SU536493A1 - Integrating converter - Google Patents

Description

one

The invention relates to a perceptual technique and can be used as an integrator in analog computers.

Integrating converters are known that contain a unipolar voltage source, the output of which is connected to a key input with a paraphase output, an integrating cascade performed on an ionotronic field-effect transistor, the control electrode of which is connected to the first output of the key through the input resistor, and the variable gate is connected to second exit key.

However, the known integrating converters have a small signal conversion range.

The proposed integrating converter differs from the known ones in that additional integrated circuits are introduced into it, each of which is performed on an ionotronic field effect transistor, the control electrode and the source of the transistor of each odd additional integrating stage are connected to

the first output of the key, the variable gate is connected to the source of the ionotronic field-effect transistor of the previous integrating stage, the variable gate and the drain of this transistor is connected to the second output of the key, between the drain and the source of the ionotron field-effect transistor of each stage, except the last one, the blocking diode is turned on, and the drain of the ionotron field-effect transistor the last stage is connected to the control input of the key and through the limiting resistor to the second output of the key.

This made it possible to expand the range of signal conversion.

The drawing shows a functional diagram of the integrating converter.

Claims (2)

The device contains a source of unipolar voltage 1, a key 2 with a paraffin output, an input resistor 3, an integrating stage at the ionotronic field-effect transistor 4, additional integrating stages at the ionotron field-effect transistors 5, 6 and 7, blocking diodes 8, 9 and 10, limiting resistor 1 The device operates as follows. In the initial state, all ionotronic field effect transistors are locked. If the first output of the key 2 with a paraphase output has a positive potential, then through the input resistor 3 this potential will be applied to the control of an emptying electrode of the integrating cascade on the ionotronic field-effect transistor 4. The second output of the key 2 at this time will be the negative potential that is applied to the variable gate and source of the integrating cascade at the ionotronic field-effect transistor 4. Such polarity at the field-effect transistor provides for the transfer of metal ions from the control electrode to the variable gate rationally integral of the input control signal. After some time, after the channel is enriched with charge carriers, the field-effect transistor 4 opens. The current flows between the source and drain of the ionotron field-effect transistor 4 and the signal is integrated by the second stage on the additional ionotron field-effect transistor 5. All processes for each of the subsequent integrating stage are the same as those described for the first stage on the ionotron field-effect transistor 4 it can also open a positive potential at the output of the converter according to the Vits only when through a multi-stage integrating converter will pass the amount of electricity determined by the full range of integration of the converter. Resistors 3 and 13 are needed to limit the current in the case of an open state monotronic field effect transistor. The output signal from the last field-effect transistor is fed to the switching input of switch 2, changing the polarity at its output, i.e., to the output of the integrating converter. Changing the polarity at the input of the integrating converter with full use of the integrated range of the converter is necessary to bring the ion field current transistors back to their original state. In case of negative polarity at the first output of the key 2 and positive at the second output, the metal ions will disappear: a variable shutter to control the ionotron sensor. The removal of gates occurs simultaneously in all ion-sensitive field-effect transistors. Negative potential is directly applied to the variable gate and positive to the control electrode will be only for the ionotronic field-effect transistor 4. For subsequent ionotrons, these potentials are supplied through diodes 8, 9 and 10. For the ionotron field-effect transistor 5 in the recovery mode, the current flows from the second output of the key 2 through the diode 8, a variable gate of the nonotron of the ionotronic field-effect transistor 5, its control electrode to the first output of the key 2. This ensures the transfer of metal from the variable gate to the control electrode of the ionotronic field-effect transistor. 5. All subsequent ionotron field-effect transistors work in a similar way. After restoring the original state, the integration cycle begins again. In the integration mode, the diodes are in the locked state, and in the recovery mode, in the conducting state. The number of integrating stages depends on how many times it is necessary to increase the integration range of one stage of the converter. The output signal can be removed from one or another output of the converter, which corresponds to a certain discrete level of the full range of the amplifier and the integration zone of the converter. The invention includes an integrating converter containing a source of unipolar voltage, the output of which is connected to a key input with a paraphase output, an integrating cascade made on an ionotronic field-effect transistor, the control electrode of which is connected to the first output of the key through the input resistor, and the variable gate is connected to the second key output, characterized in that, in order to expand the signal conversion range, additional integration cascades are introduced into it, each of which is performed by an ion Throne tranzistorre field, the gate electrode and the source of each odd tranziotora additional integrator stage is connected to the first output of the switch, the variable gate connected to the source of FET ionotronnogo integrating previous stage, an alternating gate and drain of this transistor are connected to the output the key, between the drain and source of the ionotron field-effect transistor of each cascade, except the last one, the locking diode is turned on, and the drain of the ionotron field-effect field the transistor of the last stage is connected to the control input of the switch and through the limiting resistor to the second output of the switch. 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