AlNO3) 30 ml, alumina (A1203) 900 g, and 600 m 1 deionized water. Solution. The electrophoresis time is mainly determined by the thickness of the insulating layer required for the display. The shadow barrier 21 formed by electrophoretic deposition of alumina on the surface of the shadow mask 21, as shown in the third figure, includes a shadow mask 21 used in a cathode electrode ray tube and alumina deposited on the surface of the shadow mask 21, of which The thickness of the alumina is 10 to 500 micrometers, preferably 75 to 200 micrometers. In addition, after the alumina is electrophoretically deposited on the surface of the shadow mask 21, it can be immersed in the cleaning solution for a short period of time. In this embodiment, a solution prepared by using 85 g of ethyl fiber, 60 ml of butanol and 3,400 ml of diphenylbenzene (grade 3) was used, and the soaking time was 5 minutes. Please fix the beam evaporation electrode 41 on the fixed side. The carbon tube field 62 can be applied in the same way as the above. The barrier type of applying heat and steam can be used. The flat hair or money shooting wall 31 will be displayed together with five figures with low melting point. The partition wall is closed to prevent the traditional type, and the main wall 31 is fixed on a frame with a positioning surface. Then, a gate electrode 41 is deposited on the surface of the ancestral partition wall 31 by an electrical method. The positioning frame 5 1 having the grid name deposited thereon is fixed on the substrate 1 丨 and the glass powder is welded. The Guiguang screen 61 is sealed to the substrate 11, and the support between the fluorescent screen 61 and the substrate 11 is only effective when the support is made. The field emission display with a metal tip can also be used # The difference is that the field emission element is replaced by a metal central end 200419624 V. Description of the invention (7) In the second embodiment of the present invention, the following steps can also be used: First, deposit on a substrate 11 The gate electrode 41 was deposited in the same way as in the first embodiment; then F and the cathode barrier electrode 12 and the catalyst-based barrier wall 31 were put into the carbon tube 13 for growth; finally, the fluorescent screen 61 and The method for fixing the wall 31 in the same example does not use welding or a suitable fixture to fix the above. In summary, the present invention has indeed applied for a patent. However, the above examples, since those who cannot limit the skills of this case, rely on the essence of the present invention should be covered by the following application of the patent of the patent 'nano carbon tube field emission display cathode electrode 12 and catalyst layer; The barrier rib 31 is fixed on the sunken bottom 11 with the barrier rib 31 and the grid 41 on the surface of the barrier rib 31; and the nano substrate 11 is sealed in the growth furnace of the substrate 11 and the carbon nanotube. Into the above-mentioned growth furnace, so this implementation can be fixed with low melting point glass powder, and in accordance with the requirements of the invention patent, the applicant according to the law only applies for the scope of patent application for the preferred implementation of this invention. For any equivalent modification or change made by God familiar with this case,
第13頁 200419624 圖式簡單說明 第一圖係本發明製備場發射顯示器 > 泣加 々丨L矛午|^| 〇 圖 第二圖係本發明沈積陰極電極及夺〜 官之基底示意 第三圖係本發明坊舍射頭示器阻隔璧厂、立 第四圖係在第三圖所不之阻隔壁上、、少二二圖。 其固定在基底上之示意圖。 上此積栅極電極後將 第五圖係本發明場發射顯示器之榮先屏封接後示意 圖0 主要元件符號說明】 基底 11 奈米碳管 13 阻隔壁 31 柵極電極 41 熒光屏 61 陰極電極 12 陰罩 21 絕緣層村_ 32 框架 51 支撐柱 62Page 13 200419624 Schematic illustration of the first diagram is the preparation of the field emission display of the present invention > 々 丨 L spear Wu | ^ | 〇 The second diagram is the deposition of the cathode electrode and the substrate of the present invention schematic third The picture shows the block head factory of the present invention, and the fourth picture is on the barrier wall not shown in the third picture. A schematic diagram of its fixing on a substrate. The fifth picture after the gate electrode is stacked is the schematic diagram of the field emission display of the present invention after the screen is sealed. 0 Key component symbols] Substrate 11 Nano carbon tube 13 Barrier wall 31 Gate electrode 41 Fluorescent screen 61 Cathode electrode 12 Shade 21 Insulation village _ 32 Frame 51 Support post 62
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