SU819857A1

SU819857A1 - Method of cleaning semiconductor surface

Info

Publication number: SU819857A1
Application number: SU772535831A
Authority: SU
Inventors: Анатолий Иванович Бажин; Евгений Матвеевич Малиненко
Original assignee: Донецкий государственный университет
Priority date: 1977-10-21
Filing date: 1977-10-21
Publication date: 1981-04-07

Description

(54) СПОСОБ ОЧИСТКИ ПОВЕРХНОСТИ ПОЛУПРОВОДНИКОВ(54) METHOD FOR CLEANING THE SURFACE OF SEMICONDUCTORS

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Изобретение относитс к способам очистки поверхности полупроводников с целью удалени примесей с поверхности и приповерхностного сло и может быть использовано в полупроводниковой технике, в физическом эксперименте, дл получени чистых каталитических поверхностей.The invention relates to methods for cleaning the surface of semiconductors in order to remove impurities from the surface and the surface layer and can be used in semiconductor technology, in a physical experiment, to obtain clean catalytic surfaces.

Известен способ очистки поверхности полупроводников путем выдержки образца в высоком вакууме (10 торр) при температуре до 1000°С дл различных материалов 1. Этот способ применим только дл веществ с высокой температурой плавлени .The known method of cleaning the surface of semiconductors by holding the sample under high vacuum (10 Torr) at temperatures up to 1000 ° C for various materials 1. This method is applicable only to substances with a high melting point.

Наиболее близким по технической сущности и достигаемому эффекту вл етс спЬсоб очистки поверхности полупроводников , включающий обработку очищаемой поверхности потоком частиц, а именно путем бомбардировки этой поверхности ионами инертных газов в сверхвысоком вакууме с последующим отжигом 2.The closest in technical essence and the achieved effect is the semiconductor surface cleaning, including the treatment of the surface being cleaned with a stream of particles, namely by bombarding this surface with ions of inert gases in ultrahigh vacuum, followed by annealing 2.

При такой очистке поверхность кристалла подвергаетс бомбардировке ионами аргона с энергией в сотни электронвольт. При плотности тока 0,1 мА/см с поверхности удал етс за секунду до одного моносло атомов окисных соединений, а затем и самоГО вещества полупроводника. Череду такие бомбардировки с отжигом образца в сверхвысоком вакууме, необходимы дл удалени агЬмов аргона, внедренных в рещетку, и .залечивани вызванных бомбардировкой дефектов, можно получить атомарно-чистую поверхность полупроводника (15-20 циклов бомбардировка-обжиг).With such cleaning, the crystal surface is bombarded with argon ions with an energy of hundreds of electron volts. At a current density of 0.1 mA / cm, a single monolayer of atoms of oxide compounds is removed from the surface per second, and then the semiconductor material itself. A series of such bombardments with sample annealing in ultrahigh vacuum, which are necessary to remove argon particles embedded in the grate and heal the defects caused by bombardment, it is possible to obtain an atomically clean semiconductor surface (15-20 bombardment – calcining cycles).

К недостаткам этого метода следует отнести нарущение структуры приповерхностного сло , использование сверхвысокого вакуума, применение высоковольтной аппаратуры .The disadvantages of this method include the violation of the structure of the surface layer, the use of ultrahigh vacuum, the use of high-voltage equipment.

Целью изобретени вл етс упрощение процесса очистки поверхности полупроводника и сокращение времени процесса.The aim of the invention is to simplify the process of cleaning the surface of a semiconductor and reduce the process time.

Поставленна цель достигаетс тем, что поверхность нагревают до 100-200°С и обрабатывают потоком атомарного водорода с парциальным давлением 10 - lO торр.The goal is achieved by the fact that the surface is heated to 100–200 ° C and treated with a stream of atomic hydrogen with a partial pressure of 10-lO Torr.

На чертеже изображено устройство дл реализации способа.The drawing shows a device for implementing the method.

Устройство содержит вакуумную камеру 1, трубку Вуда 2, генератор высокой частоты 3.The device contains a vacuum chamber 1, a Wood tube 2, a high frequency generator 3.

Claims

Atomic beams of hydrogen are preformed using, for example, a high-frequency discharge. Cleaning the surface of a semiconductor using an atomic beam proceeds in two ways. When hydrogen atoms interact with the surface, their adsorption and recombination into molecules occurs. In this case, energy is released that is sufficient to remove impurities with high binding energy, for example OH, whereas with the help of molecular beams of hydrogen, the removal of OH is not achieved. Example. Sample 4 is placed in a vacuum chamber, which is pumped to a pressure of 10 Torr. When the pressure of hydrogen in the torr discharge tube, the power of the RF discharge generator 40 W at a distance of 30 cm, creates a stream of hydrogen atoms 10 At 120 ° C, the sample of germanium face (Ø) removes contaminants (oxides, water, hydroxyl groups). , oxygen, products of chemical etching) with a speed of 20 A / min. The use of the proposed method ensures "soft cleaning of the surface without the formation of radiation defects, but only only due to the transfer of recombination energy and the release of heat of adsorption in an elementary act of interaction of atoms with the surface. The method is quite simple, with its implementation there is no need to use high-voltage equipment and ultra-high vacuum. The method is technological, the removal of the contaminated layer occurs more intensively (approximately five times as compared with the treatment with an ion beam). Using the proposed method, cleaning of the surfaces of germanium, silicon, zinc oxide, zinc sulfide, and alumina is most effective. Claims The method of cleaning the surface of semiconductors, including heating the surface to be cleaned and treating it with a gas stream, is characterized in that, in order to simplify the process of cleaning the surface of a semiconductor and shorten the process time, the surface is heated to a temperature of 100-200 ° C and treated with a stream of atomic hydrogen with partial pressure Yu - torr. Sources of information, taken into account in the examination 1. Mak-Daniel I. Collision processes in ionized gases, M., “The World 1967, p. 762.

2. Pleshchivtsev N. V. Cathodic sputtering. M., Atomizdat, 1968, p. 231-233 (prototype).