TW200407951A - Thin film transistor panel for transflective liquid crystal display and manufacturing method thereof - Google Patents

Abstract

A kind of thin film transistor (TFT) panel for transflective liquid crystal display (LCD) is disclosed in the present invention. The invention is featured with having an etching block pattern that contains the first part right facing the channel region of TFT and the second part right facing the electrode of the first capacitor. The second part of the etching block pattern has a wavy surface, so that the electrode of the second capacitor has a wavy surface for reflecting environment light. In addition, the invention also provides a manufacturing method of TFT panel.

Description

200407951 V. Description of the Invention (1) [Field of the Invention] The present invention relates to a thin film transistor (TFT) panel and a method for manufacturing the same, and particularly relates to a transflective panel for transflective use. Thin film transistor panel of liquid crystal display and manufacturing method thereof. [Prior art] Liquid crystal displays can be classified according to their illumination light sources. A reflective liquid crystal display illuminates the display with an external light source (ambient light) coming in from its front side (near the observer side). A reflective surface (such as an aluminum or silver reflector) is generally provided in or on the back of the reflective display device, which reflects light to illuminate the reflective display device. Although reflective displays meet the demand for low power consumption, their images are often dark and difficult to view. In addition, there are many times when the external light source is not enough, so pure reflective displays have many limitations in use. When the intensity of the external light source is not sufficient to view the image, an auxiliary light source (such as a backlight module) is often used to light the display. Although it does n’t matter how the light source of the world is, the auxiliary light source can illuminate the display crying, but its power consumption is reported to be large,-generally ... The battery of the portable computer is continuously used for backlighting: the original 2 to 4 tenders need to be charged. And when the external environment light source is too strong (for example, outdoors, it will make the transmlssive image lit by the backlight alone difficult to distinguish because of insufficient contrast :: overcome the front? Reflective display and wear Disadvantages of the transmissive i indicator, some electronic displays have been designed so that when Φ ^ α + y Narita's external light source is sufficient, the moon first source is not used, and the source is activated only when the external light source is insufficient.

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A design with dual functions of reflection and penetration is called "(transf iective)". Semi-transparent $ jji & semi-transparent and semi-reflective operation, while using the built-in backlight in transmissive mode, ", currently the main method of manufacturing liquid crystal display devices and panels, based on thin film transistor technology As you are familiar with this technology, you know: = T display devices generally include a thin-film transistor panel, a: / / and-a liquid crystal layer sandwiched between them. The conventional manufacturing of light-sensitive panels will firstly have a film process and A method for depositing a capacitor on a surface by a sequential deposition process for a thin transmissive transmissive liquid crystal display panel of a transflective liquid crystal display is described below in FIGS. 1 to 7. Referring to FIG. 1, a first metal layer Sputtered on a transparent glass substrate 100: a predetermined thickness, and the first metal layer is formed by the first micro-etching to form a gate electrode 110, a gate line (not shown), and an electrode 120 on the substrate 〇〇〇。 Refer to Figure 2, an insulating layer 130 has a gate electrode 110, a gate line and a capacitor electrode 120 on the substrate. Then 'an amorphous silicon layer 140 and a resist layer etched on one side ^ _ On the insulating layer 1 3 0, and The etch stop layer uses a second micro-etch to form an etch stop 150 facing a channel region (channel r eg i ON). An impurity-doped amorphous silicon layer (such as an n + doped amorphous stone layer) and A second metal layer is sequentially deposited on the entire surface of the substrate. The amorphous silicon layer 1 40, an n + doped amorphous stone layer, and a second metal layer are etched using a third lithography process, as shown in FIG. 3 , The amorphous silicon pattern i4〇a, the n + doped amorphous stone pattern 160 and the metal pattern include a data line (not shown in the figure), and a source 1 7 0 a separated by a channel 1 65 And pole 1 7 0 b and electricity

200407951 V. Description of the invention (3) Capacitive electrode 17 0 c. A protective layer 180 is then formed on the entire surface of the structure shown in Fig. 3 until it has a predetermined thickness. A fourth lithography process is used to pattern the protection j to expose portions of the drain electrode 170b and the capacitor electrode 17oc (see FIG. 4). Then, an indium tin oxide layer (ITO layer) 19 of a transparent conductive layer was formed on the entire surface with a protective layer pattern, and the layer 0 was patterned using a fifth lithography process (see FIG. 5). An organic layer such as a positive photoresist layer 192 is formed on the structure shown in FIG. 6 :: Γ to have a predetermined thickness. -Sixth lithography R FI, patterning the first layer 192 and making it have a wavy sheet ® (see, the entire surface is used as: reflective metal layer 194 in the structure shown in Figure 6) The seven lithography process strips the reflective metal layer 194 (芩 see Figure 7). U: The former ic 'is formed by the power film film crystal # 面 s ^ f gown, the process is complicated and Increase the manufacturing time. Therefore, its yield is low and the manufacturing cost is high. Basin ΐ ::: 3 This provides an improved method for manufacturing a thin film liquid crystal panel "= to overcome or at least improve the problems of the foregoing prior art. [Summary of the Invention] Device ί -A method for simplifying the semi-transparent and semi-reflective liquid crystal display and increasing the production = manufacturing method, which can be used for reducing the mask process and other purposes. The third thin film transistor panel of the display is characterized by having-200407951 V. Description of the Invention (4), the etching stop pattern includes a first portion facing a channel region of a thin film transistor and a second portion facing A first capacitor electrode, the etch stop pattern A second portion having a wavy upper surface such that the second capacitor electrode a reflective surface configured as a wavy surface provided thereon.

The present invention further provides a method for manufacturing the thin film transistor panel, which mainly includes the following steps: First, a gate electrode and a first capacitor electrode are formed on an insulating substrate (for example, a transparent glass substrate). After that, a gate insulation layer is deposited to cover the gate line. On the gate insulating layer, a semiconductor layer (such as an amorphous layer) and a etch stop layer (such as a nitride layer) are deposited, and the etch stop layer is patterned to form the etch stop pattern. Then, an ohmic contact layer and a conductive layer are continuously formed to cover the semiconductor layer and the etch stop pattern, and the semiconductor layer, the ohmic contact layer, and the conductive layer are patterned to form a semiconductor pattern, an ohmic contact pattern, and a conductive pattern. . The conductive pattern includes a source electrode and a drain electrode separated by the channel, and a second capacitor electrode formed directly above the wavy surface of the second portion of the etch stop pattern so that the surface of the second capacitor electrode is wavy. Finally, a protective layer pattern and a transparent conductive pattern are formed on the electrical pattern to form a transparent pixel electrode.

In the thin film transistor panel manufactured according to the above method, the second capacitor electrode system and the first capacitor electrode form a storage capacitor unit. In addition, the second capacitor electrode is barely exposed on the transparent conductive pattern as a reflective surface. Therefore, the liquid crystal display made of the thin film transistor panel of the present invention has a design with dual functions of reflection and transmission. It is worth noting that the present invention is the second of the reflective electrode. The design of the capacitor electrode is similar to the source / impulse m 1.

II m page 8 2004007951 V. Description of the invention (5) · Formed in the same lithography process; in addition, the wavy surface of the second capacitor electrode is formed by etching the wavy surface of the second part of the pattern, and the The second portion having a wavy surface is formed in the same lithography process as the first portion in the TFT channel region. Therefore, the method for manufacturing a thin film transistor panel according to the present invention can be completed with only five photomask processes, thereby simplifying the process and improving yield. Other objects, advantages, and novel features of the present invention will be made clearer from the following detailed description associated with the drawings: [Explanation of the Invention]

Although the present invention may be embodied in different forms of embodiments, those shown in the accompanying drawings and those described below are preferred embodiments of the present invention. Please understand that those disclosed herein are examples of the present invention. And is not intended to limit the invention to the specific embodiments illustrated and / or described.

A method for manufacturing a thin film transistor panel according to an embodiment of the present invention will be described below with reference to FIGS. 8 to 13. First, a metal layer is sputtered on a transparent substrate 200 (such as a transparent glass substrate) until it has a predetermined thickness, and then the first metal layer is patterned with the gate electrode 210 and the capacitor using a first lithography process pattern. The electrode 22 0 is on the substrate 2000 (see FIG. 8). Although not shown in the figure, when the gate electrode 21 0 and the capacitor electrode 220 are formed, a gate line connected to the gate electrode is also formed at the same time. Referring to FIG. 9, an insulating layer (such as a silicon nitride (SiNx) layer) is deposited on the entire surface of the structure shown in FIG. 8 to form a gate insulating layer 230. Then, a semiconductor layer such as an amorphous stone layer 2 40 and a 1 etch-resistant layer 2 50 (such as a silicon nitride (Si Nx) layer) are sequentially deposited on the gate insulating layer 2 3 0

Page 9200407951 V. Description of the invention (above, and the money engraved barrier layer 2 50 is etched using a second lithographic process to form an I-etched barrier pattern (see Figure 10), which includes a first A part 2 5 0 a is opposite to a channel region (channe 1 regi ο η) of a thin film transistor structure and a second part 2 5 0 b is opposite to the capacitor electrode 2 2 0, wherein the second part 250 b has a COrrUgated surface. The photoresist pattern can be patterned with the photoresist pattern 2 5 4 as shown in FIG. 9. The photoresist pattern 2 5 0 is used here. The photoresist pattern 2 5 used here Series 4 includes a first portion 254a facing the channel region, a second portion 2 54b with a wavy surface facing the capacitor electrode 2 2 0, and a third portion having substantially no photoresistance. In detail, In the second lithography process, the photoresist pattern 2 5 4 is used as the mask to mask the etch stop layer 2 5 0 and the amorphous silicon exposed under the third part of the photoresist pattern 2 5 4 is exposed. Layer 2 4 0. According to an embodiment of the present invention, the photoresist pattern 2 54 is obtained through the following steps. First, referring to FIG. 9, a photoresist layer 2 5 2 is formed on the last engraved resist layer 2 50. Then, a photomask 256 having a preset pattern is placed over the photoresist layer 25 2. The photomask 2 5 6 has a plurality of slits 2 5 6 a (only two slits are shown in FIG. 9) 'and the photoresist layer 2 5 2 is exposed to the light source. Finally, the photoresist layer 2 5 is exposed. 2 develop to obtain a photoresist pattern 2 5 4, wherein the photoresist pattern 2 5 4 second portion 254b has at least one recessed portion corresponding to the narrow portion 2 56a of the photomask 256. In addition, the second portion 25 of the engraved resist pattern The wavy surface of b can also be formed by a half-exposure step. The etched wavy surface of the second part 2 5 0 b can effectively improve the reflection efficiency of the reflective electrode to be formed thereon. Next, one ohm Contact layer (ohanc c〇ntact iayer), for example

200407951 V. Description of the invention (7) Impurity-doped layer (such as η + doped amorphous silicon layer) is sequentially deposited on the entire surface of the structure shown in FIG. 10 and a second metal layer is used to etch the amorphous silicon layer. 240, η + doped amorphous silicon is. Using the third lithography layer to form an amorphous silicon pattern 240a, n + doped amorphous element, and a second metal channel 2 6 5 separated by a source 270a / drain electrode 27〇b with an I pattern 2 6 0, be seen at first η). Although not shown in the figure, a data line connected to the capacitor electrode 27 ^ 'at the above step is also formed at the same time. ’、 中’ is in phase with the source. It is worth noting that the capacitor electrode 2 7 〇c system & RHh Xi, Shi and Bai are also electric ’, formed in the narrative block diagram: directly above the capacitor electrode _ & the surface of the capacitor is wavy. In the second stage, in the preparation process of Hongxi Xiyang Yang Anyan Red and Miyi U, the process of using the pre-α and pre-resistance patterns for etching was used to mask the non-negative η + # 杂The amorphous stone layer and the second metal are said to be 9 q π on the next day, and the mouth is exposed to the gate insulation 厣 230 without a moment, and a channel 265 is formed to separate the amorphous silicon under the middle channel 265. ; 俜 在 西 钟; 3 and the drain electrode 2 70 b, its y increase protection under the protection of δ xuan etching resistance figure stupid s but 8 2 5 0 a and remained substantially intact. ', 71 A protective layer 280 (for example, a fossil evening layer, not shown on all the surfaces of the above structure, until a pre-set) is shaped. The fourth lithography process patterns the protective layer to form a bare :: pole :: : Through hole 28 0a and one exposed capacitor electrode 2 ^ ”28〇b (see FIG. 12). Refer to No. 132J ° C, skin:] ^, Yihe, in the 12th figure + + 4 Shishi; 2 Formed on the surface—the indium tin oxide as a transparent conductive layer 29 °; the layer is jealous and used—the fifth lithography process is used to pattern τ. The layer, which forms a bright conductive pattern through the through hole 28. It is difficult to be electrically connected to the capacitor through the through hole. 200407951 V. Description of the invention (8) ~~~ — 一 — ______ As shown in the figure, the capacitor electrode 27〇c has a wavy surface, and is not mirror-reflective The reflectivity in the angular direction. It can be understood that the wavy surface of the bucket = 増 plus pole 2 7 0c is not limited to the surface shown in Figure 3 = a surface of the capacitor with concave or convex portions). * Gallery (ie In the thin-film transistor panel (referred to as above, the capacitor electrode 270c is The electrodes 2 and 20 are formed as a unit of a gambler, which is used after the thin film transistor (TFT) is turned off—in advance, the voltage stack of the pixel electrode formed by the transparent conductive layer is enclosed within " In addition, the capacitor electrode 2 70c is roughly exposed in #: buckle a specific pattern, and you can use it as a reflective surface. Therefore, using the thin film of the present invention = ㈣ 曰 日立 立 f ^ n in system Chengzhi LCD display, the transparent + ^ pixel electrode can allow the light generated by the backlight to penetrate in the penetrating state; while in reflective energy, the capacitor electrode 270c can reflect the incident light from an external light source. &Quot; It is worth noting that the capacitor electrode 2 7 0c of the present invention as a reflective electrode is formed in the same lithography system as the source electrode 2 7 0 a / not electrode 2 7 0 b: In addition, the far electric valley The wavy surface of the electrode 2 7 0 c is formed by using the worm-cutting pattern ^ ^ wavy surface of the second part 250b, and the second part 2 5 Ob having a wavy shape is connected to the first part in the TFT channel region. 25 〇a is formed in the same lithography process. Therefore, according to the present invention Mingzhi's thin-film transistor panel manufacturing method can be completed with only five photomask processes, thus simplifying the process and increasing yield. Although the present invention has been disclosed in the foregoing preferred embodiments, it is not intended to limit the present invention, any familiarity Those skilled in the art can make various changes and modifications without departing from the spirit and scope of the present invention. Therefore, the protection of the present invention

200407951 V. Description of Invention (9). The scope of protection shall be determined by the scope of the attached patent application.

Page 13 200407951 Brief description of the drawings' * [Illustration] Figures 1-7 are sectional views showing the manufacturing steps of a conventional thin-film transistor panel; and Figures 8-13: The cross-sectional view illustrates the manufacturing steps of a thin film transistor panel according to an embodiment of the present invention. [Illustration of drawing number]

100 Substrate 110 Gate electrode 120 Capacitance electrode 130 Insulating layer 140 Amorphous silicon layer 140a Amorphous silicon pattern 150 Etched 160 n + doped amorphous 165 Channel 170a Source 170b Drain 170c Capacitance electrode 180 Protective layer 190 Indium tin oxide layer 192 Positive photoresist layer 194 Reflective metal layer 200 Transparent substrate 210 Gate electrode 220 Capacitor electrode 230 Gate insulating layer 24 0 Amorphous silicon layer 240a Amorphous silicon pattern 250 1 Insect resist layer 2 50a First part 2 5 0 b Second Part 252 photoresist layer 254 photoresist pattern 2 54a first part 2 54b second part 256 photomask 2 5 6a slit 260 n + doped amorphous 265 channel 2 70a source page 14200407951

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Claims (1)

200407951 t. Scope of patent application-1. A method for manufacturing a thin-film transistor panel for a transflective liquid crystal display, which includes the following steps: forming a gate, forming a gate, forming a half, and forming a body layer, the ( channel electrode, wherein the surface); is continuously formed on the pattern to pattern the conductor pattern, and the second capacitor is electrically patterned to form a bare pattern on the etched second capacitor, and the exposed is formed through the second and passes through the second The capacitor is used as a counter electrode, and the insulating layer and the conductive layer are used to etch away the etching resistance region. The second one ohm and one conductive semiconductor are separated by one ohm. A surface and a first capacitor electrode on an insulating substrate; covering the gate electrode and the first capacitor electrode; covering the gate insulating layer; a pattern (etching stop pattern) including a first portion in the semi-conductive pattern Part facing a channel area) and a second part facing the first capacitor with a wavy surface (corrugated contact layer coverage) The layer covers the layer, the source of the ohmic contact pattern, and the second part of the surface is wavyly covered on the conductive to form a bare semiconductor layer and etch to block the ohmic contact layer; the contact layer and the conductive layer are formed Half of the conductive pattern is directly above the wavy surface of the two capacitor electrodes, making the conductive pattern drain and a first .. pattern; the first through hole of the drain electrode and the second through hole of the surface are wavy. The table pattern is electrically connected through the first through-hole electrical hole to the second capacitor system and is exposed to the transparent electrode; and connected to the drain electrode, wherein the bright conductive pattern is used for Page 16 200407951 VI. Applying for a patent scope, 2. The method for manufacturing a thin-film transmissive liquid crystal panel for a transflective liquid crystal display according to item 1 of the scope of patent application, wherein the step of forming the etching stop pattern includes: Forming an etch stop layer to cover the semiconductor layer; forming a photoresist pattern on the rice etch stop layer, the photoresist pattern including a first portion facing the channel region and a second portion having a wavy surface Facing the first capacitor electrode and a third portion substantially free of photoresist; and The photoresist pattern is used as a mask to etch the etch stop layer to form the etch stop pattern. 3. The method of manufacturing a thin-film transistor panel for a transflective and transflective liquid crystal display according to item 1 of the scope of the patent application, wherein the photoresist pattern forming step includes: forming a photoresist layer on the etching resist layer ; P placing a photomask with a preset pattern on the photoresist layer, the photomask having at least one slit, and exposing the photoresist layer to a light source; and developing the exposed photoresist layer to obtain the photoresist layer; Photoresist pattern. 4. The method for manufacturing a thin-film transistor panel for a transflective liquid crystal display device according to item 2 of the scope of the patent application, wherein the etching stop layer is a silicon nitride layer. Page 17, 2004007951 VI. Application scope of patents' 5, According to the method of manufacturing patents for the transmissive and transflective liquid crystal display of the thin film transistor panel according to item 2 of the patent scope, wherein the second part of the etching stop pattern has a concave Or the convex portion is provided on the wavy surface. 6. A thin-film transistor panel for a semi-transparent and semi-reflective liquid crystal display, comprising: an insulating substrate; a gate electrode and a first capacitor electrode provided on the insulating substrate; a gate insulating layer covering the gate An electrode and a first capacitor electrode; a semiconductor pattern provided on the gate insulating layer; an etch stop pattern provided on the semiconductor pattern, the etch stop pattern including a first portion facing a channel region and a second portion Facing the first capacitor electrode, wherein the second portion has a wavy surface; a conductive pattern includes a source electrode and an electrode separated by the channel, and a second capacitor electrode is formed on the second portion of the etch stop pattern The wavy surface is directly above the wavy surface of the second capacitor electrode; an ohmic contact pattern is provided between the conductive pattern and the semiconductor pattern 4; a protective layer covers the conductive pattern, and the protective layer has a A first via hole exposing the drain electrode and a second via hole exposing the wavy surface of the second capacitor electrode; and a transparent conductive pattern via A first through hole is electrically connected to the drain electrode and is electrically connected to the second capacitor electrode through the second through hole, wherein the wavy surface of the second capacitor electrode is substantially exposed on the transparent conductive pattern for a reflection. surface. 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