TW200416349A - Micro-fabricated electrokinectic pump - Google Patents

Micro-fabricated electrokinectic pump Download PDF

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TW200416349A
TW200416349A TW92126267A TW92126267A TW200416349A TW 200416349 A TW200416349 A TW 200416349A TW 92126267 A TW92126267 A TW 92126267A TW 92126267 A TW92126267 A TW 92126267A TW 200416349 A TW200416349 A TW 200416349A
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Taiwan
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patent application
liquid
scope
pump
item
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TW92126267A
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TWI314610B (en
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David Corbin
Kenneth E Goodson
Jr Thomas William Kenny
Juan G Santiago
shu-lin Zeng
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Cooligy Inc
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Abstract

An electrokinetic pump for pumping a liquid includes a pumping body having a plurality of narrow, short and straight pore apertures for channeling the liquid through the body. A pair of electrodes for applying a voltage differential are formed on opposing surfaces of the pumping body at opposite ends of the pore apertures. The pumping body is formed on a support structure to maintain a mechanical integrity of the pumping body. The pump can be fabricated using conventional semiconductor processing steps. The pores are preferably formed using plasma etching. The structure is oxidized to insulate the structure and also narrow the pores. A support structure is formed by etching a substrate and removing an interface oxide layer. Electrodes are formed to apply a voltage potential across the pumping body. Another method of fabricating an electrokinetic pump includes providing etch stop alignment marks so that the etch step self-terminates.

Description

200416349 五、發明說明(1) 相關申請 本專利申請在共同美國臨時專利申請No. 6 0 / 4 1 3, 1 9 4, 2 0 0 2, 9, 2 3提出,標題為微製造電動能泵”, 3 5 U. S. C. 11 9(e)之下宣布優先權。臨時美國專利申請 No. 6 0 /4 1 3, 1 94,2 0 0 2, 9, 2 3提出之π微製造電動能泵”以 參考方式併入此間。 發明範圍 本發明關於供冷卻之裝置及方法。該裝置特別關於一改 進之電動能泵,其具有直及甚小之微孔隙及長度。該泵為 利用半導體處理技術製造。 發明背景 高密度積體電路最近已進展至包括能增加電晶體密度及 時脈速度。此趨勢之結果為現代微處理器之功率密度之增 加,及出現之新冷卻技術之需求。在史丹佛,1 9 9 8年已研 究二相液體冷卻,展示一閉合迴路系統能消除1 3 0 W之熱。 此系統之主要元件為電動能泵,其具有在以1 0 0 V之作業電 壓,大於一大氣之壓力頭之下十數個m 1 /分鐘液體流動之 能力。 此一展示在微通道熱交換器中以液體蒸氣混合器實施, 因為其中之不足之液體流可捕捉產生之熱不致沸騰。小部 分液體轉換為蒸氣需要高壓力作業。及增加泵之壓力作業 需求。此外,二相流動在冷卻裝置作業期間較不穩定,可200416349 V. Description of the invention (1) Related applications This patent application was filed in the Common U.S. Provisional Patent Application No. 6 0/4 1 3, 1 9 4, 2 0 0 2, 9, 2 3 and the title is Micromanufacturing Electric Energy Pump ", Priority is announced under 3 5 USC 11 9 (e). Provisional US Patent Application No. 6 0/4 1 3, 1 94, 2 0 0 2, 9, 2 3 Incorporated here by reference. Scope of the invention The present invention relates to devices and methods for cooling. The device is particularly concerned with an improved electric energy pump having straight and very small micropores and lengths. The pump is manufactured using semiconductor processing technology. BACKGROUND OF THE INVENTION High density integrated circuits have recently progressed to include the ability to increase transistor density and clock speed. The result of this trend is an increase in the power density of modern microprocessors and the need for emerging cooling technologies. In Stanford, two-phase liquid cooling has been studied in 1988, showing that a closed loop system can remove 130 W of heat. The main component of this system is an electric energy pump, which has the ability to flow liquid at a pressure of more than ten m 1 / min below a pressure head of 100 V above an atmospheric pressure. This demonstration is implemented as a liquid vapor mixer in a microchannel heat exchanger, as the insufficient liquid stream therein can capture the heat generated without boiling. The conversion of a small portion of liquid to vapor requires high pressure work. And increase the demand for pump pressure operation. In addition, two-phase flow is less stable during operation of the

第8頁 200416349 五、發明說明(2) 導致瞬時之波動及不易控制晶片溫度。在該展不中之栗係 根據具有數mm厚度之多孔玻璃濾光器。此等結構之缺點為 微孔密度,結構,及平均直徑不均勻,亦不易在低成本製 造方法中再生。此外,此結構中之液體路徑為彎曲的,導 致固定泵厚度之低流速。具有相同特性之多孔瓷結構顯示 大量變化之泵浦特性。 因此所需為一電動能泵元件,其能提供一相當大之流量 及壓力於一緊密結構中,及能提供泵特性之較佳均勻性。 本發 供 較佳 過本 面, 直的 相對 成以 製 及包 穿過 為氧 耦合 明概述 泵出液體 為1 0微米 體之通道 其直徑較 。泵體較 表面形成 保持泵體 造一電動 括提供具 第一材料 化。在第 以使液體 造一電動 製 板。複數個蝕 之電動能泵包括一泵體,其具有預定厚度, 及1毫米。泵體包括複數個微孔隙供液体通 ,每一微孔隙自第一外表面延伸至第二外表 佳為0 . 1 - 2 . 0微米。該微孔較佳為窄,短及 佳為氧化。施加電位差之一對電極在泵體之 於微孔隙之相反端。該泵體在支撐結構上形 之機械統合性。 能果之方法較佳利用傳統半導體方法技術^ 有第一表面及第二表面之泵體之第一材料。 形成複數個微孔隙。包括微孔隙内部之泵體 一及第二表面上形成一電極。一電位跨電極 流動通過複數個微孔隙。 能泵之另一方法包括提供具有第一表面之基 刻停止校正記號在第一表面上形成。一泵元Page 8 200416349 V. Description of the invention (2) Causes instantaneous fluctuations and difficult to control the temperature of the wafer. The chestnut in this exhibition is based on a porous glass filter having a thickness of several mm. The disadvantages of these structures are that the micropore density, structure, and average diameter are not uniform, and it is not easy to regenerate in low-cost manufacturing methods. In addition, the liquid path in this structure is curved, resulting in a low flow rate with a fixed pump thickness. Porous porcelain structures with the same characteristics show a large variety of pumping characteristics. Therefore, what is needed is an electric energy pump element that can provide a relatively large flow and pressure in a compact structure, and can provide better uniformity of pump characteristics. The present invention is better than this. Straight relative to the system and the package through for oxygen coupling. Overview Overview The pumped liquid channel is 10 micrometers in diameter and its diameter is relatively large. The pump body is formed on the surface to maintain the pump body. In order to make the liquid to make a motorized plate. The plurality of etched electric energy pumps include a pump body having a predetermined thickness and 1 mm. The pump body includes a plurality of micropores for liquid communication, and each micropore extends from the first outer surface to the second outer surface, preferably from 0.1 to 2.0 microns. The micropores are preferably narrow, short and preferably oxidized. A pair of electrodes with a potential difference applied is at the opposite end of the pump body from the micropores. The pump body is mechanically integrated in its support structure. The energy-efficient method preferably utilizes a conventional semiconductor method technique. The first material of the pump body has a first surface and a second surface. A plurality of micropores are formed. An electrode is formed on one and the second surface of the pump body including the inside of the micropores. A potential flows across the micropores across the electrodes. Another method of pumping includes providing a base stop correction mark having a first surface formed on the first surface. One pump

第9頁 200416349 五、發明說明(3) :材料f第一表面上形成。複數個微孔隙通 支撐結構在每一蝕刻停止記號之下以^ 料形 料形成。最後之結構包括微孔隙内部予以氧化二所餘之材 元件所加之电位差驅動液體通過複數個毛細管。/、中%泵 本發明之其他特性及優點將可自較佳實施 及而更為明顯。之砰細說明 車父佳貫施例之詳細說明Page 9 200416349 V. Description of the invention (3): Material f is formed on the first surface. A plurality of microporous support structures are formed in the shape of a material under each etch stop mark. The final structure consists of oxidizing the two remaining materials inside the micropores, and the potential difference applied by the element drives the liquid through the plurality of capillaries. /, Medium% pump Other features and advantages of the present invention will be more apparent from better implementation. Detailed Explanation of Car Father Jiaguan's Example

ί考本务明之較佳及各實施例之細節,其 圖式說明。本發明將與較佳實施例一起說明,應瞭=隨之 構成對本發明此等實施例之限制。反之,本發明欲1ί不 本發明申請專利範圍内之各實施例,修改及等值物:急在 外,以下之本發明詳細說明及特殊細節公布於下以, 瞭解本發明。但,應注意,本發明無此等細節亦可實^ 在/、他事例上,知名之方法,步驟,組件及電路未予、 述以免妨害本發明之特性。 ^ ^ 電動能泵或滲透泵之基本性能有下列關係: Q Ψ Γ ε V A / τ μ L (1 - 2 λ I 1 ( a / λ d) / a I 〇 ( a / λ d ) (1) Δ Ρ-8ε ζ V/a2(l-2A IKa/λ d/aIo(a/A d)) (2,)Consider the best of this matter and the details of each embodiment, and its schematic description. The present invention will be described together with the preferred embodiments, and should be considered as a limitation to these embodiments of the present invention. On the contrary, the present invention intends to describe the embodiments, modifications, and equivalents within the scope of the patent application of the present invention: urgently, the following detailed description and special details of the present invention are disclosed below to understand the present invention. However, it should be noted that the present invention can be implemented without such details. In other cases, well-known methods, steps, components, and circuits are not described, so as not to hinder the characteristics of the present invention. ^ ^ The basic performance of electric energy pumps or osmotic pumps has the following relationship: Q Ψ Γ ε VA / τ μ L (1-2 λ I 1 (a / λ d) / a I 〇 (a / λ d) (1) Δ Ρ-8ε ζ V / a2 (l-2A IKa / λ d / aIo (a / A d)) (2,)

如公式(1 )及(2 )所示,Q為液體流過泵之流速,△ ρ為久 栗之壓力降,a為微孔隙直徑。此外,變數ψ為微孔隙之鮮 孔隙率,Γ為zeta電位,ε為液體之電容率,v為跨孔 1序、As shown in formulas (1) and (2), Q is the flow velocity of the liquid flowing through the pump, Δρ is the pressure drop of Jiuri, and a is the micropore diameter. In addition, the variable ψ is the fresh porosity of the micropores, Γ is the zeta potential, ε is the permittivity of the liquid, and v is the cross-pore sequence.

第10頁 200416349 五、發明說明(4) 電壓,A為栗之總面積,τ為彎曲度,//為黏度,L為元件 厚度。公式(1 ),( 2 )括號内之項目為當孔隙直徑到達充電 層,即D e b y e層;L d尺寸時之改正數,其數僅為數個毫微 米。當孔徑直徑為0 . 1 mm時,此等公式可簡化為: Q=¥ ζ /τ . ε Vk/β L (3) Δ P- 8Γ V/a2 (4) 如公式(3 )及(4 )所示,流量及壓力量與出現之量成正 比,但,其他參數出現時可影響泵之性能。例如,彎曲度 τ說明與泵厚度相關之長度,對大泵具有迴旋非平行通道 之用。長度L為泵元件之厚度ν如公式(3 )及(4 )所示,泵 元件之彎曲度r及厚度L與流體公式(4)成反比, 而未出現於公式(4 )。微孔徑之值徑平方a與壓力公式(4 ) 成反比,未出現於公式(3)。 本發明之泵與習知技藝比較,可一大幅降低之電壓操 作,但仍可產生相同或更大流量而無大幅壓力降低。現有 之泵具有平均微孔徑直徑為〇 . 8 - 1. 2微米。此外,現有瓷 泵元件厚度為3-4mm,彎度為1 . 4-2. 0。典型習知電動能泵 厚度為2.5mm,在電壓100V,最大壓力l.OOAtm時,能產生 流量25ml/分鐘。 對比之下,泵元件之厚度降低1 0 0倍;彎曲度改進大於3 因數;微孔隙直徑降低三倍。此三因數之降低可使本發明 之粟元件可操作在降低十倍之電壓,仍可產生大十倍之流 量。本發明之泵元件可在以下降低條件操作:微孔徑之直 徑;泵元件之厚度;及泵元件之彎曲度。Page 10 200416349 V. Description of the invention (4) Voltage, A is the total area of the chestnut, τ is the bending degree, // is the viscosity, and L is the thickness of the component. In the formula (1) and (2), the items in parentheses are when the pore diameter reaches the charging layer, that is, the D e b y e layer; the correction number when the size of L d is only a few nanometers. When the diameter of the aperture is 0.1 mm, these formulas can be simplified as: Q = ¥ ζ / τ. Ε Vk / β L (3) Δ P- 8Γ V / a2 (4) As shown in formulas (3) and (4 ) Shows that the amount of flow and pressure is proportional to the amount that appears, but other parameters can affect the performance of the pump when it appears. For example, the tortuosity τ indicates the length related to the thickness of the pump, and has a non-parallel channel for large pumps. The length L is the thickness ν of the pump element as shown in formulas (3) and (4). The bending degree r and thickness L of the pump element are inversely proportional to the fluid formula (4), and do not appear in formula (4). The diameter of the micropore diameter is inversely proportional to the pressure formula (4) and does not appear in formula (3). Compared with the conventional technology, the pump of the present invention can operate with a greatly reduced voltage, but can still produce the same or greater flow rate without a significant pressure drop. Existing pumps have an average pore diameter of 0.8-1.2 microns. In addition, the existing ceramic pump element has a thickness of 3-4mm and a camber of 1.4-2. 0. A typical conventional electric energy pump has a thickness of 2.5 mm, and can generate a flow rate of 25 ml / min at a voltage of 100 V and a maximum pressure of 1. 00 Atm. In comparison, the thickness of the pump element is reduced by 100 times; the degree of curvature is improved by more than 3 factors; and the micropore diameter is reduced by three times. The reduction of these three factors enables the millet device of the present invention to be operated at a voltage that is ten times lower, and still generates a flow that is ten times larger. The pump element of the present invention can be operated under the following reduced conditions: the diameter of the micro-aperture; the thickness of the pump element; and the curvature of the pump element.

200416349 五、發明說明(5) 第1 A圖說明本發明泵1 〇 〇之較佳實施例。泵1 〇 〇包括泵元 件或泵體1 0 2及一支撐元件1 〇 4。泵元件1 〇 2較佳包括一矽 薄層具有圓筒洞之較密陣列,以微孔隙1 1 0代表。或‘者, 微孔隙由其他適當金屬製成。泵元件之厚度較佳為丨0毫微 米至1毫米,微孔徑1丨〇之直徑為0 ·丨_ 2 〇 2毫微米之範圍。 如圖1及2所示,泵元件102由支撐元件1〇4支撐,支撐元件 有較大洞之較少之密度陣列,或支撐孔隙1 〇 8。支撐元件 1 0 4提供泵元件1 〇 2之機械支撐,其厚度至少為3 〇 〇毫微 米。支撐元件1 0 4較佳有4 0 0毫微米之厚度,支撐孔隙j 〇 8 為至少1 0 0¾微米之厚度,其他厚度亦可考慮。第1 A圖之 支撐結構1 0 8之說明僅為一種構型,其他幾何形狀亦可使 用以平衡容易製造之機械力。此種備選結構包括材料之蜂 槽袼,材料之方形格,蜘蛛網之方形格或其它結構可平衡 製造之機械力者。第1 B圖說明方形格結構丨〇 〇,之一例。、 第2圖說明本發明之泵1 〇 〇剖面圖。如第2圖所示,泵元 件1 0 2包括微孔隙1 1 〇之密陣列及支樓元件1 〇 &連接至泵元 件1 0 2,支撐元件1 〇 4包括支撐結構陣列丨〇 6。微孔隙丨丨〇自 底表面114通過泵元件102至其頂表面U2。微孔隙11〇將液 體自底表面114通至泵元件1〇2之頂表面112,如第2圖所 不。本發明之泵100中所用之液體較佳為水,以一離 衝器控制PH及液體之傳導率。其他液體亦可使用,包括 =限於丙I同,6 af,曱醇,酒精,乙醇,有其他添加劑: 水,及其混合物。根據本發明,其他適合之液體亦 慮。 ^200416349 V. Description of the invention (5) Figure 1A illustrates a preferred embodiment of the pump 100 of the present invention. The pump 100 includes a pump element or a pump body 102 and a support element 104. The pump element 102 preferably comprises a dense array of thin layers of silicon with cylindrical holes, represented by micropores 110. Or, 'the micropores are made of other suitable metals. The thickness of the pump element is preferably in the range of 0 nm to 1 mm, and the diameter of the micro-aperture 1 in the range of 0 nm to 2 nm. As shown in Figs. 1 and 2, the pump element 102 is supported by a support element 104, which has a smaller density array of larger holes, or supports 108. The support element 104 provides mechanical support for the pump element 102 and has a thickness of at least 300 nanometers. The supporting element 104 preferably has a thickness of 400 nm, and the supporting aperture j 08 is at least 100 μm in thickness, and other thicknesses can also be considered. The description of the supporting structure 108 in Fig. 1A is only one configuration, and other geometries can also be used to balance mechanical forces that are easy to manufacture. Such alternative structures include beehives of materials, square grids of materials, square grids of spider webs, or other structures that can balance the mechanical forces of manufacture. FIG. 1B illustrates a square lattice structure, one example. Fig. 2 illustrates a sectional view of the pump 100 in the present invention. As shown in FIG. 2, the pump element 102 includes a dense array of micropores 110 and supporting elements 10 and is connected to the pump element 102, and the supporting element 104 includes an array of supporting structures. The micropores pass from the bottom surface 114 through the pump element 102 to its top surface U2. The micropores 110 pass the liquid from the bottom surface 114 to the top surface 112 of the pump element 102, as shown in Fig. 2. The liquid used in the pump 100 of the present invention is preferably water, and an ionizer is used to control the pH and the conductivity of the liquid. Other liquids can also be used, including: limited to propyl I, 6 af, methanol, alcohol, ethanol, and other additives: water, and mixtures thereof. Other suitable liquids are also contemplated according to the present invention. ^

第12頁 200416349 五、發明說明(6) 支撐結構1 0 6在預定位置連接在泵元件1 〇 2之底表面 i〇4。此預定位置與泵1〇〇之壓力差及通過泵元1〇 2之液體 流速有關。每一支撐元件1 〇 2之間,有一支撐孔隙1 〇 8,液 體通過孔隙108進入泵元件1〇2‘之底表面1〇4中之孔隙 11 〇。自底部孔隙11 〇流出之液體通過每一孔隙之通道,經 栗元件1 0 2之頂表面1 1 2之開口排出。雖然所述液體自底表 面1 1 4流至泵元件1 0 2之頂表面1 1 2,應瞭解,反向電壓可 使液體以另一方向流動。 液體在電滲透方法之下通過泵元件1 0 2,泵元件1 0 2被其 加一電位差之電場。電極3 1 6 (第3圖之步進6 )置於泵元件 1 〇 2之頂表面1 1 2及底表面1 1 4,故頂表面1 1 2與底表面1 1 4 間之電位差可驅動自支撐結構1 〇 8流過微孔隙1 1 〇,並由泵 元件1 0 2之頂表面1 1 2流出。或者,電極3 1 6與泵元件1 〇 2之 頂表面1 1 2及底表面1 1 4有一預定距離。雖然電滲透法已稍 加說明’此方法在此技藝中甚為知名,因此不加詳述。 參考第2圖,泵元件中之微孔隙甚短(丨〇 — 2 〇毫微米),直 及窄(0 · 2 - 0 · 5毫微米)。或者,微孔隙不平行及#直的, 如第5 B圖所示。微孔隙1 1 〇之構型可使本發明之泵較習知 之電動能泵產生相當大之流量,及較低所需之壓力。 理論上’流速與壓力差之增加係因為微孔直徑a,彎曲 度r及泵元件10 2厚度降低之故。此已在公式(3),(4)中 顯示。如公式(3 )所示,微孔隙1 1 〇中彎曲度^之降低可增 加液體通過微孔隙11 0之流速。此外,泵元件1 〇 2厚度L之 降低,根據公式(3 ),亦增加通過微孔隙π 〇液體之流速。Page 12 200416349 V. Description of the invention (6) The supporting structure 106 is connected to the bottom surface i04 of the pump element 102 at a predetermined position. This predetermined position is related to the pressure difference of the pump 100 and the liquid flow rate through the pump element 102. Between each support element 102, there is a support aperture 108, and the liquid passes through the aperture 108 and enters the aperture 11 in the bottom surface 104 of the pump element 102 '. The liquid flowing out from the bottom hole 110 is passed through the passage of each hole and discharged through the opening of the top surface 112 of the pump element 102. Although the liquid flows from the bottom surface 1 1 4 to the top surface 1 12 of the pump element 102, it should be understood that a reverse voltage may cause the liquid to flow in the other direction. The liquid passes through the pump element 102 under the electroosmosis method, and the pump element 102 is subjected to an electric field having a potential difference. The electrode 3 1 6 (step 6 in FIG. 3) is placed on the top surface 1 1 2 and the bottom surface 1 1 4 of the pump element 10, so the potential difference between the top surface 1 1 2 and the bottom surface 1 1 4 can be driven The self-supporting structure 108 flows through the micropores 11 and flows out from the top surface 11 of the pump element 102. Alternatively, the electrode 3 1 6 is at a predetermined distance from the top surface 1 12 and the bottom surface 1 1 4 of the pump element 102. Although the electroosmosis method has been explained a little ', this method is well known in the art, so it will not be described in detail. Referring to Figure 2, the micropores in the pump element are very short (丨 0-20 nm), straight and narrow (0 · 2-0 · 5 nm). Alternatively, the micropores are not parallel and #straight, as shown in Figure 5B. The microporous 1 1 0 configuration allows the pump of the present invention to produce a relatively large flow rate and a lower required pressure than conventional electric energy pumps. Theoretically, the increase in the flow velocity and pressure difference is due to the decrease in the diameter of the microhole a, the curvature r, and the thickness of the pump element 102. This is shown in equations (3), (4). As shown in formula (3), a decrease in the curvature ^ in the micropores 110 can increase the flow velocity of the liquid through the micropores 110. In addition, the decrease in the thickness L of the pump element 102 also increases the flow velocity of the liquid through the micropore π 0 according to formula (3).

第13頁 200416349 五、發明說明(7) 此外如A式(4 )所τ ’微孔隙直a &之降低 流過泵元件1 0 2之壓力羔之晉。 、際上增加液體 i刀差之里。雖然流速, 發明之泵1〇0之構型而增加,流速及壓力差ί力差△ P因本 之量,而降低操作泵100所需之電壓。 可保持在適當 本發明之泵可用不同方法製造。 录3 0 0之較佳實施例,第3圖所使示弟=兄明製以發明 影/蝕刻步驟而製造, 〜泵係由一系列之微 舻j土與竑 士用於傳統積體電路掣、生 . 車乂仫貝施例中,備有—基二坆一杈。在 褚梆成夕- ’、或者,日日圓由標準石夕基板所制 且古 預形成之虱化物及多晶矽層。 瑕所製,具有 化物或氮化物之組入n l者 下所討論,使用氧 不同之钱刻步驟之雷阻+ * J; 麵合層可提供 ^ ^ ^ 知之包阻。此案例下,餘刻步驟vr不每絲而 不需專心定時故 二立山 4 乂知可予,、施而 丄贫他 終止’而產生一易於控制尺寸之接人戶。 如弟3圖所示,萝生了之接口盾 m^ 衣仏泵3 0 0之車父^土方法在支撐元件3 0 4中 Ξ ^ Λ刻特徵以形成結構3 0 6及支撐孔隙308開始,如 I _^所示。圖案步驟2較佳利用傳統光抗蝕劑之曝 及圖案化步驟。因利用光抗|虫劑形成預定圖案已 ^^知’該步驟不再討論。步驟3中,在晶圓3 0 1上實施 氮氣酸餘^刻,以清除支撐結構3 0 6與泵元件3 0 2之底表面 3 1 2間之氧化物3 0 3。HF姓刻步驟必須適當定時以便有足夠 日守間貝^鄰近支撐結構3 0 6之泵元件表面之曝光,但不能 太長以防泵元件3 0 2與之撐元件3 0 6分離。 步驟4中,如第3圖所示,微孔隙3丨〇及對應通道由電漿 1虫刻技術形成。電漿形成之微孔隙3 1 0應平行且直。Page 13 200416349 V. Description of the invention (7) In addition, as shown in the formula (4), τ 'micropores a & are reduced, and the pressure flowing through the pump element 102 is reduced. In the end, the increase of liquid i is within the range of the knife. Although the flow rate is increased by the invention's configuration of the pump 100, the flow rate and the pressure difference, the force difference ΔP, are reduced by the amount of the cost, which reduces the voltage required to operate the pump 100. Keeping in place The pump of the present invention can be manufactured in different ways. The preferred embodiment of record 3 0 is shown in Fig. 3. The brother = Bei Ming system is manufactured by the invention shadowing / etching process. The pump is made of a series of micro-soils and warriors for traditional integrated circuits. 、、 生. In the example of the car shell, there is a base—a fork and a fork. In Chu Xi Cheng Xi-', or Japanese and Japanese yen made of standard Shi Xi substrate and ancient pre-formed lice and polycrystalline silicon layer. Defects made by the combination of compounds or nitrides as discussed in the following, using the lightning resistance of different steps of oxygen engraving + * J; the surface layer can provide ^ ^ ^ known encapsulation. In this case, in the rest of the step, vr does not need to focus on the timing, so Er Li Shan 4 knows what can be done, and it is necessary to terminate it, resulting in an easily accessible size household. As shown in the figure 3, the interface of the born shield m ^ The driver of the clothes pump 3 0 0 ^ The soil method in the support element 3 0 4 ^ Λ engraved features to form the structure 3 06 and the support aperture 308 began , As shown by I _ ^. The patterning step 2 preferably uses a conventional photoresist exposure and patterning step. Since the predetermined pattern is formed by using the photoresistance | insecticide, this step is no longer discussed. In step 3, a nitrogen acid etching is performed on the wafer 301 to remove the oxide 303 between the support structure 3 06 and the bottom surface 3 1 2 of the pump element 3 02. The HF surname engraving step must be properly timed so that there is sufficient exposure on the surface of the pump element adjacent to the supporting structure 3 06, but not too long to prevent the pump element 3 0 2 from being separated from the supporting element 3 6. In step 4, as shown in FIG. 3, the micropores 3 and 0 and the corresponding channels are formed by the plasma 1 insect engraving technique. The micropores 3 10 formed by the plasma should be parallel and straight.

第14頁 200416349 五、發明說明(8) 一旦微孔隙3 1 0形成後,在泵3 〇 〇上實施擴散氧化步驟, 因而所有泵3 0 0之表面包括泵元件3 〇 2及支撐元件3 〇 4之表 面均以氧化層3 1 8予以氧化。氧化層3丨8較佳為s丨〇2,形成 純化氧化物’其可防止因微孔隙3丨〇之開口間之不同電位 差之電流旁路電動能滲透泵效應。此外,氧化物層3丨8之 生長步驟可使微孔隙31 0之通道變窄,因為s丨〇 2由氧化矽 以02在高溫下形成,如步驟6所示。因此,甚窄之微孔隙 可用此氧化步驟形《,較利用電漿蝕刻之蝕刻微影為佳。 在一實施例中,氧化後。微孔隙直徑小於〇· ,因此, 泵兀件3G2有-高孔隙|,因為密集之微孔隙31()於立中。Page 14 200416349 V. Description of the invention (8) Once the micro pores 3 1 0 are formed, the diffusion oxidation step is performed on the pump 3 0. Therefore, the surfaces of all pumps 3 0 0 include the pump element 3 2 and the support element 3 2. The surface of 4 is oxidized with an oxide layer 3 1 8. The oxide layer 3 丨 8 is preferably s 丨 〇2, which forms a purified oxide ’, which can prevent the electric current osmotic pump effect from bypassing the electric current due to the different potential difference between the openings of the micropores 3 丨 〇. In addition, the growth step of the oxide layer 3 丨 8 can narrow the channels of the micropores 31 0 because s 2 0 2 is formed by silicon oxide at 02 at a high temperature, as shown in step 6. Therefore, very narrow micropores can be shaped using this oxidation step, which is better than etching lithography using plasma etching. In one embodiment, after oxidation. The micropore diameter is less than 0. Therefore, the pump element 3G2 has -high porosity, because the dense micropores 31 () are in the middle.

支撐兀件3 0 4有一大支撐孔隙3〇8,其提供一 過泵體3 0 2之液體流動,但仍提供一適當之結構支撐“因、 2,在直徑遽微米之石夕孔隙中之〇·25毫微 使孔直徑降低0 · 5毫微米。此一方法可丨、,+ X J 制下實施。矽閘氧化物之生長在本技蓺^極佳之&厚度控 定。作為最後步驟,在泵元件1 0 2上形"亟具特徵及可決 節稍後討論。 ^成電極。電極之細 第4圖說明製造本發明之電動能泵4〇〇之 ^ 圖之另一方法之設計可使urn刻步驟自一另一方法。第4 之自行終止,此方法可消除連接支樓結2終止。因此步驟 之定時問題。此另一方法以提供標準^曰j 0 6至泵元件4 0 2 始,如步驟1 0所示。次一步驟包括沉積θ9 ^或基板4 0 1開 4 0 3,如0 · 5毫微米之矽氮化物於板4 〇 預疋量之接合材料 層,如步驟1 2所示。或者使用任何接合項表面形成接合 σ材料而不用矽氮化 200416349 五、發明說明(9) 物。矽氮化物層於是自基板4 〇 1之頂表面圖案化及蝕刻於 預定位置’視泵4 0 0之所需之結構支稱而定。餘刻後,接 合材料之餘留部分作為校正記號4 0 5以校正支撐結構4 〇 5與 其適當位置,如步驟1 4所示。此外,實施化學機械拋光 (CMP)方法以光接合材料40 3之表面。 如弟4圖之步驟1 6所示’一氧化物層4 0 7加在基板4 〇 1之 頂表面4 1 4,該氧化物層4 0 7在校正記號4 〇 5上生長。或 者’氧化物層4 0 7不加在校正記號4 0 5上。多石夕層4 〇 9在表 面氧化物層4 0 7上形成,如步驟1 8及2 0所示。多石夕層4 〇 9較 佳為以蠢晶方法生長。多矽層4 0 9之厚度較佳為1 〇 — 2 〇毫微 米。 其-人,袓數個微孔隙4 1 0在多石夕層409中形成,如第4圖 之步驟20所示。微孔隙4 1 0可利用第一方法所提之電漿蝕 刻形成。一旦微孔隙4 1 0已在多石夕層4 0 9中形成,以電漿;|虫 刻支樓結構4 0 6及孔隙4 0 8於基板4 0 1之外,方法繼續以形 成支撐孔隙4 0 8及支撐結構4 0 6。自步驟2 2起,支撑結構 4 0 6已在接合層中每一校正記號4 〇 5形成。或者,支撐結構 4 ◦ 6及孔隙4 0 8在微孔隙4 1 0形成前形成。一旦微孔隙4 1 〇及 支撐結構4 0 6已形成,全泵4 0 0較佳在HF中浸潰以移除所有 夕石夕層4 0 9與基板4 0 1頂表面間之氧化物。如步驟2 4所示。 此Hm刻步驟24亦開啟微孔隙41 〇與支撐孔隙4〇8間之介 面。如上所述,在方法之優點為HF钱刻步驟自行終止,因 接合材料在HF方法期間未被攻擊。因此,支撐結構4 〇 6可 保證連接至泵元件40 2而不論栗4 0 0暴露在HF中多久。The supporting element 3 0 4 has a large supporting hole 3 08, which provides a liquid flow through the pump body 3 2 2 but still provides a proper structural support. 〇25nm reduces the hole diameter by 0.5nm. This method can be implemented under the system of + XJ. The growth of silicon gate oxide is very good in this technology & thickness control. As the final Step, forming on the pump element 102 has "characteristics" and "discussions" will be discussed later. ^ Forming an electrode. Figure 4 of the electrode details another method of manufacturing the electric energy pump 400 of the present invention. The design can make the urn step from one method to another. The fourth method can terminate itself. This method can eliminate the termination of the connection to branch node 2. Therefore, the timing of the steps. This other method provides a standard ^ j 0 6 to the pump. The component starts from 0 2, as shown in step 10. The next step includes depositing θ9 ^ or substrate 4 0 1 4 4 3, such as silicon nitride of 0.5 nm on the board 4 疋 amount of bonding material Layer, as shown in step 12. Or use any joint to form a joint σ material instead of silicon nitride 200416349 Description of the invention (9). The silicon nitride layer is then patterned and etched from the top surface of the substrate 401 at a predetermined position 'depending on the required structural specifications of the pump 400. After a while, the bonding material is The remaining part is used as a correction mark 4 0 5 to correct the supporting structure 4 05 and its appropriate position, as shown in step 14. In addition, a chemical mechanical polishing (CMP) method is performed to photo-bond the surface of the material 40 3. As shown in Figure 4 As shown in step 16 of the above, 'an oxide layer 407 is added on the top surface 4 1 4 of the substrate 4 〇1, and the oxide layer 407 is grown on the calibration mark 405. Or' the oxide layer 4 0 7 is not added to the correction mark 405. The polystone layer 4 09 is formed on the surface oxide layer 4 07, as shown in steps 18 and 20. The polystone layer 4 009 is preferably Stupid growth method. The thickness of the polysilicon layer 409 is preferably 10-20 nm. It is formed by several micropores 4 1 0 in the polysilicon layer 409, as shown in FIG. 4. Step 20 is shown. The micro-pores 4 1 0 can be formed by plasma etching mentioned in the first method. Once the micro-pores 4 10 have been formed in the rocky layer 4 0 9, the plasma is used; The insect-engraved support structure 4 06 and the holes 4 0 8 are outside the base plate 4 0 1, and the method continues to form the supporting holes 4 0 8 and the supporting structure 4 0 6. Since step 22, the supporting structure 4 0 6 has been Each correction mark 4 0 5 is formed in the bonding layer. Alternatively, the support structure 4 ◦ 6 and the pores 4 0 8 are formed before the formation of the micro pores 4 1 0. Once the micro pores 4 1 0 and the support structure 4 0 6 have been formed, all The pump 400 is preferably immersed in HF to remove all oxides between the stone layer 409 and the top surface of the substrate 401. As shown in step 24. This Hm engraving step 24 also opens the interface between the micro-pores 41 0 and the supporting holes 408. As mentioned above, the advantage of the method is that the HF money-cutting step terminates on its own since the bonding material is not attacked during the HF method. Therefore, the support structure 406 can be guaranteed to be connected to the pump element 402 regardless of how long the pump 400 is exposed to the HF.

弟16頁 200416349 五、發明說明(ίο) 〜—- 其次,結構被氧化以形成氧化物層3丨8於泵元 =構404之所有…,以鈍化表面及降低微孔=二 圖5說明本發明製造泵之另一方法。在此方法中, 一標準矽晶圓基板501,如步驟3〇所示。此外,如牛 戶2 =,玻璃材料5 0 2黏接在晶圓501之一側,較佳為"晶圓 之頂側。在此實施例中,玻璃材料5〇2較佳 究材料以,其對電流為絕緣。此材料較佳包括== 或硼^玻璃。其他型玻璃或陶瓷亦可使用。玻璃材料5 利用向溫熔化法黏接在晶圓5〇〗上,其他方法亦可 此外’化學機械拋光(CMP)或其它方法可用於玻璃材 上,>以研磨平滑玻璃材料5〇1之表面至一預定厚度,約 1 0 0毫微米。或者,玻璃材料5 〇 2可拋光及平滑至其他…、 度。 '、予 如第5A圖之步驟34所示,支撐結構506以蝕刻法如電將 蝕刻形成在晶圓5 〇丨上。或者,可用其它方法形成支^ ς 構5 0 6。支撐結構5〇6係將基板5()1與玻璃材料5〇2向下#反° 形成’於是基板5 0 1面向上。其次,實施蝕刻方法於基 1 ’因而支撐結構5 〇 6及及對應支撐孔隙5 〇 8形成。應、、主 意’支撐結構之拋光及形成步驟可以任何順序實施,抛/ 可在支揮結構形成前或之後實施。接著,微孔隙5 1 〇可用“ 電漿蝕刻法形成,因此微孔隙5 1 0在玻璃材料之頂及底李 面間形成,及有一直及平行之構型。或者如第5β圖所-示' 玻璃材料5 0 2内可能已有不平行及複雜形狀,微孔隙亦可’16th page 200416349 V. Description of the invention (ίο) ~ —- Secondly, the structure is oxidized to form an oxide layer 3 丨 8 in the pump element = structure 404 ... to passivate the surface and reduce micropores = 2 Figure 5 illustrates this Invented another method of manufacturing a pump. In this method, a standard silicon wafer substrate 501 is shown in step 30. In addition, if the cow 2 =, the glass material 502 is adhered to one side of the wafer 501, preferably the top side of the wafer. In this embodiment, the glass material 502 is preferably a material that is insulated from current. This material preferably includes == or borosilicate glass. Other types of glass or ceramics can also be used. The glass material 5 is adhered to the wafer 50 by a temperature melting method. Other methods can also be used. 'Chemical mechanical polishing (CMP) or other methods can be used on the glass material. ≫ The surface to a predetermined thickness, about 100 nm. Alternatively, the glass material 502 can be polished and smoothed to other degrees. 'As shown in step 34 of FIG. 5A, the support structure 506 is etched on the wafer 50 by etching, such as electricity. Alternatively, other methods can be used to form the branch structure. The supporting structure 506 forms the substrate 5 () 1 and the glass material 502 downwardly, so as to form the substrate 501 so that the substrate 501 faces upward. Next, an etching method is performed on the substrate 1 ′ and thus the supporting structure 506 and the corresponding supporting pores 508 are formed. The polishing and forming steps of the support structure can be implemented in any order, and the polishing / forming can be performed before or after the support structure is formed. Next, the micropores 5 1 0 can be formed by “plasma etching”, so the micropores 5 10 are formed between the top and bottom surfaces of the glass material, and have a straight and parallel configuration. Or as shown in FIG. 5β 'Glass material may have non-parallel and complex shapes in 5 02, and micropores are also possible'

200416349 五、發明說明(11) 由#刻法以外方法形成。 一旦泵元件3 0 2及支撐元件3 〇 4已以上述方法形成,金屬 應沉積在泵元件3 0 2之外表面’因而在泵元件之表面少形 成電極3 1 6,如第3圖之步驟6所示。電極3丨6之材料應在電 解方法中不被分解。電極31 6之較佳材料包括鉑及石墨; 其他材料亦可,視被泵之液體成分而定。電極31 6以不同 方法在泵元件3 0 2之外表面形成。電極3丨6較佳以蒸氣,化 學氣相沉積(CVD)或電漿蒸氣沉積(PVD)方法在泵元件3〇2 之外表面形成。或者,電極31 6以螢幕或接觸印刷在泵元 :3 0 2之外側形成。或者,一電極幕(未示出)可置於泵元 3 0 2之附近。或者,一引線耦合至泵元件之每一外側。 應,意,本發明電極耦至泵元件不限於上述之方法。 f ^圖說明一冷卻系統以冷卻通過熱放射裝置之液體。 弟6圖所示,系統為閉合迴路,液體流至一元件以待冷 丨’如微處理器6 0 2,處理器盥液辦門夕舳絲较士甘欲 生。離開微處理器6 0 2後,液濟^間之熱轉移由其發 散熱器6 04,液體在升南之溫度59度〇並進入 C^L Ψ ^ . 在/、中〜σΡ至較低溫度44度C液體以44度 ^器m進入本發明之“〇〇。再參考請,在泵 泵出、雨,岛部之液體進入支撐孔隙10 8 ’並由上述之滲透法 負電二隙11 〇。加在泵元件102之電壓造成液體中之 弓丨】加在泵元件102之頂表面上之正電壓所吸 過彳& 1 ^ 1 ι^70件頂表面及底表面間之電壓差驅使液體通 相液體因而以進入果之溫度(“度。 J之/皿度(44度C)離開泵1〇〇。200416349 V. Description of the invention (11) Formed by methods other than # 刻 法. Once the pump element 3 02 and the supporting element 3 04 have been formed in the above-mentioned method, metal should be deposited on the outer surface of the pump element 3 02 'so that fewer electrodes 3 1 6 are formed on the surface of the pump element, as shown in the step of FIG. 3 6 shown. The materials of the electrodes 3 and 6 should not be decomposed in the electrolytic method. Preferred materials for the electrode 316 include platinum and graphite; other materials are also possible, depending on the liquid composition of the pump. Electrodes 3 16 are formed on the outer surface of the pump element 3 02 in different ways. The electrodes 3 and 6 are preferably formed on the outer surface of the pump element 30 by a vapor, chemical vapor deposition (CVD) or plasma vapor deposition (PVD) method. Alternatively, the electrodes 316 are formed on the screen or the contact printing on the outside of the pump element: 302. Alternatively, an electrode curtain (not shown) may be placed near the pump element 302. Alternatively, a lead is coupled to each outside of the pump element. It should be understood that the coupling of the electrode of the present invention to the pump element is not limited to the method described above. f ^ illustrates a cooling system for cooling a liquid passing through a heat radiation device. As shown in Figure 6, the system is a closed loop, and the liquid flows to a component to be cooled. As in the microprocessor 602, the processor's liquid bath is more comfortable. After leaving the microprocessor 602, the heat transfer between the liquid and the heat sink is performed by the radiator 6 04, and the temperature of the liquid is 59 degrees in the south, and enters C ^ L Ψ ^. In /, medium ~ σP to lower At a temperature of 44 ° C, the liquid enters the "〇〇" of the present invention at a temperature of 44 ° C. Please refer to it again. After the pump is pumped out and rained, the liquid at the island enters the support pore 10 8 ′ and is negatively charged by the above-mentioned permeation method. 〇. The voltage applied to the pump element 102 causes a bow in the liquid 丨】 The voltage difference between the top surface and the bottom surface of the 70 element is absorbed by the positive voltage applied to the top surface of the pump element 102 The liquid is driven to pass through the phase and the liquid thus leaves the pump 100 at a temperature (“degree. J./degree. 44 degrees C) of entering the fruit.

弟18頁 200416349 五、發明說明(12) 本發明之泵可產生足夠之流量,以單相液體之足夠熱斥 退係可能的。以1 0 0 W熱源操作之現有泵需要二相熱熱拒 斥,而單相液體可捕捉及拒斥較低之溫度,因此,可消除 與穩定及二相系統中相位改變相關之問題。此外,操作電 壓降低至一低位準可使利用電子系統中之現有電壓,而無 需相位間之轉換。 本發明之泵可以複雜之液體操作,如抗凍劑或有添加劑 之水以改進熱捕捉及拒斥性能。如上所述,電流經化學反 應器通過液體,因而電流通過電動能泵1 0 0之電極3 1 6 (第3 圖)。在純水中,此一反應導致電解,而產生Η氣體於其他 電極3 1 6。在更複雜之液體中,此一反應導致更複雜之副 產品,多數無法在密封之系統中再組合。在電極3 1 6之化 學反應如有足構能量可用時,以電極間之電位差方式發生 以克服電極電荷之親和性。以水而言,此等過電位可增加 電壓約4 V。對其他化學及添加劑言,此等過電位變化及不 同。 如一電動能泵以高電壓操作,則此過電位甚小,可在分 析中予以忽略。但低電壓操作時,過電位自加至泵元件 1 0 2之減除,因而構成電位差於泵媒介中,其降低之量等 於在二電極反應之過電位之和。以多成分液體言,如所加 電壓夠大以克服所有反應之過電位,電化學反應與液體之 所有成分有關。但以低電壓操作可僅使液體某成分發生電 化學反應。 例如,如水包括添加劑而展現在低溫時床結,添加劑之Younger page 18, 200416349 V. Description of the invention (12) The pump of the present invention can generate enough flow to repel the system with sufficient heat of single-phase liquid. Existing pumps operating with a 100 W heat source require two-phase thermal rejection, while single-phase liquids can capture and reject lower temperatures, thus eliminating problems related to stability and phase changes in two-phase systems. In addition, lowering the operating voltage to a low level allows the existing voltages in the electronic system to be utilized without the need for phase-to-phase switching. The pump of the present invention can be operated with complex liquids, such as antifreeze or water with additives to improve heat capture and rejection performance. As described above, the electric current passes through the liquid through the chemical reactor, and thus the electric current passes through the electrode 3 1 6 of the electric energy pump 100 (Fig. 3). In pure water, this reaction leads to electrolysis, which generates tritium gas to other electrodes 3 1 6. In more complex liquids, this reaction results in more complex by-products, most of which cannot be recombined in a sealed system. When the chemical reaction of the electrode 3 1 6 has sufficient structural energy, it occurs as a potential difference between the electrodes to overcome the affinity of the electrode charge. In the case of water, these overpotentials can increase the voltage by about 4 V. For other chemicals and additives, these overpotential changes and differences. If an electric energy pump is operated at high voltage, this overpotential is very small and can be ignored in the analysis. However, during low voltage operation, the overpotential is automatically subtracted from the pump element 102, thus forming a potential difference in the pump medium, which is reduced by the sum of the overpotentials reacted at the two electrodes. In the case of multi-component liquids, if the applied voltage is large enough to overcome the overpotential of all reactions, the electrochemical reaction is related to all components of the liquid. However, operating at low voltage can cause only a certain component of the liquid to undergo an electrochemical reaction. For example, if water includes additives and appears to form at low temperatures,

第19頁 200416349 五、發明說明(13) 過電位較純水 換時,所加電 反應。此一情 (僅涉及H2,0 之硃低壓操作 率裝置在低於 卻。能抑制液 晴。此等添加 供此等添加 通常大於理論 化,形狀,粗 過電位之值可 劑型式之行為 統型式有關。 與大多數熱 可重疊或混合 至臨界濃度在 有二個二極體 壓為混合氣濃 流。在本發明 劑,僅能將泵 加劑之過電位 位高於水,電 此外,添加 之過電位高甚多。在電滲透方法中水離子交 壓範圍中僅有低電壓時,僅有水參與電極之 況之優點為,電化學反應可被保持為簡單 2),即使液體中含複雜之化學組合。本發明 之優點為其能產生適當流量及壓力,供高功 如抗凍劑之有用添加劑之過電位之電壓下冷 體冰點目的之添加劑舉例如,環己酮及乙_ 劑為低濃度可溶於水,且為良好性能。 化學劑之電極電位係自理論計算。但過電位 上最小電極電位之2 - 3倍。此外,過電位為 度及電極/電解質介面之電流密度之函數。 為某電極材料/電解質對而預估,其與添加 有關;添加劑之特別濃度及使用添加劑之系 物理特性 氣成分之 單元之電 並聯之電 度之函數 中,具有 中之小部 為大。此 化學反應 劑在冰點 一樣, 加權效 流上之 路類比 。低門 較水為 分電流 粟之操 仍不致 測定常 混合氣 應。反 效應極 ,其中 限之二 南之過 分流。 作電壓 涉及添 數上之 之電解電流並非線性 之,低濃度之添加劑 小。此一情形可與具 每一二極體之門限電 極體趨於用盡所有電 電位之低濃度添加 即使施加之電壓較添 可相當高,如其過電 加劑。 效應似與臨界濃度無Page 19 200416349 V. Description of the invention (13) When the overpotential is changed with pure water, the electricity is applied. This situation (only related to H2,0, Zhu low-voltage operating rate device is lower than can be suppressed. Liquid additions can be suppressed. These additions for these additions are usually larger than the theoretical, shape, rough overpotential value can be the behavior of the dosage system Related to the type. Most of the heat can be overlapped or mixed to a critical concentration at a pressure of two diodes as a concentrated gas mixture. In the agent of the present invention, the overpotential of the pump dosing agent can only be higher than water. The added overpotential is very high. When there is only a low voltage in the water ion cross-pressure range in the electroosmosis method, the advantage of only water participating in the electrode is that the electrochemical reaction can be kept simple 2), even in liquid Contains complex chemical combinations. The advantage of the present invention is that it can generate an appropriate flow rate and pressure for the purpose of cold body freezing point under the potential of high potential such as useful additives of antifreeze additives. For example, cyclohexanone and acetone are soluble in water at low concentrations. , And for good performance. The electrode potential of the chemical agent is calculated from theory. However, the minimum electrode potential is 2 to 3 times the overpotential. In addition, the overpotential is a function of degrees and the current density of the electrode / electrolyte interface. It is estimated for an electrode material / electrolyte pair, which is related to the addition; the special concentration of the additive and the system in which the additive is used. This chemical reactant has the same freezing point as the analogy on the weighted effect path. The lower gate is more current than the water. The negative effect is extremely extreme, of which the limit is two and the south is diverted. The operating voltage involves a few non-linear electrolytic currents, and low-concentration additives are small. This situation can be added with a low concentration of the threshold electrode body with each diode tending to exhaust all potentials, even if the applied voltage is relatively high, such as its over-charge additive. The effect seems to be the same as the critical concentration

IIII

第20頁 200416349 五、發明說明(14) 關。因此,加入低濃度之如環乙醇或乙晴或其它添加劑, 並有冰點上之有益效應而不影響電極之電化學反應。因 此,最佳之添加劑為有高冰點測定常數之可溶之化學物 質,其在低濃度時亦有效。 本發明已以併入細節之特殊實施例說明,以期對本發明 結構及作業原理有一瞭解。此處之特殊實施例與細節之參 考無限制本發明申請專利範圍之範疇之意。對精於此技藝 人士言,可在選擇之實施例作修改以供說明,而不致有悖 本發明之精神與範疇。Page 20 200416349 V. Description of Invention (14) Off. Therefore, adding low concentrations such as cycloethanol or acetonitrile or other additives has the beneficial effect of freezing point without affecting the electrochemical reaction of the electrode. Therefore, the best additives are soluble chemicals with high freezing point constants, which are also effective at low concentrations. The present invention has been described with specific embodiments incorporating details in order to have an understanding of the structure and operation principle of the present invention. The reference to the specific embodiments and details herein is not intended to limit the scope of the patent application scope of the present invention. To those skilled in the art, modifications can be made in the selected embodiments for explanation without departing from the spirit and scope of the present invention.

第21頁 200416349 圖式簡單說明 第1 A圖說明本發明較佳實施例之泵元件之透視圖。 第1 B圖說明本發明另一實施例之泵元件之透視圖。 第2圖說明本發明較佳實施例之泵剖面圖。 第3圖說明本發明較佳實施例之製造泵之較佳方法。 第4圖說明本發明製造泵之另一較佳方法。 第5A圖說明製造本發明之泵之另一方法。 第5 B圖說明具有本發明非平行微孔隙之玻璃材料之另一 實施例。 第6圖說明包拮本發明泵之閉合系統迴路。Page 21 200416349 Brief Description of Drawings Figure 1A illustrates a perspective view of a pump element according to a preferred embodiment of the present invention. Figure 1B illustrates a perspective view of a pump element according to another embodiment of the present invention. Figure 2 illustrates a cross-sectional view of a pump according to a preferred embodiment of the present invention. FIG. 3 illustrates a preferred method of manufacturing a pump according to a preferred embodiment of the present invention. Figure 4 illustrates another preferred method of manufacturing a pump according to the present invention. Figure 5A illustrates another method of manufacturing the pump of the present invention. Figure 5B illustrates another embodiment of a glass material having non-parallel microvoids of the present invention. Fig. 6 illustrates a closed system circuit including a pump of the present invention.

元件符號說明: 112 頂 表 面 114 底 表 面 300 泵 301 晶 圓 302 基 板 晶 圓.泵元件 303 氧 化 物 304 支 撐 元 件 306 支 撐 結 構 308 支 撐 孔 隙 310 微 孔 隙 312 底 表 面 316 電 極 318 氧 化 層 400 泵 401 標 準 矽 晶圓 或基板 402 泵 元 件 403 接 合 材 料 404 支 撐 結 構 405 校 正 記 號 406 支 撐 結 構 407 氧 化 物 層 408 支 撐 孔 隙 409 多 矽 層 410 微 孔 隙 414 頂 表 面 501 晶 圓 502 玻 璃 材 料 506 支 撐 結 構 508 支 撐 孔 隙 510 微 孔 隙 600 泵 602 微 處 理 器 604 散 熱 器Component symbol description: 112 top surface 114 bottom surface 300 pump 301 wafer 302 substrate wafer. Pump element 303 oxide 304 support element 306 support structure 308 support pore 310 micro pore 312 bottom surface 316 electrode 318 oxide layer 400 pump 401 standard silicon Wafer or substrate 402 Pump element 403 Bonding material 404 Support structure 405 Calibration mark 406 Support structure 407 Oxide layer 408 Support void 409 Polysilicon layer 410 Micropore 414 Top surface 501 Wafer 502 Glass material 506 Support structure 508 Support aperture 510 Micro Pore 600 Pump 602 Microprocessor 604 Radiator

第22頁 _Page 22 _

Claims (1)

200416349 六、申請專利範圍 1 · 一種製造一電動能泵之方法,包含以下步驟: a. 提供具有第一表面及第二表面之第一材料; b. 形成複數個毛細管通過第一材料,其中該每一毛細管包 括在基板之第一表面及第二表面之微孔隙; c. 以絕緣劑氧化第一表面及第二表面,其中每一毛細管之 内表面以絕緣劑薄膜氧化; d. 耦合電極至第一表面及第二表面,其中每一電極間產生 之電位驅動液體流過複數個毛細管。 2. 如申請專利範圍第1項之方法,進一步包含下列步驟: a. 施加氧化劑至第一材料之第二表面; b. 1¾合第二材料至氧化劑。 3. 如申請專利範圍第2項之方法,進一步包含在第二材 料中形成複數個支撐結構,其中每一支撐結構由氧化劑耦 合至第一材料。 4. 如申請專利範圍第3項之方法,進一步包含自第二表 面移除預定量之氧化劑,其中一實質量之氧化劑保留在支 撐結構與第二表面之間。 5 .如申請專利範圍第4項之方法,其中氫氟酸被施加至 將被移除之預定量之氧化劑。 6 .如申請專利範圍第2項之方法,進一步包含以絕緣劑 氧化每一支撐結構。 7 .如申請專利範圍第1項之方法,其中該複數個毛細管 由#刻法形成。 8 .如申請專利範圍第1項之方法,其中該微孔隙之直徑200416349 VI. Scope of Patent Application 1. A method for manufacturing an electric energy pump, including the following steps: a. Providing a first material having a first surface and a second surface; b. Forming a plurality of capillaries through the first material, wherein the Each capillary includes micropores on the first surface and the second surface of the substrate; c. Oxidizing the first surface and the second surface with an insulating agent, wherein the inner surface of each capillary is oxidized with an insulating film; d. Coupling the electrode to The first surface and the second surface, wherein the potential generated between each electrode drives the liquid to flow through the plurality of capillaries. 2. The method according to item 1 of the patent application scope, further comprising the following steps: a. Applying an oxidant to the second surface of the first material; b. Combining the second material with the oxidant. 3. The method according to item 2 of the patent application scope, further comprising forming a plurality of support structures in the second material, wherein each support structure is coupled to the first material by an oxidant. 4. The method of claim 3, further comprising removing a predetermined amount of oxidant from the second surface, wherein a substantial amount of the oxidant remains between the support structure and the second surface. 5. The method according to item 4 of the patent application, wherein hydrofluoric acid is applied to a predetermined amount of oxidant to be removed. 6. The method of claim 2 further comprising oxidizing each support structure with an insulator. 7. The method according to item 1 of the scope of patent application, wherein the plurality of capillaries are formed by # 刻 法. 8. The method of claim 1 in the scope of patent application, wherein the diameter of the micropores 200416349 六、申請專利範圍 為0. 1至2毫微米。 9.如申請專利範圍第1項之方法,其中該第一材料包括 一厚度尺寸為1 0毫微米至1毫米。 1 0. —種製造電動能泵之方法,包含下列步驟: a.提供具有第一表面之一基板; b ·在基板上形成複數個校正記號,其中該校正記號為第一 材料所製; c .施加第二材料至第一表面; d. 形成複數個通過第二材料之毛細管; e. 在基板之每一校正記號處形成一支撐結構,因而形成複 數個支撐結構,其中第二表面形成於每一支撐結構之間; f. 施加擴散氧化劑至第一及第二表面,其中該擴散氧化劑 被施加加至複數個毛細管内,其中第一及第二表面間之電 壓差驅動液體通過複數個毛細管。 1 I如申請專利範圍第1 〇項之方法,進一步包含施加擴 散氧化劑至每一支撐結構之一外表面之步驟。 1 2 .如申請專利範圍第1 0項之方法,進一步包含在第二 材料施加至第一表面前,施加一氧化劑至第一表面之步 驟。 1 3 .如申請專利範圍第1 2項之方法,進一步包含自第一 表面移除氧化劑之步驟。 1 4 .如申請專利範圍第1 0項之方法,進一步包含耦合裝 置以施.加第一表面與第二表面間電壓差之步驟。 1 5 .如申請專利範圍第1 0項之方法,其中該第一材料為玻200416349 6. The scope of patent application is 0.1 to 2 nm. 9. The method of claim 1, wherein the first material includes a thickness dimension of 10 nm to 1 mm. 1 0. A method for manufacturing an electric energy pump, including the following steps: a. Providing a substrate having a first surface; b. Forming a plurality of correction marks on the substrate, wherein the correction marks are made of the first material; c Applying a second material to the first surface; d. Forming a plurality of capillaries passing through the second material; e. Forming a support structure at each correction mark of the substrate, thereby forming a plurality of support structures, wherein the second surface is formed on Between each support structure; f. Applying a diffusing oxidant to the first and second surfaces, wherein the diffusing oxidant is applied to a plurality of capillaries, wherein a voltage difference between the first and second surfaces drives the liquid through the plurality of capillaries; . 1 I The method of claim 10, further comprising the step of applying a diffusion oxidant to an outer surface of each support structure. 12. The method of claim 10, further comprising the step of applying an oxidizing agent to the first surface before the second material is applied to the first surface. 13. The method according to item 12 of the patent application scope, further comprising the step of removing the oxidant from the first surface. 14. The method of claim 10, further comprising the step of coupling the device to apply a voltage difference between the first surface and the second surface. 15. The method according to item 10 of the scope of patent application, wherein the first material is glass 200416349 六、申請專利範圍 璃材料。 1 6 .如申請專利範圍第1 0項之方法,其中該第一材料為陶 瓷材料。 1 7 ·如申請專利範圍第1 0項之方法,其中該第二材料為多 晶$夕材料。 1 8 .如申請專利範圍第1 0項之方法,其中每一該複數個毛 細管之直徑為0 . 1至0 . 2毫微米。 1 9 .如申請專利範圍第1 0項之方法,其中第二材料包括厚 度尺寸在1 0至1毫微米之範圍。 2 0. —種製造微電動能泵之方法,包含以下步驟: a. 提供一基板; b. 施加一多孔結構玻璃材料於基板之介面,其中該多孔材 料耦合至在介面之基板;及 c. 在基板外形成複數個支撐結構,因而形成複數個支撐孔 隙於沿介面之支撐結構之間,其中一施加在介面與多孔結 構玻璃材料表面間之電壓差驅動液體自複數個支撐結構通 過多孔至結構表面。 2 1 .如申請專利範圍第2 0項之方法,進一步包含拋光多孔 結構至一預定厚度之步驟。 2 2 .如申請專利範圍第2 0項之方法,進一步包含形成複數 個具有適當直徑尺寸之微孔通過多孔結構,其中該複數個 微孔自表面延伸至介面。 2 3 .如申請專利範圍第2 2項之方法,其中該微孔成平行形 狀0200416349 VI. Scope of Patent Application Glass materials. 16. The method of claim 10, wherein the first material is a ceramic material. 17 · The method according to item 10 of the patent application scope, wherein the second material is a polycrystalline material. 18. The method according to item 10 of the scope of patent application, wherein each of the plurality of capillary tubes has a diameter of 0.1 to 0.2 nm. 19. The method of claim 10, wherein the second material comprises a thickness dimension in the range of 10 to 1 nm. 2 0. A method for manufacturing a micro-electric energy pump, including the following steps: a. Providing a substrate; b. Applying a porous structure glass material to the interface of the substrate, wherein the porous material is coupled to the substrate on the interface; and c A plurality of support structures are formed outside the substrate, thereby forming a plurality of support pores between the support structures along the interface. One of the voltage differences between the interface and the surface of the porous structure glass material drives the liquid from the plurality of support structures through the porous to Structural surface. 2 1. The method of claim 20 in the scope of patent application, further comprising the step of polishing the porous structure to a predetermined thickness. 2 2. The method of claim 20 in the scope of patent application, further comprising forming a plurality of micropores having an appropriate diameter size to pass through the porous structure, wherein the plurality of micropores extend from the surface to the interface. 2 3. The method according to item 22 of the scope of patent application, wherein the micropores are in a parallel shape. 0 200416349 六、申請專利範圍 .! 24.如申請專利範圍第2 0項之方法,其中該多孔結構包括 丨 複數個微孔成不平行形狀。 ’ i 2 5 .如申請專利範圍第2 0項之方法,其中該多孔結構為預 | 先製造。 | 26. 如申請專利範圍第2 2項之方法,其中該多孔結構有一 預定之厚度尺寸範圍在50-500 0毫微米。 丨 * | 27. —種供泵送液體之電動能泵,包含: a. —本體,具有預定之厚度,本體包括第一外表面及第 二外表面,第一及第二外表面包括一氧化物絕緣薄膜; b. 複數個微孔隙以使液體通過本體,其中每一微孔隙自 第一外表面延伸至第二外表面,及包括一氧化絕緣薄膜於 其中; c. 一對電極以施加第一外表面與第二外表面間電壓差, 丨 ) 其中該電位壓驅動液體通過每一微孔隙。 28. 如申請專利範圍第2 7項之電動能泵,進一步包含支撐 元件耦合至本體,其中該支撐元件包括複數個支撐結構。 29. —種以液體冷卻熱放射裝置之冷卻系統迴路,其中該 熱放射裝置輸出具有第一溫度之液體,冷卻系統包括: 丨 a. —微通道熱交換器將自熱放射裝置之液體由第一溫度 冷卻至第二溫度,其中該微通道熱交換器以第二溫度輸出 液體; b. —微電動能泵供自微通道熱交換器以滲透泵送液體至 熱放射裝置,其中該泵送至熱放射裝置之液體基本為第二 i 溫度,該電動能泵尚包含:200416349 6. Scope of patent application 24. The method of item 20 of the scope of patent application, wherein the porous structure includes a plurality of micropores in a non-parallel shape. ′ I 2 5. The method of claim 20 in the scope of patent application, wherein the porous structure is pre-manufactured. 26. The method according to item 22 of the patent application range, wherein the porous structure has a predetermined thickness and a size range of 50-500 nm.丨 * | 27. —An electric energy pump for pumping liquid, including: a. —The body has a predetermined thickness, the body includes a first outer surface and a second outer surface, and the first and second outer surfaces include an oxide B. A plurality of micropores to allow liquid to pass through the body, wherein each micropore extends from the first outer surface to the second outer surface, and includes an oxide insulating film therein; c. A pair of electrodes to apply a first A voltage difference between an outer surface and a second outer surface, wherein the potential pressure drives the liquid through each micropore. 28. The electric energy pump according to item 27 of the patent application scope, further comprising a supporting element coupled to the body, wherein the supporting element includes a plurality of supporting structures. 29. — A cooling system circuit for cooling a heat radiation device with a liquid, wherein the heat radiation device outputs a liquid having a first temperature, and the cooling system includes: 丨 a. — The microchannel heat exchanger transfers the liquid of the self-heat radiation device from the first A temperature is cooled to a second temperature, wherein the micro-channel heat exchanger outputs liquid at the second temperature; b. — A micro-electric energy pump is provided for osmotically pumping liquid from the micro-channel heat exchanger to the heat radiation device, wherein the pumping The liquid to the heat radiation device is basically the second i temperature. The electric energy pump further includes: 第26頁 200416349 六、申請專利範圍 i. 一具有預定厚度之本體,該本體包括第一外表面及第二 外表面,其中該第一外表面及第二外表面包括一氧化物絕 緣薄膜; i i .複數個微孔隙供液體之通道以通過本體;其中該每一 微孔隙自第一外表面延伸至第二外表面,及包括氧化物絕 緣薄膜於其中;及 i i i. 一對電極供施加第一外表面與第二外表面間電壓差, 其中該電位差驅動液體通過每一微孔隙。 3 0 .如申請專利範圍第2 9項之冷卻系統迴路,其中該電 動能果進一步包含一支樓元件耦合至本體,該支撑元件包 括複數個支樓結構。Page 26 200416349 6. Scope of patent application i. A body having a predetermined thickness, the body including a first outer surface and a second outer surface, wherein the first outer surface and the second outer surface include an oxide insulating film; ii A plurality of micropores for the passage of liquid through the body; wherein each micropore extends from the first outer surface to the second outer surface, and includes an oxide insulating film therein; and ii i. A pair of electrodes for applying the first A voltage difference between an outer surface and a second outer surface, wherein the potential difference drives liquid through each micropore. 30. The cooling system circuit according to item 29 of the scope of the patent application, wherein the electromotive energy element further comprises a building element coupled to the body, and the supporting element includes a plurality of building structures. 第27頁Page 27
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