TW200415778A - Layout structure of standard cell - Google Patents

Abstract

A layout structure of standard cell, utilized in an IC layout process, is disclosed. Without changing the size and height of the standard cell, a source OD of a P-type transistor is electrically connected directly with a metal layer, which is electrically connected to a power source, through a contact plug, and meanwhile, an operational layer of a N-type transistor is also electrically connected directly with a metal layer, which is electrically connected to a ground, through another contact plug. Therefore, the size of the P-type transistor and the N-type Transistor are increased, thereby enhancing the performances of the P-type transistor and the N-type Transistor. Thus, the performance of the standard cell is enhanced.

Description

200415778

Technical field to which the invention belongs: The present invention relates to a layout name structure of a standard cell, and in particular: it relates to a standard component used in integrated circuit layout: a local structure. Hunting to reduce the distance between the transistor and the operating power in the standard component to increase the size of the transistor,… to improve the efficiency of the standard component without changing the south and area of the standard connector. Previous technology: With the advancement of semiconductor technology, the size of semiconductor components is getting smaller and smaller

The body circuit is getting more and more precise 'As a result of the continuous stacking of J in the limited space of the body element, when the semiconductor element enters the sub-micron (Sub_Micr0) or even the deep sub-micron (Deep Sub-Micro) field, in order to make the integrated circuit Considering the improvement of circuit operating efficiency and the area occupied by components, the size of semiconductor components needs to be greatly reduced, and accurate integrated circuit layout is a major task in advanced process control. The layout of the f-body circuit is a very important step in the process of chip design. The quality of the layout directly affects the area, windability and chip performance. Among them, the standard component layout design method (Standard CeU Uy〇ut "" 卯

Methodology) is currently the most commonly used integrated circuit design method, because the standard component layout design method is mainly selected from the standard component library (standard = U Library) to select a variety of different standard components (such as the standard CD element :) for design, Therefore, the layout processing (Lay〇ut Pr〇cess) can be fully automated '& S ten manufacturing time is very short' while having high production reliability. For example, please refer to Figure 1 and Figure 2. Figure 丨 shows the top view of the layout of standard components including p-type transistors and N-type transistors, and Figure 2 shows

200415778 V. Description of the invention (2) Schematic diagram of the structure obtained along the line AA and section in Figure 1. As shown in Fig. J and Fig. 2, the layout of the standard element 10 includes a layout of p-type transistors and n-type transistors. The P-type well 80 and the N-type well 70, and the p-type well 80 The p + doped region 82 and the N + doped region 84 and the P + doped region 74 and the "doped region 72" in the N-type well 70 are formed, and the semiconductor material layer 60 is used as a gate. Among them, the standard element has a size 44 The plug 32 is used to electrically connect the p-type operation layer 12 & p-type operation layer 12 above the metal layer 20, and the plug 36 is used to electrically connect the ^ -type operation layer to the N-type operation layer The metal layer 30 above 22. The p-type operation layer 12 of the P-type transistor includes at least a main operation area 14 and an extension = 16. The main operation area 14 has a size of 46, and the extended operation area 16 passes through the contact plug. 18 and the upper metal layer 20. Electrically-connected operation layer 22 includes at least a main operation area 24 and an extended operation area 26. The main area 24 has a size of 48 ', and the extended operation area 26 is connected to the top through the contact plug 28. The metal layer 30 is electrically connected. One of the metal layer 20 and the metal layer 可 can be electrically connected to an operating voltage (not shown), and the other can be connected. (Not shown). Meanwhile, the dielectric layer 90 is located between the metal layer 20 and the p-type operation layer 12, and the metal layer 42 is between the 30 and the N-type operation layer 22 ′ and the operation Lf of the metal wire 42 and the substrate core. In 8 layouts, electrically connecting the metal wire 42 and the? -Type operation layer 12 to the \ type: T drawing area alignment: the layout of the piece 10, it can be found that the extended operation area 16 and Yanzhang = time 26 The contact plug can be used to make electricity with the upper metal layer. Because the contact plug occupies a certain space in the layout circuit diagram, the areas of the main operating area 14 and the main operating area 24 are limited to a certain range, for example, through measurement Later, we can know the size of the main operating area 14 in the first figure

Page 6 200415778, description of the invention (3) is about 0.56. The size of the main operating area 24 is about 0.36. Please refer to Figures 3 and 4, which are shown in Figure 3 as a standard that includes p-type transistors. The top view of the layout of the components, shown in Figure 4 is a schematic diagram of the structure obtained along the BB 'section line in Figure 3.1. As shown in Figs. 3 and 4, the layout of the standard element 50 also includes a p-type transistor and an n-type transistor. Among them, the “standard component 50” has a size of 92, and the plug 32 is used to sexually connect the metal layer 20 above the P-type operation layer 12 and the W-type operation layer 12 and the Γ layer is used to electrically connect the N-type operation layer 22 ^ The gold operation layer 12 above the type operation layer 22 includes at least a main operation, and the L-shaped extended mouth operation area 14 has a size of 86, and the 1-shaped extension operation area 94 n ^ Α 2 Λ ^ ^ 2 ° ^ ^ ^, , ta, ^ ^ θ / ι includes the main operating area 24 and the L-shaped extended operating area plug = the electrically extended operating area 96 is also connected to the operating through = (not \ ^ electrically connected to the other-you can ΐ: 1 and 2 in the figure, the contact plug 18 and contact plug 28 make the Γ operation area 14 and the main operation area 24 high-yield and face within the dry area within the layout area, in order not to change the standard Element 10-22: the main operating force? Based on the main operating area 14 and the rate of the operating layer 12, the traditional product is used to improve the work efficiency plug 28 of the standard component 10, thereby removing the first plug of the contact plug 18 and The contact plug also pays the standard component 5 shown in Figures 3 and 4. At the same time, page 7 200415778 V. Description of the invention (4) ------ Basic: Process conditions of the process equipment 'Change the extended operation area in the i-th figure to the Shen operation area 26 to the [shape as shown in Figure 3, and let the L-shaped extended operation area 94 and the L-shaped extended operation area 96 pass through the plug 32 and the plug 36, respectively. The metal layer 20 and the metal layer 30 directly above are respectively electrically connected. Therefore, the areas of the main operation area 14 of the p-type operation layer & 14 and the main operation area 24 of the N-type operation layer 22 are & large, for example, via After the measurement, it can be seen that the size 86 of the main operation area 14 in FIG. 3 is about 0.66, which is 0.1% larger than the size 46 of the main operation area 14 in FIG. I. The size of the main operation area 24 is 88 Approximately 0.46 #m, which is oj larger than the size 48 of the main operating area 24 in FIG. 1, and the size 92 of the standard component 50 in FIG. 3 and the size 44 of the standard component 10 in FIG. 1 The same. However, when the semiconductor process is developed to the nanometer level, the size of the standard component is greatly reduced, which weakens the driving capability of the standard component. How to improve the driving capability of the standard component becomes the key to the process improvement. Summary of the Invention: Clouds above the above BACKGROUND OF THE INVENTION With the advancement of semiconductor technology, the scale of semiconductor elements Smaller and smaller, more and more sophisticated integrated circuits, making precise integrated circuit layout occupies a very important position in advanced process control, while the S &

The quasi-component layout design method is the most commonly used integrated circuit design method. However, since the size of the standard component is getting smaller and smaller, the working efficiency and driving ability of the standard component are greatly reduced. Therefore, in order to improve the working efficiency of the standard component without changing the height and area of the standard component, the present invention provides a Layout structure of standard components. The main purpose of the present invention is to provide a layout structure of standard components.

Page 8 200415778 V. Description of the invention (5) In the semiconductor process applied to the integrated circuit layout without changing the standard component, the P-type transistor and the N-type in the standard component are not changed without changing the height and size of the standard component The operating layer of the transistor passes directly through the contact plug, such as an N-type contact plug (n — —

Contact Plug) or substrate contact plug (P — Subcontact piug), etc., are electrically connected to the metal layer connected to the operating power supply or to the ground. The sizes of transistors and N-type transistors are enlarged, and p-type transistors The working efficiency of the crystal and n is improved, and the working efficiency of the standard component is improved from * According to the above-mentioned purpose, the present invention provides a standard element = structure ▲ which is applied to the semiconductor process of integrated circuit layout:

The layout structure of the components includes at least the base material. This quasi 7G and the second conductive type crystal gymnastics: ::: Electrician operation layer The electric type transistor operation layer is M-bit ^ base ^ on ', where the first two Among the two, the second lead is the P-type transistor operation layer and the N-type transistor operation layer is the P-type transistor gymnastic transistor operation. The layer includes at least extensions, and the first conductive type sub-operation area, the second conductive ^ extended operation area, the main operation area and the operation area, and the main operation layer includes at least a sub-operation of a rectangular extended transistor operation layer. On the substrate, where the first conductive first-metal layer, the first conductive type, the extended operation area are located through the first contact plug and the sub-operation area of the first layer, the more crystalline operation layer. The f operation layer of the secondary operation area is electrically connected, the second conductive type electrical metal layer, the second conductive type electrical :: shape extension operation area is located in the second electrical operation layer, the secondary operation area is more transparent through page 9 200415778 V. Description of the invention (6) Second contact plug and second gold Implementation method of metal layer connection: In the layout of traditional standard components, the extended operation areas of the P-type operation layer and the N-type operation layer need to be electrically connected to the upper metal layer through the contact plug, or they can be replaced by The L-shaped extended operating area is directly and electrically connected to the upper metal layer, thereby increasing the size of the P-type transistor and the N-type transistor to improve the working efficiency of the standard component. However, with the advancement of semiconductor technology, in the sub-micron or even nanometer level

In semiconductor manufacturing processes, this increase does not allow standard components to provide sufficient operating efficiency.

Referring to FIG. 5 and FIG. 6 at the same time, FIG. 5 shows an upper view of the layout of standard components when applying one embodiment of the present invention, and FIG. 6 shows a section along CC ′ in FIG. 5. Schematic structure of the line. As shown in FIG. 5 and FIG. 6 ', in the layout of the standard component 100 provided by the present invention, the layout of the p-type transistor and the N-type transistor is composed of a P-type well 16 and an n-type well 1 50, and P + doped region 162 and N + doped region 164 in p-type well 160 and P + doped region 154 and N + doped region 152 in N-type well 150, and the semiconductor material layer HO serves as a gate pole. Among them, the standard component 100 has a size of 134, and the plug 122 (such as a well contact plug or a substrate contact plug) is used to electrically connect the P-type operation layer 102 and the metal layer above the P-type operation layer 102. 110, the plug 126 (such as a well contact plug or a substrate contact plug) is used to electrically connect the metal layer 120 above the N-type operation layer 11 2 and the N-type operation layer 11 2. The P-type operation layer 102 of the P-type transistor includes at least a main operation area 104 and a rectangular extended operation area 106. The main operation area 104 has a size of 136 and a rectangular extension.

Page 10 200415778 V. Description of the invention (7) The operating area 106 is directly electrically connected to the upper metal layer 11 (). The N-type operating layer 112 of the body includes at least a main operating area 114 and a rectangular extension. The area 116, the main operating area 114 has a size of 138, and the rectangular extended operating area "116" is directly electrically connected to the upper metal layer 120. One of the metal metal layers can be electrically connected to the operating voltage (not layer U). In addition, ":: ^ can be grounded (not shown). At the same time, the dielectric layer 98 is located between the metal layer 10 and the p-type operation layer 102, between the metal layer 120 and the N-type operation layer 112, and the metal line. 1 3 2 and the substrate 180, and the electrical connection between the P-type transistor and the n-type transistor is completed through the metal wire 132 and the plug 182., without changing the height of the standard component Under standard and size, let standard components provide more efficient work efficiency and driving ability, arrange the extended operation area of P-type operation layer 丨 〇2 and extended operation area of N-type operation layer 11 2 with rectangular layout, and reduce the moment ^ extended operation The size of the region 106 and the rectangular extended operating region 116 increase the size of the p-type / N-type transistor and the N-type transistor. According to the measurement, it can be known that the size 136 of the main operation area 104 of the fifth type operation layer 102 is about 〇8, and the size 46 of the main operation area 14 in the second figure is increased by 0.24 _, * Figure 3

The size 86 of the main operation area 14 is increased by 0.14, and N = # ㈣114Mf138 in FIG. 5 is approximately ⑽ · 6❹, which is an increase of 0.24 μ compared with the size 48 of the main work area 24 in the middle. The size 88 of the area 24 is increased by 0.14 #m compared with the size 134 of the quasi-quasi element Π0, which is still equal to the standard element in the i-th dimension = the size 44 and the standard element 50 in the third Size 92. Please refer to the following Table 1. Table 1 shows the conventional standard component and standard component 50) and one embodiment of the present invention + ′ P-type transistor

Page 11 200415778 Description of the invention (8) Comparison table of the size of the main operating area of the crystal

i # 作 区 & Dimensions £ The size of the main cropping area_p 翌 Transistor 0.5. 0.66 \ im 0.8 \ LiXl N-type transistor 0.3 6 0.46 \ Lm 0.6 [im Dimensions are based on the increase of 1 1 about 18% to 27% about 40 ° / 0 to 6 0/0 by measuring traditional standard components (standard component 10 and standard component 50) The current rise and fall speeds are shown in Table II below. Table II shows one of the comparison tables of the time required for current rise and fall when the traditional standard components and this example are applied * 73;

Page 12 200415778 V. Description of the invention (9)

Standard · Element 1 0 Standard · Element # 50 Standard Fengyuan # 100 Time required for current rise 69.2 63.1 57.3 Time required for current decrease 46.1 40.6 34,7 Increase rate based on standard element # 1 Increase by about 10% About increase 20% Table 2 It can be clearly found from Table 1 that when one embodiment of the present invention is applied, the time required for current rise is reduced by about u. 9 ns compared with the standard element 10, and the current ns is larger than that in the standard element. The accumulation of the product is accelerated, and the present invention is one of the application standards required to reduce and decrease the photomask workpiece at 5 Q, so that the advantage of the standard is that the entire time of the application of the semi-information is reduced compared to the application of the standard component at 10 o'clock. It is reduced by about 5.9 ns for about 1 i4 element at 50. It can be known from this that, in the embodiment, as the speed of the P-type operation layer and the N-type operation layer is increased, the current rise and fall speed of the element 100 improves the working efficiency and driving ability. Provide a standard component company in integrated circuit layout: In the system process, & is a mask tool information database which can greatly improve the integration

Page 13 200415778 V. Description of the invention (10): Hours: Efficiency and accuracy. As there is no increase in component area, the ruler of P-type / N-type transistors for each standard component can be improved. This can be greatly reduced. The area of the chip reduces the product's electricity: the size of the body, because the person who knows this technology understands that the above only “the tn of the invention” is not used to limit the scope of the patent application of the invention; Equivalent changes or decorations made without departing from the spirit disclosed by the present invention shall all be included in the scope of patent application described below. ^

Page 14 200415778

Brief description of the figure,-Feng Bu Figure 1 shows a top view of a standard element containing a P-type transistor and N-type transistor; Figure 2 shows a cross section along AA in Figure 1 Schematic diagram of the structure obtained from the line. The third figure is a top view of a standard component including a p-type transistor and an n-type transistor. The fourth figure is a diagram obtained along the BB and cross-section line of the third figure. Schematic diagram 'FIG. 5 is a top view of the layout of a standard component when an embodiment of the present invention is applied; and FIG. 6 is a schematic diagram of the structure obtained along the cross-section line cC in FIG. 5. Table 1 shows a comparison table of the sizes of the main operating areas of the p-type transistor and the n-type transistor in the conventional standard device and one embodiment of the present invention. Table 1 shows a comparison table of the time required for the current to rise and fall when the conventional standard component and one embodiment of the present invention are applied. Comparative description of drawing numbers: 10 standard components 14 main operation area 18 contact plug 22 N-type operation layer 2 6 extended operation area 30 metal layer 34 operation area 38 operation area 42 metal wire 4 6 size 12 P-type operation layer 16 extended operation area 20 Metal layer 24 Main operating area M Contact plug 32 Plug 36 Plug 40 Base material 44 Size 48 Size

200415778 Brief description of the drawing 5 0 Standard element 60 Semiconductor material layer 72 N + doped region 80 P-type well 8 4 N + dopant region 88 Size 92 Size 96 L-shaped extension operation g 10 0 Standard element 10 4 Main operation area 11〇 Metal layer 114 Main operating area 120 Metal layer 124 Operating area 12 8 Operating area 134 Size 13 8 Size 15 2 N + doped region 160 P-well 164 N + doped region 180 Substrate 58 Plug 70 N-well 74 P + doped Miscellaneous region 82 P + doped region 86 Size 90 Dielectric layer 94 L-shaped extension operation region 98 Dielectric layer 102 P-type operation layer 106 Rectangular extension operation region 112 N-type operation layer 116 Rectangular extension operation region 122 Plug 126 Plug 132 metal line 136 size 150 N-type well 154 P + doped region 162 p + doped region 170 semiconductor material layer 182 plug

Page 16

Claims (1)

200415778 6. The scope of patent application is applied to _ at least includes: on the operating area and rectangular protruding end strip conductive material on the conductive main operating area, the first and the first conductive areas and the main Below the material layer, the layout structure of the contact plug and the 1 integrated component (standard Ceii)-the first: the local process, 'the layout layer of the standard component and the second operating layer are located separately-the substrate is selected Bamboo = at least includes a main area with a-rectangular protruding end. The second operation layer includes at least one operation area and one operation area; 5; No .: Electrical material layer,-Second guide material And plural 'materials ::: the first operation layer and the second operation layer are located below the line:' the sub-operation area of the first operation layer and the “• Hai rectangular protruding end are located on the first conductive layer; The sub-operation area of the operation layer under the material layer is further electrically connected through a first electrical material layer. The rectangular protruding ends of the ridges and areas of the second operation layer are all located on the second conductive material and the first operation layer. This secondary operating area is more transparent A second is electrically connected to the first conductive material layer. 2 on; ΓίΠ; layout structure of the standard component described in item 1, wherein 3. the layout structure of the standard component described in item 丨 of the scope of patent application, The first conductive material layer described above is a first metal layer, the second conductive material layer is a second metal layer, and the conductive material lines are a plurality of metal lines. The layout structure of the standard components mentioned above, which is 200415778 VI. Patent application scope. The first metal layer is an operation power metal layer, and the operation power metal layer is electrically connected to an operation power, and the second metal The layer is a ground metal layer 'and the ground metal layer is electrically connected to a ground. 5. The layout structure of the standard component as described in item 4 of the scope of patent application, wherein the first operation layer described above is a first conductive layer Type transistor operating layer, the second is a second conductive type transistor operating layer, and the first-connecting plug is a well contact plug, and the second contact plug is a substrate contact plug. UP: 5 of 5 The layout structure of the standard component described above, in which the N-type transistor is called; the upper transistor operation layer is a -ρ transistor operation layer and a working layer: one of the two, and the second conductive type The other two of the crystal gymnastics ^ The p-transistor operating layer and the N-type transistor operating layer in 7 of the patent scope item 1 of the patent scope of the layout structure, 1 in the- The rectangular protruding end of the main operation area is a rectangular extended operation area of the first operation layer. 上 On the 8th ::: special; the layout structure of the standard components described in the first item of the scope, the second middle work in i : The rectangular protruding end of the main operating area of the layer is a rectangular extended operating area of the first working layer. / The layout structure of the "quasi 7L" type is applied to a integrated circuit layout system 200415778 6. Apply for a patent In the scope, the standard element is a substrate; a first operating layer and a first operating layer are at least and a pair of operating area regions, and the layout structure of the component includes at least a first metal layer, a first operating layer, and the The sub-operation area and the 'the first operation and the A rectangular metal layer and the extending operation of the sub-layer is electrically connected to the operation layer. A second operation includes a moment, the second main operation area and a second gold second operation area of the secondary electrical connection layer of the rectangular extension layer are all areas that are more transparent as layers to extend the operation operation layer to the secondary operation. The area layer and the multi-layered substrate are stretched to the operation area before being used as the area. The second is located on the first through the second on the substrate. The main operation area extends the operation area and one includes a moment domain. And a plurality of metal wires, wherein the first domain is located in the contact plugs under the two metal layers of the more transparent weaving first operation layer and the first metal layer and contact plug sub-operation areas in the first operation layer, respectively; The second operation is the second metal I. The above-mentioned base material in the layout basin of the standard component as described in item 9 of the scope of patent application contains Shi Xi. /, II · The layout structure of the standard component as described in item 9 of the scope of patent application, wherein the first metal layer is an operation power metal layer, and the operation electrical metal layer is electrically connected to an operation power, and The second metal layer is a ground metal layer, and the ground metal layer is electrically connected to a ground. 1 2 · The layout structure of standard components as described in item 丨 丨 Page 19, 200415778 VI. Patent application park --- ^ of the above $, Λ The second operation layer is a first / conductivity transistor operation layer, and the first ^ 9 is a second conductivity transistor plug As a layer, the first contact plug ',,, ~ ~ well contact plug, and the second contact plug is a substrate contact plug. 2. The layout structure of the standard components as described in item 12 of the scope of the patent application, where the M first conductive transistor operating layer is a P-type transistor operating layer and an N-type arrester μ > ^ .a body One of the two operation layers is the second conductive type transistor: the other of the p-type transistor operation layer and the N-type transistor operation layer. The 14-way typed crystal is used to extend the basic, intermediate, and quasi-7 ° pieces of the layout structure. The layout structure of standard components used in a integrated circuit layout includes at least: the substrate; = a conductive transistor operation Layer and a second pin are located on the substrate, 1, the electric day and the sun are finely formed layer of the transistor, and the first conductive type transistor operation layer is a P operation layer and an N type transistor operation layer. The type transistor operating layer is the ρ type, "the other one of the first body operating layer. The sun-rivet operation layer and the N-type electricity are the other, and the two are together. ·: At least includes a rectangular extension operation Area, Qili transistor operating area, the second conductive type main operating area and a pair of operating areas,-the main operating body :: to include-rectangular extension-metal I, a second metal ", as & In the field, and on the material, the 苴 layer and the plurality of metal lines are respectively placed in the rectangular extended operation area, and the sub-operation area of the operation layer is under the first metal layer. The first guide Page 20 200415778 ff The sub-operation area of the crystal operation layer is further electrically connected through a first contact plug ^ the sub-metal layer. The ^ area of the second conductive type transistor operation layer and the rectangular extended operation area are both located in the second Metal layer: The sub-operation area of the second conductive transistor operation layer is further electrically connected to the second metal layer through a contact plug. 15. The layout structure of the standard component as described in item 14 of the scope of the patent application, wherein the above-mentioned substrate includes chopping. 16. The layout structure of the standard components as described in item 4 of the scope of the patent application, wherein the first metal layer is an operation power metal layer, and the operation power and the metal layer are electrically connected to an operation power, and The second metal layer is a ground metal layer, and the ground metal layer is electrically connected to a ground. The layout structure of the standard component as described in item 16 of the scope of patent application, wherein the first contact plug described above is a well contact plug, and the second contact plug is a substrate contact plug. Page 21