SU85196A1 - Method for high-frequency heating of conducting bodies, semiconductors and dielectrics - Google Patents
Method for high-frequency heating of conducting bodies, semiconductors and dielectricsInfo
- Publication number
- SU85196A1 SU85196A1 SU374094A SU374094A SU85196A1 SU 85196 A1 SU85196 A1 SU 85196A1 SU 374094 A SU374094 A SU 374094A SU 374094 A SU374094 A SU 374094A SU 85196 A1 SU85196 A1 SU 85196A1
- Authority
- SU
- USSR - Soviet Union
- Prior art keywords
- dielectrics
- semiconductors
- frequency heating
- conducting bodies
- heating
- Prior art date
Links
Landscapes
- Constitution Of High-Frequency Heating (AREA)
- Control Of High-Frequency Heating Circuits (AREA)
Description
Способы высокочастотного нагрева электрических проводников, полупроводников и диэлектриков известны.Methods for high-frequency heating of electrical conductors, semiconductors, and dielectrics are known.
При нагреве токами высокой частоты в магнитном поле невозможно нагревать издели на значительном рассто ннн от индуктора, так как напр женность магнитного пол уже на очень небольшом рассто нии от индуктора составл ет ничтожную долю напр женности нол вблизи индуктора. Вследствие этого возникают большие неудобства п затруднени при нагреве тел сложной конфигурации.When heated by high-frequency currents in a magnetic field, it is impossible to heat the product at a considerable distance from the inductor, since the magnetic field strength, even at a very small distance from the inductor, is an insignificant fraction of the intensity nol near the inductor. As a result, great inconveniences and difficulties are encountered when heating bodies of complex configuration.
При нагреве токами высокой частоты в электрическом поле весьма затруднительно сосредоточить нагрев в нужных част х диэлектрика, особенно в том случае, если дл помещени электрода доступна только одна сторона нагреваемого предмета.When heated by high-frequency currents in an electric field, it is very difficult to concentrate the heating in the desired parts of the dielectric, especially if only one side of the heated object is available for the electrode.
С целью устранени указанных неудобств и затрупнений нри осуществлении высокочастотного нагрева проводников, полупроводников и диэлектриков, предлагают использовать, дл переноса энергии в нагреваемые предметы, электромагнитное излучение от соответствующего высокочастотного генератора.In order to eliminate these inconveniences and bruises in the implementation of high-frequency heating of conductors, semiconductors and dielectrics, it is proposed to use electromagnetic radiation from the corresponding high-frequency generator to transfer energy into heated objects.
Длину волны выбирают одного пор дка с поперечными размерами нагреваемой поверхности.The wavelength is chosen in one order with the transverse dimensions of the heated surface.
Направление передающего энергию луча и сосредоточение его в зоне нагрева достигают при помощи установки зеркал, линз и других средств, примен емых в радиолокационных установках. Так как современные генераторы высокой частоты, например магнетроны, не обладают достаточными мощност ми дл нагрева с помощью электромагнитного излучени , то на нагреваемую поверхность одновременно направл ют лучи от нескольких генераторов высокой частоты.The direction of the energy transmitting beam and its concentration in the heating zone are achieved by installing mirrors, lenses and other means used in radar installations. Since modern high frequency generators, such as magnetrons, do not have sufficient power to heat using electromagnetic radiation, beams from several high frequency generators are simultaneously directed to the heated surface.
Дл повыщени к. п. д. электромагнитного излучени при нагреве полупроводников и диэлектриков и уменьщени потери энергии, вследствие более глубокого проникновени ее, чем предусмотрено технолоTo increase the efficiency of electromagnetic radiation when heating semiconductors and dielectrics and to reduce energy loss due to its deeper penetration than provided by technology
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| SU374094A SU85196A1 (en) | 1948-02-10 | 1948-02-10 | Method for high-frequency heating of conducting bodies, semiconductors and dielectrics |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| SU374094A SU85196A1 (en) | 1948-02-10 | 1948-02-10 | Method for high-frequency heating of conducting bodies, semiconductors and dielectrics |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SU374100 Division |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| SU85196A1 true SU85196A1 (en) | 1949-11-30 |
Family
ID=48257668
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SU374094A SU85196A1 (en) | 1948-02-10 | 1948-02-10 | Method for high-frequency heating of conducting bodies, semiconductors and dielectrics |
Country Status (1)
| Country | Link |
|---|---|
| SU (1) | SU85196A1 (en) |
-
1948
- 1948-02-10 SU SU374094A patent/SU85196A1/en active
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