TW200412217A - Method and apparatus for high volume assembly of radio frequency identification tags - Google Patents

Abstract

A plurality of electrical devices, such as RFID tags, that each include a die having one or more connecting pads, are produced. Dies are transferred from a wafer directly to substrates, or from the wafer to one or more intermediate surfaces before being transferred to the substrates. Dies can be transferred between surfaces using an adhesive surface mechanism and process. Dies can be alternatively transferred between surfaces using a punching mechanism and process. Dies can be alternativiey transferred between surfaces using a multi-barrel die collect mechanism and process. Alternatively, a die frame is formed. Furthermore, dies are transferred using the die frame.

Description

200412217 (1) 发明. Description of the invention [Technical field to which the invention belongs] The present invention generally relates to the assembly of electronic devices. More specifically, the present invention relates to the assembly of radio frequency identification (RFID) tags. [Prior Art] Selection and placement techniques are often used to assemble electronic devices. These technologies involve a manipulator, such as a robotic arm, to remove the integrated circuit (1C) die from a wafer and mount it to a device with other electronic components such as antennas, capacitors, resistors, and inductors. An electronic device is formed on the substrate. The selection and placement technology involves complex robotic components and control systems that operate only one die at a time. This technology has the disadvantage of limiting production. Furthermore, selection and placement techniques limit placement accuracy and have a minimum grain size requirement. One type of electronic device that can be assembled using pick and place technology is an RFID "tag". RFID tags can be fixed to an item to facilitate the detection and / or supervision of the item's existence. The presence of an RFID tag, and therefore the item to which the tag is fixed, can be checked and monitored by a device known as a "reader". As the market demands for products such as RFID tags increase, and as the die size shrinks, the assembly productivity for very small die and low production costs are the key elements for providing commercially viable products. Therefore, what is needed is a method and apparatus for high-volume assembly of electronic devices such as RFID tags (2) (2) 200412217, which overcome these limitations. SUMMARY OF THE INVENTION The present invention relates to methods, systems, and equipment for manufacturing one or more electronic devices, such as RFID tags, each of which includes a die with one or more conductive contact pads, the Such conductive contact pads provide electronic circuits that are electrically connected to a substrate. In the first form, most RFID tags are assembled in accordance with the present invention. Most dies are separated from a scribe wafer and mounted to a transfer or support surface (commonly referred to in the industry as a "green belt"). The grains are transferred from the support surface to the corresponding label substrate, either directly or via one or more intermediate surfaces. In the first type, the grains are transferred between the surfaces using an adhesion surface mechanism and process. In another form, the grains are transferred between the surfaces using a punching mechanism and process. In another type, the grains are transferred between surfaces by a multi-barreled grain collet mechanism and process. In another form, a die frame is formed. Furthermore, a grain frame is used to transfer the grains. In one form used to fabricate a die frame, a crystal circle containing most of the die is mounted on the surface of a band structure. A grooves grid is formed in the wafer to separate most of the dies on the surface of the tape structure. A part of the band structure which can be accessed through the gate trench is hardened into a -6-(3) (3) 200412217 grid structure. The grid structure removably holds most of the crystal grains. One or more of most crystal grains can be moved from the grid-like structure to a target surface. In an alternative form for making a die frame, a wafer containing a large number of die is mounted on a surface of a tape structure. The belt structure contains an encapsulated hardened material. A trench gate is formed in the wafer to separate most of the die on the surface of the tape structure. The surface of the belt structure is destroyed in the trench (when the trench is formed) so that the encapsulated hardened material is hardened in the trench to become a grid-like hardened material in the trench of the gate. In one form, the grains can be transferred from a grain frame made in accordance with the present invention. A grain frame is placed next to the surface of a substrate so that one of the most grains removably held in the grain frame is immediately adjacent to the substrate. Individual grains can be transferred from the grain frame to the immediate surface in this way. The grains can be transferred one by one from the grain frame, or most grains can be transferred simultaneously. In a type, the grains can be transferred between "pads up", oriented surfaces. When the grains are transferred to a substrate in a "pads up" orientation, the relevant electronic circuit It may be printed or formed to couple the contact pads of the die to the associated electronic circuitry of the label substrate. In an alternative form, the die may be transferred between "pads down" oriented surfaces. When the die is transferred to a substrate in a "pad down" orientation, the associated electronic circuits can be pre-printed or pre-deposited on the label substrate. In another form, a type of die is described. System. A wafer preparation module supplies a wafer to the surface of a belt structure. Wafer preparation module-7- 200412217 A crystal-to-digital structure holds a multi-structured fixed-surface tape surface. Remove the structure of the junction table, and the grid structure can be separated from the grid crystal from the grains that can be brought into the junction groove. Most of the structure can be knotted or rounded to make the grid consistent. The source is the number of crystalline grid agents. The grooves are hard and the grooves are hard. The surface 1 is divided into grains. In the form of counting the number of crystal grains in another type, another system for forming a die frame is described. A wafer preparation module supplies a wafer to a surface with a structure. Wafer preparation mold The group forms a trench grid in a wafer to separate most of the grains on the surface of the tape structure. The tape structure contains an encapsulated hardened material. A wafer singulation module forms a trench grid on the wafer Most of the grains on the surface of the separation belt structure are separated. The wafer cutting module destroys the surface of the belt structure in the groove (when the groove is formed) so that the encapsulation hardening material is hardened into a grid in the groove. Hardened material. In another form of the present invention, a system and equipment enable the assembly of RFID tags. There is a die transfer module to transfer most of the die from the support surface to the label substrate, with the pad facing up or down In another form of the present invention, an alternative system and equipment enables the assembly of RFID tags. There is a wafer preparation module to transfer the die from the support surface to a transfer surface. A die transfer module Die transfer from transfer surface to label The substrate, with the pad facing up or down. These and other advantages and features will become apparent from the detailed description of the present invention below. Embodiment -8- (5) (5) 200412217 The present invention provides for assembly Improved methods and systems for electronic devices (including RFID tags). The present invention provides improvements over current methods. Known technologies include version-based systems that select and place dies on a substrate one at a time. The present invention can be simultaneously Transfers most grains. Version-based systems are limited by the size of grains they can be manipulated, such as grains limited to more than 600 microns square. The present invention can be applied to grains of 100 microns and even smaller. Furthermore, the yield of conventional systems is poor, where two or more grains may be accidentally picked up at once, which results in the loss of additional grains. The invention provides the advantage of simplicity. The conventional grain transfer belt mechanism can be used by the present invention. Furthermore, much higher manufacturing rates can be achieved. Current technology processes 5-8,000 units per hour. The present invention can provide improvements to the N factor of these rates. For example, embodiments of the present invention can process crystals at a rate five times faster than conventional techniques, 100 times faster than conventional techniques, and even faster. Furthermore, since the present invention allows flip-chip die mounting technology, no wire bonding is required. The elements of the embodiments described herein may be combined in any manner. Example RFID tags are described in the following sections. An assembly example of the RFID tag is described in the next section. Further processing is described next, followed by the label assembly system. 1 * 0 RFID Tag The present invention relates to technology for manufacturing electronic devices such as RFID tags. For the purpose of illustration, the description here is mainly related to the manufacture of RFID tags. However, the interpolation is also applicable to the manufacture of further electronic device types-9- (6) (6) 200412217, such as those familiar with the relevant technology will understand from the teaching here. Figure 1 A shows a "standard RFID tag The block diagram of 100 is according to an embodiment of the present invention. As shown in FIG. 1A, the RFID tag 100 includes a die 100 and a related electronic circuit 106 on a tag substrate 116. The related electronic circuit 106 includes an antenna 114 in this example. Figures 1B and 1C show a detailed view of an exemplary RFID tag 100, which is labeled as RFID tags 100a and 100b. As shown in Figures 1B and 1C, the die 104 may be mounted on the antenna 1 14 of the related electronic circuit 106. As further described herein, the die 104 may be mounted with a pad facing up or pad facing down. RFID tags 100 may It is placed in an area where a large number (or collection) of RFID tags are present. The RFID tag 100 receives interrogation signals transmitted by one or more tag readers. According to the interrogation agreement, the RFID tag 100 responds to these signals. Each response contains its potential set of identifying existing RF ID tags Corresponding RFID tag 100. Upon receiving the response, the tag reader decides to respond to the identity of the tag, thereby confirming that the tag exists within the coverage area defined by the tag reader. The RFID tag 100 can be used in various Applications such as inventory control, airport baggage supervision, and security and surveillance applications. Therefore, RFID tags 100 can be attached to various items such as airline luggage, retail inventory, warehouse inventory, cars, mini discs (CDs) , Digital video discs (DVDs), video tapes, and other items. RFID tags 100 enable location monitoring and real-time tracking of these items.

In this embodiment, the dies 04 are integrated circuits that perform RF1D (7) (7) 200412217 operations, such as communicating with one or more tag readers (not shown) in accordance with various interrogation protocols. An exemplary interrogation agreement is described in U.S. Patent No. 6,002,344, which was approved to Bandy et al. On December 14, 1999 under the name Electronic Systems and Methods, and U.S. Patent Application No. 10/0 7 2, 8 85, which was filed on February 12, 2002. The die 104 includes a plurality of contact pads, each of which provides electrical connection to the related electronic circuit 106. The related electronic circuit 106 is connected to the die 104 through the majority of the 1C die 104 contact pads. In an embodiment, the related electronic circuit 106 provides one or more capabilities, including RF receiving and transmitting capabilities, sensor functions, power receiving and storing functions, and additional capabilities. The components of the related electronic circuit 106 can be printed on a label substrate 116 using a material such as conductive ink. Examples of the conductive ink include silver conductors 5000, 5021, and 5025, which are manufactured by DuPont Electronic Materials of Research Triangle Park, N.C. Other materials or mechanisms suitable for printing related electronic circuits 106 onto the label substrate 116 include polymer dielectric components 5018 and carbon-based PTC resistive pastes 72 82, which are also manufactured by DuPont Electronic Materials of Research Triangle Park, N.C. Those skilled in the art will understand from the teachings here other materials or mechanisms that can be used to deposit component materials on a substrate. As shown in FIGS. 1A-1C, the label substrate 116 has a first surface that houses the die 104, related electronic circuits 106, and further components of the label 100. The label substrate 116 also has a second surface that is opposite to the first surface. An adhesive material or a backing may be included on the two surfaces of -11-(8) (8) 200412217. When present, the adhesive substrate enables the label 100 to be mounted to an article, such as a book or consumer product. The label substrate 1 1 6 is made to the following materials such as polyester, paper, plastic, fabric (such as cloth), V, and / or other materials (such as commercially available Tyvec®). In some implementations of the label 100, the label substrate 116 may include a score or "cell" (not shown in Figs. 1A-1C) that houses the die 104. An example of this implementation is included in the "pad-up" orientation of die 104, as further described elsewhere. 2A and 2B show plan and side views of an example die 104. FIG. The crystal grain 104 includes four contact pads 204a-d, which provide an electrical connection between the associated electronic circuit 106 and the internal circuits of the crystal grain 104. Note that although four contact pads 2 0 4 a-d are shown, any number of contact pads may be used depending on the particular application. The contact pads 204 are made of a conductive material during the fabrication of the die. The contact pads 204 may be further established by deposition of additional and / or other materials such as gold or flux, if required by the assembly process. Such post-processing (or "bumping") will be familiar to those skilled in the relevant art. Figure 2C shows a portion of a substrate 116 on which the die 104 is mounted, according to an embodiment of the invention. As shown in FIG. 2, the contact pads 2 (Ha-d of the die 104) are coupled to individual contact areas 210a-d of the substrate 116. The contact areas 21 Oa-d provide electrical connection to the relevant electronic circuit 106. The configuration of the rectangular contact pads 204 ad allows the die 104 to be mounted to the substrate n6 with elasticity and good mechanical adhesion. This configuration allows the IC die 1 0 to be placed imperfectly on the substrate] 16 within the tolerance range, An acceptable electrical coupling is still achieved between the -12- (9) (9) 200412217 contact pads 204a-d and the contact area 2 1 Oa-d. For example, FIG. 2D shows the 1C grains on the substrate 116 〇4's incomplete placement. However, even if the 1C die 104 is improperly placed, acceptable electrical coupling is achieved between the contact pads 204a-d and the contact area 21〇a_d. Note that although the figure 2A-2D shows a layout of four contact pads 204a-d that collectively form a rectangular shape, but a larger or smaller number of contact pads 204 can also be used. Furthermore, the contact pad 204a can be used in the present invention The embodiment is designed in other shapes. 2.0 RFID tag assembly The present invention relates to continuous roll assembly technology and other uses for assembly (Such as RFID tags 100). These technologies involve a continuous web (or roll) of material for the tag antenna substrate 116, which can be separated into a majority of tags. As described herein, one or more are manufactured The tags can then be post-processed for individual use. For illustrative purposes, the techniques described here refer to the assembly of RFID tags 100. However, these techniques can be applied to other tag implementations and other suitable devices, such as Those skilled in the relevant art can learn from the teaching here. The present invention advantageously removes the limitation of assembling electronic devices such as RFID tags one at a time, and allows most electronic devices to be assembled in parallel. The present invention provides continuous roll technology, which is a system An assembly rate that is scalable and provides a much higher yield than conventional pick and place techniques. Figure 3 shows a flowchart of an example step with continuous roll manufacturing related to RFID tag 100, according to the present invention. An example embodiment. Figure 3 shows -13-(10) (10) 200412217 shows a flowchart 'which illustrates a process 300 for assembling the label 100. Process 3 0 0 starts from step 302. · At step 3 02, a wafer 400 having a large number of dies 104 is manufactured. FIG. 4A shows a plan view of an exemplary wafer 400. As shown in FIG. 4A 'Most grains 104 are arranged in most rows 402m. At step 3 04, wafer 400 is supplied to a support surface 404. The support surface 404 contains an adhesive material to provide adhesion. For example, the support surface 4 04 may be An adhesive tape that holds wafer .400 in position for subsequent processing. FIG. 4B shows an exemplary view of a wafer 400 in contact with an exemplary support surface 400. FIG. At step 306, the majority of the dies 04 on the wafer 400 are separated. For example, step 306 may include marking the wafer 400 according to a process (such as laser etching). FIG. 5 shows a view of wafer 400, which has an exemplary separation die 104 in contact with support surface 404. FIG. FIG. 5 shows a plurality of scribe lines 50 2 a · 1, which indicate the positions where the crystal grains 104 are separated. At step 308, the majority of the crystal grains 104 are transferred from the support surface 404 to the substrate 116. In one embodiment, step 308 may allow "pad-down, transfer." On the other hand, step 308 may allow "pad-up" transfer. As used herein, "pad-up" and "pad-up" "Down" indicates an alternative implementation of the RFID tag 100. Specifically, these terms indicate the orientation of the connection pad 2 0 4 related to the tag substrate 1 16. The "pad up" orientation of the tag 100, the die 104 is Transfer to the label substrate 1 1 6 with its contact pads 2 0 4 a-d facing away from the label substrate 1 1 6. With the "pad down" orientation of the label 100, the die 1 04 is transferred to the label substrate 1 1 6 , With its contact pads 2 0 4 a-d facing (and contacting) the label substrate 丨 1 6. The steps related to the "pad upward" transfer 骡 3 0 8 are described in more detail with reference to the drawing 丨} -14-(11) (11) 200412217. The example of step 308 for "pad down" transfer is described in more detail with reference to Fig. 16. At step 3 10, post-processing is performed. At step During 3 10, the assembly of the RFID tag 100 is completed. Step 310 is described in more detail below with reference to FIG. 54. 2.1 Grain Transfer Example FIG. 3 The (and discussed above) step 3 08 is about transferring the separated die from a support surface to a label substrate. The separated die mounted on the support surface (as shown in FIG. 5) can be obtained by A variety of techniques were transferred to the label substrate. Conventionally, this transfer was accomplished using a picking and placing tool. The picking and placing tool used a vacuum die collet, which was controlled by a robotic mechanism that borrowed Suction acts to pick up the die from the support structure and hold the die firmly in the die holder. Pick and place tools to place the die into a die carrier or transfer surface. For example, a suitable transfer surface system The "punching belt" manufactured by Mulbauer, Germany. The disadvantage of the current selection and placement method is that only one die can be transferred at a time. Therefore, the current selection and placement method cannot be appropriately expanded at a very high production rate. The present invention allows one or more grains to be transferred from one support surface to one transfer surface at a time. In fact, the present invention allows the transfer of more than one grain to Between any two surfaces, including transferring grains from a supporting surface to an intermediate surface, transferring grains between most intermediate surfaces, transferring grains between an intermediate surface and the final substrate surface, and directly from a supporting surface Transfer grain-15- (12) (12) 200412217 to the final substrate surface. Figure 6 shows a flowchart 600 that provides steps for transferring grains from a first surface to a first surface, according to an embodiment of the present invention The structural embodiment of the present invention will be clearly understood by those skilled in the relevant arts based on the following discussion. These steps are described in detail below. The flowchart 600 starts from step 602. At step 602, most of the dies mounted on a support surface are received. For example, the grains are grains 04, which are not women's clothing to one of the support surfaces 404 in FIG. 4A. The support surface may be a "green belt" as is well known to those skilled in the relevant art. At step 604, most of the crystal grains are transferred to a subsequent surface. For example, the crystal grains 104 may be formed according to an embodiment of the present invention. Transferred. For example, the die may be transferred by an adhesive tape (such as a stamping belt), a multi-barrel conveying mechanism and / or process, or a die frame (such as further described below), and may also be transferred by other mechanisms and processes, or Transferred by the mechanism / process combination described herein. In embodiments, the subsequent surface may be the intermediate surface or the actual final surface. For example, the intermediate surface may be a transfer surface that contains a "blue band", such as Those skilled in the art are familiar. When the subsequent surface is a substrate, the 'subsequent surface may be a substrate structure, which includes most label substrates, or may be another substrate type. In step 606, it is determined whether the subsequent surface is the final surface. If the subsequent surface is a substrate on which the die is to be permanently installed, the process of flowchart 600 is completed. Therefore, as shown in FIG. 6, this process proceeds to flowchart 3 00 Step 3 10, as shown in Figure 3. If the subsequent surface is not the final surface, the process proceeds to step 604, where most of the crystal grains are then transferred to another (13) (13) 200412217 subsequent surface. Step 604 and 606 can be repeated any number of times as needed for a particular application. Any intermediate / transfer surface and final substrate surface may or may not have cells formed therein for the resident grains. Various processes described below can be used To simultaneously transfer most of the grains between the first and second surfaces, according to an embodiment of the present invention. In any of the processes described herein, the grains can be transferred with the pad facing up or the pad facing down, from One surface to another surface. The grain transfer process described herein includes the use of an adhesive surface, a parallel die stamping process, a multi-barrel die collet process, a die frame, and a die support frame. The grain transfer components described here can be combined in any way, as understood by those skilled in the relevant arts. These grain transfer processes, and the related example structures used to perform these processes, are further described. In the following subsections. 2-1.1 Grain Transfer Using Adhesive Surface According to an embodiment of the present invention, an adhesive substance coated on a second surface can be pressed against the separation where it resides on the first surface. On the die, it causes the die to mount onto the adhesively coated second surface. The second surface can be moved away from the first surface to carry the mounted die away from the first surface. The die can then be transferred To a subsequent intermediate / transfer surface, or to a final surface (such as a substrate). Figure 7 shows a flowchart 700, which provides the step of using an adhesive surface to transfer most of the grains from the first surface to the second surface. To For the purpose of illustration, the flowchart 7 00 will be described with reference to FIG. 8 —], although the process of (14) (14) 200412217 in the flowchart 7 00 is not limited to the structure shown in FIG. The flowchart 70 0 starts from step 70 2. At step 702, the second surface is disposed immediately adjacent to the first surface, and it is mounted with a plurality of dies. For example, as shown in FIG. 8, most of the crystal grains 104 are mounted to the first surface 802. A second surface 804 is disposed close to the first surface 802. For example, in the embodiment, the first surface 802 may be a scribe wafer or a support surface, or may be an intermediate surface. Further, the second surface 804 may be an intermediate or transfer surface, or may be a substrate surface. FIG. 4A shows an example support surface, such as the support surface 404. The second surface 804 may be a green belt or a blue belt, as is known in the industry. In step 704, the distance between the first surface and the second surface is reduced until most of the crystal grains contact the second surface and are mounted on the second surface due to the adhesion of the second surface. An example is shown in Figure 9. As shown in FIG. 9, the second surface 804 is in contact with the majority of the crystal grains 104. Either or both of the first and second surfaces 802 and 804 may be moved to cause contact. Note that the second surface 804 may be adhesive because it is an adhesive tape, or it may be a surface having an adhesive material, such as coated with epoxy, glue, or wax, so as to make it adhesive. At step 706, the first surface and the second surface are removed, and most of the crystals remain mounted on the second surface. For example, it is shown in FIG. 10. As shown in FIG. 10, the first surface 802 and the second surface 804 have been removed, and most of the crystal grains 104 remain mounted to the second surface 804. The majority of the grains 104 are separated from the first surface 802. Most of the dies 104 remain mounted to the second surface 804 due to the greater adhesion of the second surface 804 to the first surface 802. (15) (15) 200412217 In one embodiment, the flowchart 700 may include additional steps in which an adhesive material is applied to the second surface such that the adhesion of the second surface is greater than the adhesion of the first surface. / Note that overlapping (including the same) mechanism can be used to perform steps 7 0 to 7 0 6 to reduce the distance between the first and second surfaces and move the first and second surfaces away, or a different mechanism. For example, the mechanism used to perform steps 704 and / or 706 may include the use of rollers, piston-type stamping techniques, air jets, and / or any other suitable mechanism or other known mechanism described elsewhere in this specification. It is noted that flowchart 700 may be applied to a die that is oriented on either the first and second surfaces 802 and 804 with pads facing up or down. For example, the flow chart 700 may include further steps in which the majority of the crystal particles mounted to the first surface are oriented such that at least one contact pad of each of the plurality of crystal particles is facing away from the first surface. Therefore, when the first surface and the second surface are removed, most of the crystal grains will remain mounted on the second surface with the pad facing down. On the other hand, the flowchart 700 may include a step in which most of the crystal grains mounted to the first surface are oriented such that at least one contact pad surface of each of the crystal grains of the plurality of crystal grains faces the first surface. Therefore, when the first surface and the second surface are removed, most of the dies will remain mounted on the second surface with the pad facing up. In an embodiment, the process of flowchart 700 can be implemented on any or all of the discrete grains on the first surface. For example, this process can be completed in one or more iterations, using one or more adhesive-coated second surface strips of 804, each of which is adhered to (and a single row of dies of 104 strips Leaving from) the first surface 8 02. On the other hand, (16) (16) 200412217 can be coated with a sheet-sized adhesive on the second surface 804 to adhere to (and bring multiple rows / arrays of any size 104 away from) the first surface 802. For illustrative purposes' the following two subsections are presented here to provide a more detailed example of grain transfer using an adhesive surface. However, the present invention is not limited to these examples. 2.1.1.1 Transfer of pad upwards As described with reference to FIG. 3, in step 308, the crystal grains 104 can be transferred from the support surface 404 to the label substrate 116 in a "pad upwards" manner. When the pellet 10 is transferred to the label substrate 1 16 in this manner, it is oriented so that the contact pads 204a-d are facing away from the label substrate 116. Figure 1 1 is a flowchart that illustrates the "pad The "upward" transfer of step 308 is performed. This execution starts from step 1 1 02. In step 1 1 02, one or more grains 104 are oriented to facilitate removal from the support surface 4 0 4 Transfer to label substrate U 6. Step 1 1 02 is described in more detail with reference to Figures 12A, 12B, 13, 14, and 15 and provides a die during each stage of a "pad-up" transfer operation 1 04, support surface 404, a transfer surface. 1 202, and an example view of the label substrate 1 1 6. Step 1 102 includes steps 1 120 and 1 122. In step 1 120, the die 104 is set to contact and transfer the surface 1 202. The execution of this step is illustrated in Figures 12A and 12B, which provides contact and support surfaces 404 and one of the grains 104 of the transfer surface 1202. Figure. Setting the die 104 to contact the transfer surface 1202 may include steps to reduce the actual separation between the support surface 404 and the transfer surface 1 202 until the die 104 contacts the transfer surface 1 202. This can also be done through a roller, live -20- (17 (17) 200412217 The use of plug stamping technology and / or air jets is performed. Step 1120 further includes a step of aligning the transfer surface 1202 with one or more columns 402. For example, FIG. 12A shows the alignment with column 4. 2a's transfer surface 1 2 0 2. In this example, the transfer surface 1 2 0 2 has a width 1 2 0 4 which is selected to contact a single row 4 0 2 of grains 104. However, it is also possible to use For other widths, it comes into contact with the majority of columns 402. At step 1 122, the die 104 is removed from the support surface 404, thereby achieving a transfer from the support surface 404 to the transfer surface 1202. Figure 13 shows its transfer to the transfer surface 1 202 view of most of the grains 104. Removing the grains 104 from the support surface 404 may include the following steps: providing a stronger adhesive on the transfer surface 1 2 0 2 than on the support surface 404, and adding a support surface Actual between 404 and transfer surface 1 2 02 Separating. On the other hand, removing the die 104 from the support surface 404 may include the step of providing a relaxing adhesive to the support surface 404 by relaxation (such as exposure to thermal energy, radiation, or ultraviolet light). After that, the adhesive property is lost, and a relaxation effect is generated when it needs to be removed. After step 1 102, step 1 104 is performed. At step 1 104, apply an adhesive to the label substrate 1 1 6. This adhesive will provide a bond between die 104 and label substrate 116. Step 1 106 is subsequent to step 1 104. At step 1 106, the dies 104 are transferred to the label substrate U 6 in a "pad-up" manner. Step 1 106 includes the following steps: placing the die 104 in contact with the label substrate 116 and removing the die 104 from the transfer surface 1202. Figures M and 15 show pictures from the execution of step 1106. -21-(18) (18) 200412217 Fig. 14 shows a crystal particle 104η which contacts and transfers the surface 1 202 and the label substrate 116. The grain 104η is in contact with a cell or score 1 402 formed on the label substrate 116. The score 1 402 causes the contact pad 204 to be approximately evenly on the surface of the label substrate U6 with which the associated electronic circuit 106 is housed. Setting the die. 104 Contacting the label substrate 1 16 includes a step: reducing the actual separation between the transfer surface 1 202 and the label substrate 1 16 until the crystal particle 04 contacts the label substrate 1 1 6. This can be performed through the use of rollers, piston-type stamping technology, and / or air jets. In addition, placing the die 104 in contact with the label substrate 116 in a "pad-up" orientation includes the steps of aligning the die 104 with the corresponding scores 1 2 0 2. Removing the die 104 from the transfer surface 1 202 may include the following steps: providing a stronger adhesive on the label substrate 116 than the transfer surface 1 202, and adding between the transfer surface 1 202 and the label substrate 116 Actual separation. On the other hand, removing the grains 104 from the support surface 404 may include the following steps: Provide a relaxing adhesive on the transfer surface 1 202, which is caused by a relaxation effect such as exposure to thermal energy, radiation, or ultraviolet light It loses its adhesive properties and produces a relaxing effect when it needs to be removed. Figure 15 shows that a grain of 10 4 η is released from the transfer surface 1 2 0 2 and transferred to the label substrate 1 1 6. As shown in FIG. 15, the contact pad 2 0 4 is substantially flat with the surfaces 1 50 2 and 1 504 of the label substrate 116, thereby enabling the electrical connection to be easily formed on the contact pad 204 and printed on these The relevant electronic circuits on the surface are between 1.06. After step 1 106, a step 11 08 is performed. At step 108, the relevant electronic circuit 106 is printed on the label substrate U6. Step I 106 may include (19) 200412217 the step of printing the related electronic circuit 106 on the label substrate 1 16 through a screen printing process, an inkjet process, and / or a thermal spray process. On the other hand, step 1106 may include a step of removing a conductive material that has been disposed on the label substrate U 6 through an oblation process. After step 1 108, a step 1 11 is performed. In step 1110, a coating is applied on the label substrate 1116. This coating protects the components of tag 100, such as die 104 and related electronic circuits 106, from mechanical forces. In addition, this coating provides electrical insulation. Furthermore, the coating can provide a compressive force on the label substrate 116 to further ensure proper connection between the associated electronic circuit 106 and the die 104. This compressive force can be provided by using a heat-shrinkable material. 2.1. 1.2 Transfer of pad down

As described with reference to Fig. 3, in step 308, the grains 104 can be transferred from the support surface 404 to the label substrate 116 in a "pad-down" manner. When the crystal particles 104 are transferred to the label substrate 116 in this manner, they are oriented so that the contact pads 204a-d face toward the label substrate 116. Figure 16 is a flowchart illustrating the execution of step 308 of the "pad down" transfer in more detail. This execution starts at step 16 0 2. In step 16 02, one or more grains 104 are oriented to facilitate transfer from the support surface 404 to the label substrate 116. Step 1602 is described in more detail with reference to FIGS. 12A, 12B, 13-14, and 17 · 20. These figures provide example views of the grains 104, support surface 4 04, transfer surface 1 202, primary transfer surface 1 7 02, and label substrate 116 during various stages of a "pad-down" transfer operation- 23- (20) (20) 200412217 Figure. Step 1 62 0 includes a transferred crystal grain 104 to a step 1 62 on a main transfer surface and a transferred crystal grain 104 to a step 1 622 on a primary transfer surface. In step 1 620, the grain 104 is The contact and transfer surface 1 202 is disposed and the self-supporting surface 404 is removed, thereby causing the die 104 to be transferred from the support surface 404 to the transfer surface 1202. 12A and 12B provide views of the contact and support surface 404 and one of the grains 104 of the transfer surface 1220. The transfer surface 1 2 0 2 is an adhesive material, such as a tape. Setting the die 104 to contact and transfer the surface 1202 may include a step of reducing the actual separation between the support surface 400 and the transfer surface 1220 until the die 104 contacts the transfer surface 1202. This can also be performed through the use of rollers, piston-type stamping technology, and / or air jets. Figure 13 is a view of the majority of the crystal grains 104 removed from the self-supporting surface 404 and transferred to the transfer surface 1202. Removing the grains 104 from the support surface 4 0 4 may include the following steps: providing a stronger adhesive on the transfer surface 1 202 than on the support surface 404, and increasing the support surface 4 0 4 and the transfer surface 1 2 0 2 The actual separation between. On the other hand, removing the grain 104 from the support surface 404 may include the following steps: providing a relaxing adhesive on the support surface 404 by a relaxation action such as exposure to thermal energy, radiation, or ultraviolet light ) So that it loses its cohesive properties and creates a relaxing effect when it needs to be removed. After step 1 620, a step 1 622 is performed. At step 1 622, the crystal grains 104-series crust transfer surface 1220 is transferred to the secondary transfer surface 1702. At step 1 622, the grain 104 is placed in contact with the secondary transfer surface 1702 (21) (21) 200412217. Figure 17 provides an exemplary view of this contact, where grain 104 is contacted and transferred. Surface 1202 and secondary transfer surface 1702. Placing the grains in contact with the secondary transfer surface 1702 may include a step of reducing the actual separation between the support surface 400 and the transfer surface 1202 until the grains 104 contact the transfer surface 1220. This can also be performed by means of drums, piston-type stamping techniques, and / or air jets. Next, according to step 1622 ', the grains 104 are removed from the transfer surface 1202 to complete the transfer to the secondary transfer surface 1702. Figure 18 is a view of the crystal grains 104 which have been removed from the transfer surface 1202 and have since been transferred to the secondary transfer surface no. As described herein, the transfer surface 12 02 and the secondary transfer surface 17 02 are both adhesive surfaces. Therefore, removing the grains 104 from the transfer surface 02 may include the following steps: providing a stronger adhesive on the secondary transfer surface 1720 than on the transfer surface 1202, and the transfer surface 1 Actual separation between 2 0 2 and the secondary transfer surface 1 7 02. On the other hand, removing the grains 104 from the transfer surface 202 may include the following steps: providing a relaxing adhesive on the transfer surface 1 02 02, which acts by relaxation (such as exposure to thermal energy, radiation, etc.) , Or ultraviolet light) so that it loses its adhesive properties, and produces a relaxation effect when it needs to be removed. At step 16 0, the relevant electronic circuit 106 is printed on the label substrate n 6. Step 1604 may include a step of printing the relevant electronic circuit 106 on the label substrate 1 ^ 6 through a screen printing process, an inkjet process, and / or a thermal spray process. On the other hand, step 1604 may include a step of removing a conductive material that has been disposed on the label substrate 116 through a dedication process. In step 16 06, a conductive adhesive layer is placed on the label substrate n 6 (22) 200412217. This step involves applying an anisotropic adhesive, which is electrically conductive in a single dimension. One such adhesive is a commercially available "zeta axis" adhesive, which is well known in the related art. Anisotropic adhesives conduct electricity in a single direction. Therefore, it advantageously enables an electrical connection to be established between the connection pad 204 and the associated electronic circuit 106 without shorting the connection pad 204 together. At step 1 608, the die 104 is transferred to the label substrate 116 in a "pad-down" manner. The anisotropic adhesive layer placed on the label substrate 116 in step 1606 provides an electrical connection between each connection pad 204 and the corresponding component of the associated electronic circuit 106. Step 1 60 8 includes the following steps: setting the crystal grains 104 in contact with the label substrate 1 16 and removing the grains from the secondary transfer surface 1 702 104 °

Placing the die 104 in contact with the label substrate 116 may include a step of reducing the actual separation between the secondary transfer surface 1 702 and the label substrate 116 until the die 104 contacts the label substrate 1 16. This can also be performed through the use of rollers, piston-type stamping techniques, and / or air jets. Fig. 19 is a view of a grain 104 of a contact and secondary transfer surface 1702 and a label substrate 116 oriented "pad down". As shown in FIG. 19, a stamping member 1 902 may be used to punch the secondary transfer surface 1 702 at an opposite position from the die 104 to transfer the die 104 from the secondary transfer surface 1 702 to the label substrate 116. As mentioned above, other transfer mechanisms and / or processes may be used instead. Removal of the grains 104 from the secondary transfer surface 170 may include the following steps: providing a stronger adhesive on the label substrate 116 than on the secondary transfer surface 170, and adding the secondary transfer surface 17 Actual separation between 0 2 and label substrate 1 1 6. On the other hand, removing the grains 104 from the secondary transfer surface 1 702 may include -26-(23) (23) 200412217 including the following steps: providing a relaxing adhesive on the secondary transfer surface 1 702 by relaxation Effects (such as exposure to thermal energy, radiation, or ultraviolet light) that cause them to lose their adhesive properties, and produce a relaxing effect when removal is required. Figure 20 is a view of a die 104 oriented "pad down" mounted to the label substrate 116. 2.1.2 Parallel die stamping onto a supporting surface According to the parallel die stamping process of the present invention, a second surface (such as a stamping tape) is aligned on the separate die mounted on the first surface. The stamping strip has most of the die socket holes, "divots", or cells formed in a surface. Each socket cell in the stamped belt is aligned with a corresponding crystal grain on one of the first surfaces. Multiple mechanical holes are activated to push the die from the first surface into the corresponding receptacle cells of the stamping belt. In this way, any number of grains (including tens and hundreds of grains) can be transferred into the stamping belt at the same time, instead of only one grain at a time. FIG. 21 shows a flowchart 21 00, which provides a step of transferring a plurality of grains from a first surface to a second surface using a parallel stamping process, according to an embodiment of the present invention. It is noted that the steps of the optional flowchart 800 are shown enclosed in dashed lines. Further structural embodiments will be apparent to those skilled in the relevant art based on the following discussion. Flowchart 21 00 will be described in conjunction with Figures 22-29 for illustrative purposes. A perspective view of an example stamped strip 2200 is shown in FIG. 22, according to an embodiment of the present invention. Fig. 23 shows a cross-sectional view of the punching belt 22 00. As shown in FIG. 22, the punched band 22 00 has a majority cell 2202 formed in a top surface (24) (24) 200412217. In some embodiments, the punching tape 2200 may further have a plurality of guide holes 2204 formed in the top surface. As an example shown in FIG. 23, the punched tape 2 2 0 0 can be formed from a punched tape body 2 3 2 2 and an adhesive tape 2 3 0 4. The adhesive tape 2 3 0 4 is attached to a bottom surface of one of the punching tape bodies 23 02. The stamped tape body 23 02 is generally flexible and can have a variety of thicknesses, including thicknesses ranging from 5 mils to 1 1 mils, or other thicknesses. The stamped tape main body 230 can be made of plastic or other flexible or non-flexible materials. The adhesive tape 2 3 04 may be an adhesive tape or any other tape of adhesive material. On the other hand, the stamping tape 2200 may be a conventional wafer carrier (such as available in the industry), and / or may be a single piece stamping tape. The cell 22 02 is opened on one of the top surfaces of the punching strip 22 00 and is not opened on the bottom surface of the punching strip 2200. The majority cell 2202 is formed from the majority through the opening of the punching tape main body 2302, and one end thereof is covered by the adhesive tape 2304. The openings may be pre-formed by laser etching or by other processes, or may be formed in the punching tape 2 2 0. When present, the guide hole 2204 may penetrate the punching strip 2200 which will be opened on the bottom and top surfaces of the punching strip 2200, or may be opened on only one of the two surfaces. A pilot hole 2204 may be used to align the punching tape 2200 with a surface. In the following discussion, the stamping strip 22 00 is described as receiving the die from a supporting surface and transferring the die to a substrate. However, in an embodiment, for example, the punching tape 2200 may receive the die from a surface (which is a scribe wafer or a support surface), or an intermediate surface. Furthermore, the stamping belt 2200 can be transferred to (25) (25) 200412217 to transfer the grains to an intermediate or transfer surface, or to a substrate surface. The flowchart 2100 shown in FIG. 21 starts from step 2102. At step 2102, a support surface is positioned next to a corresponding cell of a plurality of cells in the surface of the stamping strip. FIG. 24 illustrates step 2102. For example, as shown in FIG. 24, the support surface of step 2102 may be the support surface 404, which is positioned immediately adjacent to the stamping belt 2200. As shown in FIG. 24, the majority of the dies 104a are mounted to the support surface 404, and the other majority of the dies 104b are mounted to the surface of the support surface 404. Each of the plurality of grains 104a is positioned next to one of the cells 2202 in the stamping strip 2200. FIG. 24 also shows a stamping device 2402 positioned adjacent to the support surface 404, according to an exemplary embodiment of the present invention. The stamping equipment 2402 includes a main body 2404 and a plurality of stamping members 2406. The stamped member 2406 is mounted to the main body 24 04. In the embodiment, the punching device 2402 may be any type of applicable punching device, including a flat surface (having a punching member 2406 extending from the surface), or may be a rolling-pin type device (It has a stamped member 2406 extending radially outward from the device). The stamping equipment 2402 can also be assembled in additional ways. At step 2104, all majority grain systems are simultaneously transferred from the support surface into the immediately adjacent corresponding cells. For example, as shown in Fig. 25, all the majority of the grains 104A are simultaneously transferred into the corresponding cells 2202 by the punching equipment 2402. As shown in Figure 25, the stamping device 2402 has been moved upwards to push each majority grain 104 A into its corresponding cell 2202 by pushing the support surface 4 0 4. As shown in FIG. 25, the support surface 404 is substantially buckled to allow the stamped member 2406 to push most of the grains 104a up without causing substantial damage to the support surface -29- (26) (26) 200412217 404 . Although not shown in FIG. 25, most of the crystal grains 104a are installed in the cell 2202 due to the adhesiveness of the adhesive tape 23 04, and remain in the cell 22 after the stamped member 2406 is removed or retracted. 2 in. In optional step 2 06, the stamping strip is incrementally positioned relative to the supporting surface to mount it to the other majority of the grains of the first surface of the device. One corresponding empty cell. For example, as shown in FIG. 26, the stamping strip 2200 has been moved and positioned immediately adjacent to the majority of the grains 104b so that one of its punching bands 22 00 is a cell 22 02 immediately adjacent to the majority of the grains 104b. Note that the process of its incremental punching belt 22 00 relative to the support surface 404 means that any one or more of the punching belt 2200, the support surface 404, and / or the punching equipment 2402 can be moved to properly position these components relative to the die 104. On the support surface 404. In optional step 2 108, all other majority grain systems are transferred from the support surface into the immediately adjacent corresponding cells. For example, as shown in FIG. 26, the punching device 2402 pushes each of the plurality of grains 104b into the adjacent cell 2202. Most of the crystal grains 104b are installed in the cell 2 2 0 2 due to the adhesiveness of the adhesive tape 2304. In optional step 2110, steps 2106 and 2108 may be repeated until substantially all of the die mounted to the support surface have been transferred from the support surface to the stamping belt. Note that the optional steps 2106, 2108, and 2110 are applicable to the embodiment, in which multiple iterations are required to punch most of the grains from one surface to the other surface so that all the crystals mounted to the first surface are transferred to the Two surfaces. In other words, for example, the majority of the grains transferred in a single step (27) (27) 200412217 may be substantially equal to one of every N grains of the total number of grains mounted to the supporting surface. Therefore, in this embodiment, the support surface may be positioned immediately adjacent to the surface of the punching strip, so that each of the crystal grains mounted on the first surface of the support surface is adjacent to the surface of the punching strip. A corresponding empty cell of the majority of empty cells. In an alternative embodiment, the majority of the transferred dies may be all the dies mounted to the first surface, so that it does not require further repetition. For example, FIG. 27 shows most of the dies 104 mounted to a support surface 404, where each die is positioned next to a corresponding cell 2202 in a stamping strip 2200. As shown in FIG. 27, the stamping apparatus 2404 has a majority of the stamped members 2406 corresponding to the majority of the grains 104. Therefore, when the stamping member 24 06 is punched into the support surface 4 04 at the same time, all the majority of the crystal grains 104 are simultaneously moved into the corresponding cells 2202 of the punching belt 2200. Note that the stamping mechanism grain transfer embodiments described herein can be applied with pad-up and pad-down grain orientation. Here, most of the crystal grains 104 can be transferred into the corresponding cells 2202 with their pads facing inside or outside the corresponding cells 2202, as required. Furthermore, the embodiment of the 'stamping mechanism' can be replaced with the adhesive tape transfer embodiment described above to reverse the orientation of the die 104. Therefore, an adhesive tape can be used to transfer the grains one or more times, followed by the final transfer of the majority of the grains 104 by the stamping mechanism. Therefore, the adhesive tape embodiment can be used to orient the die with pads up or down, before being stamped into the cells 2202. For example, in an example step 2 106, the support surface 4 0 4 It can be incremented by one row of grains 104 relative to the punched strip. The stamping belt 2 2 0 0 can be wound on a roller (28) (28) 200412217. The stamping strip 2200 is advanced so that its empty grain acceptor cells 2202 are aligned on a row of grains 104 on the support surface 404. The grains 104 in the row of the support surface 404 are punched into the empty grain receiver cells 2202, at step 2108. The support surface 4 04 may then be incremented by one more row, and the punching strip 2200 is pushed again, so that the next row of the grains 104 of its support surface 404 may be punched into the further empty grain receptacle of the punching strip 2 2000. This procedure can be repeated until the support surface 404 runs out of grains 104. An exemplary grain transfer embodiment using a stamping mechanism is described in detail in the following subsections. 2. · 1 · 2 · 1 Transfer directly from the support surface to the antenna substrate According to an embodiment of the present invention, a stamping mechanism can simultaneously transfer the individual crystal grains of a plurality of crystal grains from a first surface to a corresponding antenna substrate. In an embodiment in which the first surface is a support surface on which a separate die from a wafer is mounted, this process allows extremely fast manufacturing of a large number of electronic devices, such as rFID tag 100. Steps 2102 and 2104 of flow chart 2100 support the transfer of grains from a support surface to a substrate, in which a stamping tape is used instead of the second surface 'and a substrate is used as the second surface. FIG. 28 illustrates an example of using a stamping device 2402 to transfer the majority of the grains 104 from the support surface 04 to a substrate structure 2802, which contains the majority of the label substrate portion (ie, the label substrate 116a-d). FIG. 2 As shown in 8, the stamping apparatus 2 4 02 has a majority of the stamping members 2 4 06 'which are positioned adjacent to the grains 104 on one of the opposite surfaces of the support surface 404. (29) (29) 200412217 In a modified step 2102, the support surface 404 is positioned next to one of the surfaces of the base structure 2 802, so that each of the grains 104 of most of its grains is next to a standard iron substrate 116. Each standard rice substrate 116 has contact areas 2ioa and 210b for coupling to the contact pads 204a and 204b of each die 104. Note that one of the filling material layers 28 04 may be optionally applied to the surface of the base structure 2802. This allows each of the crystal grains 104 to be filled when mounted to the base structure 280. In a modified step 2104, all of the majority of the dies 104 are simultaneously transferred from the support surface 404 to the immediate, corresponding label substrate! 16 on. For example, as shown in Figure 28, the stamped member 2406 can be moved in the direction of arrow 2408 to transfer the grain 104. FIG. 29 shows a base structure 2802, which is mounted on one of the label substrates 116a-d with each die 104. The filling material layer 2804 provides a filling material to be placed between each die 104 and the label substrate 116. Examples of filling materials suitable for the filling material layer 2 8 04 are further described in the following sections. In this way, most RFID tags 100 can be generated quickly with fewer process steps. The tag substrates 116a-d shown in FIG. 29 can then be separated to produce a majority of individual RFID tags 100. Note that although Figures 28 and 29 show a direct orientation of die transfer to the label substrate 1 1 6 'with a "pad down" orientation, those skilled in the relevant art will understand this directly from the teachings here to transfer the die to the label The base u 6 can also be finished with a "pad up," oriented. 2 · 1 · 2 · 2 Example of filling material According to the parallel die stamping example of the present invention, a second surface (Zhu-33- (30) (30) 200412217 such as stamping tape 2200) is aligned to the installation To a first surface of the separated grains 104. Each of the socket cells 2202 in the stamping strip 2200 has a corresponding die in it] 04. Each cell 22 02 was then scooped in with a filling material. The punching device 24 02 is activated to move the die 104 from the punching tape 2200 onto the corresponding label substrate 1 16 of the substrate structure 2 8 0 2. In this way, any number of grains (including tens and hundreds of grains) can be transferred from the stamping tape 2200 at the same time, instead of transferring only one grain at a time. In addition, by applying a filling material before transferring the crystal grains 104 to the label substrate 116, the individual crystal grains can be easily packed on the individual label substrates 116. During the transfer process, Provides several advantages. FIG. 30 shows a flowchart 3000, which provides steps for assembling an RFID tag, according to an embodiment of the present invention. Note that it is an optional flowchart. The steps of 3 0 0 are shown enclosed in dotted lines. The flowchart 3 0 0 0 will be described in conjunction with FIG. 3 1-47 for the purpose of illustration. Further structural examples will be made apparent to those skilled in the art based on the following discussion. The flowchart 3 000 starts from step 3 002. At step 3 002, most of the grains are transferred from a support surface to a wafer carrier, which has most of the cells accessible on a first surface of the wafer carrier, so that each grain of most of the grains is It exists in the corresponding cell of one of the majority cells and is recessed in the corresponding cell related to the first surface. For example, the wafer carrier is a stamped tape such as the stamped tape 2200 shown in FIG. As shown in Fig. 31, the punched strip 2200 has first and second cells 2202a and 2202b which are example empty. Figures 32 and 33 show the first and second grains 104a and 104b transferred into the first and second cells 2202a and 2202b. The first and second dies 104a and 1 (Mb can be transferred into the first through any of the processes described herein (31) (31) 200412217 or other known processes (including by a selection and placement process). The first and second cells 22 02a and 2202b. The first and second cells 104a and 104b can be transferred into the first and second cells 2202a and 2202b one at a time (as shown in Figures 32 and 33), or at the same time Note that its two grains are shown for the purpose of illustration in the present example, and the invention can be applied to any number of grains. At step 3 004, a filling material is applied to each of the majority of grains. For example, as shown in FIG. 34, a filling material 3402 is applied to the first and second cells 2202a and 2202b to substantially cover each of the crystal grains 104a and 104b. The first and second filling material parts 3402a and 3402b. The filling material 3402 is used to fill the grains 04 when it is mounted to a substrate (such as a label substrate 1 1 6), such as environmental and sealing Protection and other purposes (among other reasons). In the embodiment, the 'filling material 3 402 can be passed on by those skilled in the relevant art. Any filling material known above. The filling material 3 4 02 may be conductive or non-conductive. For example, the filling material 3402 may be isotropically conductive, that is, substantially uniformly conductive in all directions. In addition, the filling material 3 402 may be anisotropically conductive, that is, conductive in a desired direction. For example, the filling material 3402 may be a Z-axis epoxide. In one embodiment, coating The amount of filling material 3402 applied to each cell 2202 can be controlled so that it provides the amount required for a particular application. For example, Figure 34 shows that its first and second filling materials 3402a and 3402) have been Coated so that its filling material extends beyond the first and second cells 2202a and 2202b. In another example, FIG. 35 shows that its first and second filling materials 3402a and 3400-35- (32) (32) 200412217 have been coated so that the filling material is flush. Or level the top surface with 2 2 0. For example, in order to make the filling material 3402 flush or level with the top surface of the stamping strip 2200, a "squeeze (sq u e e g e e)" process may be used. Figure 36 shows an example of a smoothing process performed. For example, a flattening element 3 602 is passed along the top surface of the stamping belt 2200 to smooth the first filling material 3402a in the first cell 2202a. It was shown that one of the excess filling materials 3604 was removed. In the example of FIG. 36, the filling material 3 402 is applied to the cell 2202 before the leveling element 3 602 is supplied. On the other hand, the filling material 3402 can be applied by a smoothing element 3602. In the example of Fig. 3 4-36, the height of each grain 104 is approximately equal to half the height of the corresponding cell 2202. The filling material 3604 is filled with the remaining half of the height of the cell 2202. The amount of filling material 3 6 0 4 in this cell 2 2 0 2 is relative to the size of die 104, which can provide sufficient filling material 3604 to die 104 (when mounted to substrate 116) 'Without excessive filling materials. However, the present invention can be applied to the higher or lower portion of the filling material 3604 in the cell 2202. In the optional step 3 006 of the flowchart 3 000, the first surface of the wafer carrier is positioned immediately adjacent to a surface having a majority The surface of the base structure of the base portion of the label. For example, FIG. 37 shows an example base structure 2802. The base structure 2802 contains a majority of the label base portion (ie, the label base 1 1 6), also referred to as a web or array of label bases. The base structure 2802 contains any number of label substrates 1 1 6 and can be shaped into any size, row, column, or array of label substrates 1 1 6. Fig. 38 shows the base structure 2802 of Fig. 37, which has been separated into individual strip-shaped tag base structures 2802a, 2802b, 2802c, and 2 8d (33) (33) 200412217. The base structure 2 8 0 2 can be separated into strips by sawing, cutting, laser, and other processes. One of the strips of the base structure 2 8 02 can be conveniently used to transfer the grains 10 4 self-punching / pressing tape 2200, which also usually forms a strip. Figure 39 shows a view of a part of a strip-shaped base structure 2 8 02 a. The substrate structure 28 02 includes first and second label substrates 116 a and 116 b. The first tag substrate 116a includes an antenna 114a and a guide hole 3902a. The second tag substrate 116b includes an antenna 114b and a guide hole 3902b. A pilot hole 3 902 may be used to align the base structure 2802a with the stamped tape 2200. For example, guide hole 3 902 may be used with guide hole 2204 shown in FIG. 22 to provide alignment. The pilot hole 3 902 and the pilot hole 2204 may be used to mechanically or optically align the base structure 2802a and the punching tape 2200. For example, mechanical alignment may include using a first round with spacers (pegs) with its links and guide holes 22 04 to align the punching strip 2200, and using a first round with spacers with its links and guide holes 3 902. Two rounds to align the base structure 2 8 02 a. The first and second rounds are synchronized. FIG. 40 shows the top surface of the punching strip 2200 positioned next to the base structure 2 8 02a, according to step 3006. The label substrate 116a is positioned next to the cell 2202a. At optional step 3 008, the second surface of the wafer carrier is stamped adjacent to a position opposite to the cell of the majority cell to move each die away from the corresponding cell so that the filling material covering the die contacts the majority label One of the base portions corresponds to a label base. For example, as shown in FIG. 41, a stamping member 4102 stamps the bottom surface of the stamping tape 2200 opposite to the first cell 2202a. The first die 104 moves away from the first cell 22 02a toward the label substrate 116a. (34) (34) 200412217 The filling material 3402a contacts the label substrate 1 16a. As shown in FIG. 42, the stamping member 4 1 2 moves the first die 1 04 until the first die 104 contacts the label substrate 1 16a 0. In an optional step 3010, the first surface of each die Is mounted to the corresponding label substrate such that at least one contact pad of each die thereof is electrically coupled to at least one corresponding contact pad of the corresponding label substrate. For example, the first die 104 is mounted to the label substrate 116a such that its contact pads 204a-d are electrically coupled to the contact areas 210a-d of the label substrate 116a. The first die 104a can be mounted to the label substrate 116a in a variety of ways. For example, step 3010 may include a step in which the filling material 3402 is hardened to mount each die 104 to a corresponding label substrate 116. A hardenable filling material 3402 can be flash hardenable, heat hardenable, sound hardenable, electron beam hardenable, ultraviolet (UV) light hardenable, infrared light hardenable, pressure hardenable, and other types of hardenable materials . Therefore, heat, sound source, electron beam, UV light, IR light, and / or pressure can be supplied as required to harden the filling material 3 402. For example, a two-group epoxy can be used in a flash Hardened filling material. In one embodiment, the hardening of the filling material 3 402 causes the filling material 3 402 to shrink or shrink. By shrinking, the filling material 3402 can cause the distance between each die 104 and the corresponding label substrate 116 to decrease, resulting in an improved mechanism of the contact pads 204a-d of each die 104 and / Or electrically coupled to the respective contact areas 21 Oa-d of the respective tag substrate 116. In this embodiment, the filling material 3402 has a thermal coefficient of expansion / contraction which governs the amount of shrinkage when hardened. This coefficient can be adjusted by selecting the material for the filling material 3402. Therefore, the thermal coefficient of the filling material 3 4 0 2 can be adjusted to match the thermal coefficient of the standard fiber substrate 1 1 6 (35) (35) 200412217 or otherwise. For example, the filling material 3 402 can be adjusted to shrink by a specific amount, such as 2 or 3 times its mass. For example, the filling material 3 4 0 2 can be additionally adjusted to apply a specific force to two areas, such as 50 kg / cm2. For example, the shrinkage of the filling material 3402 may cause the contact pads 204a-d to contact the corresponding contact areas 210a-d, which creates a sufficient electrical connection for operation of the resulting device. The smoothness and flatness of the contact pads 204a-d and / or the contact areas 210a-d may be substantially uniform such that a large area is accessible therebetween. In another example, the smoothness and flatness of the contact pads 204a-d and / or the contact areas 210a-d may be inconsistent to improve the conductivity. For example, the contact pads 204a-d (and / or the contact areas 210a-d) may have one or more bumps, spikes, spikes, and so on. Therefore, when the contact pads 204a-d are in contact with the contact area 21 Oa-d, one or more bumps, nails, spikes may partially or completely penetrate or pierce the contact area 21 Oa-d. It produces an improved electrical and mechanical connection. In another example, in one embodiment, the filling material 3402 includes conductive microspheres to provide conductivity. For example, the microspheres can be gold, silver, other metals, or a combination / alloy of metals. Therefore, when hardened, the shrinkable filler material causes the filler material to shrink, and a pressure is generated between each crystal grain and the corresponding label substrate. The increased pressure causes the microspheres to form a contact between the die and the substrate, deform, and electrically couple the contact pads 204a-d to the contact areas 210a-d. After the die 104a is mounted to the label substrate 116a, the die may be similar The ground is mounted to the label substrate 1 I6b. On the other hand, die 104a (36) (36) 200412217 and 104b can be simultaneously mounted to their individual label substrates. In the example of Fig. 3 2-42, the die 104 is oriented and mounted on the label substrate 1 16 in a pad-down manner. Figures 4 3;-4 7 show an example of Yi, in which the grains 104 are oriented and mounted on the label substrate n 6 in a pad-up manner. For example, as shown in FIG. 43, the first and second crystal grains 104 and 104 have been inserted into the cells 2202a and 2202b so that the contact pads 204a-d face the cells. As shown in FIG. 44, the stamping tape 2200 is positioned immediately adjacent the label substrate 116a of the base structure 2802a. As shown in FIG. 45, the punching tape 2200 is punched adjacent to one of the cells 2202a to move the crystal grains 104a in the cell 2202a into a corresponding cell or cavity 442 in one of the label substrates 116a so that it is filled with material 3402a substantially penetrates a gap between the outer edge of the grain 104a and the cavity 4402. As shown in Fig. 4, one surface of the crystal grain 104a and one surface of the filling material 3402a are substantially flush or flat with the surface of the label substrate usa. FIG. 46 shows a single die 104 mounted in a cavity of the label substrate 116. As shown in FIG. 46, in the current example, the contact pads 204a and 204b of the die 104 are not electrically coupled to the signal of the tag substrate 116. Figure 47 shows the contact pads 204a and 204b of the die 104 which have been electrically coupled to the contact areas 210a and 21 Ob of the label substrate 116 through the first and second electrical conductors 4702a and 4702b. For example, the electrical conductor 4702 can be printed, coated by a vapor deposition process, and formed on the contact area of the contact pad 2 0 4 of each die 104 and the corresponding label substrate 1 16 surface. 2 1 〇. 2.1.3 Multi-barrel Transfer of Grains -40-(37) (37) 200412217 According to an embodiment of the present invention, most of the grains 104 can be transferred from a first surface to a multi-barrel grain transfer device第二 表面。 The second surface. Fig. 48A shows an exemplary multi-barrel grain transfer device 48002, according to one embodiment of the present invention. The multi-barrel grain transfer equipment 4802 includes a main body 4804, and a plurality of barrels 408. The main body 4 8 04 is coupled to a gas supply and vacuum source 4 8 0 0. For example, a gas such as air, nitrogen, or other gas may be supplied by the vacuum source 48. In embodiments, there may be one or more barrels of any number 4 8 0 6, but usually there are a large number of barrels 4 8 0 6 to increase the transfer rate of the grains 104 to a factor of the number of barrels 4 8 06 existing . For example, there may be tens or hundreds of barrels. As shown in FIG. 48A, a multi-barrel grain transfer device 4802 having a plurality of barrels 4806 is positioned above the separated grain 104 mounted to the first surface. The first surface is shown as a support surface 404, in the example of FIG. 48A. Each bucket 4 806 is positioned so that one individual end of its bucket 4 806 lies above an individual die 104 on the support surface 404. The multi-barrel grain transfer equipment 48 02 receives the crystal grains 104 and stores them in the heaps of grains 104 of the majority of the barrels 4806. As shown in Figure 48B, the multi-barrel grain transfer device 4 802 is then positioned over a second surface. The second surface is shown as a transfer surface 1202, in the example of FIG. 48B. The multi-barrel grain transfer device 4802 places the grains 104 stored in the barrel 4806 on the second surface. FIG. 49 shows a flowchart 4900, which provides exemplary steps for transferring grains, according to an embodiment of the present invention. For the purpose of illustration, the steps of the flowchart 4 900 can be further described in relation to a multi-barrel grain transfer device 4 800, as shown in Figures 4-52. However, ′ other structural embodiments will make those skilled in the art understand _41 ~ (38) (38) 200412217 based on the following discussion. These steps are described in detail below. The flowchart 4900 starts at step 4902 '. In step 4902, each of the plurality of hollow barrels is supplied in parallel with an individual crystal residing on a first surface. For example, FIG. 50 shows a cross-sectional view of a multi-barrel grain transfer device 4 8 02 that is supplied to a first surface 8 02. Most hollow barrels are barrels 4 8 06. The barrel 4806 is hollow so that at least a single grain 104 of it can be passed into the barrel 4 8 06 at one time and stored therein. As shown in Fig. 48A, each bucket 408 is supplied in parallel with the other buckets 4806 to an individual die 104 on the first surface. At step 4904, individual grains are caused to move into the hollow buckets in parallel. For example, as shown in FIG. 50, each of the hollow barrels 4 806 has one SU die 104, which has been moved into an individual hollow barrel 48 06. At step 4906, steps 4902 and 4904 are repeated to produce grains piled in each hollow bucket. Thus, for example, the multi-barrel grain transfer device 4 8 02 can be moved as many times as needed to position the barrel 48 06 on individual grains so that its barrel 4 8 0 6 can collect individual grains 104. For example, as shown in Fig. 50, enough grains 104 have been moved into each barrel 48 06 to produce a heap of grains 104 5 002 in each barrel 4806. The stack 5002 as shown in FIG. 50 includes two grains 104, but in an embodiment may include any number of grains 104, including tens, hundreds, thousands, and even more grains. At step 4908, the grains from each hollow bucket are placed in parallel on the second surface until the grain piles in each hollow bucket are substantially exhausted. For example, FIGS. 51 and 52 show cross-sectional views of a multi-barrel grain transfer device 4 802 which is supplied to each second surface 804. As shown in FIGS. 5 1 and 5 2, the barrel 4806 of the multi-barrel die-42-200412217 transfer device 4802 places the die 104 flat on the second surface 804. The barrel 4 8 06 places the grains 104 until it essentially runs out of grains 104. In other words, bucket 4 8 0 6 may place a different number of grains 104 on the second surface 804, depending on the number of grains required for the second surface 804, and / or until—or more buckets 4806 are near or complete. Exhausted die 104.

The second surface 804 may have adhesion, which allows the adhesion of the crystal grains 104. For example, the second surface 804 may be an adhesive tape, or may have an adhesive material, such as a wax substance coated to provide adhesion. As shown in FIG. 51, the second surface 804 has a cell 5102 formed therein, in which a crystal grain 104 is placed from a bucket 4806. On the other hand, as shown in Fig. 52, the second surface 804 may have a substantially flat surface on which the crystal grains 104 are placed. Further, as shown in Figs. 51 and 52, the dies may be placed with the pads facing down or the pads facing up. The barrel 4806 may be inverted after collecting the grains to change the orientation of the grains 104 before they are placed on the second surface 804. For example, the ends 4 8 0 and 5 004 shown in FIG. 50 may be reversed after the grains 104 are collected. On the other hand, the barrel 4 8 0 6 can be left unreversed. In one embodiment, a vacuum may be used in steps 4904 and 4908 to move the die into or out of the bucket 4806. For example, a vacuum source 48 10 is shown as being mounted to a multi-barrel grain transfer device 4 8 02 in Figures 48 A, 48B, and 50-51. A vacuum source 48 10 may be supplied to a multi-barrel grain transfer device 4802 to cause a vacuum or suction in one or more barrels 4 8 06 to move individual grains 104 into barrels 4 806. The vacuum or suction may be continuous or supplied with controlled pulses. A vacuum source 48 10 may also be supplied or changed to move the grains 104 from the bucket 4 806 onto the second surface 804. For example, the vacuum source 4 8 10 can supply a positive pressure pulse to move -43 ~ (40) (40) 200412217 to move individual grains 104 away from the barrel 48 06. The barrel 4806 may be constructed to allow a better supply of the vacuum source 4810. FIG. 53 shows a cross-sectional top view of an exemplary bucket 48 06 having grains 104 inside, according to an embodiment of the present invention. The barrel 4 8 06 may be rectangular as shown in FIG. 53 or may be circular or other shapes. The bucket 4 8 06 may have a smooth inner surface 5 3 02 in one embodiment of the invention. On the other hand, as shown in FIG. 53, the inner surface 5302 may have a channel 5304 formed in one or more corners to allow gas to pass around the die 104. Channel 5304 can be used to control the vacuum or pressure in barrel 4806. Bucket 48 06 can be made of metal, plastic, or other applicable materials. For example, '48 06 may be a barrel, a tube, or a needle similar to an injection needle. The barrel 4 8 6 is configured to collectively hold any number of grains. In one embodiment, the number and length of each barrel 48 06 will be configured to have a cumulative grain holding capacity of 104 grains with at least -crystal grains 104. For example, the cumulative holding capacity may be 50,000 to 100,000 grains 104. The incoming multi-barrel die collets can be moved (automatically or otherwise) to one of the die distribution stations of the label assembly. An empty multi-barrel die collet can then be positioned adjacent to a new wafer on a separate die on a support surface to replicate the process. It is noted that other mechanisms and / or processes may alternatively be used in step 4904 to cause the grains to move into the hollow buckets, and in step 4908 to place the grains from each hollow bucket. For example, mechanical structures and forces, chemical processes and forces, electrostatic forces, adhesive materials, gas pressure systems, and further mechanisms and systems are all used by history. -(41) (41) 200412217 Debunker. 2.1.4 Grain transfer using a die frame According to one embodiment of the present invention, a "die frame" or "wafer strip" may be used to transfer most of the die 104 to a target surface. The die frame or wafer strip is formed directly from a wafer to hold the die of the wafer so that it can be easily transferred to the target surface. The die can be transferred from the die frame / wafer to an intermediate surface, or directly to a final surface, such as a substrate. Therefore, the die frame or wafer tape of the present invention allows fewer necessary manufacturing steps (when transferring the die to a substrate) compared to conventional transfer processes. For example, in a typical conventional process, the dies are individually transferred from the wafer to an intermediate transfer surface by a pick and place machine. The grains are then transferred from the intermediate surface to the final destination surface. This two-step process allows the die to be flipped. According to the present invention, the dies can be transferred directly from the die frame / wafer to the substrate without having to transfer to an intermediate surface. Furthermore, the grains can be flipped or not flipped by transfer, as desired. Note that the die frame / wafer tape of the present invention is hereinafter referred to as a die frame to simplify the description. The die frame can be formed in accordance with the process of the present invention, and some examples thereof are described below for the purpose of illustration, not limitation. 57A and 57B show a flowchart for manufacturing a die frame according to an exemplary embodiment of the present invention. The die frame of the present invention and further embodiments for manufacturing the die frame of the present invention will be clearly understood by those skilled in the relevant art based on the following discussion. Furthermore, FIGS. 6 and 6 8 A-B show exemplary flowcharts for transferring a die using a die frame, according to an exemplary embodiment of the present invention. Further examples of using the crystal frame of the present invention -45- (42) (42) 200412217 to transfer the crystal grains will be made clear to those skilled in the relevant art based on the following discussion. FIG. 57A shows a flowchart 5700, which provides exemplary steps for manufacturing a die frame according to an embodiment of the present invention. Flowchart 5 7 00 will be described below with reference to FIGS. 5 8-63 for the purpose of illustration. Flowchart 5 700 starts at step 5 7 02. At step 507, an annular groove is formed in a first surface of a wafer, surrounding most of the crystal grains formed in the first surface of the wafer. For example, FIG. 58 shows an example wafer 580. As shown in FIG. 58, an annular groove 5 8 02 has been formed in one surface of the wafer 5 8 00 immediately adjacent to an outer edge of the wafer 5 8 00. For example, the depth of the annular groove 5 802 may be approximately equal to the thickness of an integrated circuit die (such as die 1 04), which is formed in the surface of the wafer 5 8 0 (not shown in FIG. 5) . In the example of FIG. 58, the annular groove 5 8 02 is substantially circular or elliptical and is continuous. In alternative embodiments, the annular groove 5 8 02 may be formed in other shapes, including square and other polygons. Furthermore, the annular groove 5 8 0 2 does not necessarily need to be continuous, as shown in the example of FIG. 5, but may be replaced with a discontinuous one, and for example, may include a wafer 5 8 0 Two or more separate parts of the surface of 0. In step 504, the first surface of the wafer is scribed to form a trench grid. In the first surface of the wafer, most of the dies are separated. For example, Figure 59 shows wafer 5800 after it has been scribed. The scribe of wafer 5800 has produced a grid 5902 in the surface of wafer 5 800. The gate 5 902 is formed from most of the horizontal and vertical trenches 5904 formed in the surface of the wafer 5 8 00. For example, FIG. 59 shows the first trench 59 (MA, the second trench 5904B, the third trench 59CMC, and the fourth trench 59 (MD) of the gate 5902. In the gate 5902, a wafer 5800 (43 ) (43) 200412217 Most areas of the surface, where the grains 104 can reside. For example, Figure 5 9 shows the area and the first grains 104a of the first grains resident in the gate 5 902. The area of the two grains 104b. Note that the characteristics of the grains 104b are not shown in FIG. 58 and FIG. 59 °. FIG. 60 shows a cross-sectional view of a part of the wafer 5800. As shown in FIG. The grooves 5802 and the grooves 5904a and 59 (Mb have a thickness of 6002. For example, the depth 6002 may be 100 micrometers, or other thickness. The depth 6 0 2 is usually equal to or larger than the wafer 5 800 As shown in FIG. 60, the wafer 5800 has a thickness of 6004. The thickness 6004 may be any thickness of a conventional or special purpose wafer, which may be, for example, 600 to 700 microns. 5 7 0 6, a curable material is applied to the first surface of the wafer to substantially penetrate the annular groove and the groove of the gate. Figure 6 1 shows, for example, a curable material 6102, which The surface of the wafer 5800 has been applied to substantially penetrate the annular groove 5802 and the groove 5904 of the gate 59 Q2. The curable material 6102 substantially penetrates the annular groove 5 8 0 2 and the groove 5 9 0 4. For example, the curable material 6 1 0 2 can be inserted into the trench to a level lower than the surface of the wafer 5 8 0 0, to the same level as the surface of the wafer 5800 (as shown in FIG. 62). (Shown), or even slightly protrude from the surface of the wafer 5 8 0. The curable material 6 1 2 may be, for example, a polymer, epoxy, resin, urethane, glass, or other Materials. Various processes can be used to cause the curable material 61 02 to penetrate into the grooves 5 8 02 and 5 904 (when applied to the wafer 5 8 00) without leaving other materials on the surface of the wafer 5800. A substantial excess of the curable material 6102. For example, a vacuum source may be supplied to the opposite surface of the wafer 5 8 0, or to a strip ((44) 200412217

Such as the blue or green tape to which the wafer 5 8 0 is mounted), so that the curable material 6102 is pulled into the grooves 5802 and 5 904. In another embodiment, a gas source may direct a gas toward the surface of the wafer 5800 (which is coated by the curable material 6102) to blow, force, or push the curable material 6102. Enter the grooves 5 8 02 and 5 904. In another embodiment, the curable material 61 02 is applied to the surface of the wafer 5 8 0 by a spin coating method, so that one of the wafer 5 8 0 ’s rotating action causes the curable material 61 02 to move or "Wick" enters the grooves 5 8 02 and 5 904. The curable material 6102 can be coated in additional ways to penetrate the grooves 5802 and 5904, including by "squeegee" application, spraying, vapor deposition, physical deposition, or chemical deposition.

At step 5708, the curable material is caused to harden into a ring-shaped hardened material in the ring-shaped groove and a grid-shaped hardened material in the groove of the gate to form a grain frame. For example, in the examples of FIGS. 61 and 62, the curable material 6102 is caused to harden in the annular trench 5 8 02 and the trench 5904 of the gate 5902. In one embodiment, the hardened material is formed by hardening the curable material 6102 in a hardening process. Therefore, the curable material 6102 may be any hardenable material such as a hardenable polymer, an epoxy, a resin, a urethane, glass, or other materials. The curable material 61 02 may be a material that is caused to harden in different ways, including by heat, by allowing a sufficient amount of time for the curable material 6 1 02 to harden itself, by supplying light, or by other instructions Other ways described or otherwise known. At step 5 7 10, the wafer is thinned so that its grid-like hardened material removably holds most of the die. For example, FIG. 63 shows a die frame 6 3 0 0 formed according to the present invention. The die frame 6 3 0 0 contains a hardened hardened material 63 from the curable material 6102 in -48- (45) (45) 200412217 in the groove 5 8 0 2 and the groove 5904 in the gate 5902. ( M. The die frame 63 00 is further obtained from the thinning of the wafer 5 8 00. As shown in FIG. 63, the wafer 5 8 0 is submerged to form a die frame having a thickness of approximately 6 0 2 6 3 00. In an embodiment, the die frame 63 00 may be formed or thinned to have a thickness approximately equal to the depth 60 02, or a smaller thickness. Therefore, because the die frame 6 3 0 0 has approximately equal to or The thickness is less than the depth of 6 0 2, so the die frame 6 3 0 0 removably holds the die 1 4 in the corresponding opening 6 3 0 2. In other words, the die 104 can be easily removed from the opening. 6 3 0 2. For example, as shown in FIG. 63, the die frame 63 00 removably holds the die 104A in the opening 6302A, and removably holds the die 104B in an opening 6302B. The die frame 63 00 provides a support structure in the shape of an annular groove 5 8 02 and a groove 5904 'which can removably hold the grain 1 10 in the opening 6 3 0 2. The grain 104 can be removed from the grain Box 6300 Borrow Pushing, squeezing forward, or otherwise forcing it to leave from any surface of the grain frame 63 00 and onto another surface. Depending on which surface of the grain frame 104 is forced from which surface of the grain frame 63 00 will determine the crystal Whether the granule 104 is transferred to a surface with the pad facing up or down. Note that the wafer 5 8 00 can be thinned in step 5710 according to any conventional or otherwise known mechanism. Furthermore, note Its curable material 61 02 is selected so that it is not substantially adhered to the die 104, so that its die 104 can be easily removed from the die frame 63 00 and thus removably held therein. 57B shows a flowchart 5 720, which provides exemplary steps for manufacturing a die frame, according to another embodiment of the present invention. The flowchart 5 72 0 will be described with reference to FIGS. 64A-64C, 65A, and 65B. Next, Eli explains (46) 200412217

purpose. The flowchart 5 7 2 0 starts from step 5 7 2 2. In step 5 7 2 2, a wafer mounted on the surface of the adhesive is scribed so that the obtained number of grains is separated by extending and extending through the wafer to the trench grid on the surface of the adhesive. For example, FIG. 6 4A shows a scribe wafer 6 4 0 2 mounted on the adhesive surface 6 4 0 4. The adhesive surface 6404 is held in a wafer frame 6406. The wafer frame 6406 may also be referred to as a wafer carrier or a ribbon ring. For example, the adhesive surface 6 4 0 4 may be a green, blue, or other adhesive surface tape. The wafer frame 6406 holds and supports the adhesive surface 6404 in a tensioned manner so that the scribe wafer 602 can be accessed. Because wafer 64 02 has been scribed, wafer 64 02 has a grid 5902 (not shown in FIG. 64A) of trench 5 904, which separates die 104 of wafer 6402. The wafer 6402 is scribed so that its groove 5904 extends through the wafer 6402 to the adhesive surface 6 4 0 4. Therefore, the crystal grains 104 of the wafer 64 2 are individually mounted on the adhesive surface 6404. 64B shows a cross-sectional view of an example scribing wafer 6402 having three dies 104 separated by trenches 5 904. Note that the scribe wafer 602 is shown as having three dies 104 for illustrative purposes, not limitation purposes. Fig. 64C shows a perspective view of a portion of an example scribing wafer 6 4 0 2 mounted to the adhesive surface 6 4 0 4 'having a plurality of dies 104 separated by a trench 5904 of a gate 5 902. At step 5724, a curable material is applied to the scribe wafer to substantially penetrate the gate trench. For example, as shown in FIG. 65A, a curable material 6102 is applied to the scribe wafer 602 to partially or fully penetrate the trench 5904 between the dies 104. As shown in FIG. 65A, the curable material 61〇2a penetrates into the groove 5 between the crystal grains 104. In one embodiment, the 'curable material 6102 may be coated so that the curable material 6102b is present. A space 6 5 00 on the surface 6404 of the adhesive-50 · (47) (47) 200412217 is interposed between the outer edge of the wafer 6402 and the inner edge of the wafer frame 6406. Note that in one embodiment, the curable material 6102 may even partially extend within the crystal-frame 64 06, as shown in FIG. 65A, although it is not necessary. The curable material 6 1 02 may be applied in any manner described elsewhere in this specification, such as described above with reference to Figures 61 and 62, or others known. At step 5 726, the curable material is caused to harden into a grid-like hardened material in the trench of the grid. For example, the curable materials 6102a and 6 1 0 2b shown in FIG. 65A are caused to harden into a grid-shaped hardened material, such as the above description of the hardened material with reference to FIG. 6 3. At step 5 7 2 8, the surface of the adhesive is removed so that its grid-shaped hardening material removably holds most of the crystal grains. For example, FIG. 65B shows a grain frame 6300, which is obtained from the removal of the adhesive surface 64 04. The hardened material 63 04a appears between the grains 104, and the hardened material 63 04b exists outside the grains 104. The hardened material 63 04 removably holds the grains 104 'in the shape of a grid of the grain frame 63 00, as described above. Note that the adhesive surface 6404 can be removed or separated, and peeled, chemically dissolved, or otherwise removed from the grain frame 6 3 0 0 〇 Note that the grain frame 6 3 00 can be formed to Pad up or pad down mode. For example, flowchart 5 72 0 may include steps similar to steps 702, 704, and 706 shown in flowchart 700 of FIG. 7 to facilitate reversing the orientation of die 104 before execution of step 5 7 2 2. Therefore, the pads of the 'grain 104' can face or face away from the adhesive surface 6404, depending on the orientation chosen. The structure of the die frame 6300 has several advantages. For example, 'the shape of the ring shape (48) (48) 200412217 formed in the ring groove 5 8 02 part of the grain frame 63 00 allows a one-week holding mechanism (such as a clamp or clamp) to reliably hold the grain frame 63 0 0 when it is used, for example, to transfer grains. The part of the grain frame 63 0 0 formed in the gate shape in the gate 5 9 2 allows the holding of the crystal grain 104 and the crystal grain 104 can be removed quite easily, as described below. The structure of the die frame 6 300 has further advantages. Note that in some embodiments, the ring portion of the die frame 6300 may be unnecessary and not present. Preferably, an excess of the curable material 6 102 is not left on the surface of the wafer 5800. In an embodiment, the flowchart 5 7 0 0 may include an additional step, which is performed before step 5 70 4, wherein a protective material layer is applied to the surface of the wafer. The protective material may, for example, be a photoresist material, or other protective material, which may be spin-coated or otherwise applied to the surface of the wafer. Therefore, in an embodiment, the flowchart 5700 can also include a step in which the protective material is removed from the surface of the wafer. For example, removing the protective material from the wafer may cause the excess curable material 6 1 02 to be removed in its hardened state or in its non-hardened state (ie, before or after step 5 7 08). For example, the wafer 5800 can be exposed to a solvent, or it can be coated with a solvent to dissolve the protective material from the surface of the wafer 5800. The protective material may be removed from the wafer 5 800 by other means known to those skilled in the relevant art. The die frame 63 00 may be used to transfer the die 104 to a subsequent destination or transfer surface. The subsequent surface may be an intermediate surface, such as a blue or green strip or other intermediate surface known or not elsewhere in this specification, or it may be used to transfer grain 104 to a final destination surface, such as a substrate. Furthermore, the die frame 63 00 allows precise transfer of the die. For example, since the positions of the crystal grains which can be removably held in the crystal grain frame 6 3 00 are accurately known, there is an accurate registration of the crystal grains. Therefore, expensive optical and / or other types of registration systems may not be required to find and accurately place the die. Fig. 66 shows a flowchart 6600, which provides the steps of using a frame to transfer the majority of grains to a surface, according to an embodiment of the invention. Note that it is optional that the steps of Flowchart 6 600 are shown enclosed in dotted lines. Flowchart 6600 will be described with reference to FIG. 67 for illustrative purposes. Further structural embodiments will make those skilled in the related art understand clearly based on the following discussion.

Flowchart 66 00 starts at step 6602. At step 6602, a grain frame is positioned adjacent to a surface of a substrate band containing a plurality of substrates such that one of the plurality of grains removably held in the grain frame is a corresponding one of the plurality of substrates of the substrate band. Base. For example, FIG. 67 shows a system 6700 that uses a die frame 63 00 to transfer die to a surface. The system 6700 includes a die frame 63 00, a stamping member 2406, a die frame holder 6702, a first reel 6 7 06, a second reel 6708, and a base tape 6710. As shown in FIG. 67, the substrate tape 6710 includes a plurality of substrates 6712a-c. The substrate tape 6710 may include any number of substrates 6712. As shown in FIG. 67, the grain frame 6300 is positioned next to one surface of the base tape 6710. The die frame 6300 is positioned next to the substrate tape 6 7 10 such that one of the grains 104 can be punched from the die frame 6 300 to one of the substrate tapes 6712, as described below. At step 666, the grain system is transferred from the grain frame to the corresponding substrate next to it. As shown in Fig. 67, the crystal grains 104 have been transferred from the grain frame 6 3 0 0 to one surface of the substrate 6712b of the base tape 6 7 10. For example, as shown in FIG. 67, -53- (50) (50) 200412217 die 104 may be pressed onto die 6712a from die frame 63 00 (which removably holds die 104). For example, a stamped member 2406 may be used to stamp the die 104 from the grain frame 63 00 onto the substrate 6712a. In further embodiments, other mechanisms may be used to transfer the die 104 from the die frame 63 00 to a substrate 6712. Most of the grains can be transferred from the grain frame 63 00 to the base tape 6710 in this manner. At step 6606, the base tape is incremented. For example, as shown in the example of FIG. 67, the substrate tape 6710 may include a plurality of substrates 6712 arranged in series. The base band 6 7 1 0 can be incremented according to a reel-to-reel system, such as that shown in FIG. 6. In FIG. 67, a first reel 6706 can supply a base tape 6 7 10 to a second reel 6708, which receives the base tape 6710. By rotating the first and second reels 6706 and 6708, the substrate tape 6710 can be incremented to move the next substrate 67 12 to be positioned to receive the die 104 from the die frame 63 00. Other mechanisms can be used to increase the base band 6 7 1 0. Furthermore, in other embodiments, the substrate tape may include an N x M array of substrates 67 12, where N > 1 and M > 1 instead of serially aligned substrates 6 7 1 2. At step 66 08, the grain frame is positioned immediately adjacent to the surface of the substrate band so that another grain of the plurality of grains removably held in the crystal grain frame is next to the next corresponding of the majority of the substrate of the substrate band. Base. For example, as shown in Fig. 67, the die frame 6 3 0 0 is held in the die frame holder 6 7 2. The die frame holder 6 702 can be moved laterally relative to the substrate tape 67 10 to position the next die 104 on a next substrate 6712, such as a substrate 6712a or a substrate 6712b. Because the size of the die 104 is well known, the die frame holder 6702 can be repositioned by the width or length of the die 104, instead of being registered by an optical and / -54- (51) 200412217 or other The system type (which must determine the location of a die) is repositioned. For example, in an embodiment, for a 500x500 micron · size die, the die frame holder 67 02 may be moved by 500 micron (possibly plus the width of the groove 5 904) to place the next die. 104 is in the position for transfer. Note that the invention can be applied to grains of any size.

At step 6 6 1 0. Therefore, in this way, most of the crystal grains 104 can be transferred from the crystal grain frame to the next corresponding substrate from the crystal grain frame 6 3 00 to the corresponding substrate 67 10 of the substrate tape 67 12 on. In this way, for example, a large number of label substrate / die combinations can be generated in a fairly fast manner with fewer steps than conventional processes.

Note that its multiple die frame 6300 can be placed into a stack, and its die 104 can be transferred from the stack to a destination surface. The die 104 may use a stamping mechanism, a vacuum / gas source, and any other mechanism described elsewhere in this specification or otherwise known. For example, FIG. 6 A shows a flowchart 6 800, which provides a step of using a die frame stack to transfer most of the die to a surface, according to another embodiment of the present invention. Note that it is an optional flow. The steps in Figure 6 800 are shown enclosed in dotted lines. Further structural embodiments will be apparent to those skilled in the relevant art based on the following discussion. The flowchart 6 8 0 0 will be described in conjunction with FIG. 6 9 for the purpose of illustration. Flowchart 6800 starts at step 6 802. At step 68 02, a die frame stack is formed, each die frame includes a grid with a plurality of rectangular openings, wherein each opening of the majority of the rectangular openings removably holds a die, and the corresponding die frame in the stack corresponds The rectangular openings are aligned in a row to form a plurality of rows of openings. For example, FIG. 69 shows a stack 6902 of die frames. Stack 6902 contains most -55- 200412217 j i

I I (52)

I; grain box 63 00. For illustrative purposes, the stack 6902 is shown as containing six die frames 6 3 0 a-f, but may contain any number of two or more die frames 6 3 0 0. As described above, each of the grain frames 6 3Ό 0 includes a hardened material 63 04 configured in the form of a gate 5 9 0 2. A plurality of openings 63 02 exist in each die frame 63 00, each of which holds a die 104 removably. The die frame 6 3 00 is aligned so that its corresponding opening 6 3 0 2 forms a row in the stack 6 9 0 2 (not shown in FIG. 6 9). At step 6 8 04, a removably held in the opening The grains in are transferred from at least one of the plurality of rows to the destination surface. In other words, one or more dies 104 are transferred from the stack 69 02 from one or more rows to the destination surface. The die 104 may be transferred from the stack 6902 in several ways. For example, as shown in FIG. 69, one or more stamped members 24 06 may be applied to corresponding rows of openings 63 02 in the stack 6902. A stamping member 2406 pushes the stack 6 9 02 to move the die 104 from the individual row of openings 6302 in the stack 6902 to the destination surface. A stamped member 2406 may be stepped to push out a single crystal grain 104 at a time. Any number of stamped members 2406 can be operated in parallel, such as the stamped members 2406a-c shown in the example of Figure 69, to increase the grain transfer rate. Other methods can be used to transfer the grains from the stack 6 9 0 2 [04] Including methods using a gas or vacuum source (to apply gas pressure, electrostatic force), picking and placing devices, and methods described elsewhere in this specification, or other known methods. In the following, reference is made to FIG. 6 8B to describe in detail another method of this method. Θ Note that the destination surface may be a base band or structure, as shown in FIG. 6 -56- (53) (53) 200412217. On the other hand, the destination surface may be a stamped or wafer carrier (as shown in Fig. 22), any intermediate or intermediate surface (such as a green or blue tape), or any other surface. Furthermore, the die 104 can be transferred to the destination surface with pads facing up or down, according to the orientation of the stack 6902. Stack 6902 can be inserted into a die placement device that holds and aligns individual die frames 630 in a stack and allows die to be transferred therefrom. FIG. 6B shows further details of an exemplary embodiment of the flowchart 6800. FIG. 68B will be described in conjunction with FIG. 70 for illustrative purposes. FIG. 70 shows a system 7000 for transferring grains from a grain frame 6300 using a multi-barrel grain transfer device 4802, according to an exemplary embodiment of the present invention. As shown in FIG. 70, the multi-barrel grain transfer device 4 8 02 contains a majority of the barrels 4 8 06a-c. Furthermore, the system 7000 includes a stack 6902 of a die frame 63 00, which includes first, second, third, and fourth die frames 63 0 Oa-d. The stack 6902 may contain any number of die frames 63 00. At step 6 802, a die frame stack is formed, each die frame includes a grid with a plurality of rectangular openings, wherein each opening of the most rectangular openings removably holds a die, and the corresponding die frame in the stack corresponds to The openings are aligned in a row. For example, as shown in FIG. 70, the die frames 63 00a-d of the die frame stack 6902 are aligned so that most of their rows 7002 are formed. Each row 7002 contains a die removably held in an opening in each die frame 63 00a-d. In step 6812, each of the hollow buckets of most hollow buckets is applied to one of the openings of the die frame stack Individual lines. For example, as shown in FIG. 70, a first row 7002a has the first bucket 4 8 06a to which it is supplied, and a second row 7002b (54) (54) 200412217 has the second bucket 4 to which it is supplied. 8 06b, and a third row 7002c has a third bucket 4806c to which it is supplied. At step 6 8 1 4, the crystal grains removably held in the openings of the individual opening rows are caused to move into the hollow barrels in parallel. As shown in Fig. 70, the crystal grains 104, which are removably held in the crystal grain frames 63 00a-63 00dz, are caused to be moved into the barrel 4 008. The die 104 may be caused to move into the hollow barrel 4806 by vacuum, by gas pressure, by a mechanical mechanism, or by other mechanisms described elsewhere in this specification or otherwise known. At steps 6816 ', steps 6812 and 6814 are repeated until one or more barrels 4806a-c become full, until stack 69 02 runs out of grains, or when any number of grains 104 have been moved from stack 6902. At step 68 1 8, the grains from each hollow bucket are placed on the surface until the stack of grains contained in each hollow bucket is substantially exhausted. Therefore, the grains 104 from the hollow barrel 4 8 06 can be placed on the destination of the target surface 'until the grains 104 in the hollow barrel 4 8 0 6 are exhausted, or until the surface is full of grains 104 Or until any number of grains 104 have been transferred. As mentioned above, the 'grain 104 may be placed from the barrel 4806 by mechanical mechanisms, by vacuum, by gas pressure, or by other mechanisms described elsewhere in this specification or otherwise known. Therefore, the 'grain frame 63 00' can be used in a variety of ways to transfer grains to a target surface. Furthermore, the grain frame 6300 can be combined with any other grain transfer mechanism and process described elsewhere in this specification to provide an enhanced grain transfer mechanism and process. Further exemplary die frame embodiments are described in the following sections for illustrative purposes. -58- (55) (55) 200412217 2. 1. 4. 1 Die frame formed in a tape structure: In one embodiment, the die frame can be formed with a flexible: flat, tape structure similar to the "blue tape" used to mount wafers / die , Or "green tape". The tape structure is manufactured to contain a hardenable material or substance. A wafer is mounted to the tape structure and is separated into a plurality of grains. The tape structure is processed so that a hardened gate structure is formed. In the belt structure, it removably holds most of the crystal grains. FIG. 7 shows a flow chart 7 100, which provides steps for manufacturing the crystal grain frame or the crystal grain supporting frame, according to one of the present invention. Example embodiment. Flowchart 71 00 is described with reference to Figures 72, 73 A, 73B, and 74 for illustrative purposes. Flowchart 7100 starts at step 7102. At step 7102, a wafer containing most die Mounted to the surface of a strip structure. For example, as described above, FIG. 4B shows a wafer 400 mounted to an example support surface 404. As shown in FIG. 4A, the wafer 400 includes a plurality of dies 104. In this embodiment, The wafer 400 is mounted in a manner similar to the tape structure. The tape structure The surface and / or the wafer 400 may have an adhesive material applied thereon to adhere the wafer 400 to a tape structure. The tape structure is described in more detail below. At step 7 04, a trench gate is Most die formed on the surface of the wafer to separate the tape structure. For example, FIG. 72 shows a wafer 400 mounted on the surface 7202 of a tape structure 7200, according to an exemplary embodiment of the present invention. The wafer 400 is separated The majority of the die 104 on the band structure 7200, according to any conventional wafer separation technology, includes scoring or separating the wafer 400 by sawing, laser, mechanical or chemical etching, and other techniques. Separation (56) (56) 200412217 produces a trench 5 904 and a grid 5 9 02 in wafer 400. The band structure 7200 is a flexible structure that contains a hardened or curable material that can be processed by several techniques Is caused to be hardened. For example, the band structure 7200 may include a material that may be caused to be hardened by supplying light (including by supplying ultraviolet (UV) or other frequency band light). On the other hand, the band structure 7200 may include a Material, which can be supplied by solid, liquid Or gas is caused to harden, and these solid, liquid, or gas systems interact with the material of the belt structure 7200 to harden or solidify a portion of the belt structure 7200. All or part of the belt structure 7200 may include that it may be caused to harden For example, FIG. 73A shows a cross-sectional view of one of the belt structures 72 00, which is a single layer structure with a curable or hardenable material penetrating. On the other hand, FIG. 73B shows that the belt structure 7200 is a multilayer structure, It includes a layer 7302 of a curable or hardenable material. The layer 7302 can be made as a tape structure 7200, or can be spread, coated, or sprayed onto the tape structure 7200. For example, the curable or hardenable material may be a photoresist material applied to the belt structure 7200 or an epoxide. The tape structure 7200 may further include a layer of paper, tape, polymer, or other material to provide structural support. Note that steps 7102 and 7104 may be performed by a structure described herein or otherwise known; and may be performed by the same structure, or different structures. For example, a wafer preparation module can perform steps 71 02 and 7104. An example of this wafer preparation module is further described in Chapter 3 below. 0-3 · 2. The wafer preparation module may include a wafer supply device for supplying a wafer to the tape structure 7200, and / or may include a wafer cutting device for separating / cutting the wafer on the surface 7 202 . (57) (57) 200412217 • At step 7106, the belt structure which can be accessed through the trench of the gate is caused to harden into a gate structure. For example, Figure 74 shows an example system 7400. A portion of the band structure 7200 that is made accessible through the trench 5904 of the gate 5902 is hardened into a gate-like structure. As shown in Fig. 74, a hardener source 74 02 transmits a hardener 7404 toward the separated wafer 400 and the tape structure 7200. Due to the location of the grain 104, the hardener 7404 penetrates the groove 5 904 to reach the band structure 7200 and is located on the peripheral region. Therefore, the portion of the belt structure 7 2 0 which can be accessed through the trench 5 904 and located in the peripheral region is caused to harden, and it is shown individually as the hardened trench portion 7410 and the hardened peripheral region 7420. The part of the belt structure 7200 which cannot access the hardener 7404 (because the supply of the hardener 7404 is blocked by the grain 104) is not hardened. For example, FIG. 74 shows an example portion 7430 of its unhardened belt structure 7200. The hardener source 74 02 may include various sources of hardeners, depending on the type of hardened or curable material in the belt structure 7 2 0. For example, the hardener source 7 402 may include a light source and individual optical devices, including a UV light source or an infrared (IR) light source, for materials that harden upon exposure to light. For example, the hardening material may be a photoresist material. In this embodiment, the hardener 7404 can be light, such as light in the UV, IR, or other frequency bands. On the other hand, the hardener source 74 02 may include a gas or liquid supply to supply or spray the gas or liquid toward the separated wafer 400 and the tape structure 7 200. For example, the hardener 7404 may be an epoxide of a two-group epoxide to react with the corresponding epoxide contained in the band structure 7200. Other hardener sources and hardeners can also be used in the present invention, including heat sources. Thus, a die frame 7460 is formed. The crystals formed according to the flowchart 7100 (58) (58) 200412217 The grain frame 7460 removably holds the majority of the crystal grains 104. Therefore, one or more of the plurality of grains 104 can be moved from the grid structure of the grain frame 7460 to a target surface. FIG. 75 shows a die frame 7460 that includes an example grid structure 7500. The die frame 7460 is held by the die frame holder 6 702. As shown in Fig. 75, a die 104 is moved from a die frame 7460 to a substrate 6712. In the example of FIG. 75, the die 104 is moved by a stamped member 2406. The die 104 may be moved from the die frame 7460 in a variety of ways, including by stamping, action by gas, and any other means described elsewhere in this specification or otherwise known. Note that each of the non-hardened regions 743 0 may or may not be split from the grain frame 7460 when individual grains 104 are moved from the grain frame 74 60. The die frame 74 6 0 can be used to transfer the die 104 to a target surface in a variety of ways, including any method for transferring die described elsewhere in this specification. Furthermore, the die frame 7460 may be combined with any other die transfer mechanism and process described elsewhere in this specification to provide an enhanced die transfer mechanism and process. 2. 1. 4. 2 A die frame formed by a loosely encapsulated hardenable material. In one embodiment, a die frame can be formed on a flat tape structure, similar to a "blue tape" used to mount wafer die. Or "green belt." The band structure is made to contain an encapsulated, loosenable material or substance. A wafer is mounted to a tape structure and is separated into a plurality of dies. The process of separating the wafer into dies will destroy the tape structure, which relaxes the encapsulation material. The slack material hardens to produce a hardened gate structure on the band structure, which can be removed to retain most of the grains -62- (59) (59) 200412217. The remaining band structure can then be optionally removed. FIG. 76 shows a flowchart 7600, which provides steps for manufacturing such a die frame or a crystal support frame, according to another exemplary embodiment of the present invention. Flowchart 7600 will be described below in conjunction with Figures 7 7-8 2 for illustrative purposes. The flowchart 7600 starts at step 7602. At step 7602, a wafer containing a plurality of dies is mounted to a surface of a tape structure, wherein the tape structure includes an encapsulated relaxable or hardenable material. For example, as described above, FIG. 4B shows a wafer 400 mounted to an example support surface 404. In this embodiment, the wafer 400 is similarly mounted to a tape structure. However, in the current embodiment, the tape structure includes an encapsulated hardened or curable material that can be relaxed and hardened. For example, FIG. 77 shows a surface 7706 mounted to a belt structure 7702. FIG. The surface 7706 and / or the wafer 400 may have a coated adhesive material for bonding the wafer 400 to the surface 7706. The band structure 7702 may be a single or multilayer structure. An exemplary multilayer structure with a band structure 7 702 is shown in FIG. 77. As shown in Figure 77, the band structure 7702 includes a layer of 7704. Layer 7740 contains an encapsulated hardened material that can be relaxed and hardened. For example, layer 7704 may contain a gas, liquid, or solid that is relaxed from layer 7704 and will harden when a suitable agent is applied to layer 77 04. The operation and structure of layer 7 704 is further described below. The band structure 7702 is generally flexible, but may also be rigid. As shown in the example embodiment of FIG. 77, the tape structure 7702 may include a tape layer 7708 for additional structural support, although the tape layer 7708 is not necessary. The tape layer 7 70 8 can be made from a variety of materials. For example, the tape layer 7708 may be paper, poly (60) (60) 200412217 compound, base material 'glass, metal or metal / alloy combination, plastic, or other suitable substance, or a combination thereof. At step 7604 ', the trench grid of the wafer is formed to separate most of the grains on the surface of the strip structure, which includes damaging the surface of the strip structure in the trench such that the hardened material is encapsulated and hardened into a grid in the trench The hardened material is in the trench of the gate. For example, FIG. 78 shows a cross-sectional view of a wafer 400 separated into dies 104 on a surface 7 706 with a structure 7702, according to an exemplary embodiment of the present invention. The separation of wafer 4 0 0 produces a trench 5 9 0 4 of grid 5 9 0 2 (similar to that shown in Figure 5 9). The wafer 400 can be separated into a plurality of dies 104 on the band structure 77 02. According to any conventional wafer separation technology, including scribe or separation of the wafer by sawing, laser, mechanical or chemical etching, and other techniques Round 400. For example, FIG. 78 shows a cross-sectional view of a wafer 400 that is separated into a plurality of dies 104 using a laser 78 10 according to an embodiment of the present invention. FIG. 7-9 shows a perspective view of a portion of a wafer 400 separated into a plurality of dies 104 using a saw 7910, according to another embodiment of the present invention. As described in step 7604, forming the grid of the trench destroys the surface of the band structure in the trench, so that the encapsulated hardening material in the trench is hardened into a grid-like hardened material. For example, as shown in FIGS. 78 and 79, the surface 7706 of the band structure 7 702 is broken. One example notch in surface 7706 is indicated as a notch 7820. A sufficient notch 7 820 is formed in the surface 7706 along the length of each groove 5 9 04 so that the hardened material it encapsulates substantially penetrates each groove 5 904. The notch 7 820 may have any width and depth required to relax the sufficient amount of the encapsulated hardened material. According to the specific separation technique used to generate the gap 7 8 20, then (61) (61) 200412217 The individual gap 7 8 2 0 can be an opening, a hole, a crack, or a scratch in the surface 7706. Figures 78 and 79 each show a loose hardened material 78 02 which is partially or completely inserted into a separate groove 5 904. Notch 7 820 Relaxation hardening material 7 8 02 Comes with layer 7702 of structure 7 7 04. The hardening material 7802 may be a gas, a liquid, a solid, or a combination thereof. For example, the material encapsulated in layer 7704 can be relaxed into a foam, gel, epoxide, or other liquid. The hardened material 7 8 0 2 can be caused to harden in a variety of ways. For example, in one embodiment, the hardened material 7 802 will harden when it encounters ambient air, or when it encounters a selected gas or combination of gases. In another embodiment, the hardened material 7 8 02 is hardened when it is heated by a specific wafer separation technique, such as by contact with a beam of a laser 7810 or by the action of a saw 7910. In another embodiment, the hardened material 7802 is hardened when it contacts or mixes with an epoxide or other material. In another embodiment, the layer 7 7 0 4 may include microencapsulated balls or beads that contain a hardened material. Balls or beads can rupture when the layer 7 704 is broken by a specific wafer separation technique. The hardened material is relaxed from the balls or beads and hardens when heated, when exposed to air or other gases, or otherwise. FIG. 80 shows a perspective view of a part of a separate wafer 400 on the band structure 7702. A hardening material 7802 is used to form a grid-shaped hardening material 8000 around a plurality of grains 104, according to an exemplary embodiment of the present invention. Note that steps 7602 and 7604 can be performed by the structure described herein or other known structures, and can be performed by the same structure or different structures ^ For example, 'a wafer preparation module can perform step 7 6 〇 2 and 7 6 〇4. This example (62) (62) 200412217 wafer preparation module is further described in Chapter 3 below. 0-3. 2. The wafer preparation module may include a wafer supply device for supplying wafers to the belt structure 7 7 02, and / or may include a wafer cutting device for separating / cutting wafers on the surface 7706. And used to damage the surface 7 7 06. For example, wafer cutting equipment may include a laser 78 10 and / or a saw 7910. At step 7606, the band structure is removed so that its grid-like hardened material removably holds the majority of the crystal grains. FIG. 81 shows a die frame 8100 with its own structure 7 7 02 removed, according to an exemplary embodiment of the present invention. The band structure 77 02 may be stripped, dissolved, engraved, or otherwise removed. The die frame 8100 is formed according to the flowchart 7600. The die frame 8100 can be used in a variety of ways to transfer grains to a target surface, including any of the ways described herein to transfer grains. Furthermore, the die frame 8 100 may be combined with any other die transfer mechanism and process described elsewhere in this specification to provide an enhanced die transfer mechanism and process. 2. 2 Post-processing As described with reference to Figure 3, in step. In step 3 10, post-processing is performed to complete the assembly of the RFID tag 100. FIG. 54 is a flowchart illustrating the execution of step 310 in more detail. This operation starts at step 5402 in which perforations are formed on the label substrate 1 1 6 between the labels 100. These perforations allow the user to separate the label 100 for individual placement on each object. At step 5404, each tag 100 is inspected to ensure proper assembly. This step includes ensuring proper placement of the associated electronic circuit 106 and die 104. (63) (63) 200412217 At step 5406, the continuous roll of the label 100 is cut and configured as a thin sheet. At step 5 40 8, the two adhesive substrates are applied to the label substrate 116. This adhesive substrate causes the tag 100 to be mounted to an object, such as a book or consumer product. 3. 〇 Label assembly equipment The present invention also relates to a label assembly equipment. Figures 5 5 and 56 are two tag assembly equipment utilizing the technology described herein. 3. 1 "Pad-Up" Assembly Equipment Figure 55 shows a "Pad-Up" Assembly Equipment 5500. Assembly equipment 5 5 00 Assemble the label in a "pad-up" manner, as described here. Therefore, the assembly device 5 5 0 0 performs the steps described herein with reference to FIGS. 3 and 11. The assembly equipment 5500 includes a support surface supplier 5502, a support surface collector 5 504, a wafer preparation module 5 5 06, a first die transfer module 5508, a transfer surface supplier 5510, and a transfer surface. Collector 5512, a second die transfer module 5 5 1 4, a label substrate supplier 5 5 1 6, a post-processing module 5518, an adhesive coating module 5 520, and a printing module 5 522 The support surface supplier 5502 and the support surface collector 5504 convey the support surface 404 in a certain direction, as shown by the arrow in FIG. 55. These components are scrolls. However, other suitable conveying mechanisms may be used. The wafer preparation module 5 5 0 6 performs steps 3 04 and 3 06. Therefore, the wafer preparation-67- (64) (64) 200412217 module 5 5 06 supplies the wafer 400 to the support surface 404. In addition, the wafer preparation module 5 5 06 separates most of the dies 104 on the wafer 400. The wafer preparation module 5 5 06 is implemented with an appropriate mechanism and a scribing device such as a laser. The first die transfer module 5 5 0 8 transfers the die 104 from the support surface 4 0 4 to the transfer surface 1 202. That is, the first die transfer module 5 5 0 8 performs step 1 102. Therefore, the first die transfer module 5 508 includes a piston, a roller, an air jet, and / or a punching device. The first die transfer module 5 5 0 8 may include an adhesive tape, a punched tape, a multi-barrel conveying mechanism, and / or a die frame, and other components associated with these components, such as the above, which are further used in the die Grain transfer. The first die transfer module 5 50 8 also includes elements for releasing the die 104 from the support surface 4 4 such as a heating element and / or a radiating device ° transfer surface supplier 55 10 and a transfer surface collector 5512 conveys the transfer surface 1202 in a certain direction, as shown by the arrow in FIG. 55. These components are scrolls. However, other suitable conveying mechanisms may be used. The second die transfer module 55 14 transfers the die 104 from the transfer surface 1 202 to the label substrate 1 16. Therefore, the second die transfer module 5 5 1 4 performs step 1 106. Therefore, the second die transfer module 55 to 14 includes a piston, a roller, an air jet, and / or a punching device. The second die transfer module 5 5 1 4 may include an adhesive tape, a stamped belt, a multi-barrel conveying mechanism, and / or a die frame, and other components associated with these components, such as the above, which are further used in the die Grain transfer. The second die transfer module 5 5 1 4 also includes elements for releasing the die 104 from the support surface 404, such as heating elements and / or radiation devices. -68- (65) (65) 200412217 The label substrate feeder 5 5 1 6 conveys the label substrate 1 1 6 toward the post-processing module group 5 5 1 8 as shown by the arrow in Figure 5 5. . . The label substrate feeder 5516 includes a roller. However, other suitable conveying mechanisms may be used. The post-processing module 5 5 1 8 performs the post-processing operation described here with reference to step 3 1 0. The adhesive application module 5 5 20 applies adhesive to the label substrate 116 according to step 1 104. To perform this step, the adhesive application module 5 5 20 includes a sprayer. However, the adhesive coating module 5 5 2 0 may use other suitable devices to perform this step. The printing and coating module 5 5 22 prints the relevant electronic circuit 106 and applies a coating to the label substrate 1 1 6 according to steps 1 108 and 1 1 10. Therefore, the printing and coating module 5 5 22 includes a screen printing module and a sprayer. However, the printing and coating module 5 5 22 may utilize other suitable devices such as inkjet, thermal spray equipment, and / or donation devices. 3. 2 "Pad-down" assembly equipment Figure 5 6 shows a "Pad-down" assembly equipment 5 600. The assembly device 5 6 00 assembles the label "pad down" as described here. Therefore, the assembly apparatus performs the steps described herein with reference to FIGS. 3 and 16. The assembly equipment 5 600 includes a support surface supplier 5 5 02, a support surface collector 5504, a wafer preparation module 5506, a first die transfer module 5 508, and a first transfer surface supplier. 5 5 i 〇, a second die transfer module 5 602, a second transfer surface supplier 5604, a first transfer surface collector 5112, a second transfer surface collector 5606, a label substrate supply ( 66) (66) 200412217 device 5 6 0 8, a third die transfer module 5 6 1 0, a post-processing module 5 5 5 6, an adhesive coating module 5 6 2 8 and a printing Module 5 6 2 6. The support surface supplier 5502 and the support surface collector 5504 transport the support surface 404 in a certain direction, as shown by the arrow in FIG. 56. These components are scrolls. However, other suitable conveying mechanisms may be used. The wafer preparation module 5 5 06 performs steps 3 04 and 3 06. Therefore, the wafer preparation module 5 506 supplies the wafer 400 to the support surface 404. In addition, the wafer preparation module 5 5 06 separates most of the dies 104 on the wafer 400. The wafer preparation module 5 5 06 is implemented with an appropriate mechanism and a scribing device such as a laser. The first die transfer module 5 5 08 transfers the die 104 from the support surface 404 to the transfer surface 1 202. That is, the first die transfer module 5 5 0 8 performs step 1 620. Therefore, the first die transfer module 5 5 08 includes a piston, a roller, an air jet, and / or a punching device. The first die transfer module 5 5 0 8 may include an adhesive tape, a stamped tape, a multi-barrel conveying mechanism and / or process, and / or a die frame, and other components associated with these components, such as the above It is further used for grain transfer. The first die transfer module 5 5 0 8 also includes elements, such as heating elements and / or radiation devices, for releasing the die 104 from the support surface 4 0 4. The first transfer surface supplier 5510 and the first transfer surface collector 5512 transport the transfer surface 1202 in a certain direction, as shown by an arrow in FIG. 56. These components are scrolls. However, other suitable conveying mechanisms may be used. The second grain transfer module 5 6 0 2 transfers the grains 104 from the transfer surface 1 2 0 2 to the second transfer surface 1 202. Therefore, the second die transfer module 5 602 performs step 1 622. Therefore, the second die transfer module 5602 includes a piston, a roller (67) (67) 200412217, an air jet, and / or a stamping device. The second die transfer module 5 602 may include an adhesive tape, a stamped tape, a multi-barrel conveying mechanism and / or process, and / or a die frame, and other components associated with these components, such as the above-mentioned further use For grain transfer. The second die transfer module 5 602 also includes elements for releasing the die 104 from the transfer surface 1 202, such as heating elements and / or radiation devices. The second transfer surface supplier 5510 and the second transfer surface collector 5512 transport the transfer surface 12 02 in a certain direction, as shown by an arrow in FIG. 56. These components are scrolls. However, other suitable conveying mechanisms may be used. The label substrate feeder 5 60 8 conveys the label substrate 116 toward the post-processing module 5 5 5 6 as shown by the arrow in FIG. 56. The label base feeder 5 60 8 includes a roller. However, other suitable conveying mechanisms may be used. The third die transfer module 56 10 transfers the die 104 from the second transfer surface 1 20 2 to the label substrate 116. Therefore, the third die transfer module 5610 performs steps 1 608. Therefore, the third die transfer module 56 10 includes a piston, a roller, an air jet, and / or a punching device. The third die transfer module 5 6 10 may include an adhesive tape, a stamped tape, a multi-barrel conveying mechanism and / or process, and / or a die frame, and other components associated with these components, such as the above It is further used for grain transfer. The third die transfer module 56 1 0 also includes components for releasing the die 104 from the second transfer surface 1202, such as heating elements and / or radiation devices. The adhesive application module 5 62 8 applies adhesive to the label substrate 1 16 according to step 1 606. To perform this step, the adhesive application module 5 628 includes a sprayer. However, the adhesive coating module 5 62 8 may utilize other suitable (68) (68) 200412217 devices to perform this step. The printing module 5 626 prints the relevant electronic circuit 106 according to step 1606. Therefore, the printing module 5 62 6 includes a screen printing assembly and a sprayer. However, the printing and coating module 5 626 may benefit from other suitable devices, such as inkjet, thermal spray equipment, and / or dedication devices. The post-processing module 5 5 5 6 performs the post-processing operation described herein with reference to step 310. Note that its "pad-down" device 5 600 (and other assembly equipment described herein) can also be adapted to transfer die directly from a support surface to a substrate, as taught by those skilled in the art Will understand. 4. 0 Conclusion Although several embodiments of the invention have been described above, it should be understood that they are provided by way of example only, and not limitation. Those skilled in the relevant art will understand that changes in form and details can be implemented therein without departing from the spirit and scope of the invention. Therefore, the present invention should not be limited by any of the above exemplary embodiments, but should be defined only by the scope of the following patent applications and their equivalents. [Brief Description of the Drawings] The following drawings (which are incorporated herein and form part of the description) illustrate the invention, and together with its description, further explain the principles of the invention and enable those skilled in the relevant art to make and use the invention. Fig. 1A shows a block diagram of an exemplary RFID tag, according to an embodiment of the invention -72- (69) (69) 200412217. 1B and 1C show detailed views of an exemplary RFID tag according to an embodiment of the present invention. 2A and 2B show plan and side views of an exemplary die individually. 2C and 2D show a portion of a substrate having a die mounted thereon, according to an exemplary embodiment of the present invention. Fig. 3 is a flowchart illustrating a continuous roll (roll) label assembling operation. 4A and 4B are respectively a plan view and a side view of a crystal circle having multiple crystal grains attached to a support surface. Fig. 5 is a view of a wafer having separated dies attached to a support surface. Figure 6 shows a flow chart that provides the steps of transferring grains from a first surface to a second surface, according to an embodiment of the invention. Figure 7 shows a flow chart that provides the steps of using an adhesive surface to transfer the majority of the crystal grains from the first surface to the second surface. Figures 8-10 show views of most grains using an adhesive to transfer from the first surface to the second surface, following the process of Figure 7. Figure 11 is a flow chart illustrating the transfer of a "pad up and die to a label substrate. Figures 12A and 12B are the planes and sides of most of the grains in contact with a support surface and a transfer surface, respectively. Views. Figure 13 is a view of the majority of the die mounted on a transfer surface. 14 is a contact with a transfer surface and a label substrate with "pad up (70) (70) 200412217, 'oriented die. Its view. Figure 15 is a view of a "pad-up" oriented die mounted to a label substrate. Figure 16 is a flow chart illustrating the transfer of a "pad down and the die to a label substrate. Figure 17 is a view of the majority of the grains in contact with the major and minor transfer surfaces. Figure 18 A view of the majority of the die mounted to the primary transfer surface. Figure 19 is a view of a die that contacts the "pad down" orientation of a transfer surface and a label substrate. Figure 20 is a view of a die mounted to a label substrate. View of the "pad down" oriented grains. Figure 21 shows a flowchart that provides the steps of transferring a majority of grains from a first surface to a second surface using a parallel stamping process, according to an embodiment of the invention. Figures 22-29 show views of the majority of the dies transferred from the first surface to the second surface using the stamping process of Figure 21. Figure 30 shows a flow chart that provides the steps for assembling an RFID tag according to the present invention An example. Figure 3 1-36 shows a view of the majority of the dies transferred from a wafer carrier to a substrate using the stamping process of Figure 30. Figures 37-39 show a view of the substrate structure containing most individual substrates. Figure 4 0-45 shows the use of Figure 30 View of the majority of the grains that were transferred from a wafer carrier -74 ^ (71) (71) 200412217 to a substrate by a stamping process. Figure. 46 and 47 show views forming electrical conductors on a substrate. . 48A and 48B show views of an example multi-barrel grain transfer device. Figure 49 shows a flowchart that provides the use of multi-barrel grain transfer equipment to.  Example steps for transferring grains. Figure 50 shows a cross-sectional view of a multi-barrel transfer grain applied to the first surface. Figures 51 and 52 show cross-sectional views of a multi-barrel transfer device that transfers grains to a second surface. Figure 53 shows a cross-sectional top view of an example bucket with grains in it, according to an embodiment of the invention. Figure 54 is a flowchart illustrating a post-processing operation. Figure 5 5 and 56 are block diagrams of the label assembly device. Figures 5A and 57B show a flowchart that provides steps for manufacturing a die frame according to an embodiment of the present invention. 58-62 show an exemplary view of a wafer when the manufacturing process steps are not performed. When formed into a die frame, according to an embodiment of the present invention. Fig. 63 shows a cross-sectional view of an exemplary die frame according to an embodiment of the present invention. Figures 6 A-64C show views of a scribed wafer mounted on the surface of the adhesive (and held on the die frame). 65A and 65B show the scribe wafers of FIGS. 64A-64C, which are coated with a curable material, according to an exemplary embodiment of the present invention. FIG. 66 shows a flowchart, which provides exemplary steps for transferring a die using a die frame -75-(72) (72) 200412217, according to an embodiment of the present invention. Fig. 67 shows a block diagram of a die transferred from a die frame to a base tape, according to an exemplary embodiment of the present invention. Figures 6 8 A and 6 8 B show flowcharts that provide exemplary steps for transferring a die using a die frame, according to an embodiment of the present invention. FIG. 69 shows a system for transferring dies from a die frame stack to a base structure, according to an exemplary embodiment of the present invention. FIG. 70 shows a block diagram of a die transferred from a die frame stack into a multi-barrel die transfer apparatus, according to an exemplary embodiment of the present invention. FIG. 7 1-A flowchart illustrating steps for manufacturing a die frame according to an exemplary embodiment of the present invention. Figures 72, 73 A, and 73B show views of a wafer with separated dies mounted to the surface of an adhesive with a structure, according to an exemplary embodiment of the present invention. Fig. 74 shows a system for forming a hardened grid in a band structure which supports the separated grains shown in Figs. 7 1-73, according to an exemplary embodiment of the present invention. FIG. 75 shows a die that is moved from a hardened gate (as shown in FIG. 74), according to an exemplary embodiment of the present invention. FIG. 76 shows a flowchart that provides steps for manufacturing a die frame according to an exemplary embodiment of the present invention. FIG. 7 shows a wafer mounted on the adhesive surface of a tape structure including an encapsulated hardening material according to an exemplary embodiment of the present invention. FIG. 78 shows a laser which is used to separate the die of the wafer of FIG. 77 and is used to harden the encapsulating hardened material. According to an example implementation of the present invention (73) 200412217 Example 0 (Saw) a perspective view, which is used to separate a part of the wafer die of Figure 77. And used to cause the encapsulation hardening material to harden into a grain frame 'according to an exemplary embodiment of the present invention. FIG. 80 shows a perspective view of a portion of the wafer of FIG. 77, which has been separated from the tape structure and is formed with a die frame formed from an encapsulated hardened material, according to an exemplary embodiment of the present invention. Figure 81 shows a die frame formed from an encapsulated hardened material that has been separated from the belt structure, according to an exemplary embodiment of the present invention. The invention will be described with reference to the following drawings. In the drawings, similar reference numbers generally indicate identical, functionally similar, and / or structurally similar elements. The left-most digit of the reference number represents the graphic in which the element first appears.

[Illustration of drawing number] 100 RFID tag 1 04 m 106 electronic circuit 114 antenna 116 tag base 204a-d contact pad 21Oa-d contact area 400 wafer 4 0 2 a-η 歹! J -77- (74) 200412217 404 support Surface 802-Surface 804 Second surface 1202 Transfer surface 1204 Width 1402 Scoring 1502, 1504 Surface 1702 Secondary transfer surface 1902 Stamping member 2200 Stamping tape 2202 Cell 2204 Guide hole 23 02 Stamping tape body 23 04 Adhesive tape 2402 Stamping equipment 2404 Body 2406 Stamping member 2802 Base structure 2804 Filler material layer 3402 Filler material 3 602 Screed element 3 604 Filler material 3 902 Guide hole 4 1 02 Stamping member

-78- (75) 200412217 44 0 2 cavity 4 7 02 electrical conductor 4 8 02 multi-barrel crystal pine transfer equipment 4 8 04 body 4 8 0 6 barrel 4 8 0 8 end 48 10 vacuum source 5 002 stack 5 0 04 End 5 102 Cell 5 3 02 Internal surface 5 3 04 Channel 5 5 0 0 Assembly equipment 5 5 0.2 Support surface supplier 5 5 04 Support surface collector 5 5 06 Wafer preparation module 5 5 0 8 First die Transfer module 55 10 Transfer surface feeder 55 12 Transfer surface collector 55 14 Second die transfer module 55 16 Label substrate feeder 55 18 Post-processing module 5 520 Adhesive coating module 5 5 22 Printing module

-79 (76) 200412217 5 5 5 6 back 5 600 group 5 602 5 604 5 5 606 5 608 56 56 5 626 5 5 628 5 5 00 5 5 02 02 5 902 grid 5 904 trench 6002 deep 6004 thickness 6 1 02 can 63 00 crystal 6 3 02 open 63 04 hard 6402 crystal 6404 stick 6406 crystal 65 00 empty 6 7 00 series processing mold assembly equipment two grain transfer module two transfer surface supplier two transfer surface collector Signed the base supplier three die transfer module brush module coating agent coating module round groove groove degree curing material grain frame Die frame clamp 6 7 06 First reel 6 7 08 Brother—reel 67 10 base tape 67 12 base 69 02 stack 7 000 system 7002 row 7200 belt structure 7202 surface 7 3 02 layer 7400 system 7 4 0.2 hardener source 7404 harden Agent 74 10 Groove section 7420 Peripheral area 7 4 3 0 Example section 7460 Grain frame 7 5 00 Grid structure 7702 Band structure 7704 Layer 7 706 Surface 7 708 Band layer 7 8 02 Hardened material (78) 200412217 7 8 10 Thunder Shot 7 820 Notch 79 10 Saw 8 0 0 0 Grid-shaped hardened material 8 100 Grain frame

-82-

Claims (1)

200412217 ⑴ Pickup, patent application scope 1. A method for assembling most radio frequency identification (RFID) tags, including: (a) transferring most dies from a support surface to a wafer carrier, which has a majority of access to the wafer A cell on a first surface of the carrier such that each of its crystal grains resides in a corresponding cell of one of the plurality of cells and is recessed in a corresponding cell associated with the first surface; and (b) coating The filling material is in each cell of the majority cell to substantially cover each crystal grain in the corresponding cell. 2. The method of claim 1 of the patent scope of claim §, further comprising: (c) scraping the first surface of the wafer carrier so that the filling material in each cell is substantially flush with the first of the wafer carrier surface. 3 · If the scope of patent application is the first! Item (b), wherein step (b) comprises coating a non-conductive filling material into each cell of the plurality of cells to substantially cover each crystal grain. 4. The method according to item 丨 of the patent application scope, wherein step (b) comprises coating an anisotropic conductive filling material into each cell of the majority cell to substantially cover each crystal grain. 5. The method according to the scope of the patent application, wherein step (b) comprises coating an isotropic conductive filling material into each cell of the majority cell to substantially cover each crystal grain. -83- (2) (2) 200412217 6. According to the method of claim 1 in the scope of patent application, each die has at least one contact pad on the first surface, wherein step (a) includes: inserting each die into the corresponding The first surface of the cell such that it has at least one contact pad faces away from the cell. 7. The method according to item 6 of the patent application scope, further comprising: (c) positioning the first surface of the wafer carrier next to a surface of a base structure having a majority of the label base portion; (d) one of the stamped wafer carriers The second surface is adjacent to a position opposite to each cell of the plurality of cells to move each crystal grain away from the corresponding cell, so that the filling material covering the first surface of each crystal grain contacts a corresponding label substrate of one of the plurality of label substrate portions; and (e) Mounting the first surface of each die to the corresponding label substrate such that at least one contact pad of each die is electrically coupled to at least one corresponding contact pad of the corresponding label substrate. 8. The method according to item 7 of the patent application scope, wherein step (e) comprises hardening the filling material covering the first surface of each crystal grain to mount each crystal grain to a corresponding label substrate. 9. The method according to item 8 of the patent application, wherein the filling material is an anisotropic conductive material, and the hardening step includes: flash hardening filling material. 10. The method according to item 8 of the patent application, wherein the filling material is a thermally hardenable epoxide, wherein the hardening step includes: supplying heat to harden the thermally hardenable epoxide. -84-(3) (3) 200412217 1 1 · The method according to item 8 of the patent application, wherein the filling material is a% sound hardenable epoxide, wherein the hardening step includes: supplying a sound source to harden the sound Hardenable epoxy. 12. The method according to item 8 of the patent application, wherein the filling material is an electron beam hardenable epoxide, wherein the hardening step includes: supplying an electron beam to harden the electron beam hardenable epoxide. 13. The method according to item 8 of the patent application range, wherein the filling material is an ultraviolet (UV) light wavelength hardenable epoxide, wherein the hardening step includes: supplying UV light to harden the UV light wavelength hardenable epoxide. 1 4 · The method according to item 8 of the scope of patent application, wherein the filling material is-infrared (IR) light wavelength hardenable epoxide, where the hardening step @ 含 ·· Supply IR light to harden IR light wavelength hardenable ring Oxide. 15. The method of claim 8 in which the filling material is a pressure-hardenable epoxide, wherein the hardening step includes: supplying a pressure between each crystal grain and the corresponding label substrate to harden with a hardening pressure Epoxide. 16 · The method according to item 8 of the patent application scope, wherein the hardening step comprises: causing the filling material to shrink to reduce the distance between each die and the corresponding label substrate to facilitate electrically coupling at least one contact of each die Pad to at least one corresponding contact pad of the corresponding label substrate. 1 7 · The method according to item 8 of the patent application, wherein the filling material comprises (4) (4) 200412217 conductive microspheres to provide conductivity, wherein the hardening step includes: causing the filling material to shrink, which generates pressure on each Between the die and the corresponding label substrate, the microspheres are deformed at least to electrically couple at least one contact pad of each die to at least one corresponding contact pad of the corresponding label substrate. 18. The method according to item 7 of the scope of patent application, wherein most of the label base portions of the base structure are aligned in series, further comprising: (f) before step (c), separating the base structure from a second base structure, It contains an array of one part of the label base. 19. The method according to item 7 of the scope of patent application, wherein the majority of the label base portion of the base structure is configured as a single row of the label base portion, wherein step (c) includes: aligning the base structure and the wafer carrier. 20. The method of claim 19, wherein the aligning step includes: mechanically aligning the base structure and the wafer carrier. 2 1 · The method of claim 20 in the scope of patent application, wherein the mechanically aligning step includes: using a first round having a spacer bolt connected to a spacer hole in the wafer carrier to align the wafer carrier; using A second round having a spacer bolt connected to a spaced hole in the base structure to align the base structure, wherein the first and second rounds are synchronized 2 2. As in the method of claim 19 of the patent application scope, wherein The aligning step includes: optically aligning the base structure and the wafer carrier. -86- (5) (5) 200412217 23. The method according to item 1 of the patent application scope, wherein each die has at least one contact pad placed on the first surface, wherein step (a) includes: inserting each die The first surface of the corresponding cell so that it has at least one contact pad faces the cell. 2 4. The method according to item 23 of the patent application scope, further comprising: (c) positioning the first surface of the wafer carrier next to a surface of a base structure having a majority of label base portions; (d) stamping the wafer carrier A second surface is adjacent to each cell of its majority cell to move each crystal grain to leave the corresponding cell and enter one of the corresponding cavities in a surface of one of the corresponding label substrates, so that its filling material is substantially Into a gap in a corresponding cavity between the outer edge of each die and a corresponding cavity wall, so that the first surface of each die and one surface of the filling material are substantially flush with the corresponding label A surface of a substrate. 25. The method of claim 24, further comprising: (e) electrically coupling at least one contact pad of each die to at least one corresponding contact pad on a surface of a corresponding label substrate. 26. The method of claim 25, wherein step (e) includes: depositing a conductive material between each at least one contact pad of each die and at least one corresponding contact pad on a corresponding label substrate surface. 27. The method of claim 25, wherein the depositing step comprises: printing a conductive material interposed between each at least one contact pad of each die and at least one corresponding contact pad on a corresponding label substrate surface. -87- (6) (6) 200412217 2 8. The method of claim 25, wherein the depositing step comprises: using a vapor deposition process to coat each contact pad of the conductive material between each of the grains And at least one corresponding contact pad on the corresponding label substrate surface. 29. The method according to item 2 of the patent application, wherein the height of each crystal grain is approximately equal to half the height of the corresponding cell. The step (b) includes: inserting the remaining half of the height corresponding to the cells of each grain with a filling material. The method according to item 1 of the patent application scope further includes: (c) in step (a) Previously, most dies were separated from a wafer mounted to a support surface so that most of its dies were separated and mounted on the support surface. 3 1. The method of claim 30, further comprising: (d) mounting the wafer to a support surface before step (c). 3 2 · The method according to item 1 of the patent application scope, further comprising: (c) forming a plurality of cells in the wafer carrier before step (a). 3 3 · The method according to item 32 of the scope of patent application, wherein step (c) comprises: forming a plurality of openings aligned in series by the wafer carrier, the openings being on the first surface and the second surface of the wafer carrier ; And supplying an adhesive structure to the second surface of the wafer carrier to cover most of the serially aligned openings on the second surface of the wafer carrier. 34 · —A method for assembling most radio frequency identification (RFID) tags, including: • 88-(7) (7) 200412217 (a) positioning a support surface next to the surface of a stamping strip so that it is mounted on the support surface Each grain of the majority of the grains on the first surface is a corresponding cell immediately adjacent to the majority of the cells in the surface of the stamping strip; and (b) the grains of the majority of the grains are simultaneously transferred from the support surface into the immediate vicinity Corresponding empty cells. 35. The method of claim 34, wherein the majority of the crystal grains are substantially equal to one of every N crystal grains of the total number of crystal grains mounted on the first surface of the supporting surface, wherein step (a) includes : Positioning the support surface immediately adjacent to the surface of the stamping strip, such that each crystal grain of one of every N grains mounted to the first surface of the support surface is adjacent to a corresponding cell of the majority of cells in the surface of the stamping strip. 36. The method of claim 34, wherein step (b) includes: 3 7. The method of claim 36, further comprising: (c) increasing the punching belt relative to the support surface to place it Each grain of the other majority of grains mounted to the first surface of the support surface is positioned adjacent to the corresponding cell of one of the other majority of cells in the surface of the stamping strip; and (d) simultaneously transferring the other majority of grains from the support surface Each of the grains enters the adjacent corresponding cell. 3 8. The method of claim 37, further comprising: (e) repeating steps (c) to (d) until substantially all of the crystal grains mounted to the support surface before step (a) have been transferred to self-supporting surface. 39. The method according to item 34 of the scope of patent application, wherein each of the plurality of grains has at least one contact pad placed on a first surface, further including -89, (8) (8) 200412217 containing: (c) Prior to step (a), the majority of the crystal grains on the support surface are oriented so that the first surface of each of the crystal grains of the majority of the crystal grains faces the support surface. 40. The method of claim 34, wherein each of the plurality of grains has at least one contact pad placed on a first surface, further comprising: (c) prior to step (a), orienting The majority of the grains on the support surface are such that the first surface of each of the plurality of grains faces away from the support surface. 4 1. A method for assembling most radio frequency identification (RFID) tags, comprising: (a) positioning a first surface of a support surface to contact a first surface of substantially each die mounted to the second support surface, So that the first surface of each of the crystal grains mounted on the second support surface becomes the first surface mounted on the first support surface; (b) increasing the distance between the first support surface and the second support surface The distance is such that substantially each grain becomes disassembled from the second support surface; (c) Positioning the first support surface next to the surface of a stamping belt so that it is mounted to the majority of the grains on the first surface of the first support surface The second surface of each grain is a corresponding cell immediately adjacent to the majority of cells in the surface of the stamping strip; and (b) simultaneously transferring each of the plurality of grains from the first support surface into the adjacent corresponding cell. 4 2 · The method according to item 41 of the scope of patent application, wherein step (d) includes: -90- (9) (9) 200412217 supplying a stamping mechanism with a plurality of substantially coplanar stamping parts to the first wiper One of the second surfaces, wherein one of the plurality of stamped portions corresponds to each of the plurality of cells. 43. The method according to item 42 of the scope of patent application, further comprising: (e) incrementally punching each of the grains of the other majority of the grains on the first surface of the first support surface to mount it to the first support surface Positioning the corresponding cell of one of the other majority cells in the surface immediately adjacent to the stamping zone; and (f) Simultaneously transferring each of the other majority of crystal grains from the first support surface into the corresponding cell of the other majority of cells . 44. The method according to item 43 of the patent application scope, further comprising: (g) repeating steps (e) to (f) until substantially all of the crystals mounted on the first surface of the support surface in step (a) are obtained. The granules have been transferred from the first support surface. 4 5 · The method according to item 41 of the patent application scope, further comprising: before step (a), orienting a plurality of grains on the second support surface so that at least one contact pad thereof is placed on each grain of the plurality of grains On the first surface. 46 · —A method for assembling most radio frequency identification (RFID) tags, comprising: (a) coating a filler material on a surface of a base structure having a base portion of the majority of the tags; (b) positioning a support surface immediately adjacent On the surface of the base structure such that each of the plurality of grains mounted to a first surface of the support surface is immediately adjacent to a corresponding label substrate of one of the majority of the label substrate portions; and -91-(10) (10) 200412217 ( b) Simultaneously transfer each of the plurality of grains from the supporting surface to the immediately adjacent corresponding label substrate. 47. The method of claim 46, wherein step (c) comprises: supplying a stamping mechanism having a plurality of substantially coplanar stamping portions to a second surface of the support surface, wherein one of the majority of the stamping portions The stamped part corresponds to each air cell of the majority. 4 8. The method of claim 46, further comprising: hardening the filling material. 4 9. The method of claim 46, wherein most of the crystal grains are all crystal grains mounted on the first surface of the supporting surface, and step (c) includes: simultaneously transferring all the first surfaces mounted on the supporting surface. Of grains. 50. The method of claim 46, wherein most of the crystal grains are a part of the crystal grains mounted on the first surface of the supporting surface, and the step (0) comprises: simultaneously transferring the first crystal grains mounted on the first surface of the supporting surface. Part of the crystal ik 丄 5 1. A system for assembling most radio frequency identification (RFID) tags, including: a transfer mechanism for transferring most of the die from a support surface to a wafer carrier, wherein the wafer carrier has a majority of Access to a cell on a first surface, wherein each of the plurality of crystal grains is transferred to reside in a corresponding cell of one of the plurality of cells and is recessed in a corresponding cell associated with the first surface; and -92- (11) (11) 200412217 A coating mechanism is used to coat the filling material in each cell of a plurality of cells so as to substantially cover each crystal grain in the corresponding cell. The system further comprises a flattening element which is supplied to the first surface of the wafer carrier so that the filling material in each cell is substantially flush with the first surface of the wafer carrier. 5 3 · If applied System of patent scope 51 It further comprises: a positioning mechanism for positioning the first surface of the wafer carrier adjacent to a surface of a base structure having a plurality of label base portions. (E) Mounting the first surface of each die to the corresponding label base. 5 4 The system according to item 51 of the scope of patent application, further comprising: at least one stamping member, which stamps a second surface of the wafer carrier adjacent to a position opposite to the cell of the majority cell to move each grain away from the corresponding cell. , So that the filling material covering the first surface of each die contacts one of the corresponding label substrates of the majority of the label substrate portion. 5 5. The system according to item 54 of the patent application scope further includes: a hardening mechanism for filling Material to mount the first surface of each die to the corresponding label substrate, so that at least one contact pad of each die is electrically coupled to at least one corresponding contact 'pad of the corresponding label substrate. The system further includes: at least one stamping member, which stamps a second surface of the wafer carrier adjacent to each cell of the plurality of cells to move each die away The corresponding cell enters a corresponding cavity in a surface of one of the corresponding label substrates of one of the majority of the label substrate portions, so that its filling material substantially penetrates into a corresponding space between the outer edge of each grain and a corresponding cavity wall. The gap in the cavity, so that the first surface of each of the grains of »93- (12) (12) 200412217 and the filling material are substantially flush with a surface of the corresponding label substrate. 5 7 · 如The system for applying for patent No. 56, further includes: an electric coupling mechanism "for electrically cooking at least one contact of each die to at least one corresponding contact pad on the surface of the corresponding label substrate. 5 8 · For example, the system of claim 51 in the patent application scope further includes: a mounting mechanism for mounting the wafer on the supporting surface. 59. The system according to item 58 of the scope of patent application, further comprising: a separating mechanism for separating the majority of the crystal grains from a wafer mounted on the supporting surface so that most of the crystal grains are separated and kept mounted on the rubbing surface. 6 〇 The system according to item 51 of the patent application scope, further comprising: a forming mechanism for forming a wafer carrier having a plurality of cells. 6 1 · A method for transferring a plurality of grains from a first surface to a second surface, comprising: (a) supplying each of the plurality of hollow barrels in parallel to an individual crystal residing on the first surface (B) causing individual grains to move into each hollow barrel in parallel; (c) repeating steps (a) and (b) until each hollow barrel contains a predetermined number of grain stacks; and (d) parallel from each hollow barrel A grain is placed on the second surface until the grain stack contained in each hollow bucket is substantially exhausted. 62. The method according to item 61 of the patent application scope, wherein step (b) includes: supplying a vacuum force to the first end of each hollow barrel to cause individual crystal grains to move -94-(13) (13) 200412217 into each hollow The second end of the barrel. 6 3 · The method according to item 62 of the patent application, wherein step (d) includes: modifying the vacuum force. 64. The method of claim 62, wherein step (a) includes: supplying the first end of each of the plurality of hollow barrels in parallel to the second surface to place individual grains from each of the hollow barrels to the second surface . 65. The method of claim 62, wherein step (a) includes: supplying the second end of each of the plurality of hollow barrels to the second surface in parallel to place individual grains from each of the hollow barrels to the second surface . 6 6 · The method according to item 61 of the scope of patent application, wherein step (b) comprises: · using a gas pressure to cause individual grains to move into each hollow barrel. 67. The method of claim 66, wherein step (d) includes: modifying the gas pressure. 68. The method of claim 61 in the scope of the patent application, wherein step (b) includes: using a mechanical force to cause individual crystal grains to move into each hollow. 69. The method of claim 61 in the scope of patent application, wherein step (b) includes: using a chemical force to cause individual grains to move into each hollow barrel. -95- (14) 200412217 7 0 · The method of item 61 in the scope of patent application, wherein step (b includes: using an electrostatic force to cause individual crystal grains to move into each hollow bucket. 7 1 · as in the scope of patent application No. 6 The method of item 1, wherein step (b includes: using an adhesive material to cause individual crystal grains to move into each hollow barrel 7 2 · The method of item 1 of the scope of patent application, wherein step (d includes: allow from each hollow barrel The placed grains are fixed to the second surface. 7 3. A system for transferring the majority of grains from a first surface to a first surface, including: a plurality of hollow barrels, which are aligned to be substantially parallel, the Each of the hollow barrels of the plurality of barrels is configured to contain a plurality of piles of grains; a vacuum device which is supplemented to the first end of the hollow barrels; wherein the second end of the hollow barrels is supplied in parallel to the There is an individual crystal grain on the surface; wherein the vacuum device supplies a vacuum force to the end of the hollow barrels so that the individual crystal grains are moved into the second of the hollow barrels in parallel and the vacuum force is modified and The hollow buckets are Should go to the second to place the individual grains from the hollow barrels in parallel on the second. 7 4. The system as claimed in item 73 of the patent application scope, wherein the first end of each is supplied to the second For the two surfaces, the () bag) and (0) bags from the hollow buckets are packaged. The two sheets are hollow and the first first end; the surface empty buckets are individually (15) (15) 200412217 grains are placed in parallel on the second surface. 75. The system of claim 73, wherein the second end of each of the hollow barrels is supplied to a second surface to place the individual grains from the hollow barrels on the second surface in parallel. 76. The system of claim 73, wherein the individual grains reside on the first surface of the plurality of grains corresponding to the first surfaces of the hollow barrels, and the second ends of the hollow barrels are sequentially The grains are supplied in parallel to the corresponding majority grains, and when the vacuum force is supplied to move the respective grains of the corresponding majority grains to the second end of the hollow barrels to form grains stacked on the hollows In the bucket. 77. The system of claim 76, wherein the hollow buckets are supplied in parallel to most target areas on the second surface to sequentially place each of the corresponding majority of grains on the second surface on. 78. The system of claim 73, wherein the first surface is a scribe wafer. 79. The system of claim 73, wherein the first surface is a support surface. 80. The system of claim 73, wherein the second surface is an intermediate surface. 81. The system of claim 73, wherein the second surface is a substrate. 82. The system of claim 8, wherein the substrate comprises a plurality of antenna substrates. -97- (16) (16) 200412217 8 3. — A method for forming a die frame, including: (a) forming an annular groove in the first surface of the wafer, surrounding the first Multiple grains formed in one surface; (b) scribe the first surface of the wafer to form a trench grid in the first surface of the wafer, which separates most of the grains, where the gate system intersects with the ring (C) apply a curable material to the first surface of the wafer to substantially penetrate the annular groove and the gate groove; (d) cause the curable material to harden into a ring-shaped hardened material on the ring In the grooves and hardened into a grid-like hardened material in the grooves of the grid; and (e) thinning the wafer so that its grid-like hardened material removably holds most of the crystal grains. 84. The method according to item 83 of the patent application scope, further comprising: (f) before step (b), coating a protective material layer on the first surface of the wafer ° 8 5 The method of item, further comprising: (g) removing the protective material from the first surface of the wafer after step (d) to remove at least some excess curable material. 86. The method of claim 85, wherein step (g) comprises: dissolving the protective material in a solvent. 87. The method of claim (1), wherein step (f) includes: spin-coating a protective material layer on the first surface of the wafer. -98-(17) 200412217 Wherein the protective material is the step (f) of the package 8 8 · The method of photo-resistance in item 8 of the patent scope of Patent No. 5 靑, where step ⑺ includes: 89 on the first surface. The method of claim 84 includes: scribe the first surface of the wafer to a desired depth. For example, the method of item 84 of the Shenyang patent scope, wherein the curable material is a polymer, and step (c) includes: A polymer is applied to the first surface of the wafer to substantially penetrate the annular trench and the gate trench. 91. The method of claim 84, wherein the curable material is a hardenable material, and step (d) includes: hardening the hardenable material. 92 · —A kind of crystal frame formed according to the method of item 83 of the scope of patent application. 9 3. —A method for assembling most radio frequency identification (R FID) curtains, comprising: (a) positioning a die frame next to the surface of a substrate tape containing a plurality of substrates so that they are removably held on A grain of the majority of the grains in the grain frame is a corresponding substrate immediately adjacent to the majority of the substrates in the substrate band; and (b) the grains are transferred from the grain frame to the immediately corresponding substrate. 9 4. The method according to item 93 of the patent application scope, further comprising: (c) increasing the base band; (d) positioning the grain frame close to the surface of the base band so that it can be moved -99- (18) (18) 200412217 Another grain of the majority of the grains held in the grain box is next to the next corresponding substrate of the majority of the substrate in the base band; and (e) transfer of another grain from the grain box to the next next The corresponding substrate 95. The method of claim 94, further comprising: (f) repeating steps (c), (d), and (e). 9 6. The method according to item 94 of the scope of patent application, further comprising: (f) repeating steps (c), (d), and (e) until it is removably held by a majority of the grains in the grain frame All grains have been transferred to the corresponding substrate in one of the substrate strips. 97. The method of claim 93, wherein step (b) comprises: punching the die from the die frame to the adjacent corresponding substrate. 98. The method of claim 93, wherein step (a) comprises: locating a die frame, wherein the die frame includes a grid having a plurality of rectangular openings, and each of the plurality of rectangular openings removably holds a Grain. 9 9. The method of claim 93, wherein step (b) includes: supplying gas pressure to move the die from the die frame to the corresponding substrate next to it. 100 · —A method for transferring a majority of grains to a destination surface, including: (a) forming a stack of grain frames, each grain frame including a plurality having-100- (19) (19) 200412217 € b _ C] 'The grid in which the openings of most of the rectangular openings are removably held -ΗΘΗ k' wherein the corresponding rectangular openings of the die frames in the stack are aligned to form a flat opening to form the majority of opening rows; and (b) from At least one of the plurality of rows is transferred to be removably held on an IS α Φ $ die to the destination surface. 1 () 1. The method according to item 100 of the patent application scope, wherein step (b) includes = (1) supplying a stamped member to the first open D row of the most open rows of the die frame stack; and (2) ) Is punched with a stamping member so that one of the crystal grains removably held in a rectangular opening of the first opening is transferred to the destination surface. 102. The method according to item 101 of the patent application scope, wherein step (b) further comprises: (3) repeating step (2) until the crystal grains in the first open row have been exhausted. 0103 The method of claim 100, wherein step (b) includes: (1) supplying each stamped member of the majority of stamped members to individual opened rows of the majority of the die frame stacked rows; and (2) stamping by majority Each stamped component of the component is stamped such that a crystal grain that is removably held in a rectangular opening of an individual opening row is transferred to the destination surface. 1 0 4 · The method according to item 10 of the patent application range, wherein step (b) further comprises: 101-(20) (20) 200412217 (3) Repeat step (2) until the crystal grains in the stack have been substantially Exhaustion 〇105. The method of claim 100, wherein step (b) includes: (1) supplying a hollow barrel to the first opening row of most of the opening rows of the grain frame stack; (2) making it available The grains held in the openings of the first opening row are moved into the hollow bucket in a removable manner; (3) steps (1) and (2) are repeated until the hollow bucket contains a grain stack; and (4) the grains are placed from the hollow bucket Go to the destination surface until the grain stack contained in the hollow bucket is exhausted. 106. The method of claim 100, wherein step (b) comprises: (1) supplying each of the plurality of hollow barrels in parallel to the individual open rows of the plurality of open rows of the grain frame stack; (2) causing The crystal grains removably held in the openings of the individual opening rows are moved into the hollow barrels in parallel; (3) repeating steps (1) and (2) until each hollow barrel contains a predetermined number of grain stacks; and (4) The grains are placed on the destination surface from each hollow bucket until the grain stacks contained in each hollow bucket have been substantially exhausted. 107. The method of claim 100, wherein the destination surface is an intermediate surface, wherein step (b) includes: -102-(21) (21) 200412217 Transferring a removable ground from at least one of the majority rows Grains held in an opening to the intermediate surface. 108. The method of claim 100, wherein the destination surface is a substrate, wherein step (b) includes: transferring from at least one of a plurality of rows to a removably held in an opening; Grain to substrate. 10. The method of claim 108, wherein the substrate includes a plurality of antenna substrates, and wherein step (b) includes: transferring from at least one of the plurality of rows a grain removably held in an opening To one of the plurality of antenna substrates on the corresponding antenna substrate. 1 1 0. The method of claim 100, wherein each crystal grain has at least one contact pad placed on a first surface of one of the crystal grains, wherein step (b) includes: from at least one row of the plurality of rows A die removably held in an opening is transferred to the destination surface so that at least one contact pad thereof is in contact with the destination surface. 1 1 1 The method of claim 100, wherein each die has at least one contact pad disposed on a first surface of one of the die, wherein step (b) includes: At least one row transfers a die removably held in an opening to the destination surface so that at least one of its contact pads faces away from the destination surface. 1 1 2 · The method according to item 100 of the patent application scope, further comprising: (c) before step (b), inserting a die frame and stacking the die frame at -103-(22) (22) 200412217 Device. 1 1 3 · A grain frame device comprising: a grid having a plurality of rectangular openings passing through; and a plurality of grains, wherein each of the openings of the plurality of rectangular openings is removable. A corresponding crystal of one of the plurality of grains is held in place grain. 1 1 4 · The device according to item 113 of the scope of patent application, further comprising: a ring installed around the grid. 1 15. The device according to item 14 of the scope of patent application, further comprising: a holding mechanism that holds the ring and allows the positioning of the grid during the transfer of the majority of the grains from the majority of the rectangular openings. 1 1 6 · The device according to item 115 of the scope of patent application, wherein the grid is substantially planar, and wherein the grid has a thickness substantially equal to the thickness of the majority of grains. 117. The device of claim 113, wherein the grid comprises a polymer. 1 1 8 The device according to item 113 of the patent application scope, wherein the grid comprises at least one of an epoxide, a resin, a urethane, and a glass. 1 1 9 The device as claimed in claim 113, wherein the gate is formed around the majority die, and the majority die resides in a wafer. 1 2 0 · — A method for forming a die frame, including: (a) scribe a wafer mounted on the surface of the adhesive so that most of the resulting die is separated by a trench grid, the The trench grid extends through the wafer to the surface of the adhesive; (b) Supply a curable material to the scribe wafer to substantially penetrate the trench of the grid -104-(23) (23) 200412217; (c) Causing the curable material to harden into a grid-like hardening material in the grooves of the grid; and (d) removing the surface of the adhesive so that its grid-like hardening material removably holds most of the crystal grains. 1 2 1 · The method according to item 120 of the scope of patent application, further comprising: (e) before step (b), holding the surface of the adhesive with a supporting structure. 1 2 2 The method of claim 121, wherein step (b) includes: inserting a curable material into a space between the outer edge of the scribe wafer and the inner edge of the support structure. 12 3. The method of claim 122, wherein step (c) comprises: causing the curable material in the space to harden into a ring-shaped hardening material, which supports the grid-like hardening material in it. 124 · —A method for transferring the majority of grains from a first surface to a second surface, including ... (a) positioning the second surface next to the first surface with the majority of the grains mounted; (b) minus The distance between the first surface and the second surface is small until most of the crystal grains contact the second surface and are mounted to the second surface due to the adhesion of the second surface; and (c) removing the first surface and the second surface , While most of the grains remain An-105- (24) 200412217 mounted on the second face. 1 2 5. The method according to item 124 of the patent application scope, further comprising: (d) before step (b), applying an adhesive material to the second surface so that the adhesion of the first surface is greater than that of the first surface Adhesiveness. 12 6. The method according to item 124 of the patent application scope, further comprising: before step (a), directional majority mounting to the first surface So that at least one contact pad of each of the plurality of grains faces away from the first surface. 127. The method of claim 126 in item 1, wherein step (c) includes: $ the first surface and the second surface, and most of the dies are mounted on the second surface with the pad facing down. 128. The method of claiming in scope of patent application, further comprising: (d) prior to step (a), directional majority mounting to the first surface 曰 曰 & U § (at least one of the contact pads of each of the crystal grains of the majority of the crystal grains faces the first surface. 1 2 9. The method according to item i 28 of the patent application scope, wherein step (c) includes : @ _ Stomach ~ the surface and the second surface, and most of the crystal grains are mounted to the second surface with the pad facing up. 1 3 0 • If the method of the scope of patent application No. 1 24, the first surface is a scribe line Crystal_, wherein step (a) includes: β β stomach = the surface is immediately adjacent to the scribe wafer, and it is installed with most of the crystal grains. 1 3 1 · The method of item 24 of the patent application, wherein the first surface is -106 -(25) (25) 200412217 is a support surface, wherein step (a) includes: positioning the second surface next to the support surface, which is installed with most of the crystal grains. 132. For example, the method of the 124th scope of the patent application, wherein The two surfaces are an intermediate surface, wherein step (a) includes: locating the intermediate surface next to the support surface, which is installed with most crystal grains. 1 3 3 · The method according to item 1 24 of the scope of patent application, wherein the second surface is A substrate, wherein step (a) includes: positioning the substrate tightly Adjacent to the support surface, it is installed with a large number of dies. 1 3 4 · As in the method of claim No. 124, wherein the substrate includes most antenna substrates, wherein step (a) includes ... positioning the substrate next to the support surface, It is installed with a plurality of crystal grains, and each antenna substrate of the plurality of substrates is positioned next to a corresponding crystal grain of one of the plurality of crystal grains. 1 3 5 ·-A type for transferring the plurality of crystal grains from a first surface to a second surface. The system includes: a reducing mechanism 'for reducing a distance between the first surface and the second surface until a majority of crystal grains of the first surface contacts the second surface and is mounted to the second surface; and a removing mechanism' for The first surface and the second surface of the table are removed, and most of the dies remain mounted on the second surface. 1 3 6 · The system of item No. 135 in the scope of patent application, wherein the reducing mechanism is used to reduce the distance. And the removal mechanism used for removal is overlapped. 1 3 7 · If the system of the scope of patent application No. 135, the reduction mechanism used to reduce the distance and the removal mechanism used to remove -107-(26) (26) 200412217 1 38. The system according to item 135 of the scope of patent application, wherein the second surface is coated with an adhesive. The material is such that the adhesion of the second surface is greater than that of the first surface. 1 3 9 · For example, in the system of claim No. 135, the majority of the crystal grains on the first surface are oriented so that at least one contact pad surface of each of the crystal grains of the majority of the crystal grains faces the second surface, just before contacting the second surface. 1 40 · As in the system of item No. 139 of the scope of patent application, most of the dies are mounted on the second surface with the pad facing down. 1 4 1 · As in the system of claim No. 135, where the majority of the grains on the first surface are oriented so that at least one of the contact pads of each of the grains of the majority of the grains faces away from the second surface, it is in contact with the second surface. Before the surface. 1 42. The system according to item 141 of the patent application scope, wherein most of the dies are mounted on the second surface with the pad facing up. 1 4 3. The system according to item i 35 of the patent application scope, wherein the first surface is a scribe wafer. 1 44 · The system according to item i 35 of the patent application scope, wherein the first surface is a supporting surface. 145. The system according to item 135 of the patent application scope, wherein the second surface is an intermediate surface. 1 4 6 · The system according to item 5 of the patent application, wherein the second surface is a substrate. 147. The system of claim 146, wherein the substrate comprises a plurality of antenna substrates. 1 4 8 ·-A method for forming a die frame, including: -108- (27) (27) 200412217 (a) Mount a wafer containing most die to the surface of a band structure (b) to form a groove The trench grid is in the wafer to separate most of the grains on the surface of the strip structure; and (c) causes a portion of the strip structure accessible through the trench of the grid to harden to a rough structure; wherein the grid structure can be moved In addition to holding a large number of grains, one or more of the majority grains can be moved from the grid structure to a target surface. 149. The method of claim 148, wherein the tape structure includes a material that hardens when exposed to light, and step (c) includes exposing the tape structure with light through a trench in the gate. 1 50. The method of claim No. 149, wherein the belt structure includes a material that hardens when exposed to ultraviolet (UV) light, wherein the exposing step includes: using ultraviolet light that passes through the trench of the grid Exposed belt structure. 1 5 1 · The method of claim 148 in the scope of patent application, wherein step (c) comprises: applying a material to the belt structure through the grooves of the gate, wherein the material causes the belt structure to harden. 1 5 2 The method of claim 151 in the scope of patent application, wherein the coating step comprises: spraying the material onto the belt structure through the grooves of the grid. 1 5 3 · The method according to item 4 of the scope of patent application], wherein steps (b) -109- (28) (28) 200412217 include '· for scribe the wafer on the surface with the structure. 1 5 4 · The method according to item 149 of the scope of patent application, further comprising: (d) forming a belt structure to include a material layer. 1 5 5 · The method according to item 5 of the patent application scope, wherein the material is a photoresist material, wherein step (d) includes: (d) forming a belt structure to include a layer of the photoresist material. 15 6.—A grain frame formed according to the method in the scope of patent application No. 148. 1 5 7 · A system for forming a die frame, including: a wafer preparation module that supplies a wafer to a surface of a belt structure, and forms a trench grid in the wafer to separate the belt structure A majority of grains on the surface; and a source of hardener that causes a portion of a band structure accessible through a trench of the gate to harden to a grid-like structure; wherein the grid-like structure removably holds the majority of the grains, wherein One or more of the majority of the grains can be moved from the grid structure to a target surface. 1 5 8 · The system according to item i 5 7 of the scope of patent application, wherein the belt structure includes a material that will harden when exposed to light, and the source of hardener includes a light source, which exposes the light through the grooves of the grid. structure. 1 59. The system of claim 158, wherein the belt structure comprises a material that will harden when exposed to ultraviolet (UV) light, wherein the hardener source is exposed to the ultraviolet light through the grooves of the grid. structure. 1 60. The system according to item i 58 of the scope of patent application, wherein the belt structure package -110- (29) (29) 200412217 includes a material layer. 161. The system of claim 160, wherein the material is a photoresist material. 162. The system of claim 157, wherein the source of hardener passes through the groove of the grid to supply a material to the belt structure, and the groove of the grid causes the belt structure to harden. 163. The system according to item 162 of the patent application scope, wherein the hardener source is sprayed onto the belt structure through the groove of the grid. 1 64. A method for forming a die frame, comprising: (a) mounting a wafer containing a large number of dies to the surface of a tape structure, wherein the tape structure includes an encapsulated hardened material; (b) forming The trench grid is in the wafer to separate most of the grains on the surface of the band structure, wherein the forming step includes a step of destroying the surface of the band structure in the trench, so that the encapsulated hardening material is hardened into the grid in the trench. The hardened material is shaped like a groove in the gate. 1 65. The method of claim 164, further comprising: (c) removing the band structure so that its grid-like hardened material removably holds the majority of the crystal grains. 1 6 · The method according to item 164 of the patent application scope, further comprising: (c) before step (a), holding the belt structure with a supporting surface. 1 67. The method of claim 164, wherein step (b) comprises: using a laser to form a trench grid and destroying the surface of the belt structure so that the encapsulated hardened material is relaxed in the trench. -111- (30) (30) 200412217 1 6 8 · The method according to item 164 of the patent application scope, wherein step (b) includes: using I to form a trench grid and destroy the surface of the band structure so that The encapsulated hardened material relaxes in the groove. 169 · —A grain frame formed according to the method of the patent application No. 64. 17 0 · —A system for forming a die frame, including: a wafer preparation module that supplies a wafer to a surface of a tape structure, and forms a trench grid in the wafer to separate the tape structure Most of the grains on the surface, where the belt structure includes an encapsulated hardened material, wherein the wafer preparation module destroys the surface of the belt structure in the groove when the groove is formed, so that the encapsulated hardened material is in the groove. The medium-hardened grid-like hardened material is in the trench of the grid. 1 71 · The system according to item 170 of the scope of patent application, further comprising: a belt removing device which removes the belt structure so that its grid-shaped hardened material removably holds most of the crystal grains. 17 2. The system of claim 170, wherein the wafer preparation module includes a laser to form a grid of trenches and cause the encapsulated hardened material to relax in the trenches. 173. The system of claim 170, wherein the wafer preparation module includes a saw to form a grid of grooves and cause the encapsulated hardened material to relax in the grooves. 174. — A method for assembling most radio frequency identification (RFID) tags, including ... (a) Positioning a die frame next to the surface of a substrate so that it can be moved -112- (31) (31) 200412217 A grain of the majority of the grains held in the grain frame is immediately adjacent to the substrate; and (b) the grains are transferred from the grain frame to the immediate substrate. -175. The method according to item 174 of the scope of patent application, further comprising: (c) positioning the crystal grain frame next to the surface of another substrate so as to removably retain the majority of the crystal grains in the crystal grain frame The other crystal grain of X is immediately adjacent to the other substrate; and (d) transferring the other crystal grain from the grain frame to the immediately adjacent another substrate. 176. The method according to item 175 of the scope of patent application, further comprising: (e) repeating steps (c) and (d) until all crystals of a majority of crystal grains removably held in the crystal grain frame The granules have been transferred to a corresponding substrate. 177. The method of claim 174, wherein step (b) includes: punching a die from a die frame onto an adjacent substrate. 178. The method of claim 1.74, wherein step (b) comprises: supplying a gas pressure to move the die from the die frame to the immediate substrate. -113-