TH54221A - A fast device using a spiral - Google Patents

Abstract

DC60 (20/06/45) Reactive devices have either a helical or a ribbon geometry. Helical geometry consists of single-helical and multi-helical devices. Single-helical devices have a central core which may be made of different materials depending on whether the reactive device responds to electrical, optical, mechanical, thermal, or chemical energy. Single-helical reactive devices include FETs, photoelectric devices, channel transducers, and similar devices. The reactive material used in a single-helical device is a layer around the core of the helical helix. For multi-helical devices, the semiconductor material can be a layer on one or more helical helixes or on a stretchable material placed between two helical helixes. For example, a FET forms three helical helixes, one of which carries the gate insulator and semiconductor layer, and the other two are conductive helixes that act as source and drain. The base layer or helical helix, if desired, should be flexible and able to form a lattice structure. Reactive devices (RVPs) can have either a helical or a ribbon geometry. Helical geometry comprises single-helical and multi-helical devices. Single-helical devices have a central core, which may be made of different materials depending on whether the RVP responds to electrical, light, mechanical, thermal, or chemical energy. Single-helical RVPs include FETs, photoelectric devices, channel transducers, and similar devices. For single-helical devices, the semiconductor material is layered around the core of the helix. For multi-helical devices, the semiconductor material can be layered on one or more helixes or on a stretchable material placed between two helixes. For example, a FET is formed into three helixes, one of which carries the gate insulator and semiconductor layer, and the remaining two helixes are conductive and act as source and drain. Ideally, the base layer or spiral should be flexible and able to form a lattice structure.

Claims (61)

1. A flexible device consists of a helix, a semiconductor material stretched along the axis of the helix, and a first and second electrical conductor, also stretched along the axis of the helix and arranged to be electrically connected at a distance between them from the semiconductor material such that the impedance between the first and second electrical conductors is changed by the energy applied to the helix. 2. A responsive device of claim 1 where the helix has a central core and where the semiconductor material is the layer surrounding that central core. 3. The responsive device of claim 2, whereby the core is an optical fiber. 4. A responsive device of claim 2, where the core is a piezoelectric material. 5. The subsequent device of the second claim consists of a layer of insulating material placed between the said core and the said semiconductor layer, and where the said core and the first and second conductors are the gate, source and drain of the field-effect transistor. 6. The responsive device of claim 1, where the said helix is the first helix of another helix, and the first and second conductors are the second and third helixes of the said helix. 7. The responsive device of claim 6, where the first strand is an optical fiber. 8. The responsive device of claim 6, whereby the first thread consists of an electrically conductive core and whereby a layer of electrically insulating material is placed on such core. 9. The responsive device of claim 8, whereby the said semiconductor material is a layer placed on a layer of the said electrical insulating material. 10. The agile device of claim 8, whereby the fourth helix of such numerous helixes is extended along the axis of the first helix. 11. The quick device of claim 10, where the fourth thread, which is a layer of insulating material, is inserted between the second and third threads. 12. The responsive device of claim 10, whereby the fourth thread consists of an electrically conductive core and layers of electrically insulating material placed on top of that core. 13. A responsive device to claim 10 whereby an alternative semiconductor layer is placed on the electrically insulating layer of the fourth helix. 14. The subsequent reactive device of claim 6 consists of the first and second junction objects, which have the capability of increasing the carrier and extending axially along the first helix, where the first junction object is placed between and positioned at the electrical junction of the said semiconductor object and the second helix, and where the second junction object is placed between and positioned at the electrical junction of the said semiconductor object and the third helix. 15. The quick-release device of claim 14, where the second and third threads are essentially composed of the first and second central shafts, and where the first and second connecting objects are essentially placed on the first and second central shafts. 16. The agile devices of claim 14, where the first and second connecting objects are the fourth and fifth threads of the said numerous threads. 17. A responsive device to claim 1, whereby such semiconductor consists of organic semiconductor material. 18. A responsive device to claim 17 where the organic material is a component of a group consisting of small semiconductor molecules, oligomers and polymers. 19. The responsive device of claim 17, where the organic material is a group composition consisting of pentazine, oligothiophene, and polythiophene. 20. A responsive device of claim 1, whereby such semiconductor material consists of a hybrid of organic/inorganic semiconductor materials. 21. The responsive device of claim 20, whereby the organic/inorganic semiconductor material is phenylammonium tin iodide. 22. A highly responsive device of claim 2, whereby its core consists of one or more long fibers. 23. The responsive device of claim 22, where one or more such long fibers are conductive long fibers. 24. A flexible device of claim 1, whereby the said thread is flexible. 25. The quick-release device of claim 6, where the numerous threads make up a pair. 26. The subsequent quick-release device of claim 6 comprises a method for securing the numerous aforementioned threads together. 27. A responsive device of claim 6 where the current flows in a direction consisting of such semiconductor material and the second and third helixes. 28. A responsive device of Claim 1, whereby the said core is electrically conductive. 29. A field-effect transistor consists of a helical axis with a conductive core and layers of electrical insulation arranged along the axis of the core. Semiconductor material extends along the axis of the core and is placed adjacent to the insulation layers. A first and second conductor extends along the axis of the core and is placed at electrical junctions with the semiconductor material at distances between them, where the electrical impedance between the first and second conductors changes according to the power applied to the conductive core. 30. A field-effect transistor of claim 29, where the said helix is the first helix of a multitude of helixes, where the first helix is the gate with the said electrical insulation layer placed on those cores, where the second and third helixes consist of the said first and second electrical conductors respectively, and where the said second and third helixes are the said source and drain respectively. 31. A field-effect transistor of claim 30, where at least one of those many such helixes is flexible. 32. A field-effect transistor of claim 30, where the numerous helixes are paired within a group, and where the group is flexible. 33. A field-effect transistor of claim 30, where the said semiconductor consists of organic semiconductor material. 34. Field-effect transistor of claim 33, where the organic semiconductor material is a component of a group consisting of small semiconductor molecules, oligomers, and polymers. 35. The responsive device of claim 33, where the organic material is a group composition consisting of pentazine, oligothiophene, and polythiophene. 36. A responsive device to claim 29 where the semiconductor material consists of a hybrid of organic/inorganic semiconductor materials. 37. A responsive device to claim 36 where the hybrid of organic/inorganic semiconductor materials is phenyl ammonium tin iodide. 38. A field-effect transistor of claim 29, where the core consists of one or more long filaments. 39. A field-effect transistor of claim 38, where one or more filaments are conductive filaments. 40. A field-effect transistor of claim 30, where the current flows in a path consisting of the aforementioned semiconductor material and the aforementioned second and third helixes. 41. An electrical circuit consists of numerous strands and at least one semiconductor material, where these strands form a reactive device that electrically connects two or more different devices. 42. The electrical circuit of claim 41, where the said semiconductor is arranged along the axis of the first multi-strand helix and where the second and third multi-strand helix are electrically conductive. 43. The electrical circuit of claim 42, where the said semiconductor is the first semiconductor, where the second semiconductor is arranged along the axis of the fourth helix, and where one semiconductor strand of the second and third helixes is the electrical junction with the two said semiconductors. 44. The electrical circuit of claim 42, where such semiconductor is a semiconductor extended along the axis of the first helix of those numerous helixes, and where a second semiconductor is arranged along the axis of the second numerous helixes, where each such helix consists of at least an electrical conductor extended along the axis of those helixes, and where the first and second helixes consist of two or more sensitive devices. 45. A highly reactive device, composed of a semiconductor material, consists of the first and second electrodes, which are positioned at a distance from each other at a separate location at the electrical junction with the said semiconductor material, and a truly planar and flexible base layer, which consists of the said first and second carrier electrodes and the said semiconductor material. 46. The next responsive device of claim 45 consists of a gate electrode and a gate insulator, where the said flexible base layer is typically the carrier of the said gate electrode and gate insulator. 47. A responsive device of claim 45 where such semiconductor is an organic semiconductor and where such organic semiconductor is a component of a group consisting of small semiconductor molecules, oligomers and polymers. 48. A responsive device to claim 45 whereby such semiconductor material consists of organic semiconductors and whereby such organic semiconductor material is a component of a group consisting of pentazine, oligothiophene and polythiophene. 49. A responsive device to claim 45 whereby such semiconductor material consists of a hybrid of organic/inorganic semiconductor materials. 50. The responsive device of claim 49, whereby the organic/inorganic semiconductor hybrid material is phenyl ammonium tin iodide. 51. The flexible device of claim 46, whereby the said flexible base layer is a group of components consisting of a metal, a conductive polymer and a polymer coated with a conductive material. 52. The next sensitive device of claim 45 consists of a light-transmitting material, that is, it is typically carried by such a flexible base layer. 53. A responsive device of claim 45, where the said flexible base layer is a light-transmitting material. 54. A structure composed of numerous helical strands, where at least some of these strands form a reactive device that exhibits changes in electrical impedance with the intent to alter energy. 55. The framework of claim 54, whereby the energy is electrical energy. 56. The framework of claim 54, whereby the energy is solar energy. 57. The framework of claim 54, where the energy is mechanical energy. 58. The framework of claim 54, whereby the said agile device is formed by numerous helixes of the first, second and third types. 59. The framework of claim 58, subsequently, consists of a semiconductor material extended along the axis of the first helix and placed between the second and third helixes. 60. The framework of claim 59, where the said active device is the first active device, where the second active device forms the said fourth and fifth numerous helixes, and where the said second and third helixes, and where another semiconductor material extends along the axis of the said fourth helix. 61. The field-effect transistor of claim 32 next in line consists of an enclosure of electrically insulating material in which a group of such materials is arranged within the said enclosure.