TW200412819A - Active matrix organic lightly emitting diode and fabricating method thereof - Google Patents

Abstract

A method of fabricating an active matrix organic lightly emitting diode is described. A thin film transistor array is formed on a substrate. An insulating layer having a plane surface is formed on the substrate covering the thin film transistor. Openings are formed in the insulating, and an anode layer is formed on the insulating layer filling the openings. Then, an emitting layer and a cathode are formed on the anode layer sequentially. Since the insulating layer provides a plane surface, the coverage uniformity of the layers formed on insulating layer can be improved.

Description

The light-emitting display element defines a gate electrode, and after forming a thin layer, and then a thin-film electric light-emitting organic light emitting active type is a kind of common light element that can be used, such as no viewing angle, wide range and full range in recent years. The organic light-emitting display transistor array has been formed into a main light display element to form a light energy indicator lamp, and the organic light-emitting device is low-powered to meet the multi-boom trend. Actively form a light-emitting display film transistor with a display surface display element, and develop an organic element to drive the silicon nitride protective layer when high-media is used. The fifth aspect of the invention is described in the invention. (1) The invention belongs to the present invention. It's about a law, and especially about a method of making. The front-end technology balance organic light-emitting display element. The high conversion efficiency semiconductor element board and the optical pickup head have some characteristics, such as the response speed, the use of temperature, and the characteristics of the display requirements of the current generation of active, which is based on A thin chirped light emitting layer and a cathode layer are formed. Therefore, an active organic light-emitting display element is used. In one, the active organic manufacturing method is to first form a gate dielectric layer on a substrate scanning wiring and a thin film transistor plate. After forming an anode (M2) on the gate dielectric layer to form a data wiring to form a thin-film transistor array, a display element and a manufacturing device, a light-emitting display element, and an electric power conversion application thereof are formed on a substrate. Due to the simple process and colorization, the components for research have been used on a substrate. The mobile organic system uses a metal layer (Ml) of a thin film transistor array to form metal wiring. Next, the source / drain of the second metal layer crystal is defined on the channel layer of the base film transistor, and then, it is sequentially formed over the substrate to form an active organic light emitting display element. , X said that in the above active organic light-emitting display element, the upper two light-emitting layers of the I organic film array structure with low undulations are not completely covered, and the appearance of Guangfan Wang is affected, which affects the conventional thin film electronics. The second organic first layer and the protective layer of the crystal array, if the shape is rough (such as the electric isolation or the metal one in the base ore process), the subsequent deposition of the silicon nitride protective layer and the organic layer is easier. Defects are generated, which cause the cathode layer and the first short circuit. In addition, if the surface of the anode layer is too rough, the surface of the organic light-emitting layer above it is uneven, and short circuits between the electrode layers occur. The purpose of the crime is to provide a main manufacturing method to solve the above-mentioned reasons, an organic hair system is arranged on a base crystal, and several scanning systems are arranged on the substrate data wiring. 200412819 V. Description of the invention (2) Push out the polar layer. As well as the cathode layer, however, the organic layer is liable to be generated when the photo layer is plated. In addition, when only a metal layer is used to generate a sudden light layer after the metal layer is excessively heated, the two metal layers will also be formed between the anode layer and the cathode. Therefore, the present invention and its components problem. Double glare 2: Propose an active organic light-emitting display thin-film electrical array, a planarization insulating layer, several light layers, and a cathode layer. Among them, on-board, and thin film transistor array system wiring and several data wiring. Above, the material of the planarization insulating layer covering the thin-film transistor may be a dynamic organic light-emitting display which causes a short-circuit defect element. It includes a contact window, the anode thin-film transistor array includes several thin-film electrical planarization insulating layers, Scanning wiring and photoresist material or dielectric

200412819 V. Description of the invention (3) The layer system is arranged on a flat insulating layer, and the anode is connected with 3 windows, and the film transistor is electrically connected. It is arranged in the anode layer and placed in the anode layer_L. Furthermore, organic light emitting, ^ ^ polar layers are arranged in organic hair # Μ μ

Mao Ming proposed an active organic light-emitting display system S f. This method was first formed on a substrate—thin film two; two sides and several data wirings. After that, on the substrate, the wiring layer is covered, covering the old film and the thief is formed on top of it to form a flat insulation and sweeping layer. "/ 4, electrical wiring, wiring and data wiring. 1. In the law office Formed, and a flat 2 edge bottom provides a fairly flat surface ', which can effectively resist = i = rL to form several openings, and fill the connection of the planarized insulation layer i, or fill in the openings before-the metal layer is shaped = And thin film if ί: form anode anode again, and make anode layer ^ »electrically connected by metal plug. Subsequently, an organic light emitting layer is formed on the anode layer: and a cathode organic light emitting layer is formed on the organic light emitting layer. Display element. Forming an active K1 104l9twf • Ptd Page 7 200412819 V. Description of the invention (4) Since the invention is intended to have a flat surface, it is said that the insulating layer machine is formed above the $ ^ column. The light-emitting layer and the cathode show < 'the anode layer is formed thereon, and it is known that the film layer can have better coverage and uniformity. Because the problem of short circuit caused by the invention can be improved. Easy to understand, the following special mention-mouth two his purpose: special , And advantages can be explained in more detail as follows: 乂 土 贝 也 歹 丨 'and in conjunction with the attached drawings, detailed implementation of Figure 1 *' The green display is in accordance with the ^ type of the organic light-emitting display element of this invention -立 θ · The active cross-section schematic diagram of the preferred embodiment. The first picture is composed of I-I,: rows: the pixel structure, i. One of the following pixel structures is taken as an example to detail /, Θ ', Yi Qing referring to Figure 1 and Figure 2, Tongjie / Poor 1 Λ line SL, Jin Li? Η1η9 Scanning wiring SL metal wiring 102, gate 104, and storage formed on the soil plate 1. 6 to form the first metal layer ⑷). Sub-electrodes Next, a gate dielectric layer 12 is formed on the substrate 100, and the material of the layer '? Dielectric layer 120 is, for example, silicon nitride or Silicon oxide. Subsequently, openings 112, 114 'are formed in the gate dielectric layer 120. The openings U2, 114 respectively expose the gate electrode 104 and the metal wiring 102. After that, a channel layer 109, m is formed on the gate dielectric layer 120. The channel layer 109 is formed above the sub-scanning wiring SL (predetermined as a gate electrode), and the channel layer is formed on Above the gate electrode 104. "After that, a source / drain is formed on the channel layers 10, 111.

〇419twf.ptd 200412819 V. Description of the invention (5) 10 8a / 108b, 1 〇a / i10b, and a data wiring DL electrically connected to the source 108a is formed on the gate dielectric layer 12 (), To form a second metal layer (^). Among them, the drain electrode 108b is electrically connected to the gate electrode 104 through the opening 112, and the source electrode 110a is electrically connected to the metal wiring 104 through the opening 114. In addition, the drain electrode 108b is formed above the lower electrode 106, so the drain electrode 10 讣 also serves as the upper electrode of the storage capacitor, and the gate dielectric layer 12 between the upper electrode 1081) and the lower electrode 106. 〇 is used as a capacitor dielectric layer. In this embodiment, an ohmic contact layer ns is formed between the source / drain channels 108a / 1108b and noaa / 11 () b "channel layers 109 and 111 to improve the source. Electrode / drain 108a / 1〇8b, u〇a / u〇b and the channel layer 109,: 11 electrical contact. Therefore, as a part of the closed electrode scanning wiring electrode 1 〇 8a / 〇8b, channel layer 109, and ohmic contact: 113 constitutes a thin film transistor 13, which serves as a switching element: contact I fr102, source / drain U〇a / U〇b channel layer 111 And the ohmic system constitutes another thin-film transistor 14o, which is used as a driving element 1 22 and then "formed on the structure described in the work described above-flattening the insulating layer method ... it ^ of the insulating layer 122 The method is, for example, one spin coating, two flat planar insulation, and thickness. The thickness is formed by the spin coating method, so the surface roughness between the ^ stopper layers is caused by excessive surface roughness. 10419twf.ptd Page 9 200412819

Short circuit phenomenon. , And 桎 tan = the opening 118 in the edge layer 122, exposing the f layer m, and the anode layer 124 formed therein is also filled in: Shangguangzhong, so the anode layer 124 can be electrically connected to the drain electrode 1101) connection.

In another embodiment of the present invention, as shown in FIG. 3, the method of electrically connecting the layer m and the drain electrode 110b may also first form a metal plug, and then planarize the anode layer m of the insulating layer 122. The anode layer 124 and the electrode are electrically connected to each other by a metal plug. Here, a method of forming a metal plug in the opening 118 is to form a metal layer on the planarization insulating layer 122, and then to remove the metal layer outside the opening 118 by a chemical mechanical polishing method. It is particularly worth mentioning that because the metal plug has higher conductivity than the anode layer material, it can have better electrical contact, and the chemical mechanical polishing process for forming the metal plug can also grind the planarized insulating layer at the same time. The surface of 122 makes the surface of the planarized insulating layer 1 2 2 more planar.

In addition, since the thickness of the formed planarizing insulating layer 122 is sufficiently thick, it can effectively reduce the parasitic capacitance that may be generated by the upper and lower conductive layers. Therefore, the anode layer 1 2 4 formed on the planarizing insulating layer 1 2 2 The area can be defined to be larger 'over the switching element 130 and the driving element 140' or even over a part of the scanning wiring SL and the data wiring d1, thereby increasing the light emitting area of each daylight structure. After that, an organic light emitting layer 126 is formed on the anode layer 124 and a cathode layer 128 is formed on the organic light emitting layer 126 to constitute an organic light emitting display element.

Page 10 200412819 Five, the invention said ^ (7) " " " '" " " " " " " " "' ------ pixel structure. Therefore, the active organic light-emitting display element of the present invention is composed of a daylight structure, wherein each daylight structure includes a scanning wiring sl, a lean wiring DL, a switching element 130, a driving element 14, A wiring 102, a planarization insulating layer 122, a contact window 118, an anode layer 124, an organic light emitting layer 126, and a cathode layer 128. The data wiring DL direction and scanning Among them, the scanning wiring SL is arranged on the substrate 100. It is arranged on the substrate 100, and the extending direction of the data wiring DL is different from that of the wiring SL. In addition, the switching element 130 is disposed on the substrate 100, and the switching element 130 is electrically connected to the scanning wiring SL and the data wiring d1. In this embodiment, the switching element 130 is a thin film transistor, which includes a gate, a channel layer 109, and a source / inverter 108a / 108b. The gate is a part of the scan wiring SL, and the source 108a is connected to the data wiring sl. The driving element 140 is arranged on the substrate 100, and corresponds to the switching element 130 configuration. The driving element 140 is electrically connected to the switching element 130. In this embodiment, the driving element 140 is a thin film transistor, which includes a gate 104, a channel layer 11, and a source / drain 1 丨 0a / 1 j 〇b, the gate 丨 〇4, and the switching element. The drain electrodes 108 b of 130 are electrically connected to each other through the contact window 112. In addition, the wiring 102 is arranged on the substrate 100. The extension direction of the wiring 102 is the same as that of the scanning wiring SL. The wiring 102 is connected to the source 11 oa of the driving element i 4 〇. The contact windows 4 are electrically connected to each other. The planarization insulating layer 122 is disposed above the substrate 100 and covers the scan.

200412819 V. Description of the invention (8) Trace wiring SL, data wiring DL, switching element 1 30, driving element 1 40, and wiring 102. The material of the planarization insulating layer 1 2 2 is, for example, a photoresist material or a dielectric material. The contact window 1 1 8 is disposed in the planarized insulating layer 1 2 2, and the anode layer 1 2 4 is disposed on the surface of the planarized insulating layer. The anode layer 1 2 4 is driven by the contact window 1 18 The drain 110 b of the element 140 is electrically connected. In the present invention, the material of the contact window 118 may be the same material as that of the anode layer 24, and the material of the contact 1118 may also be a conductive material different from that of the anode layer 124. Organic is configured because it has a flat light-emitting layer. Although it is known to limit the scope and scope of protection, when the light-emitting layer is in the organic form of the invention and the anion film layer, the present invention includes 1 2 The 6 series is disposed on the light emitting layer 1 2 6 on the anode layer 1 2 4. In terms of the thin film transistor array, it is possible to have better coverage and subsequent short circuit on the upper electrode layer. The short circuit problem has been disclosed in a preferred embodiment. No slight modification or retouching is allowed, as defined by the scope of the patent application, and the insulating layer formed by the cathode layer 1 2 8 forms the anode layer and has uniformity. The problem can be improved. The above is not intended to deviate from the essence of the present invention, so the warranty of the present invention shall prevail. i

200412819 Brief description of the drawings-Figure 1 is a top view of an active female display element according to a preferred embodiment of the present invention; flying organic light emitting Figure 2 is an active organic light emitting display according to a preferred embodiment of the present invention A cross-sectional view of the element is a cross-sectional view from I to I in FIG. 1; " and " Oral reply, and Fig. 3 is an active organic light-emitting display element according to another preferred embodiment of the present invention. The cross-sectional view is the other view from Bu j in Figure 1. Schematic description of port 100 substrate 102 metal wiring 104 gate 106 lower electrode

108a / 108b, 110a / 110b: source electrode; and electrode 10, 111: channel layer 112, 114, 118: contact window 113: ohmic contact layer 120: gate dielectric layer 122: planarization insulating layer 124: anode Floor

1 2 6: Organic light-emitting layer 128: Cathode layer SL: Scan wiring DL ·· Data wiring

Claims (1)

200412819 6. Scope of patent application1. An active organic light-emitting display element includes: a thin-film transistor array arranged on a substrate, wherein the thin-film transistor array includes a plurality of thin-film transistors, a plurality of scanning wirings, and A plurality of data wirings; I ㈣ ^ a halogenated insulating layer is disposed above the substrate and covers the ',, θθ bodies, the scanning wirings, and the data wirings; a plurality of contact windows are disposed on the flat surface; An insulating layer; an anode layer disposed on the surface of the planarized insulating layer; the i layer is electrically connected with the thin film transistors through the contact windows; an organic light emitting layer is disposed on the anode Layer; and a cathode layer 'is disposed on the organic light emitting layer. Element quality. = The material of the flattened insulating layer in the active organic light emitting diodes described in item 1 of the scope of patent application includes photoresist materials or dielectric, electrical and electronic components =: Please refer to the active organic light emitting devices described in item 1 of the patent scope The material of the contact window is the same material as that of the anode layer, and ', J: Please refer to the patent scope! The material of the contact window in the active organic light-emitting display device described in the item 2 is a material different from the anode layer. The main light-emitting display element constructed by a knot bottle is composed of a plurality of Shuxin, where Each pixel structure includes:-Beijing ~ scanning wiring, arranged on a substrate; stretched Γ data wiring, arranged on the substrate, wherein the data distribution green orientation is different from the extension direction of the scanning wiring; , Yan ~ switch element, arranged on the substrate, where the switch element is the same as 200412819 6. Scope of patent application The scanning wiring and the data wiring are electrically connected; a driving element, west? To be set, the $ ^-is placed on the substrate, and the 2 and 3 drive components corresponding to the switching element are electrically connected to the switching element; 浐 > 酋: line, 酉 is placed on the substrate The direction of the extension of the wiring is described above. The extension of the wiring is described above. ^, 丨 甲 刀 υ 丨 ,, ¾ are connected; and σ is the same, and the wiring is electrically flat with the driving element. An insulating layer, a private wiring, the tributary wiring, and a wire; arranged above the substrate, covering the scanning element, the driving element, and the contact window, and arranged in the planarized insulating layer; Is disposed on the surface of the planarized insulating layer, wherein the electrode layer is electrically connected to the driving element through the contact window; an organic light emitting layer is disposed on the anode layer; and a cathode layer is disposed on the On the organic light emitting layer. 6 · The active organic light-emitting display device described in item 1 of the declared patent scope, wherein the material of the planarized insulating layer includes a photoresist material or a dielectric material. 7. The active organic light emitting display device described in item 1 of the scope of patent application, wherein the material of the contact window is the same material as that of the anode layer. 8. The active organic light-emitting display element according to item 1 of the scope of patent application, wherein the material of the contact window is different from that of the anode layer. 9. · A method for manufacturing an active organic light emitting display element, comprising: forming a thin film transistor array on a substrate, wherein the thin film transistor array includes a plurality of thin film transistors, a plurality of scanning wirings, and a plurality of 200412819 6. Wiring of patent application information; forming a flat crystalline transistor above the substrate, the scanning wiring and the line covering the films to form a plurality of openings in the planarization insulating layer; in the planarization insulation An electrode layer is formed on the surface of the layer through the openings to communicate with the thin films: Surface: The anode is formed on the anode layer-organic light-emitting layer; connected by]; formed on the organic light-emitting layer. -Cathode layer. 10. The method for manufacturing a main device as described in item 9 of the scope of patent application, the flattening insulation, c-light display spin coating method is formed in #. The method includes a method of manufacturing an active device as described in item 9 of the scope of patent application ', in which the planarized insulation is made of a dielectric or a dielectric material. Ahbe includes photoresistive material12. The method for manufacturing an active device as described in item 9 of the scope of patent application, in which the anode layer is filled in the two redundant machines: the light shows that the anode layer can communicate with the thin film transistors. Sexual connection. "In order to make. 丨 3. The method for manufacturing an active coiled deer-element described in item 9 of the scope of patent application, wherein before forming the anode layer; a metal plug should not be formed in the openings. Plug, through which the metal pinch electrode layer can be electrically connected to the thin film transistors. To make the%-14. 14. The manufacturing method of the active element as described in item 13 of the scope of patent application, Wherein the metal plugs are formed, X is included, a metal layer is formed on the planarized insulating layer, and filled in the opening 104l9twf.ptd 200412819 Sixth, within the scope of patent application; and A planarization step is performed to remove the metal layer outside the openings. 15. The method for manufacturing an active organic light-emitting display element uranium according to item 4 of the patent application scope, wherein the planarization step includes chemical Mechanical grinding process 1 6 · —A method for manufacturing an active organic light emitting display element, comprising: forming a plurality of switching elements, a plurality of driving elements, a plurality of scanning wirings, a plurality of data wirings on a substrate A plurality of wirings, each of which is electrically connected to one of the wirings and one of the wirings, and each of the driving elements is corresponding to one of the switching elements and one of the These wirings are electrically connected; a planarizing insulating layer is formed over the substrate, covering the switching elements, the driving elements, the scanning wirings, the data wirings, and the wirings; in the planarizing insulating layer Forming a plurality of openings, exposing the moving elements; ° forming an anode layer on the surface of the planarized insulating layer, wherein the anode layer is electrically connected to the driving elements through the openings; An organic light-emitting layer is formed on the anode layer; and a cathode layer is formed on the organic light-emitting layer. Dry-opening U. Dipping active organic light-emitting display device as described in item 16 of the patent application scope Wherein a method of forming the planarized insulating layer includes 200412819 VI. Scope of patent application A spin coating method. _ 1 8 The method for manufacturing an active organic light emitting display device as described in item 1g of the scope of patent application, wherein the material of the planarization insulating layer includes a photoresist material or a dielectric material. 1 9 · The method for manufacturing an active organic light-emitting display device according to item 6 of the patent application scope, wherein the anode layer is filled in the openings so that the anode layer can be electrically connected to the driving elements. . 2 0. The method for manufacturing an active organic light-emitting display device according to item 6 of the patent application scope, wherein before forming the anode layer, a metal plug is formed in each of the openings, and These metal plugs enable the & anode layer to be electrically connected to the driving elements. 2 1 · The method for manufacturing an active organic light emitting display device according to item 20 of the scope of patent application, wherein the method of forming the metal plugs includes: forming a metal layer on the planarized insulating layer, and filling the Inside the openings; and performing a planarization step to remove the metal layer outside the openings. 2 2 · The method for manufacturing an active organic light emitting display device according to item 21 of the scope of patent application, wherein the step of planarizing includes a chemical mechanical grinding process. _ l〇419twf.ptd Page 18