SU842960A1 - Shift register - Google Patents

Description

(54) SHIFT REGISTER

The invention relates to computing, in particular, to storage devices of high density, made on a thin magnetic film and using flat magnetic domains as a data carrier.

Shift registers on flat magnetic domains are known, in which the promotion of domains occurs by the action of a magnetic field of an electric current in systems of conductors 1 and 2.

The disadvantages of such devices are the need for two layers of advancement conductors and low information density due to the rather large size of the domains.

The disadvantages are eliminated in the shift registers on flat magnetic domains, in which magnetic-rigid applications are used, crossing the channels and therefore forming an additional magnetic layer deposited on the insulating layer, which covers the magnetic film. Magnetic braces create static magnetic fields that allow only one layer of conductors to be used for promotion.

having a meander-like appearance, and reduce the size of the domains due to the supporting static magnetic field of m.

The disadvantage of the register of this design is its complexity, associated with the presence of an additional magnetic layer of magnetic-rigid applications over the channels. The purpose of the invention is to simplify the shift register.

This goal is achieved by the fact that

a shift register containing a thin ferromagnetic film with low-coercive channels for advancing flat magnetic domains, on which an insulating layer with conductors deposited on it is located, and ferromagnetic applications, are made in a thin ferromagnetic film and are located between low-coercive channels for advancing flat magnetic domains symmetrically with respect to the latter.

Moreover, the mentioned ferromagnetic

Claims (2)

the applications are made of either a hard magnetic or a magnetizing soft material. FIG. 1 schematically shows the shift register, section; in fig. 2 - position of the domain in the shift register during one clock cycle. The proposed shift register (Fig. 1) contains a dielectric substrate 1, on which a uniform magnetic layer is applied, in which low-coercive channels 2 are formed, a high-coercive array 3 and ferromagnetic applications 4-7. An insulating layer 8 and a layer of conductors 9 are deposited on the magnetic layer. In addition, the shift register contains domains 10-14 (Fig. 2). Promotional conductors pass over applications 4-7 (Fig. 2), which have, for example, the appearance of strips. The applications 4-7 are located asymmetrically with respect to the conductors 9. The low-coercivity channels 2 are located between the applications at an equal distance from their edges. The direction of magnetization in the applications is opposite to the direction of magnetization of domains 10-14. In the case of magnetic-hard applications, the demagnetizing fields from applications created by magnetic charges on the edges of the strips create a supporting magnetic field in the low-coercive channel region, where the domain 10 is located, which helps keep the domain, and erasing the magnetic field in the low-coercive channel regions located between applications 4 and 5, 6 and 7. In areas of channels where there is an erasing magnetic field, a domain cannot exist without an external field created by the advancement conductor. At the beginning of the cycle, domain 10 is in the region of the supporting magnetic field created by applications 4-7. When advancement 9 is supplied to the conductor by a current of such polarity that the current in the splint passing over the applications 4 and 5 creates a propulsive field for domain 10, the domain overcomes the erasing field from applications 6 and 7 and propagates until the total magnetic field from the conductor of advancement and erasing the floor from the following applications will be greater than the floor of the start of the domain top. After the termination of the magnetic field from the advancement conductor, the erasing field from ferromagnetic applications 6 and 7 breaks domain 11 into two domains 12 and 13. Domain 12 collapses because it renders unstable due to its small size, and domain 14 remains. Thus, a domain shift occurs by half a point. Giving a polarity current pulse. opposite to the original, one can achieve a domain shift by a period. In the case of magnetically soft applications, the difference in operation from the version with magnetic applications is that magnetically soft applications in the absence of a field created by the advancement conductor are magnetized parallel to the array and re-magnetized during the action of current pulses in the conductor. Thus, with the same principle of operation as that of the known register, the proposed one is much simpler structurally and more technologically in production due to the absence of a layer of magnetic-rigid applications over the channels. Claim 1. Shear register containing a thin ferromagnetic film with low-coercive channels for advancing flat magnetic domains, on which an insulating layer with conductors deposited on it is located, and ferromagnetic applications, characterized in that in order to simplify the shift register, ferromagnetic applications are made in thin the ferromagnet is a hey film and located between the low-coercive channels for the advancement of flat magnetic domains symmetrically with respect to the latter. 2. A register according to claim 1, characterized in that the ferromagnetic applications are made of a magnetic material. 3. Register according to claim 1, characterized in that the ferromagnetic applications are made of magnetically soft material. Sources of information taken into account during the examination 1. “Jour. Appl. Phys., 1966, No. 7, v. 37, p. 2584. 2.IEEE Trans. Maqn., 1977, No. 5, v. MAG13, (prototype).