SU500714A1 - Method of obtaining gallium arsenide layers - Google Patents

Description

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The invention is from Osita to semiconductor chromium and can be used to obtain particularly clean Go. As with high electrophysical parameters,

There is a known method of obtaining pure G-aAs layers 1. by epitaxial growth in the AsCtj & D-Nd system. The purity of the purses here is achieved by using highly pure and well-taken multiple fractional persgon distillation of the little mouse, which clears AsCtj from volatile metal chlorides,

However, in the known method, although the components purified from metal chlorides are used, the latter are again formed directly in the quartz reactor, and especially silica chlorides ({I from the material of the quartz reactor, which in the GciAS deposition process alloy the growing layer with silicon impurity. Replacing the quartz crystal A reactor to a reactor of another material is practically impossible due to the lack of a high degree of flow of materials suitable for creating high-temperature reactors.

The circuit of the invention is the development of a method for reducing the level of uncontrolled doping of the outer layers of GaAb with silicon.

This is achieved by the fact that in the growth zone of the epitaxial layers & a. And & at growth temperature, hydrazine vapor (or ammonia) is supplied.

Hydrazine (or ammonia), when interacting with silicon chlorides, form complexes of the type SCx N (for example, Si.), Which, when embedded in the grid of the go-ram layer, are as an option. electrically inactive.

The essence of the proposed method is closed as follows.

Silicon chlorides formed in the growth zone are bound by hydrazine or ammonia to form silicon nitride, which reduces the concentration of electrically active silicon in the growing G-aAs layer.

Example. The device is designed as a system for spreading epitaxial layers & az of an open chloride process from AsCf.j, & a, H2 .. An additional input was made, through which pairs of highly pure hydrazine are fed to the growth zone by a stream of Nashe, or ammonia, In the system, with the initial components allowing to obtain layers with a TV concentration of electrons of 2-10 cm and mobility. electrons of 3,600O; with and 4OOOO and, when highly pure hydrazine was introduced into the growth zone of vapor, gallium arsenide layers with an electron concentration of 10 cm and electron mobility were obtained

  at ZOO ° K and: 1OOOOO at.

Claims of Invention The method of producing gallium arsenide layers by epitaxial growth, in order to reduce the level of uncontrolled doping of gallium arsenide layers with silicon, in the growth zone of epitaxial layers at growth temperature, vapors of a substance bonding silicon, for example nitrogen-containing compounds (hydrazine or ammonia).