SU746725A1 - Storage - Google Patents

Description

The invention relates to computing and can be used in the construction of microminiature devices, which require the storage of discrete information represented by more than two levels.

Known storage devices (34) containing a plate of fernets. an electrical material with piezoelectric properties in a polarized state, with an electrode system applied on its Opposite sides.

One of the known chargers contains a plate of ferroelectric triplets, and excitation electrodes and output electrodes l are located on different sides of the Xctbra.

The disadvantage of memory is the ability to store only two discrete levels of information.

The closest technical solution to the proposed is a memory containing a ferroelectric plate,

possessing piezoelectric properties in a polarized state, on one side of which there is a first excitation electrode and recording electrodes, on the other side of the plate against nef. second excitation electrode and output electrodes 2 are located at the second excitation electrode,

A disadvantage of the known device is the ability to store information,

10 is represented by only two discrete levels, which prevents the use of this device in multistable digital systems and limits its information capacity.

15

The aim of the invention is to increase the information capacity of a known memory device.

The goal is achieved by the fact that the memory containing a plate made of a ferroelectric material that has

20 of the piezoelectric properties in a polarized state, on one side of which the first excitation electrode is located and parallel to it is the leading

The electrode, and on the other side of the plate the second excitation electrode is positioned, the second excitation electrode, forming the recording signals, contains on the other side a plate made of ferroelectric material against the outgoing electrode, recording electrodes and auxiliary electrodes according to the number of stable information states of the device, and the recording electrodes are sub- JQ They are connected to the corresponding formers of the recording signals, and auxiliary electrodes to the zero potential bus.

The drawing shows the design of the memory.

The proposed memory device contains a plate made of a ferroelectric material having piezoelectric properties in the positive state. On one side of the plate 1, the first excitation electrode 2 is applied and parallel to the output electrode 3. On the other side of the plate 1 against the first excitation electrode 2, the second excitation electrode 2 against the output electrode 3 is deposited 4 recording electrodes and auxiliary electrodes 5 . A shaper 6 of readout signals is connected to the excitation electrodes 2, and an amplifier 7 is connected to the output electrode. Recording electrodes 4 are connected to a shaper of 8 different recording recording signals. Auxiliary electrodes 5 are connected to a common point.

In the general case, for storing information that has the maximum number of levels of 35 N (level M information signals), the device has K records 4 electrodes And the same number of auxiliary electrodes 5.

Information is recorded into the production device as follows.

To write a discrete information signal of the K K level of the 8 write signal formers, a write voltage is applied to the K 4 record electrodes connected to these formers, creating a polarization of the ferroelectric material of the plate 1 located in the zone of the output electrode 3 (connected through a 5 ° cut input circuit of the read amplifier 7 to a common point), equal in magnitude and direction of polarization of the ferroelectric material of the plate 1 in the overlap zone of the auxiliary electrodes 5 and of the electrode electrode 3. From the remaining (K) formers 8 recording signals, the (NK) recording electrode 4 connected to these formers is supplied with a recording voltage that creates a polarization of the Ferroelectric material of the plate 1 located in the zone of overlap of the recording electrodes 4 and the output electrode 3, in magnitude, but the sign of which is opposite to the polarization sign of the ferroelectric material of the plate 1 in the overlap zone of the auxiliary electrodes 5 and the output electrode 3.

When reading information, all recording electrodes 4 are connected to a common point. A read pulse from the generator 6 is applied to the excitation electrodes 3. Due to the reverse piezoelectric effect, a mechanical deformation wave propagates in the material of the ferroelectric plate. When the wave of the output electrode 3 reaches the mechanical wave, the latter, due to the appearance of the direct piezoelectric effect, induces an electric charge, the sources of which are elementary piezoelectric transducers formed in the overlapping zones of the recording electrodes 4 and the auxiliary electrodes 5 with the output electrode 3. Each of elementary piezoelectric transducers, induces a charge, the instantaneous value of which is equal to th. or -su. (the sign of the charge is determined by the direction of polarization of the ferroelectric material of this elementary piezoelectric transducer). If the instantaneous charge induced by an elementary piezoelectric transducer formed in the overlap zone of the output electrode 3 and one of the auxiliary electrodes 5 + C, then the total instantaneous electric charge induced at the output electrode 3 for the considered arbitrary case (reading the recorded discrete level K signal) is proportional to the number of levels To the recorded multi-level signal.

When using the proposed storage device in computing devices, the physical volume and quantity of the equipment used are reduced, the power consumption and long-term storage of information are significantly reduced without the expense of external energy, as well as its combination without destruction.

Claims (2)

1. US Patent N 373359О, cl. 34O-174, 1971. 2. Author's certificate CCXDP № 556497, cl. G 11 C 11/22, 1977 (prototype).