200402325 (1) 玖、發明說明 【發明所屬之技術領域】 本發明係有關使用於化學工場等之化學反應過程，或 半導體製造過程等的氣體混合裝置、氣體反應裝置及實施 半導體晶圓或玻璃基板等之表面處理、或實施零件、工具 類的表面處理所使用之表面重整裝置者。 【先前技術】 當反應氣體於反應爐時，係以流量計或質量流等來流 規定量之氣體，而實施反應於反應爐內。 然而，所供應之大部分氣體因剛開始在反應爐內被加 熱，因而要達到反應溫度會需要長的時間。爲此，會在爐 內之氣體產生溫（度）差而無法令氣體整體成爲均勻的溫 度，以致難於生成均勻之反應物。 又在反應爐內予以反應複數的氣體時，倘若由複數氣 體所形成的混合氣體，未予以混合攪拌爲均勻且調整氣體 成爲均勻溫度時，也難於令反應物生成爲均勻。 當在反應爐內反應複數之氣體時，倘若複數的氣體未 調整爲各獨自之均勻溫度，就無法迅速地在反應內進行反 應。 反應爐係需要能耐高溫之材質且需要構成爲可放入被 處理大小的容量，爲此，被處理體爲很大時，也會使構成 反應爐之費用變爲大。 在於反應爐內要使處理氣體產生反應時，以加熱反應 -5-200402325 (1) Description of the invention [Technical field to which the invention belongs] The present invention relates to a gas mixing device, a gas reaction device, and a semiconductor wafer or glass substrate used in chemical reaction processes such as chemical plants or semiconductor manufacturing processes. Surface finishing equipment, such as surface finishing equipment used for surface treatment of parts and tools. [Prior art] When a reaction gas is in a reaction furnace, a predetermined amount of gas is flowed by a flow meter or mass flow, and the reaction is performed in the reaction furnace. However, since most of the supplied gas is initially heated in the reaction furnace, it takes a long time to reach the reaction temperature. For this reason, the temperature (degrees) difference of the gas in the furnace cannot be caused to make the entire gas a uniform temperature, so that it is difficult to generate a uniform reactant. When a plurality of gases are reacted in the reaction furnace, if the mixed gas formed by the plurality of gases is not mixed and stirred to be uniform and the gas is adjusted to a uniform temperature, it is difficult to make the reactants uniform. When a plurality of gases are reacted in a reaction furnace, if the plurality of gases are not adjusted to their respective uniform temperatures, the reaction cannot be performed quickly within the reaction. The reaction furnace system needs a material capable of withstanding high temperatures and a capacity capable of being placed in the size to be processed. For this reason, when the object to be processed is large, the cost of constructing the reaction furnace becomes large. When the process gas is to react in the reaction furnace, the reaction should be heated -5-
XO-jO (2) (2)200402325 室內的整體處理氣體來反應者爲多，因而’爲反應用之消 耗能量會變爲大。又由於處理氣體整體會產生溫差，以致 會產生溫度斑於被處理體，使得具有難於進行均勻之反應 處理的缺點。 而利用於表面處理被處理體之表面處理裝置等’係以 配設處理氣體的反應爐而由熱電解離、放電、照射雷射等 之方法來使處理氣體產生反應，以在反應爐內進行被處理 體的表面處理。 至於有關如此之表面重整（改進）裝置’所會利用於 被處理體的表面重整用爲多之去熱電解離、放電、雷射光 所進行的方法，因處理氣體之反應溫度爲尚溫度’以致消 耗能量大，使得被處理體也會限定於能耐於高溫的材料。 【發明內容】 用於解決上述課題用之本發明乃作成爲具備有：由朝 周（邊）方向連通的環狀流路，和形成於前述環狀流路而 在該環狀流路之流入口和流出口而朝周（邊）方向位移（ 偏差）的複數之流入口及流出口’及連通於形成在環狀流 路之前述流入口或前述流出口的複數連通流路所形成之混 合流路；及連通於該混合氣體的流體之供應流路及流出流 路的氣體混合裝置者。 氣體混合裝置也可構成爲具備有：由以複數並列狀態 所配置且朝周邊方向成連通之複數環狀流路’和形成於前 述環狀流路而在該環狀流路之流入口和流出口的位置朝周 -6 - (3) (3)200402325 邊方向位移的複數之流入口及流出口，及連通了形成於相 異環狀流路的前述流入口和前述流出口之複數連通流路所 形成的混合流路；及連通於該混合流路之流體的供應流路 及排出流路。 構成氣體反應裝置成爲具備有：朝周邊方向連通的環 狀流路，和形成於前述環狀流路成該環狀流路之流入口和 流出口而朝周邊方向位移的複數之流入口及流出口 ’及連 通於形成在環狀流路之前述流入口或前述流出口的複數連 通流路所形成之氣體反應流路；及連通於該氣體反應流路 的流體之供應流路及流出流路，即可。 也可構成氣體反應裝置成爲具備有：由以複數並列狀 態所配置且朝周邊方向成連通之複數環狀流路，和形成於 前述環狀流路而在該環狀流路之流入口和流出口的位置朝 周邊方向位移的複數之流入口及流出口，及連通了形成於 相異環狀流路的前述流入口和前述流出口之複數連通流路 所形成的氣體反應流路；及連通於該氣體反應流路之流體 的供應流路及排出流路。 於申請專利範圍所記載，流入口，流出口係意味各配 設於環狀流路，而會流入氣體於該環狀流路的口及從該環 狀流路流出氣體用之口。而在實施例，除了該意味之流入 口 3 1，流出口 32之外，也對於流入氣體於連通流路或從 連通流路流出氣體的口之連通流路的流入口 28，流出口 29之稱呼也會使用。 理想爲連接氣體供反應裝置於上述氣體混合裝置或氣 (4) (4)200402325 體反應裝置的供應流路，配設加熱混合流路或氣體反應流 路用之加熱手段，或配設槽於氣體之供應流路或排出流路 〇 理想爲連接流入複數之氣體而排出混合氣體用的真空 抽氣泵的氣體氣體排出口於氣體混合裝置之供應流路。 也可作成爲連接氣體反應爐於氣體混合裝置的氣體反 應裝置。 理想爲連接泵於連接在氣體混合裝置之氣體反應爐的 反應氣體排出口。 而流於氣體反應流路之氣體爲單一或複數的氣體，該 等氣體會在反應流路內產生反應。 也可作成爲連接氣體反應裝置之排出流路於儲集室的 表面重整裝置。 本發明之所謂會在氣體混合裝置、氣體反應裝置成爲 處理對象的氣體，並未限定於常溫下之氣體，也包括加熱 時會汽化的液化氣體者。 只要加熱混合裝置，就可加熱氣體成爲均勻溫度。 在於輸送複數之氣體於一混合裝置時，會在混合流路 內由高速之氣體的碰撞擾亂運動而使複數氣體攪拌成均勻 。再者，在通過混合流路時，由於會在複數處碰撞於壁面 ，以致更精緻地能均勻地攪拌複數的氣體來排出於排出流 路。 而在具備有真空抽氣器之結構時，將會予以混合所輸 入於真空抽氣器的複數氣體而放出混合氣體。 -8- IDDi (5) (5)200402325 連接泵於氣體反應爐之反應氣體排出口的結構時，可 由泵來令完成反應的反應氣體從反應爐從反應爐排出。 當要輸送同種類或複數之處理氣體至反應流路時，會 由在流路內的高速氣體之碰撞擾流運動，而使同種類或複 數的處理氣彼此互相產生很多次的碰撞。在氣體中，分子 或原子會以很快之速動流動，且互相重複地碰撞很多次而 成爲不規則地走動。因此，該時予以加熱流路時，也會加 熱處理氣體。 當提高加熱溫度時，處理氣體會成爲反應化。 即使增加流於流路內之處理氣體的量，因也會令流路 內的氣體流速成爲高速化，而增高對於壁面的碰撞次數， 以致會從壁面賦予多的熱，因此，甚至予以增加處理氣體 之量，也會在相同的流路能以良好的效率來實施加熱反應 〇 只要增加環狀流路之數量，就可增加處理氣體的碰撞 擾流運動之次數，使得可令處理氣體成高密度地反應化。 再者，在複數之處理氣體的反應時，由於能形成均勻 地混合攪拌複數之處理氣體，以致可產生混合成均勻狀態 的反應氣體。 該時，倘若加熱流路直至處理氣體之反應溫度時’就 可在處理氣體所具有的壓力下，予以製造大量之成均句溫 度，均勻混合的反應氣體。 加熱至反應溫度之反應氣體會由處理氣體所具有的壓 力而從排出流路流出。 (6) (6)200402325 依據構成爲如上述之本發明，在於會加熱混合裝置的 結構時，就可令氣體均勻地被加熱直至接近於反應爐內之 反應溫度爲止來供應。 再者，輸送複數之氣體於一混合流路內的結構時，可 由該結構而均勻地攪拌所要供應於反應爐內之複數的氣體 〇 依據構成爲如上述之本發明，只要成爲流路處理氣體 於加熱至反應溫度的氣體反應流路，就可製造具有均勻溫 度之反應氣體。 再者，當形成爲輸送複數的處理氣體於一氣體反應流 路內之結構時，就可製造成均勻混合的均勻溫度之反應氣 體。 【實施方式】 以下，將參照圖式之同時，說明有關本發明之實施形 態。在實施例，作爲處理氣體之氣體並不會要求氣體的種 類，但舉出一例子時，可使用空氣、N2 (氮氣）、〇2 (氧 氣、H2(氣氣）、Ar (氨氣）、He (氣氣）等之一'般氣體 ，H2〇（水）、C〇2 (碳酸氣）、CO (—氧化氮）、NH3 ( 氨）、CF4 (四氟化甲烷）、SF6 (六氟化硫）、CH4 (甲 院）、Si(C〇2H5) 4(四乙氧基砂院）等的液化氣體，及 任何一個之任意的混合氣體也可以。也可從上述以外之氣 體來自由地選擇符合於處理目的之處理氣體。 第1圖所記載之實施例係可供應複數之氣體於反應路 -10- (7) (7)200402325 者。 在本實施例係顯示使用氣體A、氣體B、氣體C的三 種類時之狀態。質量流3、混合裝置2、反應爐1係由配 管連接著。配管係以可耐高溫的金屬、陶瓷等所製造。 氣體A、氣體B、氣體C係由各個之質量流（質量流 量）3來實施流量調整，並由各自所具有的壓力來輸送於 各自之混合裝置2。 就可供應氣體A、氣體B、氣體C的任意氣體給予反 應爐。 而在混合裝置2乃配設有將詳述之如記載於第7圖至 第9圖的混合流路。 各氣體係由混合裝置2之供應流路22來進入於供應 側的槽26。而在槽26內產生碰撞之氣體係通過連接於槽 26的複數連通流路25之流入口 28而由該連通流路的流 出口 29從環狀流路24第1層之流入口 31進入於該環狀 流路24，且碰撞於環狀流路24壁面，又會使從不同流入 口 3 1所進入的氣體彼此產生碰撞。 同樣地，高速之氣體會從第1層的環狀流路24之流 出口 32，經過連接於該環狀流路24的複數之連通流路25 的流入口 28而通過該連通流路流出口 29進入於第2層之 環狀流路24的流入口 3 1來流入於該環狀流路24，並碰 撞於環狀流路24壁面之同時，會使從不同流入口進入之 氣體彼此產生碰撞。 而予以同樣地重複該狀態下，通過連接於最後環狀流 -11 - (8) (8)200402325 路24之連通流路25流入口 28而從該連通流路流出口 29 來進入於槽27。至於碰撞於槽27內面的氣體，將會從排 出流路23被排出。該時，倘若由電熱器4等來加熱設置 於容器6內之複數的混合裝置2時，混合流路21內之氣 體A、氣體B、氣體C，將由氣體的碰撞擾流運動而會加 熱爲均勻。以調整電熱器之溫度，就可加熱氣體A、氣體 B、氣體C的溫度成爲在於剛好反應爐之反應溫度的前面 。而混合裝置2及容器6係以能耐於電熱器4之高溫的金 屬、陶瓷所製造。 成均勻地加熱直至剛好在於反應溫度之前的氣體A、 氣體B、氣體C，將通過配管來輸送至設置於容器7內之 反應爐1。反應爐1及容器係以耐於高溫之反應溫度的金 屬、陶瓷所製造。至於進入於反應爐1的氣體A、氣體B 、氣體C會由反應爐內的電熱器5等更予以加熱，使得可 迅速地達到反應溫度。 也可替代電熱器4或電熱器5而使用由石油、天然瓦 斯等之燃燒器所產生的火力，或使用微波加熱、感應加熱 等。 而完成（終了）反應後的反應氣體，將由本身所具有 的壓力來放出於反應爐1外面。 第2圖所記載之實施例係在第1圖記載之實施例中， 予以連接真空泵8於反應爐1的氣體排出口者’除此之外 係與第1圖所記載之實施例爲同樣者。質量流3、混合裝 置2、反應爐1、真空抽氣器8係由配管所連接。而配管 200402325 Ο) 係由能耐於高溫的金屬、陶瓷所製造。 當質量流3和混合裝置2及反應爐1由真空泵（抽機 )8來進行真空吸取時，就可容易地令複數之氣體從質量 流3流給於混合裝置2、反應爐1。而反應完成後的反應 氣體，會由泵8來被吸引至反應爐外部。 第3圖所記載之實施例係可供應複數之氣體給予反應 路。在本實施例係顯示使用氣體A、氣體B、氣體C的三 種類之狀態者。 氣體A、氣體B、氣體C係各自之質量流3來調整流 量，且由各自之氣體本身所具有之壓力而在混合裝置2前 集中於一配管來輸送至混合裝置2。 由而，可供應氣體A、氣體B、氣體C中之任意氣體 給予反應爐。質量流3、混合裝置2、反應爐1、真空抽 氣器8係由配管所連接著。配管則由能耐於高溫之金屬、 陶瓷等所製造。 質量流3和混合裝置2及反應爐1當由真空泵8來實 施真空吸取時，就可容地令複數之氣體從質量流流給於混 合裝置2、反應爐1。 而混合裝置2乃配設有將後述之如記載於第7圖至第 9圖的混合流路。 複數之氣體A、氣體B、氣體C係由同一之混合裝置 2的供應流路22來進入於供應側的槽26。而由在槽26內 碰撞之氣體A、氣體B、氣體C所形成的混合氣體，將通 過連接於槽26之複數的連通流路25之流入口且由該連通 -13- (10) (10)200402325 流路之流出口 29從第1層的環狀流路24流入口 31進入 於該環狀流路24，並碰撞於環狀流路24壁面，又會令從 不同流入口 3 1所進入的混合氣體彼此產生碰撞。 同樣地，高速混合氣體會從第1層的環狀流路24之 流出口 32，經過連接於該環狀流路24的複數之連通流路 25流入口 28且通過該連通流路流出口 29而進入於第2層 的環狀流路2 4流入口 3 1來流入於該環狀流路2 4，以致 會碰撞於環狀流路24之壁面的同時，會使從不同流入口 所進入之混合氣體彼此產生碰撞。 而重複地進行上述情況，且通過連接於最後的環狀流 路24之複數連通流路25流入口 28，並從該連通流路流 出口 29進入於槽27。 至於碰撞於槽27內面的混合氣體，會由排出流路23 成均勻攪拌混合來被排出。 以電熱器4加熱設置於容器6內的混合裝置2時，混 合流路2 1內之混合氣體，可由氣體的碰撞擾流運動而加 熱成均勻。而以調整電熱器4之溫度，就可令混合氣體 加熱直至成爲剛好在於反應爐1的反應溫度之前的溫度。 混合裝置2及容器6係以能耐高溫之金屬、陶瓷等來製造 〇 混合攪拌成均勻且成均勻加熱到剛好在反應溫度之前 的混合氣體，將會通過配管來輸送至設置於容器7內之反 應爐1。反應爐1及容器7係由能耐於高溫之反應溫度的 金屬、陶瓷所製造。而進入於反應爐1之成均勻地加熱至 -14- (11) (11)200402325 剛好在於反應溫度之前的混合氣體，將由電熱器5進一步 予以加熱而可迅速地達到反應溫度。 亦可替代電熱器4或電熱器5來使用石油、天然瓦斯 等之燃燒器，或使用微波加熱、感應加熱。 而完結反應後的反應氣體，將會由真空泵（抽機）8 來吸引至反應爐1外面。 第4圖記載之實施例可供應複數之氣體至反應爐。在 圖上係顯示使用著氣體A、氣體B、氣體C之三種類的狀 態。 由質量流3實施流量調整的氣體A會進入於真空抽氣 器9。質量流3、真空抽氣器9、混合裝置2、反應爐1係 由配管所連接著。配管係以耐高溫之金屬、陶瓷等所製造 〇 將可供應與A —起連接於真空抽氣器9之真空管線的 氣體B，氣體中的任意氣體給予反應爐。氣體B、氣體C 可由氣體A流動時所會產生之吸引力而使氣體B、氣體C 成爲通過真空抽氣器9來流於混合裝置2。構成如此時， 即使不具有真空泵之狀況，也可令複數的氣體容易地成爲 流於同一混合裝置2。 由各質量流3實施流量調整的氣體A、氣體B、氣體 C可由真空抽氣器9所集中且從同一混合裝置之供應流路 22來流入於供應側的槽26。而在槽26內碰撞之混合氣體 ，將通過連接於槽26的複數連通流路25流入口 28且由 該連通流路流出口 29來從第1層之環狀流路24流入口 3 1 -15-XO-jO (2) (2) 200 402 325 There are many reactants in the overall processing gas in the room, so the energy consumption for reaction is large. In addition, because the processing gas as a whole produces a temperature difference, temperature spots are generated on the object to be processed, making it difficult to perform uniform reaction processing. The surface treatment device used for the surface treatment of the object to be treated is a reaction furnace equipped with a processing gas, and the process gas is reacted by thermal ionization, discharge, laser irradiation, etc., to be processed in the reaction furnace. Surface treatment of the treatment body. As for such a surface reforming (improved) device, the method used for the surface reformation of the object to be treated is to remove heat, ionize, discharge, and laser light. The reaction temperature of the processing gas is still high. As a result, the energy consumption is large, so that the object to be processed is also limited to materials that can withstand high temperatures. [Summary of the Invention] The present invention for solving the above-mentioned problems is provided with an annular flow path communicating in a circumferential (side) direction, and a flow in the annular flow path formed in the aforementioned annular flow path. A mixture of a plurality of inlets and outlets that are displaced (developed) in the circumferential direction (deviation) from the inlet and outlet, and a plurality of communicating channels that are connected to the inlet or outlet formed in the annular flow channel A flow path; and a gas mixing device for a supply flow path and an outflow flow path of a fluid connected to the mixed gas. The gas mixing device may be configured to include a plurality of annular flow paths' arranged in a plurality of parallel states and communicating in a peripheral direction, and an inflow port and a flow path formed in the annular flow path. The position of the outlet is toward the periphery -6-(3) (3) 200402325 A plurality of inlets and outlets that are displaced in the side direction, and a plurality of connected flows that connect the inlets and outlets formed in the different annular flow paths. A mixed flow path formed by the flow path; and a supply flow path and a discharge flow path of a fluid connected to the mixed flow path. The gas reaction device is configured to include a ring-shaped flow path communicating in a peripheral direction, and a plurality of flow inlets and flows formed in the ring-shaped flow path to form a flow inlet and an outlet of the ring-shaped flow path and to be displaced in a peripheral direction. An outlet 'and a gas reaction flow path formed by a plurality of communication flow paths communicating with the aforementioned inlet or the outlet formed in the annular flow path; and a supply flow path and an outflow flow path of a fluid connected to the gas reaction flow path . The gas reaction device may be configured to include a plurality of annular flow paths arranged in a plurality of parallel states and communicating in a peripheral direction, and an inlet and a flow path formed in the annular flow path in the annular flow path. A plurality of flow inlets and outlets whose positions of the outlets are displaced in the peripheral direction, and a gas reaction flow path formed by a plurality of communication flow paths formed between the flow inlets and the flow outlets formed in the different annular flow paths; and The supply flow path and the discharge flow path of the fluid in the gas reaction flow path. In the scope of the patent application, the inflow port and the outflow port mean that each is disposed in an annular flow path, and the port that flows into the annular flow path and the port that flows out of the gas from the annular flow path. In the embodiment, in addition to the meaning of the inflow port 31 and the outflow port 32, the inflow port 28 and the outflow port 29 of the communication flow path for the gas flowing into or out of the communication flow path Titles are also used. Ideally, a gas supply reaction device is connected to the above-mentioned gas mixing device or gas (4) (4) 200402325 body reaction device supply flow path, equipped with heating means for heating the mixing flow path or gas reaction flow path, or a tank in The gas supply flow path or exhaust flow path. Ideally, the gas outlet of the vacuum pump for exhausting the mixed gas flowing into the plural gas is discharged to the supply flow path of the gas mixing device. It can also be used as a gas reaction device that connects a gas reaction furnace to a gas mixing device. Ideally, the pump is connected to a reaction gas discharge port of a gas reaction furnace connected to a gas mixing device. The gas flowing in the gas reaction flow path is a single or a plurality of gases, and these gases will react in the reaction flow path. It can also be used as a surface reformer for connecting the exhaust flow path of the gas reaction device to the storage chamber. The gas to be treated in the gas mixing device and the gas reaction device of the present invention is not limited to a gas at normal temperature, and includes a liquefied gas that vaporizes when heated. As long as the mixing device is heated, the gas can be heated to a uniform temperature. When a plurality of gases are conveyed to a mixing device, the motion is disturbed by the collision of high-speed gas in the mixed flow path, so that the plurality of gases are stirred to be uniform. In addition, when passing through the mixed flow path, it collides with the wall surface at a plurality of points, so that the plurality of gases can be more uniformly stirred and discharged to the discharge flow path. When a structure having a vacuum extractor is provided, a plurality of gases input to the vacuum extractor are mixed and the mixed gas is released. -8- IDDi (5) (5) 200402325 When the pump is connected to the reaction gas discharge port of the gas reaction furnace, the pump can be used to discharge the reaction gas from the reaction furnace. When the same type or plural processing gases are to be conveyed to the reaction flow path, the collision and turbulent motion of the high-speed gas in the flow path causes the same type or plural processing gases to collide with each other many times. In a gas, molecules or atoms move at a fast speed, and they repeatedly collide with each other many times to become irregular movements. Therefore, when the flow path is heated at this time, a heat treatment gas is also added. When the heating temperature is increased, the processing gas becomes reactive. Even if the amount of processing gas flowing in the flow path is increased, the gas flow velocity in the flow path will be increased, and the number of collisions with the wall surface will be increased, so that more heat will be given from the wall surface. Therefore, even the treatment is increased The amount of gas can also perform the heating reaction in the same flow path with good efficiency. As long as the number of annular flow paths is increased, the number of collision and disturbing motions of the processing gas can be increased, so that the processing gas can be made high. Reacts densely. Furthermore, during the reaction of a plurality of process gases, a plurality of process gases can be uniformly mixed and stirred, so that a reaction gas mixed into a uniform state can be generated. At this time, if the flow path is heated up to the reaction temperature of the processing gas, a large amount of reaction gas with uniform temperature and uniform mixing can be produced under the pressure of the processing gas. The reaction gas heated to the reaction temperature flows out of the discharge flow path by the pressure of the processing gas. (6) (6) 200402325 According to the present invention configured as described above, when the structure of the mixing device is heated, the gas can be uniformly heated until it is close to the reaction temperature in the reaction furnace and supplied. In addition, when a structure in which a plurality of gases are transported in a mixed flow path is used, the plurality of gases to be supplied in the reaction furnace can be uniformly stirred by the structure. According to the constitution of the present invention as described above, as long as it is a flow path processing gas In the gas reaction flow path heated to the reaction temperature, a reaction gas having a uniform temperature can be produced. Furthermore, when a structure is provided in which a plurality of processing gases are conveyed in a gas reaction flow path, a reaction gas having a uniform temperature and uniform mixing can be manufactured. [Embodiment] Hereinafter, embodiments of the present invention will be described with reference to the drawings. In the embodiment, the type of the gas is not required as the gas for the processing gas. However, as an example, air, N2 (nitrogen), O2 (oxygen, H2 (gas), Ar (ammonia), One of the general gases such as He (gas), H20 (water), CO2 (carbon dioxide), CO (-nitrogen oxide), NH3 (ammonia), CF4 (methane tetrafluoride), SF6 (hexafluoro Liquefied gases such as sulfur), CH4 (Koin), Si (C〇2H5) 4 (tetraethoxy sand), and any mixed gas may be used. Gases other than the above may be used freely Select a processing gas that is suitable for the purpose of processing. The embodiment shown in Figure 1 is one that can supply multiple gases to the reaction path -10- (7) (7) 200402325. This example shows the use of gas A, gas B, the state of the three types of gas C. Mass flow 3, mixing device 2, and reaction furnace 1 are connected by piping. The piping is made of high temperature resistant metals, ceramics, etc. Gas A, Gas B, Gas C The mass flow (mass flow) 3 is used to adjust the flow rate, and it is transported by the respective pressure. From the mixing device 2, any of the gases A, B, and C can be supplied to the reaction furnace. The mixing device 2 is provided with a mixed flow as described in detail in FIGS. 7 to 9. Each gas system enters the supply-side tank 26 through the supply flow path 22 of the mixing device 2. The gas system that generates a collision in the tank 26 is connected to the inlets 28 of the plurality of flow paths 25 connected to the tank 26 by The outlet 29 of the communicating flow path enters the annular flow path 24 from the inlet 31 of the first layer of the annular flow path 24, and collides with the wall surface of the annular flow path 24. The incoming gases collide with each other. Similarly, high-speed gas flows from the outflow port 32 of the annular flow path 24 on the first floor through the inflow ports 28 of the plurality of communication flow paths 25 connected to the annular flow path 24. The inflow passage 31 of the communicating flow passage 29 entering the annular flow passage 24 of the second layer flows into the annular flow passage 24 and collides with the wall surface of the annular flow passage 24. The gases entering the inflow port collide with each other, and the same is repeated in this state. Connected to the final annular flow-11-(8) (8) 200402325 The communication inlet 25 of the channel 24 flows into the inlet 28 and enters the groove 27 through the outlet 29 of the communication flow. The gas that collides with the inner surface of the groove 27 Will be discharged from the discharge flow path 23. At this time, if the plurality of mixing devices 2 provided in the container 6 are heated by the electric heater 4 or the like, the gas A, gas B, and gas C in the mixed flow path 21, The gas will be heated uniformly by the collision and turbulence of the gas. In order to adjust the temperature of the electric heater, the temperature of the gas A, the gas B, and the gas C can be just before the reaction temperature of the reaction furnace. The mixing device 2 and the container 6 are made of metal or ceramic which can withstand the high temperature of the electric heater 4. The gas A, gas B, and gas C heated uniformly until immediately before the reaction temperature are transferred to the reaction furnace 1 installed in the container 7 through a pipe. The reaction furnace 1 and the container are made of metal or ceramic which can withstand high-temperature reaction temperatures. As for the gas A, gas B, and gas C entering the reaction furnace 1, they are further heated by the electric heater 5 or the like in the reaction furnace, so that the reaction temperature can be quickly reached. Instead of the electric heater 4 or the electric heater 5, the heating power generated by a burner of petroleum, natural gas, or the like may be used, or microwave heating or induction heating may be used. The reaction gas after the completion (end) of the reaction is released from the outside of the reaction furnace 1 by the pressure it has. The embodiment shown in FIG. 2 is the same as the embodiment shown in FIG. 1 except that the vacuum pump 8 is connected to the gas outlet of the reactor 1 in the embodiment shown in FIG. 1. . The mass flow 3, the mixing device 2, the reaction furnace 1, and the vacuum extractor 8 are connected by piping. The piping 200402325 〇) is made of metal and ceramic that can withstand high temperatures. When the mass flow 3, the mixing device 2, and the reaction furnace 1 are vacuum-sucked by a vacuum pump (pump) 8, a plurality of gases can be easily flowed from the mass flow 3 to the mixing device 2 and the reaction furnace 1. After completion of the reaction, the reaction gas is attracted to the outside of the reaction furnace by the pump 8. The embodiment shown in Fig. 3 is capable of supplying a plurality of gas to the reaction path. This embodiment shows a case where three types of gas A, gas B, and gas C are used. The gas A, the gas B, and the gas C are the respective mass flows 3 to adjust the flow rate, and are conveyed to the mixing device 2 by being concentrated in a pipe before the mixing device 2 by the pressure of the respective gas itself. Therefore, any of the gas A, the gas B, and the gas C can be supplied to the reaction furnace. The mass flow 3, the mixing device 2, the reaction furnace 1, and the vacuum extractor 8 are connected by piping. The piping is made of metal, ceramic, etc. that can withstand high temperatures. When vacuum suction is performed by the vacuum pump 8 for the mass flow 3, the mixing device 2, and the reaction furnace 1, a plurality of gases can be supplied from the mass flow to the mixing device 2 and the reaction furnace 1. The mixing device 2 is provided with a mixing flow path as described later in FIGS. 7 to 9. The plural gas A, gas B, and gas C enter the supply-side groove 26 through the same supply channel 22 of the mixing device 2. The mixed gas formed by the gas A, gas B, and gas C that collided in the tank 26 will pass through the inflow port of the plurality of communication flow paths 25 connected to the tank 26, and from this communication -13- (10) (10 200402325 The outlet 29 of the flow path enters the annular flow path 24 from the annular flow path 24 in the first layer, and enters into the annular flow path 24, and collides with the wall surface of the annular flow path 24. The incoming mixed gases collide with each other. Similarly, the high-speed mixed gas flows from the outlet 32 of the annular flow path 24 on the first layer, passes through the inlet 28 of the plurality of communication flow paths 25 connected to the annular flow path 24, and passes through the communication flow path outlet 29 The ring-shaped flow path 24, which flows into the second-level flow inlet 24, flows into the ring-shaped flow path 24, so as to collide with the wall surface of the ring-shaped flow path 24, it will enter through different flow inlets. The mixed gases collide with each other. The above-mentioned case is repeated, and a plurality of communication flow paths 25 connected to the final annular flow path 24 flow into the inlet 28, and enter the groove 27 from the communication flow path flow outlet 29. The mixed gas that collides with the inner surface of the tank 27 is discharged by the discharge channel 23 with uniform stirring and mixing. When the mixing device 2 provided in the container 6 is heated by the electric heater 4, the mixed gas in the mixed flow path 21 can be heated and uniformed by the collision and turbulence of the gas. By adjusting the temperature of the electric heater 4, the mixed gas can be heated to a temperature just before the reaction temperature of the reaction furnace 1. The mixing device 2 and the container 6 are made of high temperature resistant metals, ceramics, etc. 0 The mixed gas is stirred and uniformly heated to the temperature just before the reaction temperature, and will be transported to the reaction provided in the container 7 through a pipe. Furnace 1. The reaction furnace 1 and the container 7 are made of a metal or ceramic capable of withstanding a high-temperature reaction temperature. The mixture entering the reaction furnace 1 is uniformly heated to -14- (11) (11) 200402325. The mixed gas just before the reaction temperature will be further heated by the electric heater 5 to quickly reach the reaction temperature. It is also possible to use a burner of petroleum, natural gas, etc. instead of the electric heater 4 or the electric heater 5, or use microwave heating or induction heating. The reaction gas after the completion of the reaction will be attracted to the outside of the reaction furnace 1 by a vacuum pump (pump) 8. The embodiment shown in FIG. 4 can supply a plurality of gases to the reaction furnace. In the figure, three types of gas A, gas B, and gas C are used. The gas A whose flow rate is adjusted by the mass flow 3 enters the vacuum extractor 9. The mass flow 3, the vacuum extractor 9, the mixing device 2, and the reaction furnace 1 are connected by piping. The piping is made of high-temperature-resistant metal, ceramics, etc. ○ The gas B, which can be connected to the vacuum line of the vacuum extractor 9 together with A, is supplied to the reaction furnace. The gas B and the gas C can be caused to flow into the mixing device 2 through the vacuum aspirator 9 due to the attractive force generated when the gas A flows. In such a configuration, even if the vacuum pump is not used, a plurality of gases can easily flow into the same mixing device 2. The gas A, gas B, and gas C whose flow rate is adjusted by each mass flow 3 can be collected by the vacuum aspirator 9 and flowed into the supply-side tank 26 from the supply flow path 22 of the same mixing device. The mixed gas colliding in the tank 26 passes through the inlet 28 of the plurality of communication flow paths 25 connected to the tank 26 and the outlet 29 of the communication flow path 29 to the inlet 3 1- 15-
iDDO (12) (12)200402325 進入於該環狀流路24，且碰撞於環狀流路24壁面，又會 使從不同流入口 3 1所進入的混合氣體彼此產生碰撞。 而重複地進行該動作，並通過連接於最後之環狀流路 24的複數之連通流路25流入口且從該連通流路的流出口 29來流入於槽27。至於碰撞於槽27內面的混合氣體則由 排出流路23以攪拌混合成均勻之狀態來排出。 由電熱器4來加熱設置於容器6內的混合裝置2時， 合流路21內之混合氣體可由氣體的碰撞擾流運動而加熱 成均勻。又能以調整電熱器的溫度來加熱混合氣體直至成 爲剛如在於反應爐之反應溫度前的溫度。混合裝置2及容 器6係由能耐高溫之金屬、陶瓷所製造。 而成均勻地加熱直至剛好在於反應溫度前的混合氣體 ，將通過配管來輸送至設置於容器7內之反應爐1。反應 爐1及容器7係由能耐於高溫的反應爐之金屬、陶瓷等所 製造。至於進入於反應爐1的混合氣體係由反應爐內之電 熱器5等，更進一步地加熱，以致能迅速地達到反應溫度 〇 也可替代電熱器4或電熱器5而使用石油、天然瓦斯 等的燃燒器、或使用微波加熱、感應加熱等。 完結反應後之反應氣體，可由氣體本身所具有的壓力 來放出至反應爐1外面。再者，也可連接如第2圖記載之 實施例的真空泵於反應爐1之氣體排出口。 第5圖記載的實施例雖複數之氣體可爲二種類以上， 但在此，將使用氣體A、氣體B的二種類。iDDO (12) (12) 200402325 enters the annular flow path 24 and collides with the wall surface of the annular flow path 24, and the mixed gas entering from different inflow ports 31 will collide with each other. This operation is repeatedly performed, and flows into the groove 27 through a plurality of communication flow paths 25 connected to the inlet of the last annular flow path 24 and from the flow outlet 29 of the communication flow path. The mixed gas colliding with the inner surface of the tank 27 is discharged from the discharge channel 23 in a state of being stirred and mixed uniformly. When the mixing device 2 provided in the container 6 is heated by the electric heater 4, the mixed gas in the merge path 21 can be heated uniformly by the collision and turbulence movement of the gas. It is also possible to heat the mixed gas by adjusting the temperature of the electric heater until it becomes a temperature just before the reaction temperature of the reaction furnace. The mixing device 2 and the container 6 are made of a metal or ceramic capable of withstanding high temperatures. The mixed gas heated uniformly until immediately before the reaction temperature is transferred to the reaction furnace 1 provided in the container 7 through a pipe. The reaction furnace 1 and the container 7 are manufactured from metals, ceramics, and the like which can withstand high temperatures. As for the mixed gas system entering the reaction furnace 1, it is further heated by the electric heater 5 and the like in the reaction furnace so that the reaction temperature can be reached quickly. It can also replace the electric heater 4 or the electric heater 5 with petroleum, natural gas, etc. Burner, or use microwave heating, induction heating, etc. The reaction gas after the completion of the reaction can be released to the outside of the reaction furnace 1 by the pressure of the gas itself. The vacuum pump of the embodiment shown in Fig. 2 may be connected to the gas discharge port of the reaction furnace 1. Although the plurality of gases in the embodiment shown in FIG. 5 may be two or more types, two types of gas A and gas B are used here.
-16- (13) (13)200402325 氣體A、氣體B係由各自之質量流3實施流量調整， 且由各自之氣體本身所具有的壓力來輸送至混合裝置2。 質量流3、混合裝置2、反應爐1係由配管連接著。配管 係由能耐高溫之金屬、陶瓷等來製造。 在於混合裝置，配設如在以後會詳述之第7圖至第9 圖所記載的混合流路。 各氣體係由混合裝置2之供應流路22而流入於供應 側的槽26。而在槽26內產生碰撞之氣體，將通過連接於 槽26的複數之連通流路25流入口而由該流通流路的流出 口 29來從該第1層之環狀流路24流入口 3 1進入於該環 狀流路24，並碰撞於環狀流路24壁面，又使從不同流入 口 3 1所流入的氣體彼此產生碰撞。 且高速之氣體會同樣地從第1層環狀流路24流出口 會通過連接於該環狀流路24的複數之連通流路25流入口 且由該連通流路的流出口 29來通過第2層之環狀流路24 流入口 3 1而進入於該環狀流路24，以致會碰撞於環狀流 路24壁面的同時，會使從不同流入口所進入之氣體產生 碰撞。-16- (13) (13) 200402325 The gas A and gas B are flow-regulated by their respective mass flow 3, and are delivered to the mixing device 2 by the pressure of the respective gas itself. The mass flow 3, the mixing device 2, and the reaction furnace 1 are connected by pipes. The piping is made of metal, ceramic, etc. that can withstand high temperatures. The mixing device is provided with a mixing flow path described in FIGS. 7 to 9 described in detail later. Each gas system flows into the supply-side tank 26 through the supply flow path 22 of the mixing device 2. On the other hand, the gas that has collided in the groove 26 passes through the inlet of the plurality of communication channels 25 connected to the groove 26 and the outlet 29 of the circulation channel through the outlet 29 of the circulation channel. 1 enters this annular flow path 24 and collides with the wall surface of the annular flow path 24, and the gases flowing in from different inflow ports 31 collide with each other. And the high-speed gas similarly flows from the first-stage annular flow path 24 through the outlet through a plurality of communication flow paths 25 connected to the annular flow path 24 and through the communication flow path 29 through the first outlet. The two-layer annular flow path 24 has an inlet 31 and enters into the annular flow path 24, so that at the same time as colliding with the wall surface of the annular flow path 24, gas entering from different inlets may collide.
而予以重複地進行同樣動作來通過連接於最後的環狀 流路24之複數的連通流路25流入口，並從該連通流路之 流出口 29來進入於槽27。碰撞於槽27內面的氣體，會 由排出流路23所排出。當以電熱器4等加熱設置於容器 6內之混合裝置2時，可由混合流路2 1內的氣體A、氣體 B之碰撞擾流運動而加熱成均勻。倘若令氣體A、氣體B (14) (14)200402325 的電熱器之溫度調整作成各別獨立時，就可加熱反應溫度 爲相異的氣體A、氣體B之溫度成爲剛好在反應爐內最適 合於反應的溫度之前。混合裝置2及容器6係由能耐於 電熱器4的高溫之金屬、陶瓷所製造。 而獨自加熱至最適合於在反應爐內的反應之溫度前的 氣體A、氣體B，係通過配管來輸送至設置於容器7內之 反應爐1。反應爐1及容器7係由能耐於高溫之反應溫度 的金屬、陶瓷等所製造，而進入於反應爐1之氣體A，氣 體係由電熬器5等，更進一步加熱而可迅速地達到反應溫 度。 也可替代電熱器4或電熱器5而使用石油、天然瓦斯 等之燃燒器的火力、或使用微波加熱、反應加熱等。 而完結反應後之反應氣體係由反應氣體本身所具有的 壓力來放出於反應爐1外面。 第6圖記載之實施例係除了連接真空泵8於第5圖記 載的實施例之反應爐1的氣體排出口以外，其他爲與第5 圖記載之實施例相同。 質量流3、混合裝置2、反應爐1、真空泵8係由配 管連接著。配管係由能耐於高溫之金屬、陶瓷等所製造。 當質量流3和混合裝置及反應爐1由真空泵8被真空 吸引時，就可容易地令氣體A、氣體B從質量流予以流動 至混合裝置2、反應爐1。 完結反應後的反應氣體係由真空泵8來吸引至反應爐 外面。 (15) (15)200402325 從第7圖至第1 0圖係顯示使用於以上之各實施例用 的混合流路及第1 1圖以下之各實施例的氣體反應裝置1 2 的反應流路之具體性結構者。在第11圖以下之各實施例 的氣體反應裝置來使用時，由於會在流路引起反應，因而 使用反應流路之稱呼，但流路的結構係與混合流路者相同 。以下，雖說明有關混合流路之狀態，但予以換置混合流 路爲反應流路的稱呼時，就會成爲反應流路的說明。 第7圖係以配管來製造在本發明之以上實施例裝置所 使用的混合流路時之斜視圖。 管材係以例如金屬、陶瓷等所製成。 本實施例的混合裝置2係由混合流路21，供應氣體 給予該混合流路2 1用之供應流路22，及排出用排出流路 2 3所形成。而混合流路21係由環狀流路24和連通流路 25，導入來自供應流路22之氣體至連通流路25用的槽26 ，及導入來自連通流路25之氣體至排出流路23用的槽 27所形成。在於各環狀流路配設有環狀流路之流入口 3 1 ，流出口 3 2，而在該流入口 3 1連接了連通流路的流出口 29 ’在於環狀流路之流出口 32則連接了連通流路的流入 □ 28 〇 環狀流路可爲1以上之任意數量。連通流路可爲2以 上的數量。於本發明實施例之第7圖記載者，使用環狀流 路爲5個，通流路爲6個。 於第8圖記載者係使用環狀流路2個，連通流路6個 者’而在第9圖記載者則使用環狀流路1個，連通流路4 -19- (16) (16)200402325 個者。 第8圖係顯示使用於本發明一實施例的氣體混合裝置 ’氣體反應裝置之混合流路予以分爲部件（Block)所製 作的圖。 於圖中，係從構件5 1依序結合至構件5 8來製造混合 流路。構件54 ' 56係如圖之圓筒狀的構件，而相鄰接之 構件5 5、5 7配設有凸部於中央，且由其和另一方相鄰接 的構件來形成爲環狀流路24、24。又在構件53、55、57 配設具有流入口 2 8、流出口 2 9之連通流路2 5。再者，以 構件57、58來形成供應側的槽26，而以構件51、52、53 來形成排側的槽2 7。 構件53之連通流路25的流入口係成爲以構件53、 54、 5 5所形成之環狀流路24的流出口 3 2，而構件5 5之 連通流路25流出口 29係將成爲該環狀流路25的流入口 3 1者。又構件5 5之連通流路25流入口 28係成爲以構件 55、 56、57所形成的環狀流路24之流出口 32，而構件 5 7的連通流路2 5流出口 29係成爲該環狀流路之流入口 3 1者。 再者，當然也可令供應側和排出側成爲相反。 第9圖係顯示使一部分成爲管，一部分成爲構件來製 造使用於本發明之一實施例的氣體混合裝置、氣體反應裝 置之圖。 依據第9圖者，乃從構件5 1依序結合至構件6 0來製 造混流路。構件5 6係如圖之圓筒狀的構件，而相鄰的構 10/ -20- (17) (17)200402325 件5 7中央配設有凸部，而由其與另一方之相鄰接構件5 5 來形成爲環狀流路2 4。又在構件5 3、5 5、5 7、5 9，配設 有與連通流路連接用的連接孔3 0。再者，以構件5 9、6 0 來形成供應側之槽2 6，而以構件5 1、5 2、5 3來形成排出 側的槽27。構件54和構件58，將成爲具有流入口 28， 流出口 29之連通流路25。 構件55的連接口 30，將成爲環狀流路24之流出口 32，而構件5 7的連接口 3 0，將成爲環狀流路24之流入 口 3 1 者。 再者，當然也可令供應側和排出側成爲相反。 於第8圖、第9圖所記載的混合流路，可採用予以雕 刻流路於陶瓷、金屬等之材質內的方法，以拉製或壓製金 屬板之方法，以利鑄模等來冷却只除了流路的空間部之鑄 件、玻璃等的流動體來凝固之方法，以從外部推壓來凝固 、弄乾、燒結除了流路的空間部分來固化陶瓷等之流動體 而形成流路的方法等。 又在第9圖所記載者，對於一部分，以利用管材來作 成可容易地製造連通流路。由而，可作成爲能大量生產混 合流路，且可令裝置成爲小型化。又較全部使用成部件（ Block )化時，可作成爲維持著熱交換性能狀態下，形成 小型且容易達成大量生產者。 作爲第1 1圖記載之實施例時的利用例子，可由反應 CH4(甲院）和H2〇(水蒸氣）之混合氣體來製造CO ( — 氧化碳）和H2 (氫）的混合氣體，使得可重整（改良性 (18) (18)200402325 質）CHU (甲烷）。以反應H2 (氫）和CO (—氧化碳） 之混合氣體時，可合成CH3〇H (甲醇）。 而可由組合其他之種種處理氣體來製造種種化學反應 生成物。 氣體反應裝置1 2、質量流1 3係由配管連接著。氣體 A係由質量流1 3來調整流量並由氣體本身所具有之壓力 而輸送至反應裝置12，且以電熱器14來加熱。電熱器14 係由加熱器控制部1 5來實施溫度控制。 而來自氣體反應裝置12之反應氣體A，將由配管等 來供予所要利用的場所。配管係以耐高溫之金屬、陶瓷等 所製成。 第1 2圖記載的實施例，係在第1 1圖記載之氣體反應 裝置12所生成的反應氣體予以供予儲積室17內之被處理 體1 6的材料表面，以形成薄膜於被處理體1 6表面，使得 可增進強度（耐磨損性、硬度等）或耐環境性（耐蝕性、 耐熱性等），或賦予功能（導電性、絕緣性、磁性等）者 。而作爲利用例，可由N2 (氮）之反應氣體、或N2 (氮 )和NH3 (氨）所混合的反應氣體來形成被處理體之氮化 膜，使得零件、工具類能成爲具有強度性。又可利用於形 成半導體晶圓的氮化膜等。 可由N2(氮）或Ar (氬）等之反應氣體’或N2、Ar 、CF4(四氟化甲院）、SF6(六氟化硫）等之任一混合的 反應氣體，而可洗淨（淸潔）被處理體表面’以致可洗淨 零件、工具類之表面。又也可洗淨半導體晶圓或玻璃基板 1:謂 -22- (19) (19)200402325 等的表面。 又由使用Ar (氬）或CHU(曱院）等之混合氣體的 反應氣體，而可達成零件、工具類之滲碳，使得可達成耐 磨耗、表面硬化。 而以加熱H20 (水）、h2o和H2 (氫）、水（H2o) 和02 (氧）的混合氣體所產生之水蒸氣，將可生成氧化 膜，因此，可利用於半導體用的晶圓等之氧化膜型成等。 可由Si(C2H50) 4(四乙氧基矽烷）的反應氣體來 形成具有保護膜、絕緣膜等之功能的薄膜於半導體用晶圓 等。 氣體反應裝置1 2、質量流1 3係以配管連接著。氣體 A，將由質量流1 3來調整流量且以氣體本身所具有之壓 力來輸送至氣體反應裝置12，而由電熱器14所加熱。電 熱器1 4乃由加熱器控制部1 5來進行控制溫度。 而在氣體反應裝置12加熱直至反應溫度爲止的反應 氣體A，將由氣體本身所具有之壓力而經由配管來供予儲 積室17，並輸送至設定於儲積室17之被處理體16。配管 係以耐高溫之金屬、陶瓷所製成。由於尤其在儲積室17 並不需要加熱氣體，因此，能以維持該狀態來進行表面的 重整。又儲積室17係形成可由非如容器11之耐高溫材質 來製造，且並不需要保持真空度。由於並不需要反應爐， 因而同時也不需要使用會在反應爐所會消耗之能量。 在於該程因可在開放系下來進行表面重整處理，使得 能在大氣下對被處理體1 6進行連續處理。The same operation is repeated to flow through the inlet of the plurality of communication flow paths 25 connected to the final annular flow path 24 and enter the groove 27 from the flow outlet 29 of the communication flow path. The gas hitting the inner surface of the groove 27 is discharged through the discharge flow path 23. When the mixing device 2 installed in the container 6 is heated by an electric heater 4 or the like, it can be heated uniformly by the collision and turbulent motion of the gas A and the gas B in the mixed flow path 21. If the temperature adjustment of the electric heaters of the gas A and gas B (14) (14) 200402325 is made independent, the temperature of the gas A and the gas B with different reaction temperatures can be heated to be the most suitable in the reactor Before the reaction temperature. The mixing device 2 and the container 6 are made of a metal or ceramic capable of withstanding the high temperature of the electric heater 4. On the other hand, the gas A and the gas B, which are heated to the temperature most suitable for the reaction in the reaction furnace, are transported to the reaction furnace 1 installed in the container 7 through a pipe. The reaction furnace 1 and the container 7 are made of metals, ceramics, and the like capable of withstanding high-temperature reaction temperatures, and the gas A entering the reaction furnace 1 and the gas system are heated by the electric boiler 5 and the like, and the reaction can be quickly reached. temperature. Instead of the electric heater 4 or the electric heater 5, the firepower of a burner such as petroleum or natural gas, or microwave heating or reaction heating may be used. The reaction gas system after the completion of the reaction is released from the outside of the reaction furnace 1 by the pressure of the reaction gas itself. The embodiment shown in Fig. 6 is the same as the embodiment shown in Fig. 5 except that the vacuum pump 8 is connected to the gas discharge port of the reactor 1 of the embodiment shown in Fig. 5. The mass flow 3, the mixing device 2, the reaction furnace 1, and the vacuum pump 8 are connected by piping. The piping is made of metal, ceramic, etc. that can withstand high temperatures. When the mass flow 3 and the mixing device and the reaction furnace 1 are vacuum-sucked by the vacuum pump 8, the gas A and the gas B can be easily flowed from the mass flow to the mixing device 2 and the reaction furnace 1. The reaction gas system after the completion of the reaction is sucked out of the reaction furnace by the vacuum pump 8. (15) (15) 200402325 Figures 7 to 10 show the mixing flow path used in the above examples and the reaction flow path of the gas reaction device 1 2 in each example shown in Figure 11 and below. The concrete structure. When the gas reaction device of each of the embodiments shown in Fig. 11 and below is used, a reaction flow path is used because it causes a reaction in the flow path, but the structure of the flow path is the same as that of the mixed flow path. Hereinafter, the state of the mixed flow path will be described, but when the mixed flow path is referred to as a reaction flow path, it will be described as a reaction flow path. Fig. 7 is an oblique view when a mixing flow path used in the apparatus according to the above embodiment of the present invention is manufactured by piping. The pipe is made of, for example, metal, ceramic, or the like. The mixing device 2 of this embodiment is formed of a mixing flow path 21, a supply flow path 22 for supplying gas to the mixing flow path 21, and a discharge flow path 23 for discharge. The mixed flow path 21 is the annular flow path 24 and the communication flow path 25, which introduces the gas from the supply flow path 22 to the groove 26 for the communication flow path 25, and introduces the gas from the communication flow path 25 to the discharge flow path 23. Used grooves 27 are formed. Each of the annular flow paths is provided with an inflow port 3 1 and an outflow port 3 2, and the inflow port 31 is connected to an outflow port 29 that communicates with the flow path. Then, the inflow □ 28 〇 connected to the communication flow path may be any number of 1 or more. The number of connected flow paths may be two or more. As shown in Fig. 7 of the embodiment of the present invention, five annular flow paths and six through flow paths are used. The person described in FIG. 8 uses two annular flow paths and six connected flow paths', while the person described in FIG. 9 uses one annular flow path and communicates with the flow paths 4 -19- (16) (16 ) 200,402,325 people. Fig. 8 is a diagram showing a mixing flow path of a gas mixing device used in an embodiment of the present invention and a gas reaction device divided into blocks. In the figure, the components 51 are sequentially coupled to the components 58 to manufacture a mixed flow path. The member 54 '56 is a cylindrical member as shown in the figure, and the adjacent members 5 5 and 5 7 are provided with a convex portion at the center, and are formed into an annular flow by the member adjacent to the other member. Road 24, 24. Further, the components 53, 55, 57 are provided with communication flow paths 25 having an inlet 28 and an outlet 29. Further, the supply-side grooves 26 are formed by the members 57 and 58, and the row-side grooves 27 are formed by the members 51, 52, and 53. The inflow port of the communication flow path 25 of the member 53 becomes the outflow port 3 2 of the annular flow path 24 formed by the members 53, 54, 5 5, and the outflow port 29 of the communication flow path 25 of the member 5 5 will become the same. The inlets 31 of the annular flow path 25 are one. In addition, the inflow port 28 of the communication flow path 25 of the member 5 5 is an outflow port 32 of the annular flow path 24 formed by the members 55, 56, and 57. The inflow port 29 of the communication flow path 25 of the member 5 7 becomes the same. The entrance to the annular flow path is 31. Furthermore, it is a matter of course that the supply side and the discharge side may be reversed. Fig. 9 is a view showing a part of a tube and a part of a member to manufacture a gas mixing device and a gas reaction device used in an embodiment of the present invention. According to the figure 9, the mixed flow path is manufactured by sequentially combining the component 51 to the component 60. The member 5 6 is a cylindrical member as shown in the figure, and the adjacent structure 10 / -20- (17) (17) 200402325 piece 5 7 is provided with a convex portion in the center and is connected to the adjacent one The member 5 5 is formed as an annular flow path 2 4. The members 5 3, 5 5, 5 7, 5 9 are also provided with connection holes 30 for connection with the communication flow path. Further, the supply-side grooves 26 are formed by the members 59, 60, and the discharge-side grooves 27 are formed by the members 5 1, 5 2, 5 3. The member 54 and the member 58 will be a communication flow path 25 having an inlet 28 and an outlet 29. The connection port 30 of the member 55 will become the outflow port 32 of the annular flow path 24, and the connection port 30 of the member 57 will become the inflow port 31 of the annular flow path 24. Furthermore, it is a matter of course that the supply side and the discharge side may be reversed. The mixed flow path shown in Figures 8 and 9 can be engraved in ceramics, metals, etc. The method can be used to draw or press a metal plate to cool the mold, etc. A method for solidifying a casting, glass, and other fluids in a space portion of a flow path, and a method of solidifying, drying, and sintering a fluid except a space part of a flow path to solidify a fluid such as ceramics to form a flow path. . In addition, as shown in FIG. 9, for a part, a communication channel can be easily manufactured by using a pipe material. As a result, it can be used as a mass production mixed flow path, and the device can be miniaturized. When it is used as a block, it can be used as a compact and easy to reach mass producer while maintaining heat exchange performance. As an example of use in the embodiment shown in FIG. 11, a mixed gas of CO (—carbon oxide) and H2 (hydrogen) can be produced by reacting a mixed gas of CH4 (Koyuan) and H2O (water vapor), so that it can be used. Reforming (modified (18) (18) 200402325 quality) CHU (methane). When reacting a mixed gas of H2 (hydrogen) and CO (-carbon oxide), CH3OH (methanol) can be synthesized. Various chemical reaction products can be produced by combining various other processing gases. The gas reaction device 1 2 and the mass flow 1 3 are connected by piping. The gas A is adjusted in its flow rate by the mass flow 13 and is sent to the reaction device 12 by the pressure of the gas itself, and is heated by an electric heater 14. The heater 14 is temperature-controlled by the heater control unit 15. The reaction gas A from the gas reaction device 12 is supplied to a place to be used by a pipe or the like. The piping is made of high temperature resistant metal, ceramic, etc. In the embodiment shown in FIG. 12, the reaction gas generated in the gas reaction device 12 shown in FIG. 11 is supplied to the material surface of the object 16 in the storage chamber 17 to form a thin film on the object. 16 Surfaces that make it possible to improve strength (abrasion resistance, hardness, etc.) or environmental resistance (corrosion resistance, heat resistance, etc.), or to provide functions (conductivity, insulation, magnetic properties, etc.). As an example of use, the nitrided film of the object can be formed from a reaction gas of N2 (nitrogen) or a reaction gas mixed of N2 (nitrogen) and NH3 (ammonia), so that parts and tools can have strength. It can also be used for forming nitride films on semiconductor wafers. It can be washed by reaction gas such as N2 (nitrogen) or Ar (argon), or any of N2, Ar, CF4 (tetrafluoromethane), SF6 (sulfur hexafluoride), etc.淸 clean) the surface of the object to be treated, so that the surface of parts and tools can be washed. It can also clean the surface of semiconductor wafer or glass substrate 1: -22- (19) (19) 200402325. Carburizing of parts and tools can be achieved by using a reaction gas of a mixed gas such as Ar (argon) or CHU (曱 院), so that abrasion resistance and surface hardening can be achieved. The water vapor generated by heating a mixed gas of H20 (water), h2o and H2 (hydrogen), water (H2o), and 02 (oxygen) will form an oxide film, so it can be used for semiconductor wafers, etc. The oxide film type is equal. A thin film having a function of a protective film, an insulating film, and the like can be formed from a reaction gas of Si (C2H50) 4 (tetraethoxysilane) on a semiconductor wafer or the like. The gas reaction device 1 2 and the mass flow 1 3 are connected by piping. The gas A is adjusted in its flow rate by the mass flow 13 and delivered to the gas reaction device 12 at the pressure of the gas itself, and is heated by the electric heater 14. The heater 14 is controlled by a heater control unit 15. On the other hand, the reaction gas A heated up to the reaction temperature in the gas reaction device 12 is supplied to the storage chamber 17 through a pipe by the pressure of the gas itself, and is sent to the processing object 16 set in the storage chamber 17. The piping is made of high temperature resistant metal and ceramic. Since heating gas is not particularly required in the storage chamber 17, the surface can be reformed while maintaining this state. The storage chamber 17 is formed of a high-temperature resistant material other than the container 11, and does not need to maintain a vacuum degree. Since no reaction furnace is needed, it is not necessary to use the energy that would be consumed in the reaction furnace. The reason is that the surface can be subjected to surface reforming in the open system, so that the object 16 can be continuously processed in the atmosphere.
-23- (20) (20)200402325 而完結被處理體16的表面處理後之反應氣體，可由 氣體本身所具有之壓力來排氣至儲集室17外面。， 在於第1 1圖、第1 2圖的任一實施例，也均配設有與 作爲前述之混合流路構造所詳述的圖7至圖1 0所記載者 同樣之氣體反應流路於氣體反應裝置1 2。 氣體Α係氣體反應裝置12的供應流路22進入於供 應側之槽26。而在槽26內產生碰撞的氣體A，將通過連 接於槽26之複數的連通流路25流入口 28，且從該連通 流路之流出口 29進入於第1層的環狀流路24流入口 3 1 並進入於環狀流路24，以致會碰撞於環狀流路24之壁面 ，又令從不同流入口 3 1所進入之氣體A彼此產生碰撞。 同樣地高速氣體會從第1層的環狀流路24流出口 3 2 通過連接於該環狀流路24之複數的連通流路25流入口 28，且從該連通流路之流出口 29通過第2層環狀流路24 的流入口 3 1而進入於該環狀流路2 4，並產生碰撞於環狀 流路24壁面之同時，也會使從不同流入口所進入的氣體 A產生碰撞。又重複地進行同樣之如此過程，且通過連接 於最後的環狀流路24之複數連通流路25的流入口 28而 從該連通流路之流出口 29進入於槽27。至於碰撞於槽27 內面之氣體A則會從排出流路2 3排出。 當以電熱器14等來加熱設置於容器11內的氣體反應 裝置12時，流路21內之氣體A會由氣體的碰撞擾流運 動而被加熱成均勻，因此’能有效率地來產生具有均勻混 合，均勻溫度的大量反應氣體。電熱器14係可由加熱器 -24- (21) 200402325 控制部1 5來控制成對於反應爲適當，正確之禮 氣體反應裝置12及容器11係以能耐於電 高溫之金屬、陶瓷等來製造。 而以環狀流路之層數量，調整電熱器的溫 制氣體A之反應度。 也可替代電熱器14而使用由石油、天然 燒器所產生之火力，或使用微波加熱、感應加 其在於不需要控制反應氣體的溫度時，也可利 、燃料電池等之各種排氣。 第1 3圖記載之實施例係除了在第1 2圖記 中設置了複數的儲積室1 7以外，與第1 2圖記 爲同樣者。 由於可由氣體反應裝置1 2的特性而可產 應氣體，因而，能由一氣體反應裝置12來對 分別進行同種或別種之被處理體的表面重整處 第1 4圖記載的實施例係即使在第1 2圖記 ，以省略儲積室1 7而僅利用被處理體1 6，也 理體16之表面重整的系統。作爲一例子，將 應來自氣體反應裝置12之反應氣體給予單數 管等之被處理體16的內表面來進行管內之表 可增進只所需要部分之強度（耐磨耗性、硬度 境性（耐鈾性、耐熱性等），或可賦予功能（ 緣性、磁性等）。依據此一方法，不僅不需要 而已，且可只對於需要功能部分以選擇性地實 I度。 熱器14的 度，就可控 瓦斯等的燃 熱等。又尤 用來自引擎 載的實施例 載之實施例 生大量之反 於各儲積室 理等。 載的實施例 可實施被處 予以直接供 或複數的配 面重整，就 等）或耐環 導電性、絕 丨儲積室1 7 施表面重整 -25- (22) (22)200402325 以上所述之第11圖至第14圖記載的實施例之氣體反 應裝置，均配設有第1 7圖至第1 〇圖記載的氣體反應流路 。有關氣體反應流路之結構係與使用於氣體混合裝置的混 合流路之結構形成同樣。又有關流氣體於內部的狀況係與 說明有關第1圖至第6圖所記載之氣體混合裝置實施例者 同樣。 〔產業上之可利用性〕 如以上，有關本發明之氣體混合裝置、氣體反應裝置 及表面重整裝置係會在各種各樣的用途中，作爲氣體之混 合，反應用之裝置，又作爲重整材料表面的裝置極有用， 尤其，適合於使用在化學反應過程或半導體製造過程等所 使用之氣體混合裝置、氣體反應裝置及使用於實施半導體 晶圓或玻璃基板等的表面處理、或進行零件、工具類之表 面處理等的表面重整裝置。 【圖式之簡單說明】 第1圖係顯示本發明之一實施例的氣體混合裝置及氣 體反應裝置之系統圖。 第2圖係顯示本發明之其他實施例的氣體混合裝置及 氣體反應裝置之系統圖。 第3圖係顯示本發明之其他實施例的氣體混合裝置及 氣體反應裝置之系統圖。 -26- (23) (23)200402325 第4圖係顯示本發明之其他實施例的氣體混合裝置及 氣體反應裝置之系統圖。 第5圖係顯示本發明之其他實施例的氣體混合裝置及 氣體反應裝置之系統圖。 第6圖係顯示本發明之其他實施例的氣體混合裝置及 氣體反應裝置之系統圖。 第7圖係以配管來製造使用於本發明實施例之裝置的 混合流路、反應流路時之斜視（立體）圖。 第8圖係以部件化來製造使用於本發明實施例之裝置 的混合流路、反應流路時之斜視圖。 第9圖係一部分利用管材、一部分予以部件化來製造 使用於本發明實施例之裝置的混合流路、反應流路時之斜 視圖。 第1 0圖係顯示以分解第7圖記載之混合流路、反應流 路的環狀流路與連通流路之連接部分的狀態之斜視圖。 第1 1圖係顯示本發明之一實施例的氣體反應裝置之系 統圖。 第1 2圖係顯示本發明之其他實施例的氣體反應裝置及 表面重整裝置（薄膜形成裝置）之系統圖。 第1 3圖係顯示本發明之其他實施例的氣體反應裝置及 表面重整裝置（薄膜形成裝置）之系統圖。 第1 4圖係顯示本發明之其他實施例的氣體反應裝置及 表面重整裝置（薄膜形成裝置）之系統圖。 第1 5圖係在第12圖之流程中，從流量計1 3輸送02 (24) 200402325 (氧）和H2〇 (水）的混合氣體於反應裝置12，且以加 熱器控制部控制電熱器1 4來輸送加熱至反應溫度爲止的 過熱蒸氣於儲積室1 7時之溫度特性圖。而加熱至各反應 溫度爲止的過熱蒸氣係將在儲積室17內利用於形成作爲 被處理體之半導體用晶圓的氧化膜用等。而在此所產生之 過熱蒸氣係相當於氣體A。 【主要元件對照表】 1 反 應 爐 2 混 合 裝 置 3 質 量 流 Λ 流 量 計 等 4 電 熱 器 微 波 加 熱 5 電 熱 器 Λ 微 波 加 熱 6 容 器 7 容 器 8 真 空 泵 9 真 空 抽 术V 器 11 容 器 12 氣 體 反 應 裝 置 13 質 量 流 Λ 流 量 計 等 14 電 熱 器 、 微 波 加 熱 15 加 熱 器 控 制 部 16 被 處 理 m 目S 17 儲 積 室 感應加熱、燃燒器等 感應加熱等 - 感應加熱、燃燒器等 ^ -28 (25) 混合流路、反應流路 供應流路 排出流路 環狀流路 連通流路 供應側的槽 排出側的槽 連通流路之流入口 連通流路之流出口 連接口 環狀流路的流入口 環狀流路的流出口 構件 構件 構件 構件 構件 構件 構件 構件 構件 構件 -29-23- (20) (20) 200402325 And the reaction gas after the surface treatment of the treated object 16 can be exhausted to the outside of the storage chamber 17 by the pressure of the gas itself. In any of the embodiments shown in FIG. 11 and FIG. 12, the same gas reaction flow path as described in FIG. 7 to FIG. 10 described in detail as the above-mentioned mixed flow path structure is provided.气 反应 装置 1 2。 Gas reaction device 12. The supply channel 22 of the gas A-based gas reaction device 12 enters a groove 26 on the supply side. On the other hand, the gas A that collided in the tank 26 will flow through the inlet 28 of the plurality of communication flow paths 25 connected to the tank 26, and enter the annular flow path 24 of the first layer from the flow outlet 29 of the communication flow path. The inlet 3 1 also enters the annular flow path 24 so that it will collide with the wall surface of the annular flow path 24 and cause the gases A entering from different inlets 31 to collide with each other. Similarly, the high-speed gas flows from the annular flow path 24 on the first layer through the outlet 3 2 through the plurality of communication flow paths 25 connected to the annular flow path 24 and the inlet 28, and through the communication flow path 29 The inlet 31 of the annular flow channel 24 of the second layer enters the annular flow channel 24 and collides with the wall surface of the annular flow channel 24. At the same time, the gas A entering from different inlets is also generated. collision. The same process is repeated, and the groove 27 is entered from the outlet 29 of the plurality of communication flow paths 25 connected to the final annular flow path 24 through the flow inlet 29 of the communication flow path. As for the gas A hitting the inner surface of the groove 27, it is discharged from the discharge flow path 23. When the gas reaction device 12 provided in the container 11 is heated by an electric heater 14 or the like, the gas A in the flow path 21 is heated to uniformity by the collision and turbulent motion of the gas. Large amount of reaction gas with uniform mixing and uniform temperature. The electric heater 14 is controlled by the heater -24- (21) 200402325. The control unit 15 is appropriate for the reaction. The correct etiquette. The gas reaction device 12 and the container 11 are made of metal, ceramics, etc., which can withstand electric high temperature. The number of layers of the annular flow path is used to adjust the reactivity of the heating gas A of the electric heater. Instead of the electric heater 14, it is also possible to use the firepower generated by petroleum or natural burners, or to use microwave heating and induction plus various exhaust gases such as fuel cells and fuel cells when the temperature of the reaction gas does not need to be controlled. The embodiment shown in Fig. 13 is the same as that shown in Fig. 12 except that a plurality of storage chambers 17 are provided in Fig. 12. Since the response gas can be produced by the characteristics of the gas reaction device 12, the gas reaction device 12 can be used to reform the surfaces of the same or different types of objects to be treated. In FIG. 12, a system for reforming the surface of the body 16 is used in order to omit the storage chamber 17 and use only the body 16 to be processed. As an example, giving the reaction gas from the gas reaction device 12 to the inner surface of the to-be-processed object 16 such as a singular tube to perform the surface inside the tube can improve the strength of only the required parts (abrasion resistance, hardness environment ( Uranium resistance, heat resistance, etc.), or functions (marginality, magnetism, etc.) may be imparted. According to this method, not only is unnecessary, but only the functional part is required to selectively achieve 1 degree. Degree, you can control the combustion of gas, etc., but also use the embodiment from the engine, the embodiment contains a large number of contrary to each storage room management, etc. The embodiment can be implemented by direct supply or multiple Matching surface reformation, etc.) or ring-conducting conductivity, insulation chamber 17 7 Surface reforming -25- (22) (22) 200402325 The examples described in Figures 11 to 14 described above The gas reaction devices are each provided with a gas reaction flow path as shown in FIGS. 17 to 10. The structure of the gas reaction flow path is the same as the structure of the mixing flow path used in the gas mixing device. The internal conditions of the flowing gas are the same as those described in connection with the gas mixing device embodiments shown in Figs. [Industrial Applicability] As described above, the gas mixing device, the gas reaction device, and the surface reforming device according to the present invention are used as a gas mixing and reaction device in various applications as a heavy-duty device. The device for finishing the surface of the material is extremely useful. In particular, it is suitable for the use of a gas mixing device, a gas reaction device used in a chemical reaction process or a semiconductor manufacturing process, a surface treatment of a semiconductor wafer, a glass substrate, or the like. Surface reforming device for surface treatment of tools and tools. [Brief description of the drawings] Fig. 1 is a system diagram showing a gas mixing device and a gas reaction device according to an embodiment of the present invention. Fig. 2 is a system diagram showing a gas mixing device and a gas reaction device according to another embodiment of the present invention. Fig. 3 is a system diagram showing a gas mixing device and a gas reaction device according to another embodiment of the present invention. -26- (23) (23) 200402325 Fig. 4 is a system diagram showing a gas mixing device and a gas reaction device according to other embodiments of the present invention. Fig. 5 is a system diagram showing a gas mixing device and a gas reaction device according to another embodiment of the present invention. Fig. 6 is a system diagram showing a gas mixing device and a gas reaction device according to another embodiment of the present invention. Fig. 7 is an oblique (stereoscopic) view when a mixing flow path and a reaction flow path used in the apparatus of the embodiment of the present invention are manufactured by piping. Fig. 8 is an oblique view when a mixing flow path and a reaction flow path used in the device of the embodiment of the present invention are manufactured in parts. Fig. 9 is a perspective view of a mixing flow path and a reaction flow path used in the apparatus of the embodiment of the present invention, in which a part is made of a pipe and a part is made into parts. Fig. 10 is a perspective view showing a state in which a connection portion of the annular flow path and the communication flow path of the mixing flow path, the reaction flow path, and the communication flow path shown in Fig. 7 is disassembled. Fig. 11 is a system diagram showing a gas reaction apparatus according to an embodiment of the present invention. Fig. 12 is a system diagram showing a gas reaction apparatus and a surface reforming apparatus (thin film forming apparatus) according to another embodiment of the present invention. Fig. 13 is a system diagram showing a gas reaction apparatus and a surface reforming apparatus (thin film forming apparatus) according to other embodiments of the present invention. Fig. 14 is a system diagram showing a gas reaction apparatus and a surface reforming apparatus (thin film forming apparatus) according to another embodiment of the present invention. Fig. 15 shows the flow of Fig. 12 in which the mixed gas of 02 (24) 200402325 (oxygen) and H20 (water) is sent from the flowmeter 13 to the reaction device 12, and the heater is controlled by the heater control unit. 14 is a temperature characteristic diagram when the superheated steam heated to the reaction temperature is transferred to the storage chamber 17. On the other hand, the superheated steam heated to the respective reaction temperatures is used in the storage chamber 17 for forming an oxide film of a semiconductor wafer to be processed. The superheated vapor generated here corresponds to the gas A. [Comparison table of main components] 1 reactor 2 mixing device 3 mass flow Λ flowmeter etc. 4 electric heater microwave heating 5 electric heater Λ microwave heating 6 container 7 container 8 vacuum pump 9 vacuum pumping device 11 container 12 gas reaction device 13 mass Flow Λ Flowmeter, etc. 14 Electric heater, microwave heating 15 Heater control unit 16 Processed m mesh S 17 Induction heating in storage room, induction heating in burner, etc.-Induction heating, burner, etc. ^ -28 (25) Mixed flow path 、 Reaction flow channel supply flow channel discharge flow channel annular flow channel communication flow channel supply side groove discharge flow channel inlet flow channel connection flow channel flow outlet connection port annular flow channel inlet flow channel Outlet member member member member member member member member member-29