TW200414470A - Semiconductor chip scale packaging method - Google Patents
Semiconductor chip scale packaging method Download PDFInfo
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- TW200414470A TW200414470A TW92102323A TW92102323A TW200414470A TW 200414470 A TW200414470 A TW 200414470A TW 92102323 A TW92102323 A TW 92102323A TW 92102323 A TW92102323 A TW 92102323A TW 200414470 A TW200414470 A TW 200414470A
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- wafer
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- protective layer
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- pad
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/4824—Connecting between the body and an opposite side of the item with respect to the body
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- Wire Bonding (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Abstract
Description
200414470 五、發明說明(1) 【發明所屬之技 本發明係有 更特別地,係有 體的封裝方法。 【先前技術】 第一圖顯示 術領域】 ::ϋ 一種半導體晶元封裝體的封裝方法, 哥於一種成本得以降低之半導體晶元封裝 晶元封裝體包含 10、一具有一焊 上之焊墊110 ( 一種4知的半導體晶元封裝體。該半導體 二有電路軌跡佈設表面1 0 0的基體 5 ί ΐ表面和數個安裝於該焊墊安裝表面 心…。4 ί中僅顯示-個焊墊)的晶元11、一第一 保濩層1 2、和一第二保護層丨3。 該基體1 0具 11 0的穿孔1 0 1 該晶元11係 101曝露的情況 的勝帶(圖中未 佈設表面1 0 0 相 11 0係經由穿過 之電路執跡佈設 連接。 有數個用於曝露該晶元丨丨之對應之焊墊 〇 ,之焊墊110由該基體10之對應之穿孔 了藉由一没置在該晶元11與該基體1 〇之間 不)來被固定於該基體10之與該電路軌跡 對的日日70没置表面上。該晶元11的焊墊 對應之穿孔101的導線111來與該基體10 表面100上的電路執跡(圖中未示)電氣 該第一保護 的晶元設置表面 該第二保護 10的電路軌跡佈 等穿孔1 0 1 。 層12係以環氧樹脂為材料覆蓋於該基體1 〇 上俾可覆蓋該晶元;[丨。 層1 3亦係以環氧樹脂為材料覆蓋於該基體 設表面100上俾可覆蓋該等導線111和該 200414470 五、發明說明(2) 之 一然而,膠帶及環氧樹脂的單價係相杏言 半導體晶元封裝體的封裝成本係相 :门 於如此 【發明内容】 ”又阿。 有鑑於此,本案發明人遂以其從事爷 ,並本著精益求精之精神,積極研究改°夕年經驗 半導體晶元封裝體之封裝方法』產生。义逐有本發明『 本發明之目的是為提供一種成本 元封裝體之封裝方法。 低之半導體晶 根據本發明之-特徵,一種半導體晶元封 方法’包含如下之步驟:提供-半導體晶元,之= 體焊ί = 及數個安裝於該表面上的焊塾了;:二ί 設表表面、一與該電路軌跡二 =孔,在該基體的電路軌跡佈設表面上係佈設有預定1 於軌跡,把書亥日日日元置放於該基體的晶元安裝表面上以致 由!基體之對應的穿孔曝露;利用光阻 广;以土體的晶兀安裝表面上形成一覆蓋該晶元的第一 :護:俾可把該晶元固定於該基體上;藉由把該第一保護 層的第一部份曝露於紫外線而其之第二部份被遮蔽而不被 曝路於i外線及藉由後續的化學沖洗處理,僅位於該晶元 四周,該第一保護層的第一部份係被保留;藉由打線處 理"亥元的焊塾係經由穿過該基體之對應之穿孔的導線 來與咸電路軌跡佈設表面上之對應的電路軌跡電氣連接; 利用光阻材料於該基體的電路軌跡佈設表面上形成一第二 200414470 五、發明說明(3) 保護層;藉由邀 處理,僅該第!!於第一保護層類似的曝光及化學沖洗 於該基體之電:f護層之覆蓋該等導線的部份被保留;及 跡電氣連接的導佈設表面上形成數個與對應之電路執 根據本發明> 2 裝方法,包含士 Ϊ 特徵,一種半導體晶元封裴體之封 有-焊塾安裝步驟:提供一半導體晶元,該晶元具 墊;把該晶數個安裳於該焊塾安裝表面上的焊 —第一#$ ®置放於一基體的表面上;利用光阻材料形成 該第—保護層 :f的表面上俾可覆盍遠晶元;藉由把 遮蔽而不曝露於紫外::ί f於紫外線而其之第二部份被 塾安裂表面係祐ϊί的弟一部份係被保留且該晶元的焊 方式形成數個導f該益兀的焊墊安裝表面上以印刷 的;與該第-部份相二定 層之第-料層於該第一保護200414470 V. Description of the invention (1) [Technology to which the invention belongs The present invention has a more specific packaging method. [Previous technology] The first field of display technology: :: ϋ A method for packaging a semiconductor wafer package. Compared to a semiconductor wafer package with a reduced cost, the wafer package includes 10, a solder pad 110 (A kind of 4 known semiconductor wafer package. The semiconductor has a substrate 5 with a circuit track layout surface 1 0 0 and a number of cores mounted on the mounting surface of the solder pad ... 4 only shows one solder Pad) of the wafer 11, a first protection layer 12, and a second protection layer 丨 3. The substrate 10 has a perforation 1 0 1 1 1 The wafer 11 is exposed in the 101 case (the surface 1 0 0 is not laid out in the figure and the phase 11 0 is connected through a circuit passing through it. There are several uses The corresponding bonding pad 0 of the wafer 丨 is exposed, and the bonding pad 110 of the wafer 10 is pierced by the corresponding perforation of the substrate 10 (not disposed between the wafer 11 and the substrate 10). The day 70 of the pair of the base body 10 and the circuit track is not placed on the surface. The pad 111 of the die 11 corresponds to the lead 111 of the perforation 101 to track the circuit (not shown) on the surface 100 of the substrate 10. The first protected wafer sets the circuit track of the second protection 10 Cloth and other perforations 1 0 1. The layer 12 is covered with the epoxy resin as the material on the substrate 10 to cover the crystal element; [丨. Layer 1 3 is also covered with epoxy resin on the surface 100 of the substrate. It can cover the wires 111 and 200414470. V. One of the description of the invention (2) However, the unit price of adhesive tape and epoxy resin is relatively high. The packaging cost of a semiconductor wafer package is as follows: The door is so [Inventive Content] "Yeah. In view of this, the inventor of this case has worked with him and in the spirit of excellence, actively research and improve the experience "Semiconductor wafer package packaging method" is produced. The present invention "is an object of the present invention is to provide a cost package package method. Low semiconductor crystals according to the invention-feature, a semiconductor wafer sealing method 'Contains the following steps: providing-semiconductor wafer, where = body welding ί = and several solder pads mounted on the surface ;: two 二 set the surface, one and the circuit track two = holes, in the substrate The circuit track layout surface is provided with a predetermined track on the surface, and the book is placed on the wafer mounting surface of the substrate so that the corresponding perforations of the substrate are exposed; A first: protective: covering the crystal element is formed on the crystal mounting surface of the soil body; the crystal element can be fixed on the substrate; by exposing the first part of the first protective layer to ultraviolet light, The second part of it is shielded from being exposed to the outer line of i and it is only located around the wafer by subsequent chemical washing treatment. The first part of the first protective layer is retained; by wire treatment " Haiyuan's welding pad is electrically connected to the corresponding circuit track on the surface of the circuit track layout through the corresponding perforated wire passing through the substrate; a photoresist material is used to form a first on the circuit track layout surface of the substrate. Two 200414470 V. Description of the invention (3) Protective layer; by invitation, only the first !! The similar exposure and chemical washing of the first protective layer on the substrate: the part of the protective layer covering the wires Is retained; and a plurality of corresponding circuits are formed on the guide wiring surface of the electrical connection. According to the present invention, a mounting method includes a stern feature, a semiconductor wafer package, and a solder package installation step. Provides a Semiconductor crystal The wafer is provided with a pad; a welding-first # $ ® of a plurality of crystals on the mounting surface of the welding pad is placed on the surface of a substrate; the first protective layer is formed using a photoresist material: f The surface can be covered with distant crystal elements; by shielding and not exposed to ultraviolet light :: ί f to ultraviolet light and the second part of the surface is protected by 塾 An crack surface system, part of the younger brother is kept and The welding method of the wafer forms a plurality of conductive pads which are printed on the mounting surface of the rugged pad; a first material layer that is two-layered with the first-part layer is in the first protection.
及於母-曝露孔内形成有一導電球。弟卩伤的曝路 根據本發明之異—4± /jUL J方法,包含如下之步驟:提;種體晶元封裝體之封 =跡佈設表…與該電义該基體具有-電 破表面、及數個與該晶元之::二;面相對之晶元安 心坏墊對應的穿孔,在該基體的A conductive ball is formed in the female-exposed hole. According to the difference of the present invention, the exposure method of the wound is-4 ± / jUL J method, which includes the following steps: extracting; sealing of the seed crystal package body = trace layout table ... and the substrate has an -electrolytic surface , And several perforations corresponding to the wafer :: two; the perforations corresponding to the wafer's relief pads on the surface,
發明說明(4) 2路執跡佈設表面上係佈設有預 材料於該基體的晶元安裝表面上j電路軌跡;利用光阻 禪塾安裝表面及數個安 ΐ ΐ第—保護層的第-部份曝露“紫:f 一保護層;藉由 ,蔽而不被曝露於紫外線及#由=線而其之第二部份 僅位於該晶元四周之該第—保護層^的化學沖洗處理, 可形成一晶元容詈丨 一 ㈢、第一部份係被保留俾 裝於該表面上之焊墊的半導體晶^ =於該晶元的焊塾係由該基體 =該晶元容置孔以 線處理,該晶元的焊墊係經由穿j應的牙孔曝露;藉由打 導線來與該電路執跡佈設表面上體之對應之穿孔的 接;利用光阻材料於該基體的電的電路軌跡電氣連 第二保護> ·拉ώ 執跡佈设表面上形成一 沖洗處理,僅該帛二保護 ^層类員似的曝光及化學 留;及於該Α ^ ^ ^曰覆皿该等導線的部份被保 人A A &體之電路執跡佈設矣 電路執跡電氣連接的導電球。& 形成數個與對應之 根據本發明之又再一特徵,一種丰導鲈s 鰣夕 封裝方法,包含如下之步m種,體曰曰“封裝體之 上丨藉由把嗲第一样罐= 成一第一保護層於一基體 第二1 f ^ = π π,、4層之第一部份曝露於紫外線而其之 該不曝露於紫外線及藉由化學沖洗處理, :亥弟:保4層的第一部份俾可形成一晶元容置 一且 的晶元置放於該晶元容置= = 面上之焊塾 數個導電體,#一導;=!;上以印刷方式形成 守电股母导電體具有一延伸至晶元之對應之焊墊 1· 第8頁 200414470 五、發明說明(5) =第一部份和一與該第一部份相隔預定之距離的第二部 份;利用光阻材料形成一第二保護層於該第一保護^ ^第 俾可覆蓋該等導電體;藉由與施加二該第 曝光及化學沖洗處理,該第二保係形 露對應之導電體之第二部份的曝露及 形成有一導電球。 一部份的表面上 一保護層類似的 成有數個用於曝 於每一曝露孔内 【實施方式】 在本發明被詳細說 明當中,相似的元件係 了清楚揭示本發明之特 尺寸及不是按比例來描 第一至六圖是為顯 方法之第一較佳實施例 請參閱第二圖所示 元2具有一焊墊安裝表 墊21 (在圖式中僅顯示 接著,如在第三圖 體3具有一電路執跡佈 面3 0相對之晶元安裝表 對應的穿孔32。在該基 設有預定的電路執跡( 該晶元2係在其之 情況下被置放於該基體 然後,利用光阻材 明之前,應要 由相同的標號 徵,該等附圖 繪。 示本發明半導 的示意流程圖 注韋的是,在整 個說 標示 另一方面,為 首先 j ,丨丨·_丨 晶 面2 0及數個安 一個焊墊)。 中所示,一基 設表面3 0、一 面3 1、及數個 體3的電路執 圖中未示)。 焊墊21由該基 3的晶元安裝 料於該基體3 並不是按元件實際的 艘晶元封裝體之封裝 〇 元2係被提供。該晶 裝於該表面20上的焊 體3係被提供。該基 與該電路軌跡佈.設表 與該晶元2之焊墊21 跡佈設表面3 0上係佈 體3之穿孔32曝露的 表面31上。 的晶元安裝表面31上Description of the invention (4) A pre-material is arranged on the surface of the wafer mounting surface of the substrate on the 2-way track layout surface; the circuit track of the j-circuit is mounted on the substrate; the photoresist is mounted on the mounting surface and several security layers are used. Partially exposed "violet: f a protective layer; by chemical shielding treatment of the first-protective layer ^, which is shielded from being exposed to ultraviolet light and # by = line and the second part of which is only around the wafer A wafer can be formed. The first part is a semiconductor crystal with a pad mounted on the surface retained. The solder on the wafer is held by the substrate = the wafer. The holes are processed by wires, and the bonding pads of the wafer are exposed through the perforations of the teeth; the wires are connected to the corresponding perforations on the surface of the circuit track layout by using wires; the photoresist material is used on the substrate. Electrical circuit track electrical connection second protection > · Launching a rinsing process is formed on the surface of the track layout, only the exposure and chemical retention of the second protection layer is similar; and the A ^ ^ ^ Part of these wires is insured by the insurer AA & Electric ball. &Amp; Forming a number of corresponding and yet another feature according to the present invention, a method for encapsulation of fertile bass, including the following steps m, the body is called "above the package 丨 by putting the first The same tank = a first protective layer on a substrate, second 1 f ^ = π π, the first part of the 4 layer is exposed to ultraviolet light and it should not be exposed to ultraviolet light and treated by chemical washing: : The first part of the 4 layer can form a wafer containing one and the wafer can be placed on the wafer containing == the surface of the welding conductor several conductors, # 一 导 ; = !; 上Forming the electricity-conducting strand mother conductor by printing has a corresponding pad extending to the wafer 1. Page 8 200414470 V. Description of the invention (5) = the first part and a predetermined distance from the first part The second part of the distance; using a photoresist material to form a second protective layer on the first protection ^ ^ can cover the conductors; and by applying the second exposure and chemical processing, the second The second part of the conductive body corresponding to the protective dew is exposed and a conductive ball is formed. A protective layer on a part of the surface is similarly formed into several exposure holes for each exposure hole. [Embodiment] In the detailed description of the present invention, similar elements have clearly disclosed the special dimensions of the present invention and are not The first to sixth figures are drawn to scale. The first preferred embodiment of the display method is shown in the second figure. The element 2 has a pad mounting table pad 21 (only shown in the figure. Then, as shown in the third figure). The body 3 has a perforation 32 corresponding to the wafer mounting surface 30 and the corresponding wafer mounting table. A predetermined circuit trace is provided on the base (the wafer 2 is placed on the base in its case and then Before using a photoresist material, it should be marked with the same reference numerals and drawings. The schematic flow chart of the semiconducting device of the present invention is noted that, on the other hand, it is marked first. · _ 丨 Crystal plane 20 and several solder pads). As shown in the figure, the circuit implementation of one base surface 30, one side 31, and several individuals 3 are not shown in the figure). The bonding pad 21 is mounted by the wafer of the base 3. The base 3 is not provided according to the actual package of the wafer package of the element. The yuan 2 is provided. The solder body 3 having the crystal mounted on the surface 20 is provided. The base and the circuit track layout. Set the table and the pad 21 of the wafer 2 on the surface 31 where the perforations 32 of the cloth body 3 are exposed on the surface 30. Wafer mounting surface 31
第9頁 200414470 5·、發明說明(6) - 形成一覆蓋該晶元2的第一保護層4俾可把該晶元2 於該基體3 上。 在形成該第-保護層4 <後,藉由把該第一声4 的第-部份40曝露於紫外線而其之第二部份被遮蔽心被 曝露於紫外線及藉由後續的化學沖洗處理,僅 2四周之該第-保護層4的第一部份4〇係被、二曰 四圖中所示。 戈社步 接著,藉由打線處理’該晶元2的焊墊21係經 t對應之穿孔32的導線5來與該電路執跡佈設表 面3 0上之對應的電路執跡電氣連接。 在打線處理之後,係利用光阻材料於該基體3的雷路 J跡佈設表面3。上形成一第二保護層6五 沖洗;;:2;==一保;層4類似的曝光及化學 被保留:… 之覆盍該等導線5的部_ 個斑之::該基體3之電路軌跡佈設表面30上形成數 /、f應之電路軌跡電氣連接的導電球7 。 應要注意的是,為丁加強導線5 之後往係更可以包含如下之步驟。㈣度’在打線步驟 基體十:所示,在打線步驟之後,係至少於該 2之烊塾安接近穿孔的表面部份及該晶元 阻材枓般之絕緣材料形成一非常薄的絕緣層;=Page 9 200414470 5. Description of the invention (6)-Forming a first protective layer 4 covering the wafer 2 allows the wafer 2 to be deposited on the substrate 3. After forming the -protective layer 4 <, the second part 40 of the first sound 4 is exposed to ultraviolet light and the second part is shielded, the heart is exposed to ultraviolet light and by subsequent chemical washing In the treatment, only the first part 40 of the second protective layer 4 around 2 weeks is shown in the second and fourth figures. Geshe step Next, by wire bonding, the pad 21 of the wafer 2 is electrically connected to the corresponding circuit track on the circuit track layout surface 30 through the wire 5 of the corresponding through-hole 32 of t. After the wire bonding process, the photoresist material is used to lay the surface 3 on the Thunder Road J trace of the substrate 3. A second protective layer 6 is formed on the substrate; 5; = 2; == a guarantee; similar exposure and chemistry of layer 4 are retained: ... covering the part of these wires 5 _ spots :: the substrate 3 A conductive ball 7 is formed on the circuit track layout surface 30 to electrically connect the circuit tracks. It should be noted that the following steps may be included in the subsequent strengthening of the lead 5. ㈣ Degree 'in the wire bonding step of the substrate ten: shown, after the wire bonding step, a very thin insulating layer is formed at least from the surface portion of the 2A near the perforation and the insulating material like the wafer resist material. ; =
&S4 第10頁 200414470 五、發明說明(7) 加強導線5與對庳之焊執9 1 Ώ 應要注意的是,;形成該^電路軌間的物理連接° 合附芏其,> 二 Λ、、巴、、彖層8的同日守,於導線5上亦 i 一 λ〗道该絕緣層8 #材料以致於在每—導線5係形成 5 2 H線5之強度的加強層5〇俾可避免導線5在後續 的處理中發生斷裂的情況。 由=發明免於使用膠帶來把晶元且 和第二保護層4和6,因此脂來形成f -低。 G i體封裝成本得以有效地降 第七至十一圖顯不本發明车道触Θ - α 法的第二較佳實施例。 +導體曰曰凡封裝體之封裝方 請參閱第七圖所示,一半導 一基體3,的表面33上。 卜體阳疋2係首先被置放於 然後,利用光阻材料形成—第—保蠖 的表面33上俾可覆蓋該晶元2,如篦° ;於忒基體3 接著’藉由把該第一保護層4, H中/斤示。 線而其之第二部份被遮蔽而不曝露=H卩伤曝露於紫外 洗處理,僅位於該晶元2四周之令第土二错由化學沖 4〇,係被保留且該晶元2的焊墊安 面=第一部份 在第九圖中所示。 文衷表面2〇係被曝露,如 P返後,於該晶元2的焊塾安| 形成有數個導電體9。每一導;H°亡係以印刷方式 之對應之焊墊21的第一部份和一與今第=申至晶元2 距離的第二部份。 、以弟"卩伤相隔預定之& S4 Page 10 200414470 V. Description of the invention (7) Reinforced wire 5 and opposite welding 9 1 Ώ It should be noted that; forming the physical connection between the ^ circuit rail ° attached to it, > 2 The Λ ,, Bar, and 彖 layers are the same on the same day, and the wire 5 also has a lambda. The insulation layer 8 # material so that a 5 2 H wire 5 strength reinforcing layer 5 is formed on each of the 5 wires.俾 can avoid the situation where the wire 5 is broken in the subsequent processing. The invention is free from the use of adhesive tape to attach the wafers and the second protective layers 4 and 6, so that the grease to form f-low. The package cost of the Gi body can be effectively reduced. The seventh to eleventh figures show the second preferred embodiment of the lane-touching Θ-α method of the present invention. The + conductor is the package side of the package. Please refer to the seventh figure. Half of the package is on the surface 33 of the substrate 3. Bu Yangyang 2 is first placed on, and then formed with a photoresist material-the first-protection surface 33 can cover the crystal element 2, such as 篦 °; on the 忒 substrate 3 then 'by protecting the first protection Layer 4, H Middle / Kin shown. The second part of the wire is shielded and not exposed = H. The wound is exposed to the ultraviolet washing treatment, and only the second soil is located around the wafer 2. The second soil is chemically washed by 40, which is retained and the wafer 2 The solder pad mounting surface = the first part is shown in the ninth figure. The text surface 20 is exposed. For example, after P is returned, a plurality of conductors 9 are formed on the solder joint of the wafer 2. Each guide; H ° is printed in the first part of the corresponding pad 21 and a second part with a distance of 2 to the wafer. Yidi " stabbing each other
第11頁 200414470Page 11 200414470
五、發明說明(8) 現在請參閱第十圖所示,然後,利用光阻材料形成_ 第二保護層6 ’於該第一保護層之第一部份4 〇 ,的表面上俾 可覆蓋該等導電體9 。隨後,藉由與施加於該第一保護層 類似的曝光及化學沖洗處理,該第二保護層6,係形成有& 個用於曝露對應之導電體9之第二部份的曝露孔β 〇。 接著,於每一曝露孔6〇内係形成有一導電球61,如 第十一圖中所示。 第十二至十六圖顯示本發明半導體晶元封裝體之封裝 方法的第三較佳實施例。、 請參閱第十二圖所示,與第一較佳實施例不同,在本 較佳實施例中,.一由光阻材料形成的第一保護層4係首先 形成於一基體3的晶元安裝表面31上。該基體3的,結構係 與在第一較佳實施例中所描述的相同。 接著,藉由把該第一保護層4之第一部份曝露於紫外 線而其之第二部份被遮蔽而不被曝露於紫外線及藉由後續 的化學沖洗處理,該第一保護層4的第二部份係被移去俾 可形成一晶元容置孔4 1,如在第十三圖中所示。 然後,如在第十四圖中所示,一晶元2係被置放於該 晶元容置孔41以致於該晶元2的焊墊21係由該基體3之g 應的穿孔32曝露。接著,一由光阻材料形成的定位層係 形成於,第一保護層的第一部份4〇上俾可覆蓋該晶元2二 然後,藉由與施加於該第一保護層類似的曝光及後續的化 學沖洗處理,胃定位層42的中央部份係被移去以致於該晶 TC2之與焊塾安裝表面相對之表面的一部份係被曝露,如V. Description of the invention (8) Now refer to the tenth figure, and then use a photoresist material to form a second protective layer 6 'on the surface of the first portion 4 of the first protective layer. The electrical conductors 9. Subsequently, the second protective layer 6 is formed with & exposure holes β for exposing the second part of the corresponding conductive body 9 through exposure and chemical processing similar to those applied to the first protective layer. 〇. Next, a conductive ball 61 is formed in each exposure hole 60, as shown in the eleventh figure. Figures 12 to 16 show a third preferred embodiment of a method for packaging a semiconductor wafer package according to the present invention. Please refer to FIG. 12, which is different from the first preferred embodiment. In this preferred embodiment, a first protective layer 4 formed of a photoresist material is first formed on a substrate 3. Mounting surface 31. The structure of the base body 3 is the same as that described in the first preferred embodiment. Then, by exposing a first portion of the first protective layer 4 to ultraviolet rays and shielding a second portion thereof from being exposed to ultraviolet rays, and by subsequent chemical washing treatment, The second part is removed to form a wafer receiving hole 41, as shown in the thirteenth figure. Then, as shown in the fourteenth figure, a wafer 2 is placed in the wafer receiving hole 41 so that the pad 21 of the wafer 2 is exposed through the through hole 32 corresponding to the g of the substrate 3. . Next, a positioning layer formed of a photoresist material is formed on the first portion 40 of the first protective layer to cover the wafer 22. Then, by similar exposure to that applied to the first protective layer, And the subsequent chemical rinsing treatment, the central portion of the gastric positioning layer 42 was removed so that a part of the surface of the crystal TC2 opposite to the welding pad mounting surface was exposed, such as
200414470 五、發明說明(9) :5 :去::所不。應要注意的是,把該定位層42之中央 部伤移去的步驟是可以被省略。 τ犬 配合參閱第十五和十六圖所示,導線5和第 施例中所描述之步驟相同的步驟來被二 於此恕不再贅述。 |仏成八之砰細說明 七^ ί Ϊ七至十九圖顯示本發明半導體晶元封裝體之扭& 方法的第四較佳實施例。 封裝 3參閱第十七圖所示’與第二較佳實施例不 較佳貫知例中,一由光阻材料形成的第一保護層在本 被形成於-基體3, i。然後,藉由與在以上 土 ::先 中所述之相同的曝光與化學沖洗處理,該 只施例 二部份係被移去俾可形成一晶元容置孔41,如在=1的第 中所f。然後,一晶元2係被置放於該晶元容置^八圖 致於该晶702的焊墊安裝表面2〇係被曝露,如在内以 中所示。隨後,導電體、第二保護層、及導:十九圖 第二較佳實施例中所描述之步驟相同的步驟來w u與在 之詳細說明於此係被省略。 成,其 應要注意的是’在本發明之以上的說明中,曰一 墊係設置在晶元之焊墊安裝表面的中央部份,钬明疋之埤 係設置在晶元之焊墊安裝表面之周緣的晶元^ 埤墊 發明。 適用於本 綜上所述,本發明之『半導體晶元封裝體 法』’確能藉上述所揭露之構造、裝置,達到預/裝方 期之目的 200414470 五、發明說明(10) 與功效,且申請前未見於刊物亦未公開使用,符合發明專 利之新穎、進步等要件。 惟,上述所揭之圖式及說明,僅為本發明之實施例而 已,非為限定本發明之實施例;大凡熟悉該項技藝之人仕 ,其所依本發明之特徵範疇,所作之其他等效變化或修飾 ,皆應涵蓋在以下本案之申請專利範圍内。200414470 V. Description of the invention (9): 5: Go :: No. It should be noted that the step of removing the central part of the positioning layer 42 can be omitted. The τ dog is shown in the fifteenth and sixteenth figures. The wires 5 and the steps described in the embodiment are the same as those of the second embodiment, and will not be repeated here. | Detailed explanation of the eighth bang ^ Ϊ Ϊ Seventh to nineteenth figures show the fourth preferred embodiment of the twisting & method of the semiconductor wafer package of the present invention. The package 3 is shown in FIG. 17 and the second preferred embodiment is not preferred. In the conventional example, a first protective layer made of a photoresist material is formed on the base 3, i. Then, with the same exposure and chemical processing as described in the above: first, the second part of this example is removed, and a wafer receiving hole 41 can be formed, as in = 1.第 中 所 f. Then, a wafer 2 series is placed in the wafer accommodation ^ 8. The pad mounting surface 20 of the wafer 702 is exposed, as shown in the inside. Subsequently, the conductor, the second protective layer, and the conductor: the same steps described in the second preferred embodiment of FIG. 19 and the detailed description thereof are omitted here. It should be noted that, in the above description of the present invention, a pad is provided at the central portion of the wafer pad mounting surface, and a paddle is installed at the wafer pad mounting. The surface of the periphery of the wafer ^ 埤 pad invention. Applicable to the above, the "semiconductor wafer package method" of the present invention can indeed achieve the purpose of pre-installation by the structure and device disclosed above. 200414470 V. Description of the invention (10) and effects, It has not been seen in publications or publicly used before application, which meets the requirements for novelty and progress of invention patents. However, the drawings and descriptions disclosed above are only the embodiments of the present invention, and are not intended to limit the embodiments of the present invention. Anyone who is familiar with the technology can make other things based on the features of the present invention. Equivalent changes or modifications should be covered by the scope of patent application in the following case.
第14頁 200414470 圖式簡單說明 第一圖是為描繪 視圖; 第二至六圖是為 方法=第一較佳實施 第七至十一圖是 裝方法之第二較佳實 第十二至十六圖 封裝方法之第三較佳 第十七至十九圖 封裝方法之第四較佳 第二十圖是為插 步驟的示意剖视圖。 【圖式之主要元件代 10 基體 代 101 穿孔 110 焊墊 12 ^ 一保護層 2 晶元 21 焊塾 31 晶元安裝表$ 32穿孔 表面 40 第—部份 60 部份 7 導電球 一種習知半導體晶元封裝 衣體的示意剖 描繪本發明半導體晶元封 u,,, 衣體之封奘 例的示意流程圖; 了瑕 為描繪本發明半導體晶元 n 〜衣體之扭 ^例的示意流程圖; T ^為描繪本發明半導體晶元封裝體之 實施例的示意流程圖; — 是為描繪本發明半導體晶元封裝體之 實施例的示意流程圖;及 繪可應用於第一和第三較佳實施例之 表符號表】 100 電路執跡佈設表面 11 晶元 111 導線 13 第二保護層 20 焊塾安裝表面 3 基體 30 電路執跡佈設表面 4 第一保護層 6 第二保護層 5 導線 3, 基體Page 14 200414470 Brief description of the diagram The first diagram is for depicting the view; the second to sixth diagrams are for the method = the first preferred implementation is the seventh to eleventh diagram is the second best practice for the installation method The third preferred seventeenth to nineteenth figures of the six-picture encapsulation method and the fourth preferred twentieth figure of the encapsulation method are schematic cross-sectional views for the insertion step. [The main components of the diagram are 10 base body 101 perforation 110 solder pad 12 ^ a protective layer 2 wafer 21 solder pad 31 wafer installation table $ 32 perforated surface 40 part-60 part 7 conductive ball a conventional semiconductor The schematic cross-section of the wafer package body depicts a schematic flow chart of the sealing example of the semiconductor wafer seal u ,,, of the present invention; the flow chart is a schematic flow chart depicting the twist of the semiconductor wafer n to the body of the present invention ^ Figures T ^ are schematic flowcharts depicting embodiments of the semiconductor wafer package of the present invention;-are schematic flowcharts depicting embodiments of the semiconductor wafer package of the present invention; and the drawings can be applied to the first and third The symbol table of the preferred embodiment] 100 Circuit track layout surface 11 Wafer 111 Wire 13 Second protective layer 20 Solder mounting surface 3 Base 30 Circuit track layout surface 4 First protective layer 6 Second protective layer 5 Wire 3, the substrate
第15頁 200414470 圖式簡單說明 33 表 面 4, 第一保護層 40’ 第 一部份 9 導電體 6, 第 二保護層 61 導電球 41 晶 元容置孔 42 定位層 50 加 強層 8 絕緣層Page 15 200414470 Brief description of the drawings 33 Surface 4, first protective layer 40 ’first part 9 conductive body 6, second protective layer 61 conductive ball 41 crystal receiving hole 42 positioning layer 50 reinforcing layer 8 insulating layer
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