SU640216A1 - Method of determining the profile of doping semiconductor materials - Google Patents

Method of determining the profile of doping semiconductor materials

Info

Publication number
SU640216A1
SU640216A1 SU762320242A SU2320242A SU640216A1 SU 640216 A1 SU640216 A1 SU 640216A1 SU 762320242 A SU762320242 A SU 762320242A SU 2320242 A SU2320242 A SU 2320242A SU 640216 A1 SU640216 A1 SU 640216A1
Authority
SU
USSR - Soviet Union
Prior art keywords
profile
determining
semiconductor materials
doping semiconductor
high frequency
Prior art date
Application number
SU762320242A
Other languages
Russian (ru)
Inventor
Валерий Петрович Сушков
Мартин Васильевич Невский
Игорь Дмитриевич Гудков
Original Assignee
Предприятие П/Я Х-5594
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Предприятие П/Я Х-5594 filed Critical Предприятие П/Я Х-5594
Priority to SU762320242A priority Critical patent/SU640216A1/en
Application granted granted Critical
Publication of SU640216A1 publication Critical patent/SU640216A1/en

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  • Testing Or Measuring Of Semiconductors Or The Like (AREA)

Description

в omicbUBaeMOM способе достаточ.но велико () и .их фйльтращи  в выходном устройстве до требуемой величины не представл ет собой сложности. Изготовление и настройка усилител  низкой частоты с большим коэффициентом усилени  значительно проще, чем у резонансного усилител  высокой частоты.in the omicbUBaeMOM method, it is sufficiently large () and their filter points in the output device to the required value are not difficult. The fabrication and tuning of a low frequency amplifier with a large gain is much simpler than that of a high frequency resonant amplifier.

Ф о р м у л а изобретени F o rmu l invention

Способ определени  профил  легирован .и  полупроводниковых материалов «а р-л-п-ереходах и барье рах Шотт1ки путем подачй на «оследуемый образец напр жени  смещени  и высокочастотного сигнала, отличающийс  тем, что, с целью упрощени  .аппаратурной реализации измерений , высокочастотный сигнал -модулиру5 ют низкой частотой и измер ют на-пр жение «а испытуемом образце «а частоте модул ции .The method of determining the profile of doped materials and semiconductor materials and schottles and schottky barriers by applying to the continuous sample a bias voltage and a high frequency signal, characterized in that, in order to simplify the instrumentation of measurements, the high frequency signal is the modulation is low frequency and the voltage is measured at the sample under test at the modulation frequency.

Источники информации, прин тые во 0 внимание при экспертизе:Sources of information taken into consideration during the examination:

1.Патент США №,3518545, кл. 31/26, опублик. 1970.1. US patent number 3518545, cl. 31/26, published. 1970.

2.Авторское свидетельство Alb 240853, кл. G 01 R 31/26, 1969.2. Authors certificate Alb 240853, cl. G 01 R 31/26, 1969.

SU762320242A 1976-02-04 1976-02-04 Method of determining the profile of doping semiconductor materials SU640216A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
SU762320242A SU640216A1 (en) 1976-02-04 1976-02-04 Method of determining the profile of doping semiconductor materials

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
SU762320242A SU640216A1 (en) 1976-02-04 1976-02-04 Method of determining the profile of doping semiconductor materials

Publications (1)

Publication Number Publication Date
SU640216A1 true SU640216A1 (en) 1978-12-30

Family

ID=20647535

Family Applications (1)

Application Number Title Priority Date Filing Date
SU762320242A SU640216A1 (en) 1976-02-04 1976-02-04 Method of determining the profile of doping semiconductor materials

Country Status (1)

Country Link
SU (1) SU640216A1 (en)

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