SU669300A1 - Method of measuring breakthrough voltage between transistor emitter and collector at elevated temperature - Google Patents
Method of measuring breakthrough voltage between transistor emitter and collector at elevated temperatureInfo
- Publication number
- SU669300A1 SU669300A1 SU742000104A SU2000104A SU669300A1 SU 669300 A1 SU669300 A1 SU 669300A1 SU 742000104 A SU742000104 A SU 742000104A SU 2000104 A SU2000104 A SU 2000104A SU 669300 A1 SU669300 A1 SU 669300A1
- Authority
- SU
- USSR - Soviet Union
- Prior art keywords
- collector
- elevated temperature
- transistor emitter
- breakthrough voltage
- measuring
- Prior art date
Links
Landscapes
- Investigating Or Analyzing Materials Using Thermal Means (AREA)
- Investigating And Analyzing Materials By Characteristic Methods (AREA)
Description
(То - комнатна температура) с помощью соотношени (That is room temperature) by the ratio
L(BRJ«li/-re,Dt oJteRKEI/T Te,3rEM 3,L (BRJ "li / -re, Dt oJteRKEI / T Te, 3rEM 3,
На чертеже показана электрическа структурна схема устройства дл реализации предлагаемого способа.The drawing shows an electrical block diagram of a device for implementing the proposed method.
Устройство содержит контактную колодку с клеммами 1,2,3 дл подключени выводов коллектора, базы и эмиттера соответственно , генератор 4 импульсов испытательного напр жени , измеритель 5 напр жени пробо , эталонный резистор 6, пороговое устройство 7, усилитель 8, моделирующий блок 9, базовый резистор (Rg) 10.The device contains a terminal block with terminals 1,2,3 for connecting the collector, base and emitter terminals, respectively, a generator of 4 pulses of the test voltage, a meter 5 for the breakdown voltage, a reference resistor 6, a threshold device 7, an amplifier 8, a simulator 9, a basic resistor (Rg) 10.
Моделирующий блок 9 создает ток в базовой цепи. От генератора 4 испытательные импульсы подаютс на коллектор транзистора . При достижении 1с заданной величины срабатывает пороговый элемент 7, выходной сигнал которого усиленный усилителем 8, поступает на управл ющие входы генератора 4 и измерител 5. При этом фиксируетс напр жение пробо и снимаетс испытательное напр жение.Modeling unit 9 creates a current in the base circuit. From generator 4, test pulses are applied to the collector of the transistor. When 1c reaches a predetermined value, threshold element 7 is triggered, the output signal of which is amplified by amplifier 8 is fed to the control inputs of generator 4 and meter 5. At the same time, the breakdown voltage is fixed and the test voltage is removed.
Применение предлагаемого способа позвол ет снизить трудоемкость и затраты электроэнергии , а также повысить производительность измерений Цйл)сЕН Р повыщенной температуре.The application of the proposed method allows to reduce the complexity and cost of electricity, as well as to improve the performance of measurements of Cyll P elevated temperature.
Claims (2)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| SU742000104A SU669300A1 (en) | 1974-02-22 | 1974-02-22 | Method of measuring breakthrough voltage between transistor emitter and collector at elevated temperature |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| SU742000104A SU669300A1 (en) | 1974-02-22 | 1974-02-22 | Method of measuring breakthrough voltage between transistor emitter and collector at elevated temperature |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| SU669300A1 true SU669300A1 (en) | 1979-06-25 |
Family
ID=20577055
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SU742000104A SU669300A1 (en) | 1974-02-22 | 1974-02-22 | Method of measuring breakthrough voltage between transistor emitter and collector at elevated temperature |
Country Status (1)
| Country | Link |
|---|---|
| SU (1) | SU669300A1 (en) |
-
1974
- 1974-02-22 SU SU742000104A patent/SU669300A1/en active
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