SU605822A2 - Solution for chemical etching of metals - Google Patents
Solution for chemical etching of metalsInfo
- Publication number
- SU605822A2 SU605822A2 SU762413321A SU2413321A SU605822A2 SU 605822 A2 SU605822 A2 SU 605822A2 SU 762413321 A SU762413321 A SU 762413321A SU 2413321 A SU2413321 A SU 2413321A SU 605822 A2 SU605822 A2 SU 605822A2
- Authority
- SU
- USSR - Soviet Union
- Prior art keywords
- solution
- etching
- metals
- chemical etching
- rate
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/10—Etching compositions
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- ing And Chemical Polishing (AREA)
Description
Изобретение относитс к химической обработке поверхности металлов, в «шстности к растворам д химического травлени меди и ее сплавов и может найти применение при производстве петатных схем в радиоэлектронной и приборостроительной g промышленности.The invention relates to the chemical treatment of the surface of metals, to solutions for chemical etching of copper and its alloys, and can be used in the manufacture of petate circuits in the radio electronic and instrument-making industry.
По основному авт. св. № 522282 известен раствор дл химического 1равле1ш металлов, содержащий 28-36 вес.% хлорного железа и 64-72 вес.% ацетонит{ 1ла Ц.ЮAccording to the main author. St. No. 522282 is a known solution for chemical 1ravle metal, containing 28–36 wt.% Ferric chloride and 64–72 wt.% Acetonite {1la C.U.
Скорость травлени меди при использовании этого раствора 9,2-10,8 мг/см - мин.The rate of copper etching when using this solution is 9.2-10.8 mg / cm - min.
С целью повышени эффективности травлени за счет увелитени скорости травлени предлагаемый раствор содержит производное аналина в количестве|5 1-2 вес.%.In order to increase the etching efficiency by increasing the etching rate, the proposed solution contains an analyte derivative in an amount of 5–5 wt.%.
В качестве производного анилина может быть использован пара-метоксианилин.Para-methoxyaniline can be used as an aniline derivative.
Введение этой добавки обеспечивает большую эффективность травлени металлов, в частности ско- 20 рость травлени меди повышаетс с 9,2-10,8 до 16-18 мг/см.мин.The introduction of this additive provides greater efficiency in the etching of metals, in particular, the rate of etching of copper increases from 9.2-10.8 to 16-18 mg / cm / min.
Дл приготовлени раствора навеску хлорного железа раствор ют при нормальных услови х в ацетонитриле и к раствору прибавл ют пара-метокси- 25To prepare the solution, the ferric chloride was dissolved under normal conditions in acetonitrile and para-methoxy-25 was added to the solution.
анилин. Процесс травлени осуществл ют при 8-10 и перемешивании раствора.aniline. The etching process is carried out with 8-10 and stirring the solution.
Пример. Образцы из меди марки М-1 погружают в раствор состава (в вес.%): хлорное железо 28, ацетонитрил 70, пара-метокснанилин 2. Процесс ведут при 10°С и перемещивании раствора. При введении пара-метоксианилина скорость травлени повьшветс с 9,2 до 18 мг/см мин.Example. Samples of copper grade M-1 immersed in a solution of the composition (in wt.%): Ferric chloride 28, acetonitrile 70, para-methoxnaniline 2. The process is carried out at 10 ° C and moving the solution. With the introduction of para-methoxyaniline, the etching rate is higher from 9.2 to 18 mg / cm min.
П р и м е р 2. Опыт провод т по примеру 1, но используют раствор состава (в вес.%): хлорное железо 28, ацетонитрил 71, пара-метоксиани;шн 1.PRI mme R 2. The experiment was carried out as in Example 1, but using a solution of the composition (% by weight): ferric chloride 28, acetonitrile 71, para-methoxyane;
Скорость травлени увеличиваетс с 9,2 до 16 мг/см /мин.The etching rate increases from 9.2 to 16 mg / cm / min.
При введении органической добавкн ч количестве меньще 1 вес.% скорость травлени снижаетс , а больще 2 вес.% повышаетс незначительно.With the introduction of an organic additive quantity less than 1 wt.%, The etching rate decreases, and more than 2 wt.% Increases slightly.
Предлагаемый раствор обеспечивает повышение скорости травлени и, следовательно, экономические преимущества по сравнению с известными растворами .The proposed solution provides an increase in the rate of etching and, consequently, economic advantages compared with the known solutions.
Claims (2)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
SU762413321A SU605822A2 (en) | 1976-10-18 | 1976-10-18 | Solution for chemical etching of metals |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
SU762413321A SU605822A2 (en) | 1976-10-18 | 1976-10-18 | Solution for chemical etching of metals |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SU522282 Addition |
Publications (1)
Publication Number | Publication Date |
---|---|
SU605822A2 true SU605822A2 (en) | 1978-04-05 |
Family
ID=20680325
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SU762413321A SU605822A2 (en) | 1976-10-18 | 1976-10-18 | Solution for chemical etching of metals |
Country Status (1)
Country | Link |
---|---|
SU (1) | SU605822A2 (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2575189A1 (en) * | 1982-12-17 | 1986-06-27 | Psi Star Inc | Process for etching copper on a substrate |
RU2444580C1 (en) * | 2010-10-15 | 2012-03-10 | Федеральное государственное бюджетное образовательное учреждение высшего профессионального образования "Ульяновский государственный технический университет" | Copper etching composition |
-
1976
- 1976-10-18 SU SU762413321A patent/SU605822A2/en active
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2575189A1 (en) * | 1982-12-17 | 1986-06-27 | Psi Star Inc | Process for etching copper on a substrate |
RU2444580C1 (en) * | 2010-10-15 | 2012-03-10 | Федеральное государственное бюджетное образовательное учреждение высшего профессионального образования "Ульяновский государственный технический университет" | Copper etching composition |
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