200404906 欢、發明說明： 【發明所屬之技術領域】 用 本發明係關於製造低反射率薄膜的方法及其11 於電漿顯示器和其它爭面顯示器的光學濾光片。 【先前技術】 一般說來，此類塑的薄膜大部分藉由濺鍍技術來势造 ’因為此技術提供在一個具有大表面面積的基板上均句形 成薄膜的良好控制的好處，特別是由其中使用具有大表面 面積基板的趨勢為顯著的平面顯示器的觀點來看（尤其見 下述專利文件1及2)。 低反射率薄膜傳統上係由結合二層或二層以上的由制 動濺鍵（reactive sputtering)所製備的層所形成，其係使 用氧氣、氮氣和/或碳以及一層反射層。 通常來說，區域地產生之高密度電漿以及於一標的物 上形成迴形磁場捕捉電子的技術（如磁子賤鍛方法），被 使用於改善沉積速率的薄膜形成裎序。然而，由於高密度 電漿藉由磁子濺鍍區域地被產生，濺鍍產生區域（腐餘） 同樣位於^的物上而經#地減少目標物的使用效率，因此 同時增加運作成本。 為了避免這個問題，一種揮動置於相對於後面的電極 的背面並且經常地移動濺鍍產生區域於標的物上的技術已 經被提出。然而，使用此技術，需要使用一個具有大寬度 的標的物。因此，產生高成本的問題，特別是在目標物材 料以及濺鍍系統項目上。 200404906 假如磁子磁流被做來揮動，因為減鑛產生區域在數目 上的差異消除經過的磁流’餐的延展在標的物的邊緣及 中央之間不同。然後，標的物—步步地損壞，也引起標的 物使用的低效率。 為了試圖解決上述特定的問題，本發明的發明人在日 本專利第2002-37825號中提出μ由辦^ 死日由增加置於電極背後的磁 子石♦數目來形絲成本伴隨著賴層次生產力的薄膜。 更特別的是，二個磁子磁流被置於在一個被提出的裝置表 現出相同電位以產生二個封閉迴路電漿的電極的背後。然 後，置於電極背後的磁子磁流被製造來揮動相對於電極的 背後，以致於接著藉由產生磁子電漿得到的電漿移動到標 的物的表面。 y 「專利文件1」 曰本專利laid-open公告第1〇-140345號 「專利文件2」 曰文專利laid-open公告第07-310181號 當藉由濺鍍形成薄膜時，藉由制動濺鍍形成的層的速 率以及層的光學常數根據氧氣的流動速率、氮氣的流動速 平以及一氧化碳的流動速率而大量地變動。根據這個已提 出的方法’當這個速率和光學常數藉由制動濺鍍快速地變 動’磁子磁流的揮動速率必須精確地被決定，因為磁子磁 流的揮動方向與傳送基板的方向互相相反。 【發明内容】 因此’本發明的主要目的係在於提供一種製造低反射 9 200404906 率薄獏的方法及裝置，使得上述的問題得以解決。 在本發明的第一特點中，上述的目的係藉由在基板上 =低反射率薄膜之方法，該方法藉由__種標的物材 枓，續地在置於相反於及相對於置於—個濺鑛容室中的一 個電極的基板上以形成低反射率薄膜，包括步驟為： 產生封閉迴路磁子電漿於置於表示相同電位的電極上 的標的物的表面，其分別藉由置於陰極背後的二個磁子磁 電流產生，以及200404906 Description of the invention: [Technical field to which the invention belongs] The present invention relates to a method for manufacturing a low reflectance film and an optical filter used in a plasma display and other surface display. [Previous technology] Generally speaking, most of these plastic films are fabricated by sputtering technology because this technology provides the benefits of well-controlled film formation on a substrate with a large surface area, especially by From the standpoint of a flat display in which a substrate having a large surface area is used (see especially Patent Documents 1 and 2 below). Low-reflectivity thin films have traditionally been formed by combining two or more layers made by reactive sputtering, using oxygen, nitrogen, and / or carbon and a reflective layer. Generally speaking, the high-density plasma generated regionally and the technology to form a magnetic field on a target to capture electrons (such as the magneton forging method) are used to improve the film formation sequence of the deposition rate. However, since the high-density plasma is generated by the magnetron sputtering area, the sputtering generation area (corrosion) is also located on the substrate, which reduces the use efficiency of the target, thereby increasing the operating cost. To avoid this problem, a technique of swinging the back side of the electrode opposite to the back and frequently moving the sputtering generation area on the target has been proposed. However, using this technique requires the use of an object with a large width. As a result, high cost issues arise, especially on target materials and sputtering system projects. 200404906 Suppose that the magnetic current of the magneton is made to oscillate, because the difference in the number of mined areas is eliminated, and the passing magnetic current is eliminated. The extension of the meal is different between the edge and center of the object. Then, the target is damaged step by step, which also causes the inefficient use of the target. In order to try to solve the above-mentioned specific problems, the inventor of the present invention proposed in Japanese Patent No. 2002-37825 that μ is to be dealt with ^ The day of the dead is increased by increasing the number of magnets placed behind the electrode. The cost of the wire is accompanied by the hierarchical productivity Thin film. More specifically, two magneton magnetic currents are placed behind an electrode in a proposed device that exhibits the same potential to generate two closed loop plasmas. Then, the magneton magnetic current placed behind the electrode is made to swing relative to the back of the electrode so that the plasma obtained by generating the magneton plasma then moves to the surface of the target. y "Patent Document 1" Japanese Patent Laid-Open Publication No. 10-140345 "Patent Document 2" Japanese Patent Laid-Open Publication No. 07-310181 When forming a thin film by sputtering, brake sputtering is applied The rate of the formed layer and the optical constant of the layer vary greatly depending on the flow rate of oxygen, the flow rate of nitrogen, and the flow rate of carbon monoxide. According to this proposed method 'when this rate and optical constants are rapidly changed by brake sputtering', the swing rate of the magnetic flux must be accurately determined because the swing direction of the magnetic flux and the direction of the transfer substrate are opposite to each other . [Summary of the Invention] Therefore, the main purpose of the present invention is to provide a method and a device for manufacturing a low reflection 9 200404906 thin film, so that the above problems can be solved. In the first feature of the present invention, the above-mentioned object is a method of forming a low-reflection film on a substrate by using a target material 标, and continuously placing the opposite and opposite -Forming a low reflectivity film on the substrate of one electrode in a splash chamber, comprising the steps of: generating a closed loop magneton plasma on the surface of a target placed on an electrode representing the same potential, respectively by Two magneton magnetic currents placed behind the cathode, and
▲揮動表示相同電位並且置於陰極背後的磁子磁流於不 向於相對於基板移動速度的1/50，藉以移動得到的電漿導 致沿著標的物的表面的磁子電漿產生。 根據本發明中的方法’氣體包含氧氣 種或多種作為制動氣體。 置於陰極表面之標的物材料，可由絡、_、鐵、_ —個包含上列一個或一個以上元素的合金所製得。 氮氣和碳的一▲ Swings indicate that the magnetron magnetic current at the same potential and placed behind the cathode is not 1/50 of the moving speed relative to the substrate. The resulting plasma will move along the surface of the target to generate a magnetron plasma. The method'gas according to the present invention contains oxygen or more as the brake gas. The target material placed on the surface of the cathode can be made from alloys containing one or more of the elements listed above. Nitrogen and carbon
本一:ΐ點，係提供—種在基板上形成低 射率薄嫉之衣置’ un*崎_種 在置於相反於及相對於置於—如麵容 個= 基板上以形成低反射率薄膜，其包括： 陰極The first one: the point, is to provide-a kind of low-emissivity clothing on the substrate 'un * ___ placed on the opposite and relative to-such as face = a substrate to form a low reflection Rate thin film including: cathode
〆個磁子磁流，其置於V i — V 认并工十赌表相同電位的陰極的背後 以產生分別的磁子電漿封閉迴路； K位日7月傻 磁流揮動裝置，用於分別地揮 面的滋子磁流’藉以移動得到的電極的背後 的磁子電漿產生；以及 L導致沿著標的物表 10 200404906 一個控制裝置，用於控制相對於基板移動速度的磁子 磁流揮動速度。 根據本發明的方法，二個磁子電漿的封閉迴路，藉由 置於陰極背後的二個磁子磁流產生於置於表示相同電位的 陰極的表面的標的物表面，且產生的磁子電漿藉由揮動置 於陰極背後的磁子磁流沿著標的物表面，以不高於相對於 基板移動速率的1/50的速度移動。因此，使用標的物的效 率能夠顯著地被改善以減少薄膜形成成本。此外，低反射 率薄膜能夠一致地形成於基板上。 ' 根據本發明的裝置’其包括二個磁子磁流，其置於 示相同電位的陰極的背後’以產生分別的磁子封閉 路；磁流揮動裝置’其係用於分別地揮動相對於陰 ==:===，表 於基板移動速度的磁子磁流揮動速度。因此二 致於可以顯著地改善標的物的使用效率。,果， 目、電源的數目以及幫浦的數目可_ π極的數 地減少裝置的成本以及全段的長度。初地^ ’以一致 【實施方式] 反射率薄祺的方法及根據本發明的製造低 。 ’置的個車父佳實施例的附加的圖示 意圖 不的裝置包含一個送進 11 200404906 /送出容室1並且 一個濺鍍容室2，其藉由—A magnetic current, which is placed behind the cathodes of the same potential of the V i-V counters to produce separate closed loops of magnetic plasma; K-bit July July silly magnetic current swinging device for The magnetoplasmon behind the electrodes obtained by moving the zizu magnetic currents separately is generated; and L causes a control device along the subject table 10 200404906 to control the magnetomagnetic currents moving relative to the substrate. Swing speed. According to the method of the present invention, the closed loop of two magneton plasmas is generated on the surface of the target placed on the surface of the cathode showing the same potential by the two magneton magnetic currents placed behind the cathode, and the generated magnetons The plasma moves along the surface of the object by waving the magnetic current behind the cathode at a speed not higher than 1/50 of the speed of the substrate. Therefore, the efficiency of using the target can be significantly improved to reduce the cost of film formation. In addition, a low-reflection film can be uniformly formed on a substrate. 'A device according to the invention' which comprises two magneton magnetic currents, which are placed behind a cathode showing the same potential, 'to produce separate magneton-closed circuits; a magnetic current swinging device' which is used to separately swing relative to Yin ==: ===, the speed of the magnetic current swing of the magneton expressed in the moving speed of the substrate. Therefore, the use efficiency of the target can be significantly improved. As a result, the number of meshes, the number of power sources, and the number of pumps can reduce the number of devices and the length of the entire segment. Initially ^ 'consistent [Embodiment] The method of thin reflectance and low manufacturing according to the present invention. An additional illustration of a car driver embodiment is intended. The device does not include a feed-in 11 200404906 / send-out container 1 and a sputtering container 2 by-
它們可以被製造為藉由磁流揮動驅動單元15同時地揮動。鲁 陰極11連接於一個直流電源16，使得高密度電漿17由 直流電源16與-個RF電源（圖未示）送入電力以沿著在標 的物材料12上的迴路磁場產生，並且標的物材料12被濺鍍 於減鍍的中心及周圍，其為電漿產生的區域。 基板基座18同時置於濺鍍容室2中，以及基板19置於基板基 座18上。基板基座18以一個傳輸機制（圖未示）支撐以致 於移動在送進/送出容室丨與濺鍍容室2之間。基板基座18藉 由置於濺鍍容室2右端的包覆型加熱器2〇加熱。 · 控制單元21被用於決定磁子磁流13的揮動速度，其連 接於磁流揮動驅動單元15以驅動磁子磁流13的揮動機制14 。控制單元21操作限制置於陰極背後的磁子磁流的揮動速 度Μ以一個不大於相對於基板19移動速度3的1/5〇。揮動機 制14瓖磁流以相對於基板基座μ經過的方向以正或負的方 向揮動。 圖式的I置以下列方式操作。在藉由經由閥4的真空/ 12 ^00404906 ==1 送進/送出容室1於想要的程度，置於基板基 先夢由猎由分隔閥3帶進賤鑛容室2。賤鍍容室2首 真空/抽氣幫浦7淨空到高度真空度，並且 統8‘二:糟具有分開的重量流控制器的氬氣送入系 制動氣體送人系統㈣蚊的速率送人。在另外一方 ’虽電力由直流電源16與卯電源提供到陰極11，高宓产 =著標的物材料12上的迴路磁場形成^They can be manufactured to be swung at the same time by swiping the drive unit 15 by magnetic current. The cathode 11 is connected to a DC power source 16 so that the high-density plasma 17 is fed with power from the DC power source 16 and an RF power source (not shown) to be generated along the loop magnetic field on the subject material 12 and The material 12 is sputtered on the center and periphery of the reduced plating, which is the area generated by the plasma. The substrate base 18 is placed in the sputtering chamber 2 at the same time, and the substrate 19 is placed on the substrate base 18 at the same time. The substrate base 18 is supported by a transport mechanism (not shown) so as to move between the feed-in / feed-out chamber 丨 and the sputtering chamber 2. The substrate base 18 is heated by a cladding heater 20 placed at the right end of the sputtering chamber 2. The control unit 21 is used to determine the swing speed of the magnetic flux 13 and is connected to the magnetic flux driving unit 15 to drive the swing mechanism 14 of the magnetic flux 13. The control unit 21 operates to limit the swing speed M of the magneton magnetic current placed behind the cathode at a speed not larger than 1/5 of the moving speed 3 with respect to the substrate 19. The oscillating motor 14A magnetic current oscillates in a positive or negative direction with respect to the direction in which the substrate base µ passes. The design of the schema operates in the following manner. After the vacuum / 12 ^ 00404906 == 1 through the valve 4 is sent into / out of the chamber 1 to the desired level, it is placed on the substrate base, and the dream is brought into the basement chamber 2 by the partition valve 3. Base plating container 2 vacuum / exhaust pumps 7 headroom to high vacuum, and system 8'2: Argon gas with separate weight flow controller is sent to the brake gas delivery system. . On the other side, although the electric power is supplied to the cathode 11 by the DC power source 16 and the tritium power source, the high magnetic field is generated by the loop magnetic field on the target material 12 ^
3錢於贿的中央及周圍，其為電漿產生的區域。在這 】Q^t *置於以包覆型加熱器2G加熱的基板基座18上的基板 ==標_材料12贱鍍的區域。結果，氧氣薄膜、 鼠耽薄膜與碳薄卿成於藉由雜的標的物材料置於基板 基座18的基板19±。在操仙間，基板19具有以包覆性加 熱器20控制的溫度。 實例 本叙明將會參考一個實例以被敘述。在表示的實施例 中，一個鉻標的物被用於如第i圖所示的裝置，並且氧氣 、二氧化碳、氮氣被用於制動氣體送入裝置9。同時，〇.7 帕的濺鍍壓力並且15kw的電力被使用。磁流揮動驅動單元 15藉由控制單元21控制以致於當基板基座18被做為經過鉻 標的物材料12表面時，磁子磁流13的揮動速度13為相對於 置於分開的基板基座18上的基板19的移動速度的1/50及 1/7。結果，一個45奈米反射濺鍍層與一個130奈米反射層 形成於每一基板上。第2A圖與第2B圖顯示實例中的基板19。 第2A圖顯示基板19中速度比率（基板19的移動速度S :磁子 磁流13的揮動速度M)為1 : 50，以及第2B圖顯示速度比率 13 200404906 為1 ·· 7。低反射率薄膜一致地形成於如a所示的第μ圖所示 的基板19，其中帶狀物產生於如b和c所示的第⑼圖中的基 板19。既然薄膜在磁流相對於基板移動速度8的揮動速度+M 與-Μ的情況下’由電漿來看基板的相對速度為s+m與s-M。 換句話說，帶狀物會產生，除非Μ夠大或夠小。藉由選擇一 個夠小的Μ值，可以較為簡單地消除帶狀物，因為硬體原因 ’ Μ具有一個上限。 第3圖顯示如第2Α圖的基板的反射特性示意圖。如第 3圖所示，波長最低反射值β以人Β表示。本發明的目的係在 於製造出的波長在550nm與600nm之間，其約在可見光波長 範圍的中心以涵蓋整個可視光範圍。 第4圖顯示沿著基板移動方向的反射率分布示意圖， 其藉由改變磁流的揮動速度Μ而得到。由第4圖來看，當速 度比率（其與磁流揮動速度以的互動數目相等）不小於5〇， 波長；U的寬度△ 為穩定以顯示反射率的一致分布。 【圖式簡單說明】 第1圖係為本發明用於形成低反射率薄膜裝置實施例的示 意圖； ，2 Α圖與第2Β圖係為使用第一圖的裝置形成二層低反射 薄膜於分別的基板上的平面示意圖； 第3圖係為第2 Α圖的基板的反射特性的圖表；以及 第4圖係為表不藉由改變磁流的揮動速度，沿著基板移動 方向反射率的分布圖。 14 200404906 【圖號簡單說明】 1 · · · • ••送進/送出容室 2 · · · •••濺鍍容室 3 · · · •··分割閥 4 · · · 5 ·… • · ·真空/消耗幫浦 6 · · · # · · ^ 7 · · · • · ·真空/消耗幫浦 8 · · · •••氬氣送入系統 9 · · · •••制動氣體送入裝置 10·· •••具有電性絕緣板 11·· • ••陰極 12·· •••標的物材料 13·· •••磁子磁流 14·· •••揮動機制 15·· •··磁流揮動驅動單元 16·· •••直流電源 17·· • ••高密度電漿 18·· •••基板基座 19·· • ••基板 2 0·· •••包覆型加熱器 2 1·· • · · ·控制單元3 The money is in the center and surrounding of the bribe, which is the area where the plasma is generated. Here] Q ^ t * The substrate placed on the substrate base 18 heated by the cladding heater 2G == standard_material 12 is a low-plated area. As a result, an oxygen film, a rattan film, and a carbon thin film were formed on the substrate 19 ± of the substrate base 18 with a miscellaneous target material. In operation, the substrate 19 has a temperature controlled by a cladding heater 20. Example This description will refer to an example to be described. In the illustrated embodiment, a chromium target is used for the device shown in Fig. I, and oxygen, carbon dioxide, and nitrogen are used for the brake gas feeding device 9. At the same time, a sputtering pressure of 0.7 Pa and 15 kw of power were used. The magnetic current swing driving unit 15 is controlled by the control unit 21 so that when the substrate base 18 is used to pass through the surface of the chrome target material 12, the swing speed 13 of the magnetic sub-magnetic current 13 is relative to that placed on a separate substrate base. The moving speed of the substrate 19 on 18 is 1/50 and 1/7. As a result, a 45 nm reflective sputtering layer and a 130 nm reflective layer were formed on each substrate. 2A and 2B show the substrate 19 in the example. FIG. 2A shows the speed ratio (moving speed S of the substrate 19: the swing speed M of the magnetic flux 13) of the substrate 19 is 1: 50, and FIG. 2B shows the speed ratio 13 200404906 of 1 ·· 7. The low-reflection film is uniformly formed on the substrate 19 shown in the? -Th picture shown in a, and the ribbon is generated on the substrate 19 shown in the? -Th picture shown in b and c. Since the film has a swing speed of the magnetic current relative to the substrate moving speed of 8 + M and -M ', the relative speed of the substrate from the plasma is s + m and s-M. In other words, ribbons will be produced unless M is large or small enough. By choosing a sufficiently small value of M, it is relatively simple to eliminate the banding, because for hardware reasons, the M has an upper limit. Fig. 3 is a schematic view showing the reflection characteristics of the substrate as shown in Fig. 2A. As shown in Fig. 3, the lowest reflection value β of the wavelength is represented by human B. The object of the present invention is to produce a wavelength between 550 nm and 600 nm, which is about the center of the visible light wavelength range to cover the entire visible light range. FIG. 4 shows a schematic diagram of the reflectance distribution along the substrate moving direction, which is obtained by changing the waving speed M of the magnetic current. Looking at Figure 4, when the speed ratio (which is equal to the number of interactions with the speed of the magnetic current swing) is not less than 50, the wavelength; the width of U is stable to show a uniform distribution of reflectance. [Brief description of the drawings] FIG. 1 is a schematic diagram of an embodiment of a device for forming a low-reflectivity thin film according to the present invention; FIG. 2A and FIG. 2B are two-layer low-reflective films formed using the device of the first figure Figure 3 is a schematic plan view of a substrate; Figure 3 is a graph of the reflection characteristics of the substrate of Figure 2 A; and Figure 4 is a graph showing the distribution of reflectance along the substrate moving direction by changing the velocity of the magnetic current swing Illustration. 14 200404906 [Simplified description of drawing number] 1 · · · • • • Feed in / out of the chamber 2 · · · · • • Sputtering chamber 3 · · · · · · Split valve 4 · · · 5 ··· · · · · · Vacuum / consumption pump 6 · · · # · · ^ 7 · · · · · · Vacuum / consumption pump 8 · · · · •• Argon gas feeding system 9 · · · • • • Brake gas feeding device 10 ·· ••• Electrical insulation plate 11 ·· •••• Cathode 12 · •••• Target material 13 · •••• Magnetic current 14 · ••• Swing mechanism 15 ·· • · · Magnetic current swing drive unit 16 ·· •• DC power supply 17 · •••• High density plasma 18 · •••• Substrate base 19 · •••• Substrate 2 0 ·· ••• Wrapped type Heater 2 1 ······ Control unit
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