TW200305915A - Method for manufacturing flat panel display substrates - Google Patents

Abstract

A system an method for generating thin film transistors, the system employing a non-excimer laser beam interacting with amorphous silicon disposed on a substrate surface to form mutually spaced apart silicon crystals on the surface.

Description

200305915 (1) 玖 、 发. 明说。 (A month should be stated in the month. The technical field, prior art, content, embodiments, and drawings of the invention are simple. The field of technology in this month is about operating and heating the film. The selected position on the material and more particularly the system and method are operable to cause the material in the material to form, for example, crystalline silicon deposited on a substrate, which can successively be incorporated into a known electronic device such as a transistor array of a flat display. / Thin-film transistors are used in a variety of different applications, including flat-screen displays. In some applications, thin-film transistors need to be constructed from crystallizing seconds. ° 秦 ^ Crystal and 7 of 4¾ -7Γ -V e 'rT » Wan Shiji deposited an amorphous silicon layer on a substrate, and then annealed the amorphous silicon for a second, and used two fields to heat the amorphous silicon in the field, for example, using the laser energy provided by excimer lasers. The present invention seeks improved systems and methods that provide for the transfer of laser energy to heat selected discontinuous areas on a substrate without actually heating other areas. The present invention seeks to provide improved Systems and methods to cause local changes in the physical properties of many discontinuous areas of a substrate. The present invention seeks to provide improved systems and methods for forming crystals on a substrate. Systems and methods for annealing amorphous systems The present invention further seeks to provide improvements 0 Shi Xi. The present invention further seeks to provide an improved substrate for manufacturing a flat-panel display. The manufacturing of the substrate utilizes the formation of many Shi Xi crystals on discontinuous areas. According to the general aspect of the present invention, many laser beams are used By heating (2) 200305915 a semi-crystalline fragment selected in a discontinuous area on the substrate surface.

Conductive precursors, such as non-junctions. Non-contact beam-on-beam and general-on-substrate surfaces are used in accordance with the present invention to interact with amorphous silicon to form silicon crystals thereon. The use of non-excimer lasers, non-excimer lasers and non-, silicon, silicon, such as amorphous silicon ^ ^ You V crystallize in non-continuous% area. According to another general aspect of the present invention, a pulsed laser beam with = is used to interact with non-crystallized silicon, such that the silicon is crystallized in a non-continuous region. According to another general aspect of the present invention, a pulsed laser beam with a total average power of less than 50 W is used with a pulsed laser to interact with an amorphous dream such as an amorphous dream 'to crystallize silicon in a discontinuous region. According to another general aspect of the present invention, many laser beams are used to interact with amorphous silicon, such as amorphous silicon, disposed on the substrate surface "while simultaneously forming mutually separated Shixi crystals on the surface. Many laser beams from a non- An excimer laser is selectively formed from a laser beam having a total average power less than that of the laser beam, or from a laser beam having a pulse repetition rate greater than 5 times, or from any suitable combination of the foregoing. In another general aspect of the present invention, a laser beam is divided into a plurality of beams, each of which directly strikes a positioner, which is operated to a selected position such that the secondary beam impacts on or near a # arranged on a substrate surface. One of the selected regions of crystalline silicon, so that a silicon crystal is formed in each selected region. Optionally, the laser beam is provided by a non-excimer laser, or by a pulsed laser with a total average power of less than 50W. Beams are provided, or pulse laser beams with a greater than 5 KHz pulse repetition rate between 200305915 (3) (3) or any preceding beam are provided in appropriate combinations. According to the present invention In a specific embodiment, the pitch is adjustable. According to the present invention-specific embodiments, there are provided manufacturing substrates with thin film transistors ..., including providing a substrate with broken deposits on its surface and transmitting many laser beams to the substrate at the same time. The first _ many non-continuous regions on the surface to cause μ tolerance-change in physical state, such as crystallization in these non-continuous regions by dissolution and subsequent cooling ... and unsupported in other regions

Subject to changes in physical state. This method is applied, for example, to the formation of a flat display such as a LED display. According to another specific embodiment of the present invention, "There is provided a method for manufacturing a substrate having a thin film transistor" including providing a substrate including a material, and removing a plurality of non-continuous region pairs, and at least a region other than the discontinuous region. This hood of silicon. Some silicon crystallized in discontinuous regions can also be removed. 1 is a simplified illustration of a system 10 for heating a substrate, for example, a silicon crystal is formed on a substrate 12 according to the present invention, such as polycrystalline silicon used on a flat display glass substrate. The system 10 includes a laser 14 controlled by a laser tethering unit 16. As shown in FIG. 1, the laser 14 is combined with a pulse supply unit 18, such as a Q switch, to output a pulse laser and a beam. In the specific embodiment of FIG. 1, the beam 20 first passes through a frequency converter 21, such as an or A plurality of non-linear crystals, and then pass through an optical system 22, such as a beam-shaping optical system, impinges on a beam splitter M, splitting the beam and reading the beam 26 multiple times. It should be known that laser 14 can directly output with 200305915

A laser beam of a desired frequency makes the inverter 21 unnecessary. It should further be understood that the secondary beam 26 may be provided by any suitable method, such as an array of laser diodes. Referring to the specific embodiment of FIG. 1, each light beam 26 leaves the beam splitter 24 at an appropriate angular direction so as to impinge on a reflecting plate 28 to direct the light beam to a designated area on the surface of the substrate 12. The reflecting plate 28 may include, for example, an array of fixed or adjustable directional reflecting elements (not shown) to provide further directional control of each light beam 26. Optionally, an angle expansion optical system (not shown) is interposed between the beam splitter 24 and the reflection plate 28. Note that the reduction in the number of beams and the exaggerated angle shown in Fig. 1 are for the sake of simplicity and easy understanding of the general concept of the present invention. Down the reflecting plate 28, the secondary beam passes through the increased optical system 30, including, for example, a focusing lens and a telecentric imaging lens, and impinges on the surface of the semiconductor rib body layer 32 covering the substrate 12, such as an amorphous chip. film. The optical system 30 may include an optical system that processes all of the group of sub-beams as seen, or an array optical system that processes each individual beam 26 individually. After the secondary light beam 26 impinges on each region 34 on the semiconductor precursor layer 32, the semiconductor precursor layer 32 is heated, as shown by the heat wave 36 in the figure. Heating occurs in area 34, but the front body layer is not actually heated elsewhere. That is, in the regions other than the region 34, no melting of the semiconductor precursor layer 32 occurs. Moreover, in the construction of a flat display, the heating region 34 does not dissolve the glass substrate or change its optical properties. When the semiconductor precursor layer is formed of, for example, amorphous silicon, the process of heating and subsequent cooling forms a silicon in each area that is impinged by the sub-beam% 200305915

The process of forming 38 by heating and cooling to form a silicon crystal 3 8 is called annealing. According to the present invention, in a specific embodiment, each secondary light beam 26 impinges on the semiconductor precursor layer 32 discontinuously, or each other. The separated region 34 is such that each crystal π formed in the semiconductor precursor layer is separated from another crystal 38. A particular feature of the present invention is that the laser 14 using the selectively annealed layer 32 is a relatively low power pulsed laser and excimer laser. The laser typically has an average power output that is smaller than a typical excimer laser used in industrial applications such as semiconductor or flat panel manufacturing. Suitable field shots have, for example, a level with an average power output of less than about 50W, and typically about 5-15W. And, the pulse reproduction rate for proper Q-switched laser operation is greater than about 5 KW. As a result, according to a specific embodiment of the present invention, in the process of selectively annealing the semiconductor precursor layer 32, a laser beam pointer is used to operate the laser beam% to actually point to the discontinuous regions 34 that need to form a crystal 38 instead of other regions. Typically, the crystal 38 is implemented only in those regions of an electrical garment manufactured by the substrate · 12, but not in other regions. The crystal typically occupies between 0.1-5% of the surface of the substrate 12, and typically about 1% of the surface. The present inventors have found that a frequency-converted q-switched laser, which outputs a light beam which is produced by the third resonance of a Nd ·· YAG solid-state laser, is suitable for use in the system 10. A suitable laser 14 emits pulses with a pulse repetition rate in the range of 5-100 & in a range ' with a range of duty cycles ranging from 1: 10-0 to 1: 10,00. The average power accompanying this suitable laser is less than about 50W. Although currently being developed for laser 200305915

The power can reach up to 15W, typically with an average power in the range between 5W and 10W. A commercial laser meets these requirements, and includes both the laser 14 and the frequency converter 21 as an integrated unit, which is an AVIAtm laser from Coherent, California, USA. The AVIAtm laser outputs an average power of approximately 7.5W, with a pulsed variable frequency UV laser at 355 nm. This beam has a pulse repetition rate of about 30 KHz and a pulse width of about 100 nsec. It is appreciated that any other suitable solid, gas or semiconductor pulsed non-excimer laser can be used. Similarly, in addition to generating resonance, other suitable forms of frequency conversion can be used. 1, the optical system 22 is used to appropriately expand and shape the light beam 20 so that it impinges on the beam splitter 24 and is split into a plurality of sub-beams 26, each of which causes the impingement to be specified on the surface of the substrate 12. Area. The optical system 22 may include a single optical element or multiple optical elements. The optical element can be any spherical, cylindrical, aspherical, holographic diffraction, or other suitable combination of optical elements known in the art of optical design. The beam splitter 24 may be any suitable beam splitter, such as a suitable array of diffractive elements. According to a specific embodiment of the present invention, the light beam 20 is divided into 80-120 sub-beams. Note that for simplicity, Lang means a smaller number of beams. Because a typical electronic device may include millions of thin film transistors, and typically only up to about 120 discontinuous regions 34 may be addressed at a given time, as known in the art, a shifter (not shown ) Move the substrate 12 and the system 10 relative to each other. The shifter enables crystals 38 to be formed in other parts of the layer 32. The choice of the number of beams 20 to be split into secondary beams 26 is a matter of design choice. This selection is functionally related to the energy required for the secondary beam to deliver to each area 34 200305915

density. Therefore, in order to anneal a sub-beam 26 having an energy density of about 500 mj / cm2 to a region 34 of about 20 μm in diameter, a laser 14 emits about 0. A 25 mJ pulsed beam will be split into approximately 100 sub-beams26. The present inventor believes that when the system 10 is used to anneal amorphous silicon, the use of many times of beams results in the enhancement of the crystal structure of the crystal 38 in the discontinuous region 34 compared to a system that uses a focused beam to substantially completely anneal the layer. When the secondary beam 26 is constructed and manipulated to completely melt the layer 32 to a relatively small area, generally in a region 34, the lateral crystal growth is excited in the region 34. Polycrystalline silicon is formed when the amorphous crystal is crystallized, and this lateral growth produces a relatively large grain of polycrystalline silicon. The phenomenon of promoting lateral growth may optimize the molten layer 3 2 'in each discontinuous region 34 so that the layer 32 in the non-continuous region 34 is completely and uniformly melted. The fused layer 32 can be optimized using the shaped secondary beam 26 as appropriate, for example, by appropriate optical design, including designing the optical system 22, beam splitter 24, and additional optical system 30. In order to ensure the uniformity of crystal formation 38, and to stimulate the required lateral growth ', it is necessary to ensure that an accurate and uniform laser energy dose is delivered to each region 34. The uniformity between the beams can be accomplished by an attenuator (not shown), such as a polarized beam cube, combined with each beam 26. Dose control of all beams can be accomplished by changing the pulse repetition rate of the laser 14, such as by controlling the pulse supply unit 18. And the 'sub-beam 26' can directly anneal the silicon in the discontinuous region 34 so that a silicon crystal having a desired shape is formed there. This can be done by controlling the positioning sub-beam 26 or by using an appropriate displacement of the substrate 12 during annealing. It is beneficial to form silicon crystals with the desired shape, or, for example, (8) 200305915

You treasure without a mask. Because the annealing and unannealed silicon removal rates are different, if etching is used, the removal of silicon can be affected, so that the deposited stone Xi Bone waste B is left, and the formation of the wafer 6 can be used in the subsequent operation of the transistor. j = j Consider FIG. 2 which is a simplified flowchart of forming a thin film transistor on a substrate using the system of FIG. 1. The method seen in Fig. 2 begins with the generation of a laser beam. For example, a Q-switched solid-state laser is used in combination with one or more non-linear crystals suitable for generating the first oscillation. The beam is passed through an appropriate beam splitter which is used to separate the laser beam into a number of sub-beams. According to a specific embodiment of the present invention, at least some of the sub-beams individually transmit impacts on the substrate surface to address individual discontinuous areas on the substrate. The substrate includes a semiconductor precursor layer, such as an amorphous silicon film, deposited on a glass, glass or other suitable substrate. Each sub-beam addressed area is at least partially separated from other sub-beam addressed areas. The Vichy beams are delivered to their individual areas at an energy density, and at some time or number of pulses, are sufficient to provide an energy dose to heat the semiconductor forehead epiphysis in the individual area of impact. The dosage is optimized enough to fully fuse the semiconductor precursors on the area hit by the primary beam without adversely greatly affecting the substrate deposited on the conductor precursor or causing the semiconductor precursors outside the area of the desired shape. After heating the semiconductor precursor, the substrate is cooled. This annealing process results in crystal growth in each area addressed by the sub-beam. The process of delivering the light beam once, heating the semiconductor substrate, and then cooling is repeated until many desired areas on all workpieces are properly annealed. In a specific embodiment of the present invention, the required area is the one that needs to be formed-a transistor or other semiconductor element. (9) 200305915

Some areas. After annealing needs to form an area of each crystal or other semiconductor element, the other semiconductor precursors are non-regressive areas, such as those that have not changed to crystallized polycrystalline silicon—a shape ~ wood, (The part of amorphous silicon is removed. It can be removed, for example, by using I insect engraving or by paying 1, other official removal techniques.

The remaining part of the semiconductor precursor is known, and therefore, for example, the position of one of the mothers of the polycrystalline silicon crystals corresponds to the temperature, ^^, the transistor of the product, or other semiconductor components s position. The remaining crystals are doped and thus processed, and then electrically connected to form an array of transistors—and other semiconductor components are deposited on a workpiece. The workpiece can then be fabricated into the desired electronic device, such as a suitable Adding the manufacturing steps of electronic components to form a flat display. The system reference figure illustrated above and 2 is a selective annealing layer 32 operating in a fixed pattern. This pattern is functionally related to the beam splitter 24 ' Or beam patterns output by reflective elements arranged spatially in the reflecting plate 28. For example, a two-degree spatial imaging module receives many beam outputs in one plane. A more detailed description is in US Patent Application No. 10 under review by Gross et al. / 170,212, the content of which is a multi-beam micromachining system and method, the disclosure is fully incorporated herein as a reference. However, it is known that transistors that make up an electronic device in the manufacture of thin film transistors are different from electronic devices. The design space and layout may not be fixed and fixed. In order to produce a crystal with a desired shape, A beam may need to be moved during annealing. Furthermore, the distance and layout between regions of the same electronic device may not be fixed and fixed. Now referring to FIG. 3, it is a substrate 200305915 (ίο) according to another embodiment of the present invention. A simplified illustration of a system 形成 that forms a silicon crystal on H2, such as a polycrystalline dream used on a glass substrate of a flat display type. The system seen in Figure 3 is especially used to adjust the formation of crystalline semiconductor deposits at different pitches The “Economy Bureau” can be selected from time to time. Moreover, the system 11 is implemented to adjust different spacings and layouts within the same electronic device, and different spacings and layouts can make individual designs of different electronic devices have characteristics. Ground, the system 110 can be used to anneal amorphous stones so that each of the resulting crystals has a selected shape. This is accomplished by controlling the positioning of the laser beam to anneal the debris deposited on the substrate 系统. The system 110 includes a laser control The laser 114 controlled by the unit 116. See Fig. 3 for a specific embodiment of the present invention. The laser 114 is combined with a pulse supply unit, such as a Q switch. The output-pulse laser beam 120. In the specific embodiment of FIG. 3, the beam 120 is first passed through an inverter 12 such as one or more non-linear crystals, and then passed through an optical system 122, such as a beam-shaping optical system, to impinge. On a beam splitter 124, the beam 120 is split into a plurality of secondary beams 126. It should be understood that the laser 114 can directly output a laser beam having a desired frequency so that a frequency converter 121 is not needed. It is further known that the secondary beam 126 may be any suitable The method provides, for example, a laser diode array. See the characteristics of the specific embodiment in FIG. 3, and the impact of the light beam 126 on an individual area on the substrate surface is selectable and controllable. Therefore, each time the beam I The appropriate angular direction leaves the beam splitter 12 so that the impact on the first reflecting plate 128 directs each light beam 126 to the opposite-direction controllable reflecting plate 150, which is in the array 152 of the reflecting plate 150. According to a specific embodiment of the present invention, the first reflecting plate includes a reflecting plate array element arranged in a two-degree space reflection.

The imaged component 9 is described, for example, in U.S. Patent Application No. 10 / 170,212, which is under review by Gross et al., And its content is a multi-beam micromachining system and method. The disclosure is fully incorporated herein by reference. See Figure 3 for a specific embodiment 9. The first reflecting plate 128 includes a plurality of directional reflecting elements 129 ', each of which is mapped to an opposite direction-controllable reflecting plate 150. An array of groups of which are positioned in the direction-controlling reflecting plate 150. ^ 5 in 2. As shown in the specific embodiment of FIG. 3, each direction-controllable reflecting plate 15 () includes a mirror 160, or other appropriate reflecting element, which is fixed on the positioner assembly 62 and includes a base 164, a mirror support 166, and An optional actuator 168 (the three shown are combined in a star arrangement), and a deflection spring (not shown) under the mirror i60. Each optional actuator 168 is, for example, a piezoelectric actuator, such as a TORQUE-BLOCK ™ actuator by Marco Systemanalyse und Entwicklung GmbH, Germany, which independently provides an upward and downward direction as shown by arrow m. The positioning is such that the mirror 160 is selectively positioned in a desired spatial direction to receive the primary beam 126 and direct the secondary beam to a desired area on the surface of the substrate U2. Although the directionally controlled reflecting plate 15 shown in the specific embodiment of FIG. 3 uses a piezoelectric actuator, it should be understood that any other suitable actuator may be used to provide the direction-selectable face mirror 160. These may include, for example, any suitable linear motor, MEMS or MOEMS device, or Digital Micromirror Device ™ from Texas Instruments. Each actuator 168 is operatively connected to a server 174 which is in turn connected to a computer and controlled by a computer controller 176. A computer file, such as CAM Data Building Case 178, contains a silicon crystal formed in a suitable area on the substrate 112.

Into the computer controller. The CAM data file 178 is used to determine the pitch and layout of the area to be annealed, and the individual spatial directions required for each mirror 160. The computer controller appropriately constructs a server to adjust the individual directions of the mirrors 160 in the array 152. According to a specific embodiment of the present invention, the beam splitter 124 is a variable deflection plate assembly such as an acousto-optic deflection plate (AOD). An Appropriate Beam Splitter details the US, Patent Application Serial No. 60 / 387,911 a Dynamic, Multi-Pass, Acousto-Optic Beam Splitter & Deflector (BSD) under review by Gross and Kotler, which disclosure is fully incorporated herein As a reference. As seen in Fig. 3, the beam splitter 124 includes a transducer 180 and a transparent crystal element 182 formed of quartz or other suitable crystalline material. The transducer 180 receives a control signal 184 and generates an acoustic wave 186, which is seen as a collection of plane waves that propagate through the crystal element 182. The control signal 184 is preferably an RF signal provided by an RF modulator 188, preferably by a direct digital generator (DDS) 190, or other suitable signal generator such as a voltage controlled resonator (VC0 )drive. Control of control signals, for example, can be provided by the computer controller 176, in response to the CAM data file 178, and selecting other inputs, such as sensory inputs. As is known in the art, the sound wave 186 is stored in the crystal element 182. When the light beam 120 hits it, the light beam 120 is deflected to an angle Θ which is a function of the frequency / of the sound wave 186, as follows: θ, ΔΛχΑ ^ η where: (13) (13) 200305915

λ = wavelength 120 of the beam 120, the speed of sound in the crystal element 182 can optionally provide a control signal 184 to cause the sound waves 186 to pass through the crystal element 182, or to cause the sound waves 186 to propagate at many different frequencies. In a specific embodiment of the present invention, acoustic waves are formed so as to have a plurality of different frequencies, so different frequency waves are formed in different local regions in the crystal element 182. Therefore, when the sound wave 186 propagates non-uniformly through the crystal element 182, the light beam 120 is divided into sub-beams 126 ', each of which is deflected to an angle ~ which is a function of the sound wave frequency of the sound wave 186 in a local area of the crystal element 182. The pulse contains a light beam 120 impinging on a crystal element 182. Reference is now made to FIG. 4, which is a simplified diagram of the control signal 184 used in the system of FIG. 3, and FIG. 5 is a simplified diagrammatic illustration of the acoustic wave 186 and how they affect the laser beam 120 used in the system of FIG. Therefore, as shown in FIG. 4, a control signal 184 has _multi-segments 192 'each having a corresponding frequency. As seen in FIG. 5, the sound wave 186 and the light beam 120 passing through the crystal element 182 divide the light beam 120 into a plurality of sub-beams 126 as a function of the number of segments 192 of the sound wave 186 and the deflection of the sub-beams 126—the angle is the same as the sound wave 186 of each segment 192 A function of frequency. Thus the segmentation of the light beam 120 into sub-beams is a function of the frequency of the acoustic wave 186, which is variable ' and is independent of the permanent physical segmentation in any crystal element 182. It should be known that the use of a variable deflector assembly, the beam splitter 124 in FIG. 3, enables the number of secondary beams 26 used in the annealing process to be controlled. Therefore, one method of adjusting the dose of laser beam energy supplied to the annealed silicon is to control the beam splitter 124 so that the beam 120 is divided into a larger or smaller number of secondary beams 126. And, the exact dose provided to each annealing zone can be introduced with (14) (14) 200305915

Λ? I want to condense ig ° 1 sound wave power control 5 as known in the art 5 for example to change the flow rate of 26 times. With many simultaneous laser beam micromachining-substrates, another aspect of the method is detailed in US Patent Application No. 212, under review by G. et al., Whose content is multi-beam micromachining ... The disclosure is fully incorporated herein by reference. Accurate energy control is important for lateral crystal growth. Using general lateral growth and special ultra-lateral growth to crystallize amorphous rhenium into polycrystalline rhenium, the precise temperature during melting is extremely important and can affect the quality of crystal breakage. Thus, for example, the progress of melting can be made by increasing the energy of the beam during melting, or by providing an initial burst of elevated energy followed by a light beam with a lower energy density. The energy density of one beam can be controlled as a function of the number of secondary beams 126 formed by the beam 120 output from the laser 114. Returning to Fig. 3, it can be seen that the angle expansion optical system 127 is inserted between the beam splitter 124 and the first reflection plate 128. It should be understood that when leaving the beam splitter 124 'when configured as an acousto-optic deflection plate, the individual angles of the secondary beams 126 are typically small and much smaller than the angles depicted in the figure. The reduction of the number of beams and the exaggerated angle shown in Fig. 3 are for the sake of simplicity and easy understanding of the general concept of the present invention. Typically, the number of secondary beams will be the same as, or similar to, the number of directional controllable reflectors 150 in the array 152, and the divergence angle will be quite small. However, when a higher energy density of the beam 126 is required, the beam splitter can be used. 124 outputs a smaller number of beams. Along the array 152 and below, the secondary beam passes through the increased optical system 13, including, for example, a focusing lens and a telecentric imaging lens, and impinges on the surface of the semiconductor precursor layer 132, such as an amorphous silicon film covering the substrate 2. According to 200305915

In a specific embodiment of the present invention, a controllable focusing lens can be provided for each light beam 126 and the need to operate a telecentric imaging lens to simultaneously image all light beams 126 can be eliminated. In the region 34 where each sub-beam 12 6 hits the semiconductor layer 4 2 on the body layer 13 2, the semiconductor precursor body layer 132 is heated, as shown in the figure by the heat wave 36. When the semiconductor precursor layer is formed of, for example, 'amorphous silicon, the process of heating and subsequent cooling forms a silicon crystal 38 (Fig. 1) on each region 34 impinged by the secondary beam 126. The process of forming a crushed crystal 38 (Figure 1) by heating and cooling is called annealing. According to a specific embodiment of the present invention, each sub-beam 126 impinges on the semiconductor precursor layer 132 of the separation region 34 so that each of the resulting crystals 38 is separated from the other crystals 38. A particular feature of the present invention is that the laser 114 used in the selective annealing layer 32 is a non-excimer pulse laser. The laser typically has a power output that is actually less than an excimer laser typically used in industrial applications such as semiconductor or flat panel manufacturing. As a result, the process of selectively annealing the semiconductor precursor layer 132, according to a specific embodiment of the present invention, actually directs the laser beam to those regions 34 where crystals 38 need to be formed, but not other regions. Furthermore, a direction-controllable reflector can be used to slightly shift the secondary beam 126 located between subsequent laser beam pulses to address approaching or contacting the previously-addressed area 34 to an adjacent area. This process can be used to grow larger crystals 38 as needed, or to form crystals with desired shapes. It is useful to form crystals having a desired shape, for example, in a maskless production operation and thus to remove amorphous silicon, for example, which has a faster etch rate than crystalline silicon. Typically, the crystal 38 is actually formed only in an electrical device that is to be removed from the substrate 200305915

112 Those areas needed to make the transistor, not others. The crystal generally occupies between 0, 1% = 5% of the surface of the substrate 112, and typically about 1% of the surface. Other aspects of the specific embodiment shown in FIG. 3 are generally described above with reference to FIG. 1, and its use in manufacturing thin film transistors and electronic devices is generally described above with reference to FIG. 2. Those skilled in the art will appreciate that the invention is not limited to what has been specifically shown and described above. It includes those skilled in the art who have studied the foregoing description and have made modifications and changes to the invention that are not in the prior art. Brief description of the drawings_ The present invention will be more fully appreciated and understood from the above description combined with the drawings, in which: FIG. 1 is a simplified schematic illustration of a system for selectively heating a substrate according to a specific embodiment of the present invention; FIG. 1 is a simplified flowchart of a method for forming a thin film transistor on a substrate by a system. 3 is a simplified diagram illustrating a system for selectively heating a substrate according to another embodiment of the present invention; FIG. 4 is a simplified diagram of a control signal used in the system of FIG. 3; FIG. 5 is a sound wave used in the system of FIG. A simplified graphical illustration of and its effect on the laser beam pulse. Symbols of the drawings 10, 110 System 12, 112 Substrate 14, 114 Laser 200305915 16, 116 Field control unit 18? 118 Pulse supply unit 209 120 Pulse laser beam 21, 121 Inverter 22, 30, 122 Optical system 24, 124 beam splitters 26, 126 secondary beams 28, 128 reflectors 30, 130 added optical systems 32, 132 semiconductor precursor layers 34 areas 36 heat waves 38 silicon crystals 127 angular expansion optics 129 directional reflector 150 direction controllable Reflector 152 Reflector Array 160 Mask 162 Positioner Assembly 164 Base 166 Mask Support 168 Optional Actuator 172 Arrow 174 Servo Controller

200305915 performance page, (18) 176 computer controller 178 CAD data file 180 transducer 182 transparent crystal unit 184 control signal 186 sound wave 188 RF modulator 190 direct digital generator 192 _ clip

Claims (1)

200305915 Patent application scope 1. A method for manufacturing a substrate with a thin film transistor, comprising: providing a substrate having a semiconductor precursor deposited on a surface thereof and transmitting a plurality of laser beams to the surface simultaneously The first plurality of non-continuous regions to heat the semiconductor precursors located in the discontinuous regions and the semiconductor precursors that are not actually heated in other regions. 2. The method of claim 1, wherein the providing step includes providing a substrate having an amorphous silicon layer deposited thereon. 3. The method according to item 1 of the patent application scope, wherein the transmitting a plurality of laser beams simultaneously includes generating a laser beam and dividing the laser beam into a plurality of sub-beams. 4. The method of claim 3, further comprising converting the frequency of the laser beam. 5. The method of claim 1 in the patent application range, wherein transmitting the plurality of laser beams includes causing the semiconductor precursor to undergo a change in a physical state in the discontinuous regions and not to undergo a change in a physical state in other regions . 6. The method according to item 1 of the patent application scope, wherein the transmitting a plurality of laser beams includes a semiconductor fused in the non-continuous areas and the semiconductor precursor not fused in other areas. 7. The method of claim 6 further comprising cooling the semiconductor precursor. 8. The method according to item 1 of the patent application, wherein the semiconductor precursor includes an amorphous silicon layer, and the transmitting a plurality of laser beams includes melting the amorphous silicon in the discontinuous regions and not melting in other Area of the child's amorphous stone eve 200305915 forebody. 9. For example, the method of claim 6 of the patent application scope further includes cooling the substrate to crystallize the amorphous stone in the first plurality of discontinuous regions. The method according to item 1 of the patent application park, wherein the simultaneous transmission includes simultaneously transmitting a plurality of laser beams to a discontinuous area independently selected by cocoa. 11. The method of claim 1 of the patent application park, further comprising: transmitting a plurality of laser beams to a second plurality of discontinuous areas on the surface simultaneously to heat the semiconductor precursor in the discontinuous areas. , And does not actually heat the semiconductor precursor in other regions. 12. The method of claim 11 in which the transmitting a plurality of laser beams to the second plurality of discontinuous regions includes transmitting the plurality of laser beams to an independently selectable discontinuous region simultaneously. 13. The method of claim 11 in which at least some of the second plurality of discontinuous areas are different from some of the plurality of discontinuous areas. 14. The method according to the scope of application for patent application, wherein certain areas of the first plurality of discontinuous areas are separated from each other by a first pitch, and wherein the plurality of laser beams are transmitted to the second plurality simultaneously The discontinuous regions include: transmitting the laser beam to the second plurality of discontinuous regions, which are separated from each other by a second pitch different from the first pitch. 15. The method according to item 1 of the patent application, wherein the semiconductor precursor includes amorphous stone and the transmission includes transmitting a plurality of laser beams, using heating and subsequent cooling to affect the physics from amorphous silicon to crystalline silicon Change of status 200305915 change. 16. The method of claim 1 in which the semiconductor precursor includes amorphous silicon and wherein the transmitting includes transmitting a plurality of laser beams, using heating and subsequent cooling to affect the physical state from amorphous silicon to polycrystalline silicon. change. 17. The method of claim 1, wherein the substrate having a thin film transistor includes a flat display substrate in manufacture. 18. The method of claim 1 further includes removing the portion of the semiconductor that is not subject to a change in physical state. 19. The method of claim 18, wherein the removing includes etching the substrate. 20. The method of claim 19, wherein the etching includes maskless etching. 21. The method of claim 1, wherein the transmitting the laser beam includes transmitting the laser beam to cause the semiconductor precursor located in the discontinuous regions to crystallize into a desired pre-etched crystallized structure, And further includes etching the substrate without a mask, and then the required pre-etched crystallized structure is constructed after the etching to generally form a post-etched crystallized structure in the discontinuous areas, and the etching removes the Semiconductor precursor. 22. A method of manufacturing a substrate with a thin film transistor, comprising: providing a substrate having a semiconductor precursor deposited thereon; annealing the semiconductor substrate in a plurality of discontinuous regions; and at least in the discontinuous regions Area, without mask, 200305915 23. The method of claim 22, wherein the providing includes providing a substrate having an amorphous silicon layer deposited thereon. twenty four. For example, the method of claim 23, wherein the annealing includes annealing amorphous silicon in discontinuous regions to form crystallized silicon thereon, and non-crystallizing the stone in regions other than the discontinuous regions. . 25. The method of claim 23, wherein the annealing includes annealing the amorphous stone in the discontinuous regions to form polycrystalline fragments thereon and the seconds in the regions in the discontinuous regions. Does not crystallize. 26. The method of claim 22, wherein the annealing includes simultaneously transmitting a plurality of laser beams to a first plurality of discontinuous regions. 27. The method of claim 26, wherein the annealing further comprises the subsequent simultaneous transmission of a plurality of laser beams to a second plurality of discontinuous regions different from the first plurality of discontinuous regions. 2 ». The method of claim 22, wherein the removing includes etching. 29. The method of claim 28, wherein the annealing includes crystallizing the silicon in a non-continuous area to form a desired pre-etched crystalline form, and removing includes removing at least the non-crystallized silicon to remain The lower silicon crystals on the substrate 'each silicon crystal has a desired post-etched form. 30 · A method of manufacturing a flat display, comprising: providing a flat display substrate having a semiconductor precursor deposited on a surface thereof; and simultaneously transmitting a plurality of laser beams to a first plurality of non-linear surfaces on the surface Continuous area to heat the semiconductor precursor located in the discontinuous areas 200305915 Body, and the semiconductor precursor that does not actually heat the other regions. 31. The method of claim 30, wherein the providing includes a substrate having a length of one for depositing an amorphous silicon layer thereon. 32. The method of claim 30, wherein transmitting the plurality of laser beams at the same time includes generating a laser beam and dividing the laser beam into a plurality of sub-beams. 33. If the method of claim 32, The method further includes converting the frequency characteristics of the laser beam. 34. The method of claim 30, wherein the transmitting the plurality of laser beams includes causing the semiconductor precursor to withstand a physical state in the discontinuous regions. Change, and do not withstand a change in physical state in other areas. 35. The method of item 30 of the patent application, wherein the transmitting a plurality of laser beams includes semiconductors fused in these discontinuous areas and non-fused in other areas. 36. The method of claim 35, further comprising cooling the semiconductor precursor. 37. The method of claim 30, wherein the semiconductor precursor comprises an amorphous silicon Layers and transmitting a plurality of laser beams include amorphous silicon fused in these discontinuous regions and the amorphous silicon not fused in other regions The precursor of silicon. 38 'The method of claim 35 of the patent patent garden, further comprising cooling the substrate to crystallize the amorphous silicon in the first plurality of discontinuous regions. The method of item, wherein the simultaneous transmission includes 200305915 Simultaneously transmit a plurality of laser beams to a discontinuous area that can be independently selected. 4 (λ The method according to item 30 of the patent application scope, further comprising: transmitting a plurality of laser beams to a second plurality of discontinuous areas on the surface at the same time, so as to cause the semiconductor precursor to be in the second plurality of The discontinuous area is subject to a change in physical state, and it is not subject to a change in its physical state in other areas. 41 The method of claim 40, wherein the transmitting a plurality of laser beams to the second plurality of discontinuities The area includes transmitting a plurality of laser beams to a discontinuous area that can be independently selected at the same time. 42 The method according to item 40 of the patent application range, wherein at least some of the second plurality of non-continuous areas are different from the area Wait for some areas of the first plurality of discontinuous areas. 43. For example, the method of claim 40 in the patent application range, wherein some areas of the first plurality of discontinuous areas are separated from each other by a first interval, and the simultaneous transmission The plurality of laser beams to the second plurality of discontinuous regions include: transmitting the laser beam to the second plurality of discontinuous regions, which differs in different ways. The second pitch is separated from each other at the first pitch. 44_ The method of claim 30 in the patent application range, wherein the semiconductor precursor includes amorphous silicon and wherein the transmitting includes transmitting a plurality of laser beams to affect the amorphous The change of physical state from silicon to crystalline silicon. 45'Methods such as the 30th item of the patent scope ', in which the semiconductor precursor package 7 amorphous silicon and the transmission therein include transmitting a plurality of laser beams, so as to affect Changes in the physical state from crystal seconds to polycrystalline stones. 46. For example, the method of claim 30, wherein the flat display includes a liquid crystal diode display. 47. For example, the method 9 of the scope of patent application No. 30 further includes removing a substantially unheated portion of the semiconductor precursor. 48. The method of claim 47, wherein the removing includes etching the substrate. 49. The method of claim 48, wherein the etching includes maskless etching. 50. The method of claim 30, wherein transmitting the laser beam includes transmitting the laser beam to cause the semiconductor precursor to crystallize into a required pre-etched crystallized structure in the discontinuous areas, and It further includes etching the substrate without a mask, and then the required pre-etched crystallized structure is constructed to form a post-etched crystallized structure generally in the discontinuous regions, and the etching removes the semiconductor from other regions. Forebody. 51 · A kind of flat display substrate is manufactured by a method, including: providing a substrate with an amorphous silicon layer thereon; · selectively annealing the portion of the amorphous stone with a plurality of independently positionable Thai beams. In order to form a discontinuous polycrystalline polycrystalline deposit, remove the unannealed portion of the amorphous silicon, and separate the crystals in the selected space. A system for manufacturing a thin-film transistor and a multiple-beam laser processor. A system for forming a thin-film electrical substrate on a crystal deposit, including: a substrate for receiving a semiconductor having a semiconductor 52. 200305915 ^ Element, the substrate on the surface, and the multi-beam laser processor, simultaneously transmitting a plurality of laser beams to the surface of the first plurality of discontinuous regions 以 to heat the semiconductor precursor on it, And does not actually heat the semiconductor precursor in other regions. ^, The system for quoting Fanyuan Item 52, wherein the multiple beam laser positioner includes-a beam positioner for combining each laser beam of the laser beams to transmit a plurality of laser beams to Independently selected discontinuous regions. The system of item 52 of Shishen's patent scope, wherein the multi-beam laser processor includes a laser for outputting a first laser beam, and a beam splitter located downstream of Θ field beam, the beam splitter It operates to split the first adaptive beam into a plurality of laser beams. 55. The system of claim 52, further comprising a control benefit, which operates to selectively reposition at least some of the beam positioners to transmit the plurality of laser beams to a second plurality of discontinuous regions. 56. The system of claim 55, wherein some of the plurality of regions are separated from each other by a first pitch, and at least some of the second plurality of regions are separated from each other by a first pitch. The two pitches are separated from each other. 57 · —A system for manufacturing a thin film transistor array, comprising: at least one laser source for outputting at least two pulsed laser beams; at least one laser beam positioner for receiving the at least two laser beams Beam and directing these at least two laser beams to impinge on amorphous 200305915 Discontinuous areas on the surface of the semiconductor precursor are heated to heat the amorphous semiconductor precursor thereon, and the semiconductor precursor is not actually heated in other areas. 58. For example, the system of claim 57 wherein the laser source includes a non-excimer laser. 59. The system of claim 57 in which the average power of the laser beam source is less than 50W. 60. The system according to item 57 of the patent application, wherein a pulse reproduction rate of the laser beam source is greater than about 5 KHz. 61. The system of claim 57 in which the laser beam source includes a laser, a beam splitter located downstream of the laser, and the beam splitter operates to separate the first laser beam into at least two Laser beams. 62. For example, the system of claim 57 in which the at least two laser beam positioners operate independently to position the at least two laser beams, and each laser beam is positioned in an independently selectable area. 63. The system according to item 57 of the patent application, wherein some areas of the discontinuous areas are separated by a first distance and include: · a controller · a shoulder device · which operates to guide the at least two lasers Beam to