SU803012A1 - Storage cell - Google Patents

Description

The invention relates to the field of computer technology and can be used in the construction of high-speed operational memory and operational devices with galvano magnetic information reading organized on the basis of uniaxial materials with cylindrical magnetic domains (CMD). The known cell is a cell containing a magnetically uniaxial film, on the surface of which there are logical elements magnetically connected with the current bus 1. The disadvantage of this memory cell is its relative complexity. The closest technical solution to the invention is a cell that contains, like the proposed magnetically uniaxial film, on the surface of which there is a dynamic CMD trap and main current bus, the magnet is connected to one of the outputs of the dynamic trap 2. A disadvantage of the known memory cell is low functional stability, due to the significant dependence of the interaction forces between the CMD, stored in a dynamic trap and arriving at its entrance. As is known, the magnitude of the CMD interaction forces is directly proportional to the fourth power of the domain diameter and inversely proportional to the fourth power of the distance between them, resulting in a slight decrease in the diameter of the CMD significantly reduces the strength of the interaction of the domains and may lead to the transformation of functions performed by the memory cell. The aim of the invention is to increase the reliability of the storage cell. This goal is achieved by the fact that the proposed cell contains an additional current bus, which is magnetically coupled to the input of a dynamic trap, which is made in the form of a disk-shaped ferromagnetic application. A schematic diagram of the proposed storage cells shown in the drawing. The memory cell contains a magnetically uniaxial film 1 with CMD 2, on the surface of which there is a dynamic trap 3, made in the form of a disk-shaped ferromagnetic

applications and two outputs 4 and 5 and one input. main current bus 7, magnetically with output 4 of dynamic trap 3, and additional current bus DTSH 8, magnetowired with input b of dynamic trap 3.

The proposed memory cell functions as follows.

Information is output from the dynamic trap of the memory cell due to the excitation of the main current bus 7 at the appropriate point in time, which leads to the appearance of stored information at the output and the dynamic trap. Writing to a pre-cleaned dynamic trap is done by entering an informational CMD to the input b of a dynamic trap, where it is captured by a deep magnetostatic disk-shaped trap of the dynamic trap in the additional current bus 8. In this case, the pulse signal is not supplied

Stop the process of recording information in a previously unpurified dynamic trap. Suppose that a logical variable Y was previously stored in a dynamic trap, and a logical variable X is fed to the input of the memory cell. Consider possible combinations of variable values Hi Y.

At X Y 1, the CMD variable X, having experienced the repulsive effect of the CMD Y, deviates at the output 5 of the dynamic trap, realizing the single value of the first switching function (PL).

In the dynamic trap, independent of the state of the additional current bus 8 is the CMD implementing the single value of the second switching function (FF}). At position 9, at this point, the CMD does not appear, which corresponds to the zero value of the third switching function (PF,).

At X 1, Y О, the CMD variable X is fed to the input b of the dynamic trap and depending on the state of the additional current bus 8 is captured by the dynamic trap (the additional current bus 8 is not excited), realizing the single value of the second switching function and the zero value of the third switching function, or arrives at position 9 of the storage cell (a pulse signal is supplied to the additional current bus 8), which corresponds to the zero value of the second switching function and the single value of the third switch th function. Regardless of the state of the additional current bus 8 at the output 5 of the dynamic trap, the first switching function assumes a zero value.

The case X O, Y 1 or Y O corresponds to the mode of information storage. The values taken by the switching functions in this case are the following: the first is zero, the second is Y, the third is zero.

The obtained values of switching functions depending on the combination of input variables are tabulated.

Bus 8 X

PF,

PF

PF,

From which it follows that regardless of the condition of the tire 8, the first

the switching function is a conjunction, the second additional function with the unexcited bus 8 corresponds to the switching function of Disjunction, and with the excited

bus - switching function

The variable V, the third switching function in the absence of a pulse signal on bus 8 is the switching function. Constant O, otherwise the switching function Disable Y.

An increase in the reliability of the proposed storage cell is achieved by increasing the size of one of the interacting CMDs, namely, being in a dynamic trap.

Claims (2)

1. US Patent No. 4059829, cl. 340-174, 1977 2. USSR author's certificate number 627540, cl. G 11 C 11/14, 1977 (prototype).