SU640216A1 - Method of determining the profile of doping semiconductor materials - Google Patents
Method of determining the profile of doping semiconductor materialsInfo
- Publication number
- SU640216A1 SU640216A1 SU762320242A SU2320242A SU640216A1 SU 640216 A1 SU640216 A1 SU 640216A1 SU 762320242 A SU762320242 A SU 762320242A SU 2320242 A SU2320242 A SU 2320242A SU 640216 A1 SU640216 A1 SU 640216A1
- Authority
- SU
- USSR - Soviet Union
- Prior art keywords
- profile
- determining
- semiconductor materials
- doping semiconductor
- high frequency
- Prior art date
Links
Landscapes
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Description
в omicbUBaeMOM способе достаточ.но велико () и .их фйльтращи в выходном устройстве до требуемой величины не представл ет собой сложности. Изготовление и настройка усилител низкой частоты с большим коэффициентом усилени значительно проще, чем у резонансного усилител высокой частоты.in the omicbUBaeMOM method, it is sufficiently large () and their filter points in the output device to the required value are not difficult. The fabrication and tuning of a low frequency amplifier with a large gain is much simpler than that of a high frequency resonant amplifier.
Ф о р м у л а изобретени F o rmu l invention
Способ определени профил легирован .и полупроводниковых материалов «а р-л-п-ереходах и барье рах Шотт1ки путем подачй на «оследуемый образец напр жени смещени и высокочастотного сигнала, отличающийс тем, что, с целью упрощени .аппаратурной реализации измерений , высокочастотный сигнал -модулиру5 ют низкой частотой и измер ют на-пр жение «а испытуемом образце «а частоте модул ции .The method of determining the profile of doped materials and semiconductor materials and schottles and schottky barriers by applying to the continuous sample a bias voltage and a high frequency signal, characterized in that, in order to simplify the instrumentation of measurements, the high frequency signal is the modulation is low frequency and the voltage is measured at the sample under test at the modulation frequency.
Источники информации, прин тые во 0 внимание при экспертизе:Sources of information taken into consideration during the examination:
1.Патент США №,3518545, кл. 31/26, опублик. 1970.1. US patent number 3518545, cl. 31/26, published. 1970.
2.Авторское свидетельство Alb 240853, кл. G 01 R 31/26, 1969.2. Authors certificate Alb 240853, cl. G 01 R 31/26, 1969.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
SU762320242A SU640216A1 (en) | 1976-02-04 | 1976-02-04 | Method of determining the profile of doping semiconductor materials |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
SU762320242A SU640216A1 (en) | 1976-02-04 | 1976-02-04 | Method of determining the profile of doping semiconductor materials |
Publications (1)
Publication Number | Publication Date |
---|---|
SU640216A1 true SU640216A1 (en) | 1978-12-30 |
Family
ID=20647535
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SU762320242A SU640216A1 (en) | 1976-02-04 | 1976-02-04 | Method of determining the profile of doping semiconductor materials |
Country Status (1)
Country | Link |
---|---|
SU (1) | SU640216A1 (en) |
-
1976
- 1976-02-04 SU SU762320242A patent/SU640216A1/en active
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